SMC4636NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 60V, ID = 13A APPLICATIONS PART NUMBER INFORMATION
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1 MC3NA ingle N-Channel MOFET DECRIPTION MC3 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior,fast switching performance, and withstand high energy pulse in the avalanche and commutation mode. PART NUMBER INFORMATION MC 3 NA - TR G a b c d e a : Company name. b : Product erial number. c : Package code NA:DFN3.3X3.3A- d : Handling code TR:Tape&Reel e : Green produce code G:RoH Compliant FEATURE VD = V, ID = 3A RD(ON)=3mΩ(Typ.)@VG= V RD(ON)=3mΩ(Typ.)@VG=.5V % UI and Rg tested APPLICATION Power Management Motor Dirve LED Application Pin D D D D G DFN3.3X3.3A- G D ABOLUTE MAXIMUM RATING (TA = 5 C Unless otherwise noted ) ymbol Parameter Rating Units VD Drain-ource Voltage V VG Gate-ource Voltage ± V TC=5 C 3 A ID Pulsed Drain Current TC= C. A IDM Pulsed Drain Current A 5 A ID PD Continuous Drain Current Power Dissipation B TA=5 C. A TA=7 C 5. A TA=5 C 3. W TA=7 C W IA Avalanche Current A A EA ingle Pulse Avalanche energy L=.mH AF mj PD Power Dissipation C TC=5 C. W TC= C.5 W TJ Operation Junction Temperature -55/5 C TTG torage Temperature Range -55/5 C THERMAL REITANCE ymbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t s Thermal Resistance Junction to Ambient BD 7 C/W teady-tate RθJC Thermal Resistance Junction to Case MC3NA Rev.A
2 ELECTRICAL CHARACTERITIC(TA = 5 C Unless otherwise noted ) MC3NA ymbol Parameter Condition Min Typ Max Unit tatic Parameters BVD Drain-ource Breakdown Voltage VG=V, ID=5μA V VG(th) Gate Threshold Voltage VD=VG, ID=5μA.5.5 V IG Gate Leakage Current VD=V, VG=±V ± na ID Zero Gate Voltage Drain Current VD=V, VG=V, TJ=5 C VD=V, VG=V, TJ=75 C μa Drain-source On-Resistance E VG=V, ID=.A 3 VG=.5V, ID=5A 3 mω Gfs Forward Transconductance VD=V, ID=.A 7 RD(ON) Diode Characteristics VD Diode Forward Voltage E I=A,VG=V.7 V I Continuous ource Current 3 A Dynamic and witching Parameters Qg Total Gate Charge (V) 9 Qg Total Gate Charge (.5V). 9. VD=3V, VG=V, ID=.A Qgs Gate-ource Charge. 3.5 Qgd Gate-Drain Charge. 3. Ciss Input Capacitance 5 Coss Output Capacitance VD=3V, VG=V, f=mhz Crss Reverse Transfer Capacitance 5 Rg Gate Resistance VG=V, VD=V, F=MHZ. Ω td(on). 9 Turn-On Time E tr VDD=3V, VG=V, RG=3Ω, 3 td(off) ID=A 3 Turn-Off Time E Tf. Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)=5 C. B. The value of RθJA is measured with the device mounted on in FR- board in a still air environment with maximum junction temperature TJ(MAX)=5 C (initial temperature TA=5 C). C. TJ(MAX)=5 C,using junction-to-ambient thermal resistance, t sec. D. TJ(MAX)=5 C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. E. The data tested by pulsed, pulse width 3µ, duty cycle %. F. The EA data shows Max, tested and pulse width limited by TJ(MAX)=5 C (initial temperature TJ=5 C). The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. nc pf n MC3NA Rev.A
3 Normalized Threshold Voltage Ptot-Power(W) VG(V) Capacitance(pF) RD(ON)(mΩ) MC3NA TYPICAL CHARACTERITIC VG=V VG=.5V VG=5V VG=V 55 TA=5 C 5 5 VG=3.5V 35 VG=.5V 3 VG=V VG=3V 5 VG=.5V 3 5 VD-Drain ource Voltage(V) Output Characteristics Drain-ource On Resistance VD=3V ID=.A 7 Ciss 3 Coss Crss 3 5 Qg-Gate Charge(nC) Gate Charge VD-Drain ource Voltage(V) Capacitance.3. TC=5 C Gate Threshold Voltage Power Dissipation MC3NA Rev.A 3
4 Normalized Transient Thermal Resistance Normalized On Resistance MC3NA TYPICAL CHARACTERITIC. 5.7 Tc=5 C VG=V RD(ON) vs Junction Temperature TC-Case Temperature( C) Drain Current vs TC TC=5 C ID (A). µs µs ms. Duty= ms DC. t ms ingle Pulse... VD Voltage (V) Maximum afe Operation Area t Duty Cycle, D=t/t..... quare Wave Pulse Duration(ec) Thermal Transient Impedance VG Ton Toff V Qg VD Td(on) Tr Td(off) Tf Qgs Qgd 9% % Charge VG Gate Chrge Waveform witching Time Waveform MC3NA Rev.A
5 MC3NA DFN3.3X3.3A- PACKAGE DIMENION ymbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A b c..5.. D D D D E E E e.5bc..bc. H L L M Ɵ 5 Recommended Land Pattern MC3NA Rev.A 5
Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 23 A TA=70 C 18.5 A
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More informationALL Switch GaN Power Switch - DAS V22N65A
Description ALL-Switch is a System In Package (SIP) switch. A Normally-Off safe function is integrated within the package, designed according to SmartGaN topology, an innovation by VisIC Technologies.
More informationTPH3205WSB. 650V Cascode GaN FET in TO-247 (source tab)
650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationMOSFET SI4558DY (KI4558DY)
Features SOP- N-Channel:VDS=3V ID=A RDS(ON) < 4mΩ (VGS = V) RDS(ON) < mω (VGS = 4.5V) P-Channel:VDS=-3V ID=-A.5.5 RDS(ON) < 4mΩ (VGS =-V) RDS(ON) < 7mΩ (VGS =-4.5V). +.4 -. Source Gate 3 Source 4 Gate
More informationCYStech Electronics Corp.
N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH BVDSS 2V -2V Features Simple drive requirement Low gate charge Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Spec.
More informationSSF8205A. GENERAL FEATURES VDS =20V,ID =6A RDS(ON) < Application Battery protection Load switch Power management
DESCRIPTION The SSF8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection
More informationSSP20N60S / SSF20N60S 600V N-Channel MOSFET
SSP20N60S / SSF20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
More informationTPIC3322L 3-CHANNEL COMMON-DRAIN LOGIC-LEVEL POWER DMOS ARRAY
Low r DS(on)....6 Ω Typ High-Voltage Outputs...6 V Pulsed Current...5 A Per Channel Fast Commutation Speed Direct Logic-Level Interface description SOURCE GATE SOURCE SOURCE3 D PACKAGE (TOP VIEW) 3 4 8
More informationP-Channel Enhancement Mode MOSFET
Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of
More informationTC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@ = 10 V This advanced technology has been especially
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N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES is available in a SOT-23 package. 20V/6A, RDS(ON)=26mΩ(Max.) @VGS=4.5V RDS(ON)=37mΩ(Max.) @VGS=2.5V ESD Protected Super High Dense Cell Design Reliable and
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DESCRIPTION The SPN166T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially
More informationSMD Type. N-Channel MOSFET SI2318CDS-HF (KI2318CDS-HF) Features. Absolute Maximum Ratings Ta = 25
N-Channel SI8CDS-HF (KI8CDS-HF) Features VDS (V) = V ID =.6 A (VGS = V) RDS(ON) < mω (VGS = V) RDS(ON) < mω (VGS =.V) Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish D.8 -.
More informationSPN80T06. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool
DESCRIPTION The SPN80T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially
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DESCRIPTION The SPN166T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially
More informationAM2300. AiT Semiconductor Inc. APPLICATION ORDER INFORMATION PIN CONFIGURATION
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). FEATURES 20V/4.0A, RDS(ON)
More informationDual P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationG : GATE S : SOURCE D : DRAIN. Symbol VDS VGS. Avalanche Current EAS EAR TSTG
M25N3Q-HF N-hannel RoH evice Halogen Free Features - ingle rive Requirement..2(5.).5(4.7).(.25).7(.7) - Low On-resistance. - Fast witching haracteristic. - ynamic dv/dt rating..57(4.).5(3.).244(6.2).22(5.)
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More information800V/4A N-Channel MOSFET MSK4N80T/F 800V/4A. N-Channel MOSFET. General Description. Features. Pin Configuration TO-220 TO-220F
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More informationAO V P-Channel MOSFET
3V PChannel MOFET General escription The AO4413 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use as a load
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STF140N6F7 140N6F7 TO-220FP Tube
N-channel 60 V, 0.0031 Ω typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF140N6F7 60 V 0.0035 Ω 70 A 33 W Among the
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DESCRIPTION The SPN6242 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationPFU70R360G / PFD70R360G
FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power
More informationn Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International
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