MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package
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- Iris Dorsey
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1 MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. Features Guardring for Stress Protection Low Forward Voltage 175 C Operating Junction Temperature Epoxy Meets UL 9 in Short Heat Sink Tab Manufactured Not Sheared! EC Q1 Qualified and PPP Capable SBRB and SBRD8 Prefixes for utomotive and Other pplications Requiring Unique Site and Control Change Requirements ll Packages are Pb Free* Mechanical Characteristics: Case: Epoxy, Molded, Epoxy Meets UL 9 V Weight: 1.7 grams for D 2 PK (approximately). grams for DPK (approximately) Finish: ll External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 26 C Max. for Seconds Device Meets MSL1 Requirements ESD Ratings: Machine Model = C (> V) Human Body Model = B (> 8 V) 1 SCHOTTKY BRRIER RECTIFIER MPERES, 5 VOLTS 1 D 2 PK CSE 18B Y WW MBRB5 G K 1 2 DPK CSE 69C Y WW B5 G MRKING DIGRM Y WW MBRB5G K = ssembly Location = Year = Work Week = Device Code = Pb Free Package = Diode Polarity MRKING DIGRM YWW B 5G = Year = Work Week = Device Code = Pb Free Package ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 212 January, 212 Rev. 8 1 Publication Order Number: MBRB5/D
2 MBRB5G, MBRD5G, SBRB5G, SBRD85TG MXIMUM RTINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V RRM 5 V Working Peak Reverse Voltage DC Blocking Voltage V RWM V R verage Rectified Forward Current (Rated V R ) T C = 15 C I F(V) I Peak Repetitive Forward Current (Rated V R, Square Wave, 2 khz) T C = 15 C FRM 2 Nonrepetitive Peak Surge Current I FSM 15 (Surge applied at rated load conditions halfwave, single phase, 6 Hz) (MBRB/SBRB) 7 (MBRD/SBRD) Operating Junction and Storage Temperature Range (Note 1) T J, T stg 65 to +175 C Voltage Rate of Change (Rated V R ) dv/dt V/ s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction to mbient: dp D /dt J < 1/R J. THERML CHRCTERISTICS Characteristic Symbol Value Unit Thermal Resistance, (MBRB5G) Junction to Case (Note 2) Junction to mbient (Note 2) (MBRD5G) Junction to Case (Note 2) Junction to mbient (Note 2) R JC R J R JC R J C/W 2. When mounted using minimum recommended pad size on FR board. ELECTRICL CHRCTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note ) (I F = mps, T J = 1) (I F = 2 mps, T J = 1) (I F = 2 mps, T J = ) Maximum Instantaneous Reverse Current (Note ) (Rated dc Voltage, T J = 1) (Rated dc Voltage, T J = ). Pulse Test: Pulse Width = s, Duty Cycle 2.% ORDERING INFORMTION V F I R 15.1 V m Device Package Shipping MBRB5G SBRB5G MBRB5TG SBRB5TG MBRD5G MBRD5TG SBRD85TG D 2 PK D 2 PK D 2 PK D 2 PK DPK DPK DPK 5 Units / Rail 5 Units / Rail 8 Units / Tape & Reel 8 Units / Tape & Reel 5 Units / Rail 2,5 Units / Tape & Reel 2,5 Units / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 2
3 MBRB5G, MBRD5G, SBRB5G, SBRD85TG 7 5 T J = 15 C C 7 5 C T J = 15 C 2 2 i F, INSTNTNEOUS FORWRD CURRENT (MPS) i F, INSTNTNEOUS FORWRD CURRENT (MPS) v F, INSTNTNEOUS VOLTGE (VOLTS) v F, INSTNTNEOUS VOLTGE (VOLTS) Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage I R, REVERSE CURRENT (m).1.1 T J = 15 C 1 C 75 C I R, REVERSE CURRENT (m) C 1 C 75 C V R, REVERSE VOLTGE (VOLTS) V R, REVERSE VOLTGE (VOLTS) Figure. Maximum Reverse Current Figure. Typical Reverse Current
4 MBRB5G, MBRD5G, SBRB5G, SBRD85TG 2 1 I FSM, PEK HLF-WVE CURRENT (MPS) C, CPCITNCE (pf) NUMBER OF CYCLES T 6 Hz V R, REVERSE VOLTGE (VOLTS) Figure 8. Maximum Surge Capability Figure 5. Typical Capacitance I F(V), VERGE FORWRD CURRENT (MPS) SQURE WVE dc RTED VOLTGE PPLIED P F(V), VERGE FORWRD POWER DISSIPTION (WTTS) SQURE WVE T C, CSE TEMPERTURE ( C) I F(V), VERGE FORWRD CURRENT (MPS) dc Figure 6. Current Derating, Case, R JC = C/W Figure 7. Forward Power Dissipation
5 MBRB5G, MBRD5G, SBRB5G, SBRD85TG PCKGE DIMENSIONS D 2 PK CSE 18B ISSUE K T SETING PLNE B 1 2 G S D PL.1 (.5) M T B M K C H E V W W J NOTES: 1. DIMENSIONING ND TOLERNCING PER NSI Y1.5M, CONTROLLING DIMENSION: INCH.. 18B 1 THRU 18B OBSOLETE, NEW STNDRD 18B. INCHES MILLIMETERS DIM MIN MX MIN MX B C D E F G. BSC 2.5 BSC H J K L M N.197 REF 5. REF P.79 REF 2. REF R.9 REF.99 REF S V SOLDERING FOOTPRINT* X.5 2X PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 5
6 MBRB5G, MBRD5G, SBRB5G, SBRD85TG PCKGE DIMENSIONS DPK (SINGLE GUGE) CSE 69C 1 ISSUE D L L b2 e E b 1 2 b D B DETIL c.5 (.1) M C C c2 H L2 GUGE PLNE L L1 DETIL ROTTED 9 CW 1 H C Z SETING PLNE NOTES: 1. DIMENSIONING ND TOLERNCING PER SME Y1.5M, CONTROLLING DIMENSION: INCHES.. THERML PD CONTOUR OPTIONL WITHIN DI- MENSIONS b, L and Z.. DIMENSIONS D ND E DO NOT INCLUDE MOLD FLSH, PROTRUSIONS, OR BURRS. MOLD FLSH, PROTRUSIONS, OR GTE BURRS SHLL NOT EXCEED.6 INCHES PER SIDE. 5. DIMENSIONS D ND E RE DETERMINED T THE OUTERMOST EXTREMES OF THE PLSTIC BODY. 6. DTUMS ND B RE DETERMINED T DTUM PLNE H. INCHES MILLIMETERS DIM MIN MX MIN MX b b b c c D E e.9 BSC 2.29 BSC H L L1.8 REF 2.7 REF L2.2 BSC.51 BSC L L. 1 Z SOLDERING FOOTPRINT* SCLE :1 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 516, Denver, Colorado 8217 US Phone: or 8 86 Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MBRB5/D
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MBR12LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
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MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.
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MBR12VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
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BRB6CT, BR6CT, NRVBB6CTT Switch mode Power Rectifiers TO 2/D 2 PK Surface ount Power Package These state-of-the-art devices employ the use of the Schottky Barrier principle with a platinum barrier metal.
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MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Digital Transistors (BRT) R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
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Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
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SWITCHMODE Power Rectifier 1 V, 6 A Features and Benefits Low Forward Voltage:.72 V @ 125 C Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature 6 A Total (3 A Per Diode
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MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features
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MBRS24LT3 Surface Mount Schottky Power Rectifier Power Surface Mount Package... employing the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide
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MBR2HCTG, MBRB2HCTG, MBR2HCTG, NRVBB2HCTTG SWITCHMODE Power Rectifier V, 2 eatures and Benefits ow orward Voltage:.6 V @ 25 C ow Power oss/high Efficiency High Surge Capacity 75 C Operating Junction Temperature
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BR5, BR5, BRB5 BR5 is a Preferred Device SWITCHODE Power Rectifiers, 5 and 5 These state of the art devices use the Schottky Barrier principle with a platinum barrier metal. eatures uard ring for Stress
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NTD Power MOSFET 68, V, NChannel DPK/IPK Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery valanche Energy Specified I
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MUR8E, MUR88E MUR8E is a Preferred Device SWITCHMODE Power Rectifiers Ultrafast E Series with High Reverse Energy Capability The MUR8 and MUR88E diodes are designed for use in switching power supplies,
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MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
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MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
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Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
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