MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G. SWITCHMODE Power Rectifier 100 V, 20 A SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS
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1 MBR2HCTG, MBRB2HCTG, MBR2HCTG, NRVBB2HCTTG SWITCHMODE Power Rectifier V, 2 eatures and Benefits ow orward Voltage:.6 25 C ow Power oss/high Efficiency High Surge Capacity 75 C Operating Junction Temperature 2 Total ( Per Diode eg) Guard Ring for Stress Protection NRVBB Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable These are Pb ree Devices* pplications Power Supply Output Rectification Power Management Instrumentation Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets U 9 25 in Weight (pproximately):.9 Grams (TO 22).7 Grams (D 2 PK) inish: ll External Surfaces Corrosion Resistant and Terminal eads are Readily Solderable ead Temperature for Soldering Purposes: 26 C Max. for Seconds 2 TO 22B CSE 22 STYE 6 SCHOTTKY BRRIER RECTIIER 2 MPERES, VOTS 2 D 2 PK CSE 8B STYE 2, 2 ISOTED TO 22 CSE 22D STYE DEVICE MRKING INORMTION See general marking information in the device marking section on page 2 of this data sheet. ORDERING INORMTION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. Semiconductor Components Industries, C, 22 October, 22 Rev. Publication Order Number: MBR2HCT/D
2 MBR2HCTG, MBRB2HCTG, MBR2HCTG, NRVBB2HCTTG YWW B2HG K YWW B2HG K YWW B2HG K TO 22B ISOTED TO 22 = ssembly ocation Y = Year WW = Work Week B2H = Device Code G = Pb ree Device K = Polarity Designator D 2 PK igure. Marking Diagrams MXIMUM RTINGS (Per Diode eg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R V verage Rectified orward Current (Rated V R ) T C = 62 C Peak Repetitive orward Current (Rated V R, Square Wave, 2 khz) T C = 6 C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 6 Hz) I (V) I RM 2 I SM 25 Operating Junction Temperature (Note ) T J +75 C Storage Temperature T stg 65 to +75 C Voltage Rate of Change (Rated V R ) dv/dt, V/ s Controlled valanche Energy (see test conditions in igures and 2) W V 2 mj ESD Ratings: Machine Model = C Human Body Model = B > > 8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. unctional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. The heat generated must be less than the thermal conductivity from Junction to mbient: dp D /dt J < /R J. V THERM CHRCTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance (MBR2HCTG, MBRB2HCTG and NRVBB2HCTTG) Junction to Case Junction to mbient (MBR2HCTG) Junction to Case R JC R J R JC C/W 2
3 MBR2HCTG, MBRB2HCTG, MBR2HCTG, NRVBB2HCTTG EECTRIC CHRCTERISTICS (Per Diode eg) Characteristic Symbol Value Unit Maximum Instantaneous orward Voltage (Note 2) (I =, T C = 25 C) (I =, T C = 25 C) (I = 2, T C = 25 C) (I = 2, T C = 25 C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, T C = 25 C) (Rated DC Voltage, T C = 25 C) 2. Pulse Test: Pulse Width = s, Duty Cycle 2.%. v i R 6..5 V m ORDERING INORMTION MBR2HCTG Device Order Number Package Shipping TO 22 (Pb ree) 5 Units / Rail MBR2HCTG MBRB2HCTTG TO 22P (Pb ree) D 2 PK (Pb ree) 5 Units / Rail 8 / Tape & Reel NRVBB2HCTTG* D 2 PK (Pb ree) 8 / Tape & Reel or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. *NRVBB Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable.
4 MBR2HCTG, MBRB2HCTG, MBR2HCTG, NRVBB2HCTTG I, INSTNTNEOUS ORWRD CURRENT (MPS) T J = 5 C T J = 25 C T J = 25 C V, INSTNTNEOUS ORWRD VOTGE (VOTS) I, INSTNTNEOUS ORWRD CURRENT (MPS) T J = 5 C T J = 25 C T J = 25 C V, INSTNTNEOUS ORWRD VOTGE (VOTS) igure. Typical orward Voltage igure 2. Maximum orward Voltage I R, REVERSE CURRENT (MPS).E.E 2.E.E.E 5.E 6.E 7.E 8 2 T J = 5 C T J = 25 C T J = 25 C V R, REVERSE VOTGE (VOTS) I R, MXIMUM REVERSE CURRENT (MPS).E.E 2.E.E.E 5.E 6.E 7.E T J = 5 C T J = 25 C T J = 25 C V R, REVERSE VOTGE (VOTS) igure. Typical Reverse Current igure. Maximum Reverse Current I, VERGE ORWRD CURRENT (MPS) dc SQURE WVE P O, VERGE POWER DISSIPTION (WTTS) SQURE 5 5 DC 2 25 T C, CSE TEMPERTURE ( C) I O, VERGE ORWRD CURRENT (MPS) igure 5. Current Derating igure 6. orward Power Dissipation
5 MBR2HCTG, MBRB2HCTG, MBR2HCTG, NRVBB2HCTTG T J = 25 C C, CPCITNCE (p) V R, REVERSE VOTGE (VOTS) igure 7. Capacitance R(t), TRNSIENT THERM RESISTNCE.. D = SINGE PUSE.... t, TIME (sec) igure 8. Thermal Response Junction to mbient for MBR2HCT, MBRB2HCT and NRVBB2HCTTG P (pk) t t 2 DUTY CYCE, D = t /t 2 R(t), TRNSIENT THERM RESISTNCE D = SINGE PUSE t, TIME (sec) igure 9. Thermal Response Junction to Case for MBR2HCT, MBRB2HCT and NRVBB2HCTTG P (pk) t t 2 DUTY CYCE, D = t /t 2 5
6 MBR2HCTG, MBRB2HCTG, MBR2HCTG, NRVBB2HCTTG R(t), TRNSIENT THERM RESISTNCE. D = SINGE PUSE.... t, TIME (sec) igure. Thermal Response Junction to Case for MBR2HCT P (pk) t t 2 DUTY CYCE, D = t /t 2 +V DD I mh COI V D BV DUT MERCURY SWITCH S I D DUT I I D V DD t t t 2 t igure. Test Circuit The unclamped inductive switching circuit shown in igure was used to demonstrate the controlled avalanche capability of this device. mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S is closed at t the current in the inductor I ramps up linearly; and energy is stored in the coil. t t the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BV DUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2. By solving the loop equation at the point in time when S is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the V DD power supply while the diode is in breakdown (from t to t 2 ) minus any losses due to finite component resistances. ssuming the component resistive igure 2. Current Voltage Waveforms elements are small Equation () approximates the total energy transferred to the diode. It can be seen from this equation that if the V DD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S was closed, Equation (2). EQUTION (): W V 2 I 2 PK BV DUT BV DUT V DD EQUTION (2): W V 2 I 2 PK 6
7 MBR2HCTG, MBRB2HCTG, MBR2HCTG, NRVBB2HCTTG PCKGE DIMENSIONS D 2 PK CSE 8B ISSUE K T SETING PNE B G 2 S D P (.5) M T B M K C H E V W J W NOTES:. DIMENSIONING ND TOERNCING PER NSI Y.5M, CONTROING DIMENSION: INCH.. 8B THRU 8B OBSOETE, NEW STNDRD 8B. INCHES MIIMETERS DIM MIN MX MIN MX B C D E G. BSC 2.5 BSC H J K M N 97 RE 5. RE P.79 RE 2. RE R.9 RE.99 RE S V VRIBE CONIGURTION ZONE R N U P STYE : PIN. NODE 2. CTHODE. NODE. CTHODE M M M VIEW W W VIEW W W VIEW W W 2 SODERING OOTPRINT* X.5 2X PITCH DIMENSIONS: MIIMETERS *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. 7
8 MBR2HCTG, MBRB2HCTG, MBR2HCTG, NRVBB2HCTTG PCKGE DIMENSIONS TO 22 CSE 22 9 ISSUE G H Q Z V G B 2 N D K T U S R J C T SETING PNE NOTES:. DIMENSIONING ND TOERNCING PER NSI Y.5M, CONTROING DIMENSION: INCH.. DIMENSION Z DEINES ZONE WHERE BODY ND ED IRREGURITIES RE OWED. INCHES MIIMETERS DIM MIN MX MIN MX B C D G H J K N Q R S T U V Z STYE 6: PIN. NODE 2. CTHODE. NODE. CTHODE 8
9 MBR2HCTG, MBRB2HCTG, MBR2HCTG, NRVBB2HCTTG PCKGE DIMENSIONS K Q H B 2 G N D P Y U.25 (.) M B M Y C TO 22 UPK CSE 22D ISSUE K T S J R SETING PNE NOTES:. DIMENSIONING ND TOERNCING PER NSI Y.5M, CONTROING DIMENSION: INCH. 22D- THRU 22D-2 OBSOETE, NEW STNDRD 22D-. INCHES MIIMETERS DIM MIN MX MIN MX B C D G. BSC 2.5 BSC H J K N.2 BSC 5.8 BSC Q R S U STYE : PIN. NODE 2. CTHODE. NODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICTION ORDERING INORMTION ITERTURE UIMENT: iterature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 827 US Phone: or 8 86 Toll ree US/Canada ax: or Toll ree US/Canada orderlit@onsemi.com N. merican Technical Support: Toll ree US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer ocus Center Phone: ON Semiconductor Website: Order iterature: or additional information, please contact your local Sales Representative MBR2HCT/D
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