GST CMP BLANKET and TEST PATTERNED WAFERS

Transcription

1 C M P C h a r a c t e r I z a t I o n S o l u t I o n s GST CMP BLANKET and TEST PATTERNED WAFERS MARCH 20, 2009 PREPARED BY SOOKAP HAHN PRESIDENT SKW ASSOCIATES, INC SCOTT BOULEVARD SANTA CLARA, CA TEL: CELL: SKW Associates, Inc.

2 C M P C h a r a c t e r I z a t I o n S o l u t I o n s I. BLANKET FILM WAFER Both 200 & 300mm Wafers Are Available Method of GST Film Deposition: PVD (Magnetron Sputtering) Typical Film Stack: Si/1kA SiO2/ Å TiN/2.5-3kA GST CVD Deposition Method is Available Upon Request Deposited Surface Roughness - ATM measurement after GST 2500Å Sputtering - Scan Area: 500 µm x 500 µm - RMS 9.54Å - Ra 7.37Å SKW Associates, Inc.

3 CHANGE IN MASK LAYOUT FROM SKW3 (REMOVAL OF SEM STRUCTURES) SKW3 MASK FLOOR PLAN PATTERN SIZE (LINE) a/b= 50/50 μm No Patter n 10/90 80/20 70/30 50/50 No 20/80 patter 90/10 30/70 n 50/50 40/60 30/70 60/40 50/50 0.5/ / /10 50/50 250/ / 1.0 5/5 25/25 100/ / 500 SEM STRUCTURES REMOVED! a b a = 10 um TEOS 2,000 A b = 90 um Si WAFER SiN 1,000 A SiO 10,000 A 2 CROSS SECTIONAL VIEW MONITORING PATTERN

4 SKW Associates, Inc, 2920 Scott Blvd. Santa Clara, CA Phone (408) Fax (408) http// SKW 8O-GST (200mm) Wafer Specifications DATE: December 17, mm 4mm 10% 80% 70% 100% 20% 0% 90% 30% GST 3000Å TiN 200Å-300Å 1 µm 2 µm 40% 30% 5 µm 20 µm SEM struct. 10 µm 50 µm 60% 100 µm 200 µm 500 µm 1000 µm 20mm Si WAFER TEOS 2000Å SiN 1000Å SiO2 10,000Å Cross Sectional View 20mm SKW 8-GST Mask Floor Plan logo/ pattern rec. mark

5 Specification for Patterning Center Die X Location Center Die Y Location Die Size: X Die Size: Y Die Spacing X/Y Wafers must be patterned all the way to the edges of the wafer, i.e. no area anywhere on wafer unpatterned. (Under certain stepper operating conditions, 2mm edge exclusion is allowed.) mm mm 20 mm 20 mm 120 / 120 µm +/- 100 µm +/- 100 µm Line Width Variation (measured on 10 µm, 90 µm structures) 10 µm, 90 µm Pad Oxide Film Thickness 10,000 Å SiN Film Thickness 1000 Å

6 PETEOS Oxide Film Thickness 2000 Å PVD TiN Film Thickness 200 Å GST Film Thickness 3000 A

7 SKW Associates, Inc, 2920 Scott Blvd. Santa Clara, CA Phone (408) Fax (408) http// SKW 8N-GST (200mm) Wafer Specifications DATE: December 17, mm 4mm 10% 80% 70% 100% 20% 0% 90% 30% GST 3000Å 1 µm 2 µm 40% 30% 5 µm 20 µm SEM struct. 10 µm 50 µm 60% 100 µm 200 µm 500 µm 1000 µm 20mm TiN 200Å-300Å SiN 1650Å SiO2 200Å Si WAFER Cross Sectional View 20mm SKW 8-GST Mask Floor Plan logo/ pattern rec. mark

8 Specification for Patterning Center Die X Location Center Die Y Location Die Size: X Die Size: Y Die Spacing X/Y Wafers must be patterned all the way to the edges of the wafer, i.e. no area anywhere on wafer unpatterned. (Under certain stepper operating conditions, 2mm edge exclusion is allowed.) mm mm 20 mm 20 mm 120 / 120 µm +/- 100 µm +/- 100 µm Line Width Variation (measured on 10 µm, 90 µm structures) 10 µm, 90 µm Pad Oxide Film Thickness 200 Å SiN Film Thickness 1650 Å

9 PVD TiN Film Thickness 200 Å GST Film Thickness 3000 A

10 SKW8-GST Dishing Characterization Location Maps 50/50 10/90 80/20 70/30 50/50 No Patter n 20/80 No patter n 90/10 30/70 50/50 40/60 30/70 60/40 50/50 0.5/ 2.5/ 10/10 50/ (1) (4) (5) 1.0/ 100/ 5/5 25/ (2) (3) (6) 250/ / 500 SITE LOCATIONS