Reliability and Modeling in Harsh Environments for Space Applications

Transcription

1 MOS AK Reliability and Modeling in Harsh Environments for Space Applications Farzan Jazaeri Christian Enz Integrated Circuits Laboratory (ICLAB), Ecole Polytechnique Fédérale de Lausanne (EPFL)

2 Outline Harsh Environments Radiation Effects on Electronics Physics-based modeling and characterization Ionizing and Non-ionizing Radiations Radiation Environment Close to Earth Radiation Effects on MOSFETs Low Temperature (Cryogenic) Electronics Physics-based modeling and characterization Compact models

3 Outline Harsh Environments Radiation Effects on Electronics Physics-based modeling and characterization Ionizing and Non-ionizing Radiations Radiation Environment Close to Earth Radiation Effects on MOSFETs Low Temperature (Cryogenic) Electronics Physics-based modeling and characterization Compact models

4 Extreme Harsh Environments [1] Radiative stresses Cosmic rays and Van Allen belts Temperature Mechanical stresses Vibration, Shock, and pressure Chemical Saltwater, Moisture, Noxious gases Khanna, Vinod Kumar, Operating electronics beyond conventional limits, IOP Publishing, Colliding Galaxies Active Galactic ATLAS event Supernova CMS event Images: NASA

5 Extreme Harsh Environments [2] +470 º C krad TID ~7 krad 0 º C 50 º C LEO: 1-3 yrs ( cycles) TID krad Lifetime: ~1 hr (on surface) Earth Orbiter GEO: yrs ( cycles) Venus TID ~7 Mrad +25 º C 125 º C Lifetime: min/hrs (on surface) Mars Rover (Images: NASA) 5 krad /yr Lifetime: 90 days Europa 145 º C

6 Outline Harsh Environment Radiation Effects on Electronics Physics-based modeling and characterization Ionizing and Non-ionizing Radiations Radiation Environment Close to Earth Radiation Effects on MOSFETs Low Temperature (Cryogenic) Electronics Physics-based modeling and characterization Compact models

7 Non-ionizing and Ionizing Radiations Non-ionizing is electromagnetic radiation that does not carry enough energy per quantum (photon energy) to ionize atoms or molecules. Ionizing radiation is radiation that carries enough energy to liberate electrons from atoms or molecules made up of energetic subatomic particles, ions or atoms moving at high speeds, and electromagnetic waves.

8 Radiation Effects on MOSFETs Radiation Effects: Total Ionizing Dose (TID) long term failure time dependent, Single Event Effects (SEE) an instantaneous failure, described by a mean time, Soft and hard errors Can partially mitigate with shielding Image for ATLAS from CERN: Higher level of total ionizing dose (1 Grad for the innermost components) 1Grad=1e7Gy=1e7 J/kg

9 Total Ionizing radiation effects on MOSFETs Source G Gate Source STI Substrate (p-type) Drain Drain Drain Current (Log) Pre-irradiation Gate Voltage Effects of Q ot and Q it in all oxides S G D Mobility Degradation Subthreshold Swing Degradation Shift in threshold Voltage Leakage Current Farzan Jazaeri et al., Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs, IEEE Journal of the Electron Devices Society, 2018

10 Total Ionizing radiation effects on MOSFETs G Source Gate + Drain Source Drain STI Substrate (p-type) + Drain Current (Log) Pre-irradiation Gate Voltage Effects of Q ot and Q it in all oxides S G D Mobility Degradation Subthreshold Swing Degradation Shift in threshold Voltage Leakage Current Farzan Jazaeri et al., Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs, IEEE Journal of the Electron Devices Society, 2018

11 Total Ionizing radiation effects on MOSFETs G Source Gate + Drain Source Drain STI Substrate (p-type) + Drain Current (Log) Pre-irradiation Gate Voltage Effects of Q ot and Q it in all oxides S G D Mobility Degradation Subthreshold Swing Degradation Shift in threshold Voltage Leakage Current Farzan Jazaeri et al., Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs, IEEE Journal of the Electron Devices Society, 2018

12 onizing radiation effects on 28nm MOSFETs C.-M. Zhang Farzan Jazaeri et al., "Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs," IEEE TNS, 2017.

13 Ionizing radiation effects on 28nm MOSFETs V GS =0 V Test chip under probes Bias for irra.: V gs =V ds =1.2V C.-M. Zhang, Farzan Jazaeri et al., "Impact of GigaRad Ionizing Dose on 28 nm Bulk MOSFETs for Future HL-LHC," in th European Solid-State Device Research Conference (ESSDERC), 2016.

14 Ionizing radiation effects on FinFETs Analytical model (lines) and TCAD simulations (markers) Farzan Jazaeri et al., Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs, IEEE Journal of the Electron Devices Society, 2018

15 Ionizing radiation effects on FinFETs Uniform distribution of interface trap density (lines) and TCAD simulations (markers) Farzan Jazaeri et al., Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs, IEEE Journal of the Electron Devices Society, 2018

16 Outline Harsh Environments Radiation Effects on Electronics Physics-based modeling and characterization Ionizing and Non-ionizing Radiations Radiation Environment Close to Earth Radiation Effects on MOSFETs Low Temperature (Cryogenic) Electronics Physics-based modeling and characterization Compact models

17 Introduction Cryogenic MOS transistor models are essential to assess speed-power-noise trade-offs during design of cryogenic qubit control circuits. Cryo-characterization Physics-based Cryo-MOS model Compact models (EKV, BSIM6, UTSOI) Quantify cryogenic impact on circuit design Figuresof-Merit Cryo?

18 28 nm Bulk CMOS Characterization Measured devices and Sample chip Type W/L T [K] nmos 3 μm / 1 μm 4.2, 300 pmos 3 μm / 1 μm 4.2, 77, 300 nmos 1 μm / 90 nm 4.2, 77, 300 nmos 3 μm / 28 nm 4.2, 300 nmos 300 nm / 28 nm 4.2, 77, 300 Measured devices (28 nm Bulk CMOS Process) Sample chip Arnout Beckers, Farzan Jazaeri, Christian Enz, Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing, ESSDERC2017.

19 28 nm Bulk CMOS Characterization Transfer characteristics Arnout Beckers, Farzan Jazaeri, Christian Enz, Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing, ESSDERC2017.

20 28 nm Bulk CMOS Characterization Transfer characteristics Arnout Beckers, Farzan Jazaeri, Christian Enz, Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing, ESSDERC2017.

21 28 nm Bulk CMOS Characterization Transfer characteristics Arnout Beckers, Farzan Jazaeri, Christian Enz, Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing, ESSDERC2017.

22 Parameter Extraction: Subthreshold Swing SS (mv/dec) = KT/q ln(10) n n = (1 + C d / C ox )

23 Parameter Extraction: Subthreshold Swing SS (mv/dec) = KT/q ln(10) n n = (1 + C d / C ox ) Subthreshold swing o ΔSS long ~ 10 mv/dec at 4.2 K and 300 K

24 Parameter Extraction: Subthreshold Swing SS (mv/dec) = KT/q ln(10) n n = (1 + C d / C ox ) Subthreshold swing o ΔSS long ~ 10 mv/dec at 4.2 K and 300 K

25 Parameter Extraction: Subthreshold Swing o o Subthreshold swing ΔSS long ~ 10 mv/dec at 4.2 K and 300 K ΔSS short ~ 30 mv/dec at 4.2 K and 300 K o Short channel effects (~ 20 mv/dec) T- independent

26 Cryogenic Physics-based Modeling Important phenomena 100 mk 77 K Fermi Dirac and Boltzmann statistics (T) Intrinsic carrier concentration n i (T) Band gap widening, E g (T) Velocity saturation, Δφms, Thermal voltage (T) A.Beckers, F. Jazaeri and C. Enz, "Cryogenic MOS Transistor Model," in IEEE Transactions on Electron Devices, Farzan Jazaeri and Jean-Michel Sallese, Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors, Cambridge University Press, April Incomplete ionization, N A (T) Hot-carrier effects Decreased phonon scattering Dominant impurity / surface roughness scattering Quantum confinement Interface charge trapping, D it will affect the Subthreshold swing On-state current, leakage current Threshold voltage Mobility

27 Physics-based Modeling: Model Overview Interface charge traps Reduced phonon scattering Mobility reduction f(v G ) BCs: Continuity of dielectric displacement vectors Bulk charge neutrality Incomplete ionization Mobile charge: 2 Ψ= ρ/ ε Si Current (linear regime): Maxwell-Boltzmann validity??

28 Physics-based Modeling Model

29 Compact Modeling: BSIM6 BSIM6 Model Card Extraction at 4.2 K

30 Compact Modeling: Simplified EKV 1. Long-channel model validated on 28-nm process at 4.2 K 2. Simple expressions 3. Few parameters 4. capture physical effects 5. Fitting parameters Arnout Beckers, et al, Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing, ESSDERC2017.

31 Compact Modeling: Simplified EKV 1. Short-channel model validated on 28-nm process at 4.2 K 2. Simple expressions 3. Few parameters 4. capture physical effects 5. Fitting parameters Arnout Beckers, et al, Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing, ESSDERC2017.

32 Thank you for your attention!

33 References 1. Farzan Jazaeri and Jean-Michel Sallese, Modeling Nanowire and Double-Gate Junctionless Field- Effect Transistors, Cambridge University Press, April A. Beckers, F. Jazaeri, et al. " Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures," Solid state electronics, A. Beckers, F. Jazaeri and C. Enz, "Cryogenic MOS Transistor Model," in IEEE Transactions on Electron Devices, A. Beckers, F. Jazaeri, A. Ruffino, C. Bruschini, A. Baschirotto and C. Enz, "Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing," th European Solid-State Device Research Conference (ESSDERC), Leuven, 2017, pp A. Beckers, F. Jazaeri and C. Enz, "Characterization and Modeling of 28 nm Bulk CMOS Technology down to 4.2 K," in IEEE Journal of the Electron Devices Society. 6. A. Beckers, F. Jazaeri, H. Bohuslavskyi, L. Hutin, S. De Franceschi and C. Enz, "Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing," 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, 2018, pp F. Jazaeri, C.-M. Zhang, A. Pezzotta, and C. Enz, Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs, IEEE Journal of the Electron Devices Society, C.-M. Zhang, F. Jazaeri, et al., Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs, IEEE Transactions on Nuclear Science, 2017.

34 References 1. C.-M. Zhang, F. Jazaeri et al., Characterization and Modeling of GigaRad-TID-Induced Drain Leakage Current in a 28-nm Bulk CMOS Technology, accepted in 2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC), C.-M. Zhang, F. Jazaeri, et al., Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs, in th European Solid-State Device Research Conference (ESSDERC), C.-M. Zhang, F. Jazaeri, et al., GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs, in 2016 IEEE Nuclear Science Symposium (NSS), A. Pezzotta, C.-M. Zhang, F. Jazaeri, C. Bruschini, G. Borghello, F. Faccio, S. Mattiazzo, A. Baschirotto, C. Enz, Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL- LHC, in th European Solid-State Device Research Conference (ESSDERC), Khanna, Vinod Kumar, Operating electronics beyond conventional limits, IOP Publishing, 2017.

35 High Temperature Electronics Sources of ionizing radiation in interplanetary space Solar Orbiter Khanna, Vinod Kumar, Operating electronics beyond conventional limits, IOP Publishing, Image: NASA

36 Impact on Analog Figures-of-Merit: G m /I D W 2 kt Ispec = IspecW with IspecW= 2n µ Cox UT and UT = L q 1. Simple model of current efficiency at 4.2 K validated on a 28-nm process 2. The G m I D -characteristic is the basis for additional analog metrics (noise, gain, linearity, ), as well as transistor sizing and biasing.

37 Compact Modeling: BSIM6 Cryo?

38 Compact Modeling: BSIM6 Cryo? 28 nm, 4.2 K BSIM6 BSIM6 s temperature scaling cannot catch SS at 4.2 K for 28 nm. For long channel T-scaling works.

39 Radiation Environment Close to Earth Van Allen belts: Particles trapped in the Van Allen belts i.e. energetic charged particles, most of which originate from the solar wind (protons, electrons, and heavy ions). Cosmic rays: Galactic cosmic ray particles and particles from solar events (mass ejections and solar flares). Phoenix Mars Lander Images Credit: NASA Solar Orbiter