Liejian Chen (IHEP) On behalf of IHEP ATLAS Group

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Liejian Chen (IHEP) On behalf of IHEP ATLAS Group Many thanks for ATLAS CMOS

Jens Dopke 2, Zhige Zhang 2, Steve MacMahon 2, Fergus Wilson 2, Dionisio Doering

Safdari 3, Su Dong 3 1 Institute of High Energy Physics, Beijing, China 2

1 Liejian Chen (IHEP) On behalf of IHEP ATLAS Group Many thanks for ATLAS CMOS Strip Calibration Yubo Han 1, Hongbo Zhu 1, Giulio Villani 2, Iain Sedgwick 2, Jens Dopke 2, Zhige Zhang 2, Steve MacMahon 2, Fergus Wilson 2, Dionisio Doering 3, Pietro Caragiulo 3, Larry Ruckman 3, Camillo Tamma 3, Mazin Khader 3, Murtaza Safdari 3, Su Dong 3 1 Institute of High Energy Physics, Beijing, China 2 Rutherford Appleton Laboratory, Didcot, UK 3 SLAC National Accelerator Laboratory, CA, USA 1

2 Outline Introduction of CMOS Strip Primary test results of OverMOS Test results of the Chess 2 in-pixel electronics Conclusion 2

CMOS Strips Introduction ATLAS evaluate HV/HR CMOS technologies for strip region o Strip is composed from pixels with individual readout o Similar readout chain: sensor (Analog FE +

3 CMOS Strips Introduction ATLAS evaluate HV/HR CMOS technologies for strip region o Strip is composed from pixels with individual readout o Similar readout chain: sensor (Analog FE + comparators)->abcn ->HCC Possible improvements compared to present strip sensor: o Significantly lower material budget - eliminate the need for bump bonding or other challenging interconnect methods - can be thinned to less than 100um o Smaller pixel size - not limited by bump bonding o Lower costs - can be implemented in standard commercial technologies 3

4 HV/HR-CMOS Technology Depleted CMOS benefits from HV/HR technology Q "#$ d ρ V High-Resistivity CMOS technology o Developed for image applications o Depletion zone ~10-20um o o High resistivity: up to kohm*cm TowerJazz-OverMOS 1 -> TowerJazz OverMOS 1.1 High-Voltage CMOS technology o Standard n-in-p sensor o Depletion zone ~10-20um o High bias voltage: ~100 V o Challenging for hybrid pixel readout electronics o AMS-Chess1 -> AMS-Chess2 HR-CMOS Layout HV-CMOS Layout 4

Introduction of OverMOS OverMOS 1.0 o P and n type substrates o Numbers of topology of the collecting nwells o But it has shortage problems OverMOS 1.

5 Introduction of OverMOS OverMOS 1.0 o P and n type substrates o Numbers of topology of the collecting nwells o But it has shortage problems OverMOS 1.1 o similar structure, but collection n-wells surrounded with P-type rings o Passive pixel arrays (40X40um2, 40X400 um2) o Active pixel arrays: AC/DC coupled with Inpixel electronics (40 X 400 um2) OverMOS 1 with p/n type sub PASSIVE ACTIVE OverMOS 1.1 with p type sub 5

6 Passive Pixel DC Properties Vbias 40um P++ N++ 40um Probing the central pixel (40X40 um 2 ): HV bias voltage applied to n-well and p- well grounded Irradiated at Ljubljana in October 2017: 1e13, 5e13, 1e14 and 5e14 n eq /cm 2 6

applied through the port of A250CF Laser information: ND filter: 1.

7 Laser Injection on Passive Pixels Passive Pixels Signal of the sensor amplified with an external preamplifier (A250CF coolfet Charge preamplifier) Shielding box Bias voltage applied through the port of A250CF Laser information: ND filter: (decrease intensity) Lo_IR (1064 nm) Shutter: 4.5x4.5 um 2 Charge preamplifier or fc/um 150 Laser attenuation 7

Integration time 400 ns <Q injected> = 1.

A250CF, via a 400 Meg resistor chain Pos

8 Laser Response of Passive Pixels Total collected charge vs. Vbias, points A,B,C. Integration time 400 ns <Q injected> = fc/um HVbias provided through the A250CF, via a 400 Meg resistor chain Pos A: Blue (0,0) Pos B: Black (15,0) Pos C: Red (15,-15) 8

9 TCT Measurements on Active Pixel Arrays TCT scanning on active pixel arrays confirm that the shortage problem have been solved The diodes are isolated by P-rings in OverMOS 1.1, so only the hit channel does show a significant response with negligible crosstalk comparing to OverMOS1.0 Mather Daughter Sensor board board Laser 9

10 Top-TCT/Edge-TCT Top-TCT and Edge-TCT scanned indicate the bias strange behavior 0 V 1 V 2 V 3 V 4 V 5 V Surface direction (Y [um]) 0 V 0.5 V 0.7 V Depth direction (X [um]) 0.9 V 1.0 V 1.1 V 1.2 V 1.5 V 2.0 V 3.0 V 4.0 V 5.0 V 10

11 55 Fe Experiment 55 Fe5.9 kev/3.6 ev 1640 e - Not very clear spectrum due to low statistic Mather board Sensor bonded on daughter board Partial 5.9 kev 55 Fe source 11

Introduction of AMS-Chess2 Designed at UCSC and SLAC, manufactured in the AMS-H35 technology by AMS after being successful in porotypes HV-CMOS Chess1 n-in-p with 4 substrate resistivities (20 1000 Ω

12 Introduction of AMS-Chess2 Designed at UCSC and SLAC, manufactured in the AMS-H35 technology by AMS after being successful in porotypes HV-CMOS Chess1 n-in-p with 4 substrate resistivities ( Ω cm) Full reticle monolithic demonstrator chip 3 fully digital striplet arrays + 1 test filed with analog test structures IHEP (Yubo) attend the test of in-pixel electronics 2 array mirrored Shared pads Test structures 1 array standalone Can be diced away. 12

13 In-pixel Electronics Charge preamplifier and comparator are implanted in pixels Challenging in adjustment to make the electronics work stable 13

14 Test on ASICs Cooling module added to reduce the noise Acquire stable results with good BL/threshold linearity Update firmware to enable external pulse injection Power supply for the peltier module Thermometer the temperature near to the chip. Carrier board Daughter board #19 14

Test Results of Chess2 Average efficiency of multiple pixels @ different

15 Test Results of Chess2 Average efficiency of multiple different external pulses injected Beam test is on gonging after enable bias the board 15

16 ATLAS commenced R&D effort to evaluate depleted CMOS pixels (HV/HR) IHEP attend most test of OverMOS 1.1 and Chess 2 in-pixel electronics test Better understanding of HR-CMOS sensor before/after irradiation and HV-CMOS in-pixel electronics 16

Strip Detectors. Principal: Silicon strip detector. Ingrid--MariaGregor,SemiconductorsasParticleDetectors. metallization (Al) p +--strips

Strip Detectors. Principal: Silicon strip detector. Ingrid--MariaGregor,SemiconductorsasParticleDetectors. metallization (Al) p +--strips Strip Detectors First detector devices using the lithographic capabilities of microelectronics First Silicon detectors -- > strip detectors Can be found in all high energy physics experiments of the last