Acoustic microscopy for 3D-SiP failure analysis
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1 Acoustic microscopy for 3D-SiP failure analysis Peter Czurratis PVA TePla Analytical Systems GmbH, Westhausen, Germany Sebastian Brand Fraunhofer Center for Applied Microstructure Diagnostics (CAM) Halle, Germany WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 1
2 Agenda Status Acoustic GHz-Microscopy System development TSV-inspection using GHz-SAM News for Conventional SAM Signal processing for resolution enhancement Design of customized ultrasonic transducers WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 2
3 GHz-SAM Device: status development Features and Performance - Combined rf-chain allowing application of acoustic frequencies between 100 MHz and 2 GHz - Extremely high acoustic resolution (~1 µm) - Quantitative evaluation of local elastic coefficients possible - 2 mm x 2 mm lateral scan range with 50 nm scan resolution - 50 Hz scan-line repetition frequency - V(f) and V(z) inspection method: quantification of SAM data`s - Scanner can be adapted to any other imaging device: (optical microscopes-top tabel or inverted, large field scanners for SAMs) WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 3
4 GHz-SAM Details System Development - new electronics for power supply unit ready, increased stability - long-term test of rf-chain showed good performance - combination with optical microscopy: simplified focussing by use of optical microscope - prototype ready for case studies and sample tests Combined optical & acoustic inspection WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 4
5 Case Study : Non-destructive TSV Inspection using Acoustic GHz-SAM WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 5
6 Sample: TSV inspection for voids Samples courtesy FhG-ASSID Single TSV C-scan, 1 GHz, surface scan FIB cross section Cu filled TSV Cu filled TSVs <15µm diameter GHZ SAM to detect and locate voids in TSV-filling Target preparation by Plasma-FIB (Fraunhofer IWMH) of inspected TSV to cross check SAM results 50 µm De-focus: Imaging of defects in the depth-data gate selection behind the surface echo WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 6
7 GHz SAM inspection: cross section reparation by Plasma-FIB PFIB Cut Additional SAM signals found at right TSV structure in the C-scan image f=1 GHz FIB cross section through the area detected with the GHZ SAM: void detected, correspondence to SAM results TSVs with high back reflected amplitude in GHz signal containing voids
![amplitude [V] amplitude [V] TSV-Inspection by GHz-SAM: Next Steps Correlation between features in V(z) curves signature and sample condition: -defect free TSV -TSV containing voids C-Scan image 1](/docs-images/75/72663515/images/8-2.jpg "GHz, de focused 3 2 1 0-1 -2 V(z) - signatures -3-90 -80-70 -60-50 -40-30 3 z [µm] 2 1 0-1 50 µm -2-3 -90-80 -70-60 -50-40 -30 z [µm] TSV with voids showing different v(z) signature- Rayleigh wave")
8 amplitude [V] amplitude [V] TSV-Inspection by GHz-SAM: Next Steps Correlation between features in V(z) curves signature and sample condition: -defect free TSV -TSV containing voids C-Scan image 1 GHz, de focused V(z) - signatures z [µm] µm z [µm] TSV with voids showing different v(z) signature- Rayleigh wave oscillation WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 8
9 Case Study : Non-destructive Inspection of µ-bumps using Acoustic GHz-SAM WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 9
10 SAM: Micro-Bump Analysis sample description: µ-bumps BCB (5 µm) interconnect wiring Silicon (800 µm) - Investigations of µ-bumps for micro voids, delaminations, cracks - delamination between wiring and BCB layer WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 10
11 SAM: Micro-Bump Analysis Acoustic Inspection at 1 GHz (through 5µm of BCB) Samples courtesy by D.Temple, RTI FIB cut SAM C-scan, f= 1GHz FESEM, 5 kv Date ESiP confidential Page 11
12 SAM: Micro-Bump Analysis Acoustic Inspection at 1 GHz (through 5µm of BCB) delaminations underfill-defect used for image alignment acoustic 1GHz Samples courtesy by D.Temple, RTI delaminations detected by GHz-SAM Date ESiP confidential Page 12
13 New Developments : Extended Signal Analysis by discrete data processing WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 13
14 Conventional SAM Resolution Enhancement Die bump IF without pre-processing Die bump interface with pre-processing pre-processing rf-data during scan analog -> extremely fast (real-time) HILBERT integration of signal Increased signal to noise ratiobetter resolution: voids in underfill and Bump structure resolution WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 14
15 New Developments : Transducer Design & Manufacturing WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 15
16 Conventional SAM Transducer Design - Piezo element based on thin-film technology - Improved sputtering of piezo layers - Development of new electronic devices to match acoustic frequency and bandwidth - Calculation of sound fileds: design application specific transducers piezo element buffer rod piezo-active element spherical cavity (calotte) 240 MHz-8mm focal length Good results for investigations of stack dies, bump structures flip chips WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 16
17 Acknowledgements Samples courtesy: RTI International Fraunhofer ASSID WS on 3D SiP, ESREF 2012 Cagliari, Italy, October 1st, 2012 Page 17
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