MCP1525/ V and 4.096V Voltage References. Features. Description. Applications. Temperature Drift. Typical Application Circuit.

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1 MCP/.V ad.96v Voltage Refereces Features Precisio Voltage Referece Outut Voltages:.V ad.96v Iitial Accuracy: ±% (max.) Temerature Drift: ± m/ C (max.) Outut Curret Drive: ± ma Maximum Iut Curret: + C (max.) Packages: TO-9 ad SOT-- Idustrial Temerature Rage: - C to +8 C Alicatios Battery-owered Systems Hadheld Istrumets Istrumetatio ad Process Cotrol Test Equimet Data Acquisitio Systems Commuicatios Equimet Medical Equimet Precisio Power sulies 8-bit, -bit, -bit A/D Coverters (ADCs) D/A Coverters (DACs) Tyical Alicatio Circuit C IN. µf (otioal) V DD MCP MCP V IN V OUT V SS Descritio The Microchi Techology Ic. MCP/ devices are.v ad.96v recisio voltage refereces that use a combiatio of a advaced CMOS circuit desig ad EPROM trimmig to rovide a iitial tolerace of ±% (max.) ad temerature stability of ± m/ C (max.). I additio to a low quiescet curret of µa (max.) at C, these devices offer a clear advatage over the traditioal Zeer techiques i terms of stability across time ad temerature. The outut voltage is.v for the MCP ad.96v for the MCP. These devices are offered i SOT-- ad TO-9 ackages, ad are secified over the idustrial temerature rage of - C to +8 C. Temerature Drift MCP Outut Voltage (V) MCP Package Tyes Ambiet Temerature ( C) MCP MCP TO-9 MCP MCP MCP SOT MCP Outut Voltage (V) V REF C L µf to µf V IN V OUT V SS Basic Cofiguratio V SS V OUT V IN Microchi Techology Ic. DS6B-age

2 MCP/. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratigs V IN V SS...7.V Iut Curret (V IN )... ma Outut Curret (V OUT )... ± ma Cotiuous Power Dissiatio (T A = C)... mw All Iuts ad Oututs...V SS.6V to V IN +.V Storage Temerature...-6 C to + C Maximum Juctio Temerature (T J )...+ C ESD rotectio o all is (HBM)... kv Notice: Stresses above those listed uder Absolute Maximum Ratigs may cause ermaet damage to the device. This is a stress ratig oly ad fuctioal oeratio of the device at those or ay other coditios above those idicated i the oeratioal listigs of this secificatio is ot imlied. Exosure to maximum ratig coditios for exteded eriods may affect device reliability. DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Uless otherwise idicated, T A =+ C, V IN =.V, V SS =GND, I OUT = ma ad C L =µf. Parameter Sym Mi Ty Max Uits Coditios Outut Outut Voltage, MCP V OUT.7.. V.7V V IN.V Outut Voltage, MCP V OUT V.V V IN.V Outut Voltage Drift TCV OUT 7 m/ C T A = - C to 8 C (Note ) Log-Term Outut Stability V OUT m/hr Exosed 8 + C (see Figure -), + C Load Regulatio ΔV OUT /ΔI OUT. mv/ma I OUT = ma to - ma ΔV OUT /ΔI OUT.6 mv/ma I OUT = ma to ma ΔV OUT /ΔI OUT. mv/ma I OUT = ma to - ma, T A = - C to 8 C ΔV OUT /ΔI OUT. mv/ma I OUT = ma to ma, T A = - C to 8 C Outut Voltage Hysteresis V HYS m Note Maximum Load Curret I SC ±8 ma T A = - C to 8 C, V IN =.V Iut-to-Outut Droout Voltage V DROP 7 mv I OUT = ma Lie Regulatio ΔV OUT /ΔV IN 7 µv/v V IN =.7V to.v for MCP, V IN =.V to.v for MCP ΔV OUT /ΔV IN µv/v V IN =.7V to.v for MCP, V IN =.V to.v for MCP, T A = - C to 8 C Iut Iut Voltage, MCP V IN.7. V T A = - C to 8 C Iut Voltage, MCP V IN.. V T A = - C to 8 C Iut Curret I IN 86 µa No load I IN 9 µa No load, T A = - C to 8 C Note : Outut temerature coefficiet is measured usig a box method, where the + C outut voltage is trimmed as close to tyical as ossible. The 8 C outut voltage is the agai trimmed to zero out the temco. : Outut Voltage Hysteresis is defied as the chage i outut voltage measured at + C before ad after cyclig the temerature to +8 C ad - C; refer to Sectio.. Outut Voltage Hysteresis. DS6B-age Microchi Techology Ic.

3 MCP/ AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Uless otherwise idicated, T A =+ C, V IN =.V, V SS =GND, I OUT = ma ad C L =µf. Parameter Sym Mi Ty Max Uits Coditios AC Resose Badwidth BW khz Iut ad Load Caacitors (see Figure -) Iut Caacitor C IN. µf Notes Load Caacitor C L µf Notes Noise MCP Outut Noise Voltage E o 9 µv P-P. Hz to Hz E o µv P-P Hz to khz MCP Outut Noise Voltage E o µv P-P. Hz to Hz E o 7 µv P-P Hz to khz Note : The iut caacitor is otioal; Microchi recommeds usig a ceramic caacitor. : These arts are tested at both µf ad µf to esure roer oeratio over this rage of load caacitors. A wider rage of load caacitor values has bee characterized successfully, but is ot tested i roductio. TEMPERATURE SPECIFICATIONS Electrical Characteristics: Uless otherwise idicated, T A =+ C, V IN =.V ad V SS = GND. Parameter Sym Mi Ty Max Uits Coditios Temerature Rages Secified Temerature Rage T A - +8 C Oeratig Temerature Rage T A - + C Note Storage Temerature Rage T A -6 + C Thermal Package Resistaces Thermal Resistace, TO-9 θ JA C/W Thermal Resistace, SOT-- θ JA 6 C/W Note : These voltage refereces oerate over the Oeratig Temerature Rage, but with reduced erformace. I ay case, the iteral Juctio Temerature (T J ) must ot exceed the Absolute Maximum secificatio of + C.. Secificatio Descritios ad Test Circuits.. OUTPUT VOLTAGE Outut voltage is the referece voltage that is available o the outut i (V OUT )... INPUT VOLTAGE The iut (oeratig) voltage is the rage of voltage that ca be alied to the V IN i ad still have the device roduce the desigated outut voltage o the V OUT i... OUTPUT VOLTAGE DRIFT (TCV OUT ) The outut temerature coefficiet or voltage drift is a measure of how much the outut voltage (V OUT ) will vary from its iitial value with chages i ambiet temerature. The value secified i the electrical secificatios is measured ad equal to: EQUATION -: ΔV TCV OUT V NOM OUT = ( m C) ΔT A Where: V NOM V NOM =.V, MCP =.96V, MCP Microchi Techology Ic. DS6B-age

4 MCP/ -Lead Plastic Trasistor Outlie (TO) (TO-9) E D L B c A R Uits INCHES* MILLIMETERS Dimesio Limits MIN NOM MAX MIN NOM MAX Number of Pis Pitch..7 Bottom to Package Flat A Overall Width E Overall Legth D Molded Package Radius R Ti to Seatig Plae L Lead Thickess c Lead Width B Mold Draft Agle To 6 6 Mold Draft Agle Bottom *Cotrollig Parameter Notes: Dimesios D ad E do ot iclude mold flash or rotrusios. Mold flash or rotrusios shall ot exceed. (.mm) er side. JEDEC Equivalet: TO-9 Drawig No. C- DS6B-age Microchi Techology Ic.

5 MCP/ -Lead Plastic Small Outlie Trasistor (TT) (SOT) E E B D c A A φ A L Uits Dimesio Limits Number of Pis Pitch Outside lead itch (basic) Overall Height A Molded Package Thickess A Stadoff A Overall Width E Molded Package Width E Overall Legth D Foot Legth L Foot Agle φ Lead Thickess c Lead Width B Mold Draft Agle To Mold Draft Agle Bottom * Cotrollig Parameter Sigificat Characteristic MIN INCHES* NOM MAX MILLIMETERS MIN NOM Notes: Dimesios D ad E do ot iclude mold flash or rotrusios. Mold flash or rotrusios shall ot exceed. (.mm) er side. JEDEC Equivalet: TO-6 Drawig No. C- MAX Microchi Techology Ic. DS6B-age

6 MCP/ PRODUCT IDENTIFICATION SYSTEM To order or obtai iformatio, e.g., o ricig or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temerature Rage Package Device MCP: =.V Voltage Referece MCP: =.96 Voltage Referece Temerature Rage I = - C to +8 C Package TO = TO-9, Plastic Trasistor Outlie, -Lead TT = SOT, Plastic Small Outlie Trasistor, -Lead Examles: a) MCPT-I/TT: Tae ad Reel, Idustrial Temerature, SOT ackage. b) MCP-I/TO: Idustrial Temerature, TO-9 ackage. c) MCPT-I/TT: Tae ad Reel, Idustrial Temerature, SOT ackage. d) MCP-I/TO: Idustrial Temerature, TO-9 ackage. Microchi Techology Ic. DS6B-age 7