MCP1525/ V and 4.096V Voltage References. Features. Description. Applications. Temperature Drift. Typical Application Circuit.

Transcription

1 /41 2.V and 4.96V Voltage References Features Precision Voltage Reference Output Voltages: 2.V and 4.96V Initial Accuracy: ±1% (max.) Temperature Drift: ± ppm/ C (max.) Output Current Drive: ±2 ma Maximum Input Current: 1 +2 C (max.) Packages: TO-92 and SOT-2- Industrial Temperature Range: -4 C to +8 C Applications Battery-powered Systems Handheld Instruments Instrumentation and Process Control Test Equipment Data Acquisition Systems Communications Equipment Medical Equipment Precision Power supplies 8-bit, 1-bit, 12-bit A/D Converters (ADCs) D/A Converters (DACs) Typical Application Circuit C IN.1 µf (optional) V DD V IN V OUT V SS Description The Microchip Technology Inc. /41 devices are 2.V and 4.96V precision voltage references that use a combination of an advanced CMOS circuit design and EPROM trimming to provide an initial tolerance of ±1% (max.) and temperature stability of ± ppm/ C (max.). In addition to a low quiescent current of 1 µa (max.) at 2 C, these devices offer a clear advantage over the traditional Zener techniques in terms of stability across time and temperature. The output voltage is 2.V for the and 4.96V for the. These devices are offered in SOT-2- and TO-92 packages, and are specified over the industrial temperature range of -4 C to +8 C. Temperature Drift Output Voltage (V) Package Types Ambient Temperature ( C) TO-92 SOT Output Voltage (V) V REF C L 1 µf to 1 µf V IN V OUT 1 2 V SS Basic Configuration 1 2 V SS V OUT V IN 2 Microchip Technology Inc. DS216B-page 1

2 /41 1. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings V IN V SS...7.V Input Current (V IN )...2 ma Output Current (V OUT )... ±2 ma Continuous Power Dissipation (T A = 12 C) mw All Inputs and Outputs...V SS.6V to V IN +1.V Storage Temperature...-6 C to +1 C Maximum Junction Temperature (T J ) C ESD protection on all pins (HBM)... 4 kv Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, T A =+2 C, V IN =.V, V SS =GND, I OUT = ma and C L =1µF. Parameter Sym Min Typ Max Units Conditions Output Output Voltage, V OUT V 2.7V V IN.V Output Voltage, V OUT V 4.V V IN.V Output Voltage Drift TCV OUT 27 ppm/ C T A = -4 C to 8 C (Note 1) Long-Term Output Stability V OUT 2 ppm/hr Exposed C (see Figure 1-1), +2 C Load Regulation ΔV OUT /ΔI OUT. 1 mv/ma I OUT = ma to -2 ma ΔV OUT /ΔI OUT.6 1 mv/ma I OUT = ma to 2 ma ΔV OUT /ΔI OUT 1. mv/ma I OUT = ma to -2 ma, T A = -4 C to 8 C ΔV OUT /ΔI OUT 1. mv/ma I OUT = ma to 2 ma, T A = -4 C to 8 C Output Voltage Hysteresis V HYS 11 ppm Note 2 Maximum Load Current I SC ±8 ma T A = -4 C to 8 C, V IN =.V Input-to-Output Dropout Voltage V DROP 17 mv I OUT = 2 ma Line Regulation ΔV OUT /ΔV IN 17 µv/v V IN = 2.7V to.v for, V IN = 4.V to.v for ΔV OUT /ΔV IN µv/v V IN = 2.7V to.v for, V IN = 4.V to.v for, T A = -4 C to 8 C Input Input Voltage, V IN 2.7. V T A = -4 C to 8 C Input Voltage, V IN 4.. V T A = -4 C to 8 C Input Current I IN 86 1 µa No load I IN 9 12 µa No load, T A = -4 C to 8 C Note 1: Output temperature coefficient is measured using a box method, where the +2 C output voltage is trimmed as close to typical as possible. The 8 C output voltage is then again trimmed to zero out the tempco. 2: Output Voltage Hysteresis is defined as the change in output voltage measured at +2 C before and after cycling the temperature to +8 C and -4 C; refer to Section Output Voltage Hysteresis. DS216B-page 2 2 Microchip Technology Inc.

3 /41 AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, T A =+2 C, V IN =.V, V SS =GND, I OUT = ma and C L =1µF. Parameter Sym Min Typ Max Units Conditions AC Response Bandwidth BW 1 khz Input and Load Capacitors (see Figure 4-1) Input Capacitor C IN.1 µf Notes 1 Load Capacitor C L 1 1 µf Notes 2 Noise Output Noise Voltage E no 9 µv P-P.1 Hz to 1 Hz E no µv P-P 1 Hz to 1 khz Output Noise Voltage E no 14 µv P-P.1 Hz to 1 Hz E no 7 µv P-P 1 Hz to 1 khz Note 1: The input capacitor is optional; Microchip recommends using a ceramic capacitor. 2: These parts are tested at both 1 µf and 1 µf to ensure proper operation over this range of load capacitors. A wider range of load capacitor values has been characterized successfully, but is not tested in production. TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, T A =+2 C, V IN =.V and V SS = GND. Parameter Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range T A C Operating Temperature Range T A C Note 1 Storage Temperature Range T A C Thermal Package Resistances Thermal Resistance, TO-92 θ JA 12 C/W Thermal Resistance, SOT-2- θ JA 6 C/W Note 1: These voltage references operate over the Operating Temperature Range, but with reduced performance. In any case, the internal Junction Temperature (T J ) must not exceed the Absolute Maximum specification of +1 C. 1.1 Specification Descriptions and Test Circuits OUTPUT VOLTAGE Output voltage is the reference voltage that is available on the output pin (V OUT ) INPUT VOLTAGE The input (operating) voltage is the range of voltage that can be applied to the V IN pin and still have the device produce the designated output voltage on the V OUT pin OUTPUT VOLTAGE DRIFT (TCV OUT ) The output temperature coefficient or voltage drift is a measure of how much the output voltage (V OUT ) will vary from its initial value with changes in ambient temperature. The value specified in the electrical specifications is measured and equal to: EQUATION 1-1: ΔV TCV OUT V NOM OUT = ( ppm C) ΔT A Where: V NOM V NOM = 2.V, = 4.96V, 2 Microchip Technology Inc. DS216B-page

4 / DROPOUT VOLTAGE The dropout voltage of these devices is measured by reducing V IN to the point where the output drops by 1%. Under these conditions the dropout voltage is equal to: EQUATION 1-2: V DROP = V IN V OUT The dropout voltage is affected by ambient temperature and load current. In Figure 2-18, the dropout voltage is shown over a negative and positive range of output current. For currents above zero milliamps, the dropout voltage is positive. In this case, the voltage reference is primarily powered by V IN. With output currents below zero milliamps, the dropout voltage is negative. As the output current becomes more negative, the input current (I IN ) reduces. Under this condition, the output current begins to provide the needed power to the voltage reference LINE REGULATION Line regulation is a measure of the change in output voltage (V OUT ) as a function of a change in the input voltage (V IN ). This is expressed as ΔV OUT /ΔV IN and is measured in either µv/v or ppm. For example, a 1 µv change in V OUT caused by a mv change in V IN would net a ΔV OUT /ΔV IN of 2 µv/v, or 2 ppm LONG-TERM OUTPUT STABILITY The long-term output stability is measured by exposing the devices to an ambient temperature of 12 C (Figure 2-9) while configured in the circuit shown in Figure 1-1. In this test, all electrical specifications of the devices are measured periodically at +2 C. V IN =.V V IN V OUT V SS FIGURE 1-1: Configuration. R L C L 1µF ±2 ma square Dynamic Life Test OUTPUT VOLTAGE HYSTERESIS The output voltage hysteresis is a measure of the output voltage error once the powered devices are cycled over the entire operating temperature range. The amount of hysteresis can be quantified by measuring the change in the +2 C output voltage after temperature excursions from +2 C to +8 C to +2 C and also from +2 C to -4 C to +2 C LOAD REGULATION (ΔV OUT /ΔI OUT ) Load regulation is a measure of the change in the output voltage (V OUT ) as a function of the change in output current (I OUT ). Load regulation is usually measured in mv/ma INPUT CURRENT The input current (operating current) is the current that sinks from V IN to V SS without a load current on the output pin. This current is affected by temperature and the output current INPUT VOLTAGE REJECTION RATIO The Input Voltage Rejection Ratio (IVRR) is a measure of the change in output voltage versus the change in input voltage over frequency, as shown in Figure 2-7. The calculation used for this plot is: EQUATION 1-: V IN IVRR = 2log V OUT ( db) DS216B-page 4 2 Microchip Technology Inc.

5 /41 2. TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, T A = +2 C, V IN =.V, V SS = GND, I OUT = ma and C L =1µF. Output Voltage (V) Ambient Temperature ( C) Output Voltage (V) Line Regulation (µv/v) V IN = 2.7V to.v V IN = 4.V to.v Ambient Temperature ( C) FIGURE 2-1: Temperature. Output Voltage vs. Ambient FIGURE 2-4: Temperature. Line Regulation vs. Ambient Load Regulation (mv/ma) and Source Current = ma to 2 ma Sink Current = ma to -2 ma Ambient Temperature ( C) Output Impedance ( ) and I OUT = +2 ma 1 I OUT = -2 ma 1.E+ 1 1.E E E+ 1k 1.E+4 1k 1.E+ 1k 1.E+6 1M Frequency (Hz) FIGURE 2-2: Load Regulation vs. Ambient Temperature. FIGURE 2-: Frequency. Output Impedance vs. Input Current (µa) Ambient Temperature ( C) Output Noise Voltage Density (μv/ Hz) 1, k 1k 1k Frequency (Hz) FIGURE 2-: Temperature. Input Current vs. Ambient FIGURE 2-6: Output Noise Voltage Density vs. Frequency. 2 Microchip Technology Inc. DS216B-page

6 /41 Note: Unless otherwise indicated, T A = +2 C, V IN =.V, V SS = GND, I OUT = ma and C L =1µF. Input Voltage Rejection Ratio (db) E+ 1 1.E E E+ 1k 1.E+4 1k 1.E+ 1k Frequency (Hz) Output Voltage (V) Output Current (ma) FIGURE 2-7: Input Voltage Rejection Ratio vs. Frequency. FIGURE 2-1: vs. Output Current. Output Voltage Output Voltage (V) I OUT = +2 ma I OUT = ma I OUT = -2 ma Input Voltage (V) Output Voltage (V) Output Voltage (V) Output Current (ma) FIGURE 2-8: Voltage. Output Voltage vs. Input FIGURE 2-11: vs. Output Current. Output Voltage Output Voltage Aging (mv) Samples Life Test (T A = +12 C) +σ Average -σ Time (hr) Maximum Load Current (ma) Sink Source Input Voltage (V) FIGURE 2-9: Output Voltage Aging vs. Time ( Device Life Test data). FIGURE 2-12: Input Voltage. Maximum Load Current vs. DS216B-page 6 2 Microchip Technology Inc.

7 /41 Note: Unless otherwise indicated, T A = +2 C, V IN =.V, V SS = GND, I OUT = ma and C L =1µF. Input Current (µa) Input Voltage (V) Output Current (ma) I OUT ΔV OUT Time (1 µs/div) Change in Output Voltage (mv) FIGURE 2-1: Voltage. Input Current vs. Input FIGURE 2-16: Response. Load Transient Output Noise Voltage (2 µv/div) Bandwidth =.1 Hz to 1 Hz E no = 22 µv RMS = 14 µv P-P Time (1 s/div) Input Voltage (V) V IN ΔV OUT Time (1 µs/div) Change in Output Voltage (mv) FIGURE 2-14: Output Noise..1 Hz to 1 Hz FIGURE 2-17: Response. Line Transient Voltage (V) V IN V OUT, V OUT, Time (2 µs/div) Dropout Voltage (mv) and Output Current (ma) FIGURE 2-1: Turn-on Transient Time. FIGURE 2-18: Current. Dropout Voltage vs. Output 2 Microchip Technology Inc. DS216B-page 7

8 /41. PIN DESCRIPTIONS Descriptions of the pins are listed in Table -1. TABLE -1:, (TO-92-) PIN FUNCTION TABLE., (SOT-2-) Symbol Description 1 V IN Input Voltage (or Positive Power Supply) 2 2 V OUT Output Voltage (or Reference Voltage) 1 V SS Ground (or Negative Power Supply).1 Input Voltage (V IN ) V IN functions as the positive power supply input (or operating input). An optional.1 µf ceramic capacitor can be placed at this pin if the input voltage is too noisy; it needs to be within mm of this pin. The input voltage needs to be at least.2v higher than the output voltage for normal operation.. Ground (V SS ) Normally connected directly to ground. It can be placed at another voltage as long as all of the voltages shift with it, and proper bypassing is observed..2 Output Voltage (V OUT ) V OUT is an accurate reference voltage output. It can source and sink small currents, and has a low output impedance. A load capacitor between 1 µf and 1 µf needs to be located within mm of this pin. DS216B-page 8 2 Microchip Technology Inc.

9 /41 4. APPLICATIONS INFORMATION 4.1 Application Tips BASIC CIRCUIT CONFIGURATION The and voltage reference devices should be applied as shown in Figure 4-1 in all applications. V REF FIGURE 4-1: C IN.1 µf (optional) V DD V IN V SS V OUT C L 1 µf to 1 µf Basic Circuit Configuration. As shown in Figure 4-1, the input voltage is connected to the device at the V IN input, with an optional.1 µf ceramic capacitor. This capacitor would be required if the input voltage has excess noise. A.1 µf capacitor would reject input voltage noise at approximately 1 to 2 MHz. Noise below this frequency will be amply rejected by the input voltage rejection of the voltage reference. Noise at frequencies above 2 MHz will be beyond the bandwidth of the voltage reference and, consequently, not transmitted from the input pin through the device to the output. The load capacitance (C L ) is required in order to stabilize the voltage reference; see Section 4.1. Load Capacitor INPUT (BYPASS) CAPACITOR The and voltage references do not require an input capacitor across V IN to V SS. However, for added stability and input voltage transient noise reduction, a.1 µf ceramic capacitor is recommended, as shown in Figure 4-1. This capacitor should be close to the device (within mm of the pin) LOAD CAPACITOR The output capacitor from V OUT to V SS acts as a frequency compensation for the references and cannot be omitted. Use load capacitors between 1 µf and 1 µf to compensate these devices. A 1 µf output capacitor has slightly better noise, and provides additional charge for fast load transients, when compared to a 1 µf output capacitor. This capacitor should be close to the device (within mm of the pin) PRINTED CIRCUIT BOARD LAYOUT CONSIDERATIONS Mechanical stress due to Printed Circuit Board (PCB) mounting can cause the output voltage to shift from its initial value. Devices in the SOT-2- package are generally more prone to assembly stress than devices in the TO-92 package. To reduce stress-related output voltage shifts, mount the reference on low-stress areas of the PCB (i.e., away from PCB edges, screw holes and large components) OUTPUT FILTERING If the noise at the output of these voltage references is too high for the particular application, it can be easily filtered with an external RC filter and op amp buffer. The op amp s input and output voltage ranges need to include the reference output voltage. V DD R FIL V IN 1 kw V OUT V SS FIGURE 4-2: Filter. Output Noise-Reducing The RC filter values are selected for a desired cutoff frequency: EQUATION 4-1: C L 1 µf C FIL 1µF 1 f C = πR FIL C FIL V DD MCP621 V REF The values that are shown in Figure 4-2 (1 kω and 1 µf) will create a first-order, low-pass filter at the output of the amplifier. The cutoff frequency of this filter is 1.9 Hz, and the attenuation slope is 2 db/decade. The MCP621 amplifier isolates the loading of this lowpass filter from the remainder of the application circuit. This amplifier also provides additional drive, with a faster response time than the voltage reference. 2 Microchip Technology Inc. DS216B-page 9

10 / Typical Application Circuits NEGATIVE VOLTAGE REFERENCE A negative precision voltage reference can be generated by using the or in the configuration shown in Figure A/D CONVERTER REFERENCE The and were carefully designed to provide a voltage reference for Microchip s 1-bit and 12-bit families of ADCs. The circuit shown in Figure 4-4 shows a configured to provide the reference to the MCP21, a 12-bit ADC. V DD =.V R 1 1 kω V IN.1% V OUT V SS C L 1 µf R 2 1 kω.1% C IN.1 µf V IN V OUT V SS C L 1 µf V DD =.V 1 µf V REF MCP66 V SS = -.V V REF =-2.V, V REF = -4.96V, V IN V REF IN+ IN MCP21.1 µf to PICmicro Microcontroller FIGURE 4-: Reference. Negative Voltage In this circuit, the voltage inversion is implemented using the MCP66 and two equal resistors. The voltage at the output of the or voltage reference drives R 1, which is connected to the inverting input of the MCP66 amplifier. Since the non-inverting input of the amplifier is biased to ground, the inverting input will also be close to ground potential. The second 1 kω resistor is placed around the feedback loop of the amplifier. Since the inverting input of the amplifier is high-impedance, the current generated through R 1 will also flow through R 2. As a consequence, the output voltage of the amplifier is equal to -2.V for the and -4.1V for the. FIGURE 4-4: ADC Reference Circuit. DS216B-page 1 2 Microchip Technology Inc.

11 /41. PACKAGING INFORMATION.1 Package Marking Information -Lead TO-92 (Leaded) XXXXXX XXXXXX XXYYWW NNN Example: MCP 12I TO Lead TO-92 (Lead Free) XXXXXX XXXXXX XXXXXX YWWNNN Example: MCP 12I TO^^ e Lead SOT-2- Example: XXNN Note: Device I-Temp Code VANN VBNN Applies to -Lead SOT-2. VA2 Legend: XX...X Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week 1 ) NNN e Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( e ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2 Microchip Technology Inc. DS216B-page 11

12 /41 -Lead Plastic Transistor Outline (TO) (TO-92) E1 D 1 n L 1 2 p B c α A R β Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n Pitch p Bottom to Package Flat A Overall Width E Overall Length D Molded Package Radius R Tip to Seating Plane L Lead Thickness c Lead Width B Mold Draft Angle Top α Mold Draft Angle Bottom β *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed.1 (.24mm) per side. JEDEC Equivalent: TO-92 Drawing No. C4-11 DS216B-page 12 2 Microchip Technology Inc.

13 /41 -Lead Plastic Small Outline Transistor (TT) (SOT2) E E1 2 B n p p1 D 1 α c A A2 φ A1 β L Units Dimension Limits Number of Pins n Pitch p Outside lead pitch (basic) p1 Overall Height A Molded Package Thickness A2 Standoff A1 Overall Width E Molded Package Width E1 Overall Length D Foot Length L Foot Angle φ Lead Thickness c Lead Width B Mold Draft Angle Top α Mold Draft Angle Bottom β * Controlling Parameter Significant Characteristic MIN INCHES* NOM MAX MILLIMETERS MIN NOM Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed.1 (.24mm) per side. JEDEC Equivalent: TO-26 Drawing No. C4-14 MAX Microchip Technology Inc. DS216B-page 1

14 /41 NOTES: DS216B-page 14 2 Microchip Technology Inc.

15 /41 APPENDIX A: REVISION HISTORY Revision B (February 2) The following is the list of modifications: 1. Added bandwidth and capacitor specifications (Section 1. Electrical Characteristics ). 2. Moved Section 1.1 Specification Descriptions and Test Circuits to the specifications section (Section 1. Electrical Characteristics ).. Corrected plots in Section 2. Typical Performance Curves. 4. Added Section. Pin Descriptions.. Corrected package markings in Section. Packaging Information. 6. Added Appendix A: Revision History. Revision A (July 21) Original Release of this Document. 2 Microchip Technology Inc. DS216B-page 1

16 /41 NOTES: DS216B-page 16 2 Microchip Technology Inc.

17 /41 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temperature Range Package Device : = 2.V Voltage Reference : = 4.96 Voltage Reference Temperature Range I = -4 C to +8 C Package TO = TO-92, Plastic Transistor Outline, -Lead TT = SOT2, Plastic Small Outline Transistor, -Lead Examples: a) T-I/TT: Tape and Reel, Industrial Temperature, SOT2 package. b) -I/TO: Industrial Temperature, TO-92 package. c) T-I/TT: Tape and Reel, Industrial Temperature, SOT2 package. d) -I/TO: Industrial Temperature, TO-92 package. 2 Microchip Technology Inc. DS216B-page 17

18 /41 NOTES: DS216B-page 18 2 Microchip Technology Inc.

19 Note the following details of the code protection feature on Microchip devices: Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as unbreakable. Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WAR- RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dspic, KEELOQ, microid, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfpic, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dspicdem, dspicdem.net, dspicworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzylab, In-Circuit Serial Programming, ICSP, ICEPIC, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rflab, rfpicdem, Select Mode, Smart Serial, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. 2, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:22 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2. The Company s quality system processes and procedures are for its PICmicro 8-bit MCUs, KEELOQ code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip s quality system for the design and manufacture of development systems is ISO 91:2 certified. 2 Microchip Technology Inc. DS216B-page 19

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