MIC5528. High Performance 500 ma LDO in Thin and Extra Thin DFN Packages. General Description. Features. Applications.

Transcription

1 High Performance 500 ma LDO in Thin and Extra Thin DFN Packages Features General Description Applications Package Types

2 Typical Application Circuit Functional Block Diagram

3 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Operating Ratings Notice: Notice: Note 1: 2: TABLE 1-1: Electrical Characteristics: ELECTRICAL CHARACTERISTICS bold Parameter Symbol Min. Typ. Max. Units Conditions Enable Input

4 TABLE 1-1: Electrical Characteristics: ELECTRICAL CHARACTERISTICS (CONTINUED) bold Parameter Symbol Min. Typ. Max. Units Conditions Note 1: 2: 125 3: 4:

5 TEMPERATURE SPECIFICATIONS (Note 1) Temperature Ranges Parameters Sym. Min. Typ. Max. Units Conditions Package Thermal Resistances Note 1:

6 2.0 TYPICAL PERFORMANCE CURVES Note: FIGURE 2-1: Ratio. Power Supply Rejection FIGURE 2-4: Voltage. Ground Current vs. Supply FIGURE 2-2: Current. Dropout Voltage vs. Output FIGURE 2-5: Current. Ground Current vs. Load FIGURE 2-3: Temperature. Dropout Voltage vs. FIGURE 2-6: Temperature. Ground Current vs.

7 FIGURE 2-7: Current. Output Voltage vs. Output FIGURE 2-10: Voltage. Current Limit vs. Supply FIGURE 2-8: Voltage. Output Voltage vs. Supply FIGURE 2-11: Output Noise Spectral Density (-3.3YMT). FIGURE 2-9: Temperature. Output Voltage vs. FIGURE 2-12: Enable Turn-On.

8 FIGURE 2-13: Auto-Discharge (No Load). FIGURE 2-16: Ratio. Power Supply Rejection FIGURE 2-14: Line Transient. FIGURE 2-17: Voltage. Ground Current vs. Input FIGURE 2-15: Load Transient. FIGURE 2-18: Current. Ground Current vs. Output

9 FIGURE 2-19: Current. Output Voltage vs. Output FIGURE 2-22: Density. Output Noise Spectral V IN (DC Coupled, 2V/Div) 5.0V FIGURE 2-20: Voltage. Output Voltage vs. Input V IN 0.0V 1.1V V OUT = 1.1V V IN = 0V to 5.0V V OUT 0.0V I OUT = 100 µa V OUT (DC Coupled, 500 mv/div) Time = 10 µs/div FIGURE 2-23: Start-Up from V IN. 2.5V V EN (DC Coupled, 1V/Div) V EN 0.0V 1.1V FIGURE 2-21: Voltage. Current Limit vs. Input V OUT = 1.1V 0.0V V IN = 2.5V V OUT I OUT = 100 µa V OUT (DC Coupled, 500 mv/div) Time = 10 µs/div FIGURE 2-24: Start-Up from ENABLE.

10 2.5V V OUT = 1.1V V IN = 2.5V 500 ma V OUT = 1.1V I OUT = 0 V EN 1.1V 0.0V V EN (DC Coupled, 1V/Div) 100 µa I OUT I OUT (DC Coupled, 200 ma/div) V OUT V OUT V OUT (DC Coupled, 500 mv/div) Time = 40 µs/div V OUT (AC Coupled, 100 mv/div) Time = 40 µs/div FIGURE 2-25: Auto-Discharge (No Load). FIGURE 2-28: Load Transient. 3.5V V OUT = 1.1V 500 ma V OUT = 1.1V 2.5V V IN (DC Coupled, 1V/Div) I OUT 1 ma V IN I OUT (DC Coupled, 200 ma/div) V OUT V OUT V OUT (AC Coupled, 10 mv/div) Time = 40 µs/div V OUT (AC Coupled, 100 mv/div) Time = 40 µs/div FIGURE 2-26: Line Transient. FIGURE 2-29: Load Transient. V OUT = 1.1V V OUT = 1.1V 5.5V V IN 2.5V V IN (DC Coupled, 2V/Div) 150 ma 100 µa I OUT I OUT (DC Coupled, 200 ma/div) V OUT V OUT V OUT (AC Coupled, 50 mv/div) V OUT (AC Coupled, 100 mv/div) Time = 40 µs/div Time = 40 µs/div FIGURE 2-27: Line Transient. FIGURE 2-30: Load Transient.

11 V OUT = 1.1V 150 ma I 1 ma OUT I OUT (DC Coupled, 200 ma/div) V OUT V OUT (AC Coupled, 100 mv/div) Time = 40 µs/div FIGURE 2-31: Load Transient.

12 3.0 PIN DESCRIPTIONS TABLE 3-1: PIN FUNCTION TABLE Pin Number Pin Name Description

13 4.0 APPLICATION INFORMATION 4.4 Enable/Shutdown 4.1 Input Capacitor 4.5 Thermal Considerations 4.2 Output Capacitor EQUATION 4-1: P D = V IN V OUT I OUT + V IN I GND EQUATION 4-2: P D = 3.6V 3.3V 500mA = 0.150W 4.3 No-Load Stability

14 EQUATION 4-3: T JMAX T A P DMAX = JA EQUATION 4-4: 0.15W = 125 C T A 173 C/W T A = 99 C

15 5.0 PACKAGING INFORMATION 5.1 Package Marking Information Legend: * Note

16 6-Lead Thin DFN 1.2 mm x 1.2 mm Package Outline and Recommended Land Pattern

17 6-Lead Extra Thin DFN 1.2 mm x 1.2 mm Package Outline and Recommended Land Pattern

18 NOTES:

19 APPENDIX A: REVISION HISTORY Revision A (March 2018)

20 NOTES:

21 PRODUCT IDENTIFICATION SYSTEM Device -X.X X XX -XX Examples: Device: Output Voltage: Junction Temperature Range: Package: Media Type: Note: Note 1:

22 NOTES:

23 Note the following details of the code protection feature on Microchip devices: Trademarks. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company s quality system processes and procedures are for its PIC MCUs and dspic DSCs, KEELOQ code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.

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25 SYST-29SMQU307 - Data Sheet - - High-Performance 500mA LDO in Thin and Extra Thin DFN P Affected Catalog Part Numbers(CPN) -2.8YMX-T5-2.8YMX-TR -3.3YMT-T5-3.3YMT-TR -3.3YMX-T5-3.3YMX-TR

26 Package