AME. Voltage Detector AME8550. n General Description. n Functional Block Diagram. n Features. n Applications

Transcription

1 n General Description The series are highly precise, low power consumption voltage detectors, manufactured using CMOS and fuse trimming technologies. Detect voltage is extremely accurate with minimal temperature drift. n Functional Block Diagram (1) CMOS Output without Delay Both CMOS and N channel open drain output configurations are available. Vref V OUT GND BG n Features l Highly Accurate: ± 2% l Low Power Consumption: TYP.8µA ( =1.5V) l Detect Voltage Range: 1.6V to 4.6V in.1v Increments l Operating Voltage Range: 1.2V to 6.5V l Detect Voltage Temperature Characteristice: TYP ± 1ppm/ O C l Output Configuration: N-channel Open Drain or CMOS l Ultra Small Package: SOT-23 (15mW) SOT-25 (15mW) SOT-89 (5mW) SC-7 (1mW) l Add an External Capacitor or Perform an µp Preset. l Green Product Meet RoHS Standards (2) Nch Open Drain Output without Delay V OUT GND Vref BG (3) CMOS Output with Delay VIN VOUT VIN GND I V TH =V REF CD Vref BG n Applications (4) Nch Open Drain Output with Delay l Microprocessor Reset Circuitry V OUT l Memory Battery Back-up Circuits l Power-on Reset Circuits l Power Failure Detection I GND l System Battery Life and Charge Voltage Monitors V TH =V REF CD Vref BG 1

2 n Pin Configuration l Without Delay Time SOT-23 Top View AEETXXXX 1. OUT 2. GND 3. IN * Die Attach: Non-Conductive Epoxy SOT-89 Top View AEFTXXXX 1. OUT 2. IN(TAB) 3. GND * Die Attach: Non-Conductive Epoxy SOT-25 Top View SC-7-4 Top View CEEVXXXX 1. OUT 2. IN 3. GND 4. NC 5. NC * Die Attach: AEIUXXXX 1. OUT 2. IN 3. NC 4. GND * Die Attach: Non-Conductive Epoxy Non-Conductive Epoxy l With Delay Time SOT-25 Top View AEEVXXXX 1. OUT 2. IN 3. GND 4. CD 5. NC * Die Attach: Non-Conductive Epoxy SOT-25 Top View BEEVXXXX 1. OUT 2. IN 3. GND 4. NC 5. CD * Die Attach: Non-Conductive Epoxy 2

3 n Ordering Information l Without Delay Time x x x x x xxx x Special Feature Detect Voltage Output Options Number of Pins Package Type Operating Ambient Temperature Range Pin Configuration Pin Configuration Operating Ambient Temperature Range Package Type Number of Pins Output Options Detect Voltage Special Feature A 1. OUT E:-4 O C to +85 O C E:SOT-2X T: 3 A: CMOS output 18: V=1.8V Z: Lead free (SOT-23) 2. GND F: SOT-89 V: 5 without delay 19: V=1.9V 3. IN I: SC-7 U: 4 2: V=2.V B: Open-Drain 21: V=2.1V A 1. OUT without delay 22: V=2.2V (SOT-89) 2. IN 23: V=2.3V 3. GND 24: V=2.4V 25: V=2.5V A 1.OUT 26: V=2.6V (SC-7-4) 2.IN 27: V=2.7V 3.NC 28: V=2.8V 4GND 29: V=2.9V 3: V=3.V C 1. OUT 33: V=3.3V (SOT-25) 2. IN 34: V=3.4V 3. GND 36: V=3.6V 4. NC 39: V=3.9V 5. NC 42: V=4.2V 44: V=4.4V 46: V=4.6V 3

4 n Ordering Information l With Delay Time x x x x x xxx x Special Feature Detect Voltage Output Options Number of Pins Package Type Operating Ambient Temperature Range Pin Configuration Pin Configuration Operating Ambient Temperature Range Package Type Number of Pins Output Options Detect Voltage Special Feature A 1. OUT E:-4 O C to +85 O C E:SOT-2X V: 5 C: CMOS output 18: V=1.8V Z: Lead free (SOT-25) 2. IN I: SC-7 with delay 19: V=1.9V 3. GND 2: V=2.V 4. CD D: Open-Drain 21: V=2.1V 5. NC output 22: V=2.2V with delay 23: V=2.3V B 1. OUT 24: V=2.4V (SOT-25) 2. IN 25: V=2.5V 3. GND 26: V=2.6V 4. NC 27: V=2.7V 5. CD 28: V=2.8V 29: V=2.9V 3: V=3.V 34: V=3.4V 36: V=3.6V 37: V=3.7V 42: V=4.2V 44: V=4.4V 46: V=4.6V 4

5 n Pin Description Pin Name Pin Description IN GND OUT NC CD Supply Voltage Input Ground Output No Connection Connect an external capacitor when delay function is needed 5

6 n Ordering Information Part Number Marking Detect Voltage Package Operating Ambient Temperature Range AEETA18Z CMEww 1.8V SOT-23-4 o C to +85 o C AEEVC19Z AXOww 1.9V SOT-25-4 o C to +85 o C AEEVD19Z AZKww 1.9V SOT-25-4 o C to +85 o C BEEVC19Z AXPww 1.9V SOT-25-4 o C to +85 o C BEEVD19Z AZFww 1.9V SOT-25-4 o C to +85 o C AEETB18Z BZZww 1.8V SOT-23-4 o C to +85 o C AEETB21Z AXQww 2.1V SOT-23-4 o C to +85 o C AEFTB21Z B21ww 2.1V SOT-89-4 o C to +85 o C BEEVC21Z BCNww 2.1V SOT-25-4 o C to +85 o C CEEVB21Z AXRww 2.1V SOT-25-4 o C to +85 o C AEETA22Z AWHww 2.2V SOT-23-4 o C to +85 o C AEFTA22Z A22ww 2.2V SOT-89-4 o C to +85 o C AEETB22Z AWUww 2.2V SOT-23-4 o C to +85 o C AEFTB22Z B22ww 2.2V SOT-89-4 o C to +85 o C CEEVB22Z AXSww 2.2V SOT-25-4 o C to +85 o C AEEVD23Z AYTww 2.3V SOT-25-4 o C to +85 o C BEEVD23Z AYUww 2.3V SOT-25-4 o C to +85 o C AEETA24Z AXTww 2.4V SOT-23-4 o C to +85 o C AEFTA24Z A24ww 2.4V SOT-89-4 o C to +85 o C CEEVA24Z AXUww 2.4V SOT-25-4 o C to +85 o C AEETB24Z AXVww 2.4V SOT-23-4 o C to +85 o C AEFTB24Z B24ww 2.4V SOT-89-4 o C to +85 o C Note: ww represents the date code / w represents date code ( A thru Z ) : 2 work weeks per character and please refer to Date Cole Rule on Package Dimension. * A line on top of the first letter represents lead free plating such as CMEww. Please consult AME sales office or authorized Rep./Distributor for the availability of output voltage and package type. 6

7 n Ordering Information (Contd.) Part Number Marking Detect Voltage Package Operating Ambient Temperature Range CEEVB24Z AXWww 2.4V SOT-25-4 o C to +85 o C AEEVD24Z AXXww 2.4V SOT-25-4 o C to +85 o C BEEVD24Z AXYww 2.4V SOT-25-4 o C to +85 o C AEETB25Z AXZww 2.5V SOT-23-4 o C to +85 o C AEFTB25Z B25ww 2.5V SOT-89-4 o C to +85 o C CEEVB25Z AYAww 2.5V SOT-25-4 o C to +85 o C AEEVD26Z AYVww 2.6V SOT-25-4 o C to +85 o C BEEVD26Z AYWww 2.6V SOT-25-4 o C to +85 o C AEETA27Z AWIww 2.7V SOT-23-4 o C to +85 o C AEFTA27Z A27ww 2.7V SOT-89-4 o C to +85 o C AEETB27Z AWVww 2.7V SOT-23-4 o C to +85 o C AEFTB27Z B27ww 2.7V SOT-89-4 o C to +85 o C CEEVB27Z AYSww 2.7V SOT-25-4 o C to +85 o C AEEVD27Z AYXww 2.7V SOT-25-4 o C to +85 o C BEEVD27Z AYYww 2.7V SOT-25-4 o C to +85 o C BEEVC27Z BLRww 2.7V SOT-25-4 o C to +85 o C AEETB28Z AYBww 2.8V SOT-23-4 o C to +85 o C AEFTB28Z B28ww 2.8V SOT-89-4 o C to +85 o C CEEVB28Z AYCww 2.8V SOT-25-4 o C to +85 o C AEEVC29Z AYDww 2.9V SOT-25-4 o C to +85 o C BEEVC29Z AYEww 2.9V SOT-25-4 o C to +85 o C AEETA3Z AYFww 3.V SOT-23-4 o C to +85 o C AEFTA3Z A3ww 3.V SOT-89-4 o C to +85 o C CEEVA3Z AYGww 3.V SOT-25-4 o C to +85 o C 7

8 n Ordering Information (Contd.) Part Number Marking Detect Voltage Package Operating Ambient Temperature Range AEETB34Z AYHww 3.4V SOT-23-4 o C to +85 o C AEFTB34Z B34ww 3.4V SOT-89-4 o C to +85 o C CEEVB34Z AYIww 3.4V SOT-25-4 o C to +85 o C AEEVD36Z AYJww 3.6V SOT-25-4 o C to +85 o C BEEVD36Z AYKww 3.6V SOT-25-4 o C to +85 o C AEIUA39Z BLMw 3.9V SC o C to +85 o C BEEVD42Z AZXww 4.2V SOT-25-4 o C to +85 o C AEFTB44Z B44ww 4.4V SOT-89-4 o C to +85 o C AEETB44Z AYLww 4.4V SOT-23-4 o C to +85 o C CEEVB44Z AYMww 4.4V SOT-25-4 o C to +85 o C AEEVC46Z AYNww 4.6V SOT-25-4 o C to +85 o C BEEVC46Z AYOww 4.6V SOT-25-4 o C to +85 o C CEEVB3Z BEAww 3.V SOT-25-4 o C to +85 o C AEETA39Z BDKww 3.9V SOT-23-4 o C to +85 o C AEETA34Z BIZww 3.4V SOT-23-4 o C to +85 o C BEEVC24Z BDHww 2.4V SOT-25-4 o C to +85 o C CEEVB27Z AYSww 2.7V SOT-25-4 o C to +85 o C BEEVD28Z BKOww 2.8V SOT-25-4 o C to +85 o C CEEVA27Z BKUww 2.7V SOT-25-4 o C to +85 o C BEEVD37Z BTTww 3.7V SOT-25-4 o C to +85 o C AEIUA27Z BVMw 2.7V SC o C to +85 o C AEETB33Z BDMww 3.3V SOT-23-4 o C to +85 o C AEETA33Z CAAww 3.3V SOT-23-4 o C to +85 o C BEEVD25Z CCXww 2.5V SOT-25-4 o C to +85 o C AEIUB2Z CCYw 2.V SC o C to +85 o C AEIUB26Z CCZw 2.6V SC o C to +85 o C 8

9 n Ordering Information (Contd.) Part Number Marking Detect Voltage Package Operating Ambient Temperature Range AEIUB27Z CDAw 2.7V SC o C to +85 o C AEIUB3Z CHEw 3.V SC o C to +85 o C AEFTA23Z A23ww 2.3V SOT-89-4 o C to +85 o C BEEVD21Z CGRww 2.1V SOT-25-4 o C to +85 o C 9

10 n Absolute Maximum Ratings Parameter Symbol Maximum Unit Input Voltage Output Current 7 V I OUT 5 ma Output Voltage CMOS GND -.3 to +.3 V OUT Nch open drain GND -.3 to 7 V ESD Classification HBM 2 kv MM 2 V n Recommed Operating Condition Parameter Symbol Maximum Unit Ambient Temperature Range T A -4 to +85 Junction Temperature Range T J - 4 to +125 o C Storage Temperature Range T STG - 65 to +15 n Thermal Information Parameter Package Die Attach Symbol Maximum Unit Thermal Resistance (Junction to Case) Thermal Resistance (Junction to Ambient) Internal Power Dissipation SOT-23* 14 θ JC SOT-25* 14 SOT-89** 46 SOT SOT-25 Non-Conductive Epoxy θ JA 28 SOT SOT-23 4 SOT-25 4 SOT P D o C/W mw 1 Maximum Junction Temperature Solder Iron (1 Sec)*** * Measure θ JC on backside center of tab. ** Measure θ JC on center of molding compound if IC has no tab. *** MIL-STD-22G 21F 15 o C 35 o C

11 n Electrical Specifications T A = 25 O C, V DF (T)=1.6 to 6.V + 2% Parameter Symbol Test Condition Min Typ Max Units Detect Voltage V DF V DF x.98 V DF V DF x1.2 Hysteresis Range V HYS / V DF 2 8 % 1.5 < < <= < V Supply Current I SS =V DF +.5V 3. <= < µa 4. <= <= < <= Operating Voltage V DF (T)=1.6V to 6.V V Nch 1. < < <= < Output Current I OUT =V DF x.95 V DS =.5V 3. <= < <= <= ma 5. < <= Pch V DS =2.1V =7V (with CMOS output) Temperature Characteristics Propagation Time (V DR --> V OUT inversion) V DF -4 o C<= T ±1 ppm/ o A <= +85 o C C T A.V DF tdly.2 ms Note: V DF (T) : Established Detect Voltage Value Release Voltage : V DR = V DF + V HYS 11

12 n Functional Description (CMOS output without delay) 1. When input voltage ( ) rises above detect voltage (V DF ), output voltage (V OUT ) will be equal to. ( A condition of high impedance exists with Nch open drain output configurations. ) 2. When input voltage ( ) falls below detect voltage (V DF ), output voltage (V OUT ) will be equal to the ground voltage (GND) level. 3. When input voltage ( ) falls to a level below that of the minimum operating voltage (V MIN ), output will become unstable. In this condition, will equal the pulled-up output ( should output be pulled-up.). 4. When input voltage ( ) rises above the ground voltage (GND) level, output will be unstable at levels below the minimum operating voltage (V MIN ). Between the V MIN and detect release voltage (V DR ) levels, theground voltage (GND) level will be maintained. 5. When input voltage ( ) rises above detect release voltage (V DR ), output voltage (V OUT ) will be equal to. ( A condition of high impedance exists with Nch open drain output configurations. ) 6. The difference between V DR and V DF represents the hysteresis range. n Functional Description (CMOS output with delay) 1. When input voltage ( ) rises above detect voltage (V DF ), output voltage (V OUT ) will be equal to. ( A condition of high impedance exists with Nch open drain output configurations. ) 2. When input voltage ( ) falls below detect voltage (V DF ), output voltage (V OUT ) will be equal to the ground voltage (GND) level. 3. When input voltage ( ) falls to a level below that of the minimum operating voltage (V MIN ), output will become unstable. In this condition, will equal the pulled-up output ( should output be pulled-up.) 4. When input voltage ( ) rises above the ground voltage (GND) level, output will be unstable at levels below the minimum operating voltage (V MIN ). Between the V MIN and detect release voltage (V DR ) levels, theground voltage (GND) level will be maintained. 5. When input voltage ( ) rises above detect release voltage (V DR ), output voltage (V OUT ) will be equal to after T D delay time. Q = V x C = I x T D VxC T= (V=V REF ) I V REF * 1nF For Example, T D =, where V REF =1.2V (typ.) 75nA ( A condition of high impedance exists with Nch open drain output configurations. ) 6. The difference between V DR and V DF represents the hysteresis range. n Timing Chart n Timing Chart 6 Input Voltage ( ) Detect Release Voltage (V DR ) Detect Voltage (V DF ) 6 Input Voltage ( ) Detect Release Voltage (V DR ) Detect Voltage (V DF ) Min. Operating Voltage (V MIN ) Ground Voltage (GND) Min. Operating Voltage (V MIN ) Ground Voltage (GND) Output Voltage (V OUT ) Output Voltage (V OUT ) T D Ground Voltage (GND) Ground Voltage (GND)

13 n Notes on Use 1. When a resistor is connected between the pin and the input with CMOS output configurations, oscillation may occur as a result of voltage drops at R IN if load current (I OUT ) exists. ( refer to 5 - (1) below ) 2. When a resistor is connected between the pin and the input with CMOS output configurations, irrespective of Nch output configurations, oscillation may occur as a result of through current at the time of voltage release even if load current (I OUT ) does not exist.( refer to 5 - (1)(2) below ) 3. With a resistor connected between the pin and the input, detect and release voltage will rise as a result of the IC s supply current flowing through the pin. (2) Oscillation as a result of through current Since the series are CMOS IC S, through current will flow when the IC s internal circuit switching operates(during release and detect operations ).Consequently, oscillation is liable to occur as a result of drops in voltage at the through current s resistor (R IN ) during release voltage operations. ( refer to diagram 2 ) Since hysteresis exists during detect operations, oscillation is unlikely to occur. Input 4. In order to stabilise the IC s operations, please ensure that pin s input frequency s rise and fall times are more than several µ sec / V. R IN xi OUT voltage drop R IN V OUT I OUT 5. Oscillation GND (1) Output current oscillation with the CMOS output configuration When the voltage applied at IN rises, release operations commence and the detector s output voltage increases. Load current (I OUT ) will flow at R L. Because a voltage drop ( R IN x I OUT ) is produced at the R IN resistor, located between the input (IN) and the pin, the load current will flow via the IC s pin. The voltage drop will also lead to a fall in the voltage level at the pin. When the pin voltage level falls below the detect voltage level, detect operations will commence. Following detect operations, load current flow will cease and since voltage drop at R IN will disappear, the voltage level at the pin will rise and release operations will begin over again. Oscillation may occur with this release - detect - release repetition. Further, this condition will also appear via means of a similar mechanism during detect operations. R IN xi SS * voltage drop Input R IN Diagram1 Diagram2 GND V OUT Iss* (includes through current) 13

14 n Characterization Curve -1.9V -1.9V NMOS Sinking Current (ua) =.8V =.7V NMOS Sinking Current (ma) VDS (V) VDS (V) -2.7V AEETA27 NMOS Sinking Current (ua) NMOS Sinking Current (ma) =1.V =1.5V =2.5V =2.V VDS (V) VDS (V) -4.6V -4.6V =.8V 5 45 =4.V NMOS Sinking Current (ua) =.7V NMOS Sinking Current (ma) =3.5V =3.V =2.5V =2.V =1.5V VDS (V) VDS (V)

15 n Characterization Curve (Contd.) PMOS Sourcing Current (ma) V VDS=2.1V VDS=1.5V VDS=1.V VDS=.5V NMOS Sinking Current (ma) V Input Voltage (V) Input Voltage (V) AEETA27-2.7V 16 9 PMOS Sourcing Current (ma) VDS=.5V Input Voltage (V) -4.6V VDS=1.5V VDS=1.V VDS=2.1V NMOS Sinking Current (ma) Input Voltage (V) -4.6V NMOS Sinking Current (ma) Input Voltage (V) PMOS Sourcing Current (ma) Input Voltage (V) VDS=2.1V VDS=1.5V VDS=1.V VDS=.5V 15

16 n Characterization Curve (Contd.) Supply Current vs. Input Voltage (2.7V) 3. Output Voltage vs. Input Voltage (2.2V) Supply Current (ua) Output Voltage (V) down up Input voltage (V) Input Voltage (V) Output Voltage vs. Input Voltage (2.7V) Output Voltage (V) down up Input Voltage (V) 16

17 n Date Code Rule Marking Date Code Year A A A W W xxx A A A W W xxx1 A A A W W xxx2 A A A W W xxx3 A A A W W xxx4 A A A W W xxx5 A A A W W xxx6 A A A W W xxx7 A A A W W xxx8 A A A W W xxx9 For SC-7 Package Only Marking Date Code Year w: Work Week Code A A A W xxx A: 1&2 K: 21&22 U: 41&42 A A A W xxx1 B: 3&4 L: 23&24 V: 43&44 A A A W xxx2 C: 5&6 M: 25&26 W: 45&46 A A A W xxx3 D: 7&8 N: 27&28 X: 47&48 A A A W xxx4 E: 9&1 O: 29&3 Y: 49&5 A A A W xxx5 F: 11&12 P: 31&32 Z: 51&52 A A A W xxx6 G: 13&14 Q: 33&34 A A A W xxx7 H: 15&16 R: 35&36 A A A W xxx8 I: 17&18 S: 37&38 A A A W xxx9 J: 19&2 T: 39&4 17

18 n Tape and Reel Dimension SOT-23 P W AME AME PIN 1 P Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Pitch (P) Part Per Full Reel Reel Size SOT-23 8.±.1 mm 4.±.1 mm 4.±.1 mm 3pcs 18±1 mm SOT-25 P W AME AME PIN 1 P Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Pitch (P) Part Per Full Reel Reel Size SOT-25 8.±.1 mm 4.±.1 mm 4.±.1 mm 3pcs 18±1 mm 18

19 n Tape and Reel Dimension (Contd.) SC-7-4 P W AME AME PIN 1 P Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Pitch (P) Part Per Full Reel Reel Size SC ±.1 mm 4.±.1 mm 4.±.1 mm 3pcs 18±1 mm SOT-89 P W AME AME PIN 1 P Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Pitch (P) Part Per Full Reel Reel Size SOT ±.1 mm 8.±.1 mm 4.±.1 mm 1pcs 18±1 mm 19

20 n Package Dimension SOT-23 Top View Side View D SYMBOLS MILLIMETERS INCHES MIN MAX MIN MAX E H A A e L b D E Front View e 1.9 BSC.748 BSC H L.35BSC.138 BSC b θ1 o 1 o o 1 o SOT-25 Top View Side View D H E PIN 1 S1 e L Front View A A A1 b A1 2

21 n Package Dimension (Contd.) SOT-89 Top View D D1 e H E A1 3' Side View 1' C SYMBOLS MILLIMETERS INCHES MIN MAX MIN MAX A A 1.8 REF.315 REF C D D E2 Bottom View D2 MATTE FINISH Front View I A POLISH E I e H S1 3. REF.7 REF 1.5 REF.1181 REF.276 REF.591 REF E D S1 21

22 n Package Dimension (Contd.) SC-7-4 Top View D e1 e L Side View θ SYMBOLS MILLIMETERS INCHES MIN MAX MIN MAX A A A b PIN 1 d b Front View b1 E1 A2 L1 c.2 E A1 A b c d.5 TYP.2 TYP D E E e.65 TYP.26TYP e L.525 REF.21 REF L o 8 o o 8 o 22

23 Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. AME, Inc., October 216 Document: 251-DS855-I.8 Corporate Headquarter AME, Inc. 8F, 12, WenHu St., Nei Hu Taipei, Taiwan. 114 Tel: Fax: