VDD Series. AnaSem. Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector with Delay circuit. Analog Semiconductor IC.

Size: px

Start display at page:

Download "VDD Series. AnaSem. Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector with Delay circuit. Analog Semiconductor IC."

Carmella Charleen Wells
5 years ago
Views:

1 安纳森 Analog Semiconductor IC Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector with Delay circuit (IMPORTANT: Please check the last page for Genuine Product Labeling) Rev. E13-1 Website: Tel:

Rev. E13-1 Products Data Sheet Analog Semiconductor IC GENERAL DESCRIPTIONS The VDD series

accuracy that the temperature coefficient is controlled.

Because the delay circuit is built-in, delay time can be set without any external components.

1v) Detection voltage range.7v~6.v Operating voltage range ±1% (=1.8V~6.

V) Detection voltage temperature characteristics S/1~5ms, M/5~2ms, L/8~4ms Delay time CMOS or

2 Rev. E13-1 Products Data Sheet Analog Semiconductor IC GENERAL DESCRIPTIONS The VDD series are delay circuit built-in voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in high accuracy by using the laser trimming technology. Because the delay circuit is built-in, delay time can be set without any external components. HALOGEN RoHS COMPLIANCE FEATURES 1.8V~6.V (selectable with a step of.1v) Detection voltage range.7v~6.v Operating voltage range ±1% (=1.8V~6.V) High accuracy detection voltage Typ. ±2ppm/ C (=1.8V~6.V) Detection voltage temperature characteristics S/1~5ms, M/5~2ms, L/8~4ms Delay time CMOS or N-channel open drain Output types Typ..6µA (=V) Low current consumption 4 C ~ +85 C Operating temperature range SOT-23 ( mm) Small package APPLICATIONS Reset of microprocessor Power-on reset of system Charge detection of battery Battery back-up of memory Monitoring of battery life time Delay circuit 1

3 Rev. E13-1 PRODUCTS NUMBERING GUIDE VDD Design version Package form Output type Delay time A : TOPR = 4 C ~ +85 C T : SOT-23 C : CMOS output N : N-channel open drain output S : 1msec~5msec M : 5msec~2msec L : 8msec~4msec Detection accuracy rate 1 : ±1% Detection voltage 18 ~ 6 : Selectable with a step of.1v in the range of 1.8V ~ 6.V e.g.) 18 : 1.8V 3 : 3.V PIN CONFIGURATION / MARKING SPECIFICATION (SOT-23) Vin 3 A B C D E F F F F 1 2 Vout Vss (Top view) Pin Configuration No. Symbol Descriptions 1 VOUT Output 2 VSS Power ground 3 Voltage input Marking Specification Code Mark Contents A C or N Output type BC 18~6 Detection voltage D S, M or L Delay time E A Version F Internal rule Lot number 2

4 Rev. E13-1 TYPICAL APPLICATION CIRCUITS CMOS output N-channel open drain output VOUT 1KΩ VOUT VSS VSS BLOCK DIAGRAM CMOS output N-channel open drain output Voltage Reference + _ Delay circuit VOUT Voltage Reference + _ Delay circuit VOUT Vss Vss ABSOLUTE MAXIMUM RATINGS Items Symbol Ratings Unit Input voltage range.3 ~ +7. V Output current IOUT 5 ma Output voltage range VOUT VSS.3 ~ +.3 V Power dissipation 1) SOT-23 PD 4 mw Operating temperature range TOPR 4 ~ +85 C Storage temperature range TSTG 55 ~ +125 C Note : 1) Power dissipation depends on conditions of mounting on boards. PCB dimension is 5mm 5mm 1.6mm. 3

5 Rev. E13-1 ELECTRICAL CHARACTERISTICS ( unless otherwise specified) Items Symbol Conditions Min. Typ. Max. Unit Operating voltage = 1.8V ~ 6.V.7-6. V 1 Test circuit Detection voltage = 1.8V ~ 6.V Ta = 4 C ~ +85 C V 1 Hysteresis range VHYS V 1 =.7V ma =1.V ma Output current IOUT N-ch VDS=.5V =2.V ma =3.V ma =4.V ma 3 =5.V ma CMOS P-ch VDS=2.1V CMOS N-ch VDS=2.1V =6.V ma 4 =6.V ma 3 =V µa =2.V -.7 µa Current consumption ISS =3.V µa 2 =4.V µa =5.V µa Leak current ILEAK =6.V VOUT=6.V na 3 Detection voltage temperature coefficient / Ta = 1.8V ~ 6.V Ta = 4 C ~ +85 C - ±2 - ppm/ C ms Delay time VREL VOUT inversion TDLY =.7V ~ 6.V 5-2 ms ms 4

6 Rev. E13-1 TEST CIRCUITS Circuit (1) Operating voltage, Detection voltage, Hysteresis range, Detection voltage temperature coefficient R 1KΩ *1) V VOUT VSS V Note 1) : The resistor (1KΩ) is not necessary for CMOS output products. Circuit (2) Current consumption Circuit (3) N-ch driver output current A VOUT VOUT A VSS VSS VDS Circuit (4) P-ch driver output current Circuit (5) Delay time (VREL VOUT inversion) VDS R 1KΩ *1) VSS VOUT A VSS VOUT Measurement of wave form Note 1) : The resistor (1KΩ) is not necessary for CMOS output products. 5

7 Rev. E13-1 DESCRIPTION OF OPERATION General operation (CMOS Output) In reference to following the block diagram of CMOS output VDD series ; Voltage Reference + _ Delay Circuit P-ch VOUT N-ch Vss A. When the input voltage () is higher than the release voltage (VREL), the input voltage () is provided at the output terminal because N-ch transistor is OFF and the P-ch transistor is ON. And, the output maintains the same level of input as long as the input voltage remains above the detection voltage (). B. When the input voltage () falls below the detection voltage (), the N-ch transistor is ON and the P-ch transistor is OFF. And, the output voltage (VOUT) is same as ground level (VSS). C. When the input voltage () falls below the min. operating voltage, the output becomes unstable, or goes to when the output is pulled up to. D. When the input voltage () rises above the minimum voltage, the ground voltage (VSS) level is maintained even though the input voltage () rises above the detection voltage () as long as it does not exceed the release voltage (VREL) level. E. Following delay time, the N-ch transistor becomes OFF when the input voltage () rises above the release voltage (VREL), and the P-Ch transistor becomes ON. And, the output voltage (VOUT) is equal to input voltage (). This difference between and VREL is hysteresis range (VHYS). [ TIMING CHART ] Input voltage () Release voltage (VREL) Detection voltage () Min. operating voltage Power ground (VSS) Output voltage (VOUT) Release voltage (VREL) Detection voltage () Hysteresis range (VHYS) Delay time (TDLY) Min. operating voltage Power ground (VSS) A B C D E 6

8 Rev. E13-1 TYPICAL CHARACTERISTICS Supply Current vs. Input Voltage VDD181SCTA (CMOS 1.8V) VDD251SCTA (CMOS V) 3. =V~6.V, Step=.2V 3. =V~6.V, Step=.2V Supply Current : IDD (µa) Ta=-4 C Supply Current : IDD (µa) Ta=-4 C VDD351SCTA (CMOS 3.5V) VDD451SCTA (CMOS 4.5V) 3. =V~6.V, Step=.2V 3. =V~6.V, Step=.2V Supply Current : IDD (µa) Ta=-4 C Supply Current : IDD (µa) Ta=-4 C

9 Rev. E13-1 TYPICAL CHARACTERISTICS Detect & Release Voltage vs. Ambient Temperature VDD181SCTA (CMOS 1.8V) VDD251SCTA (CMOS V) Detect & Release Voltage : & VREL (V) =V~6.V, Step=1 C Release Voltage Detect Voltage Ambient Temperature : Ta ( C) Detect & Release Voltage : & VREL (V) =V~6.V, Step=1 C Release Voltage Detect Voltage Ambient Temperature : Ta ( C) VDD351SCTA (CMOS 3.5V) VDD451SCTA (CMOS 4.5V) Detect & Release Voltage : & VREL (V) =V~6.V, Step=1 C Release Voltage Detect Voltage Ambient Temperature : Ta ( C) Detect & Release Voltage : & VREL (V) =V~6.V, Step=1 C Release Voltage Detect Voltage Ambient Temperature : Ta ( C) 8

10 Rev. E13-1 TYPICAL CHARACTERISTICS Output Voltage vs. Input Voltage VDD181SCTA (CMOS 1.8V) VDD251SCTA (CMOS V) Output Voltage : VOUT (V) VREL Output Voltage : VOUT (V) VREL VDD351SCTA (CMOS 3.5V) VDD451SCTA (CMOS 4.5V) Output Voltage : VOUT (V) VREL Output Voltage : VOUT (V) VREL

11 Rev. E13-1 TYPICAL CHARACTERISTICS N-ch Driver Output Current vs. VDS VDD181SCTA (CMOS 1.8V) VDD251SCTA (CMOS V) =.8V =.7V =.8V =V =.7V =1.V VDS (V) VDS (V) VDD351SCTA (CMOS 3.5V) VDD451MCTA (CMOS 4.5V) =.8V =.7V VDS (V) =.8V =.7V VDS (V) 1

12 Rev. E13-1 TYPICAL CHARACTERISTICS N-ch Driver Output Current vs. VDS (continued) VDD181SCTA (CMOS 1.8V) VDD251SCTA (CMOS V) =V =1.V VDS (V) =V =1.V 1. VDS (V) =2.V 2. VDD351SCTA (CMOS 3.5V) VDD451MCTA (CMOS 4.5V) =3.V 3. =V =2.V =V 5. =1.V VDS (V) =V =2.V =V VDS (V) =3.V =3.5V =4.V

13 Rev. E13-1 TYPICAL CHARACTERISTICS N-ch Driver Output Current vs. Input Voltage VDD181SCTA (CMOS 1.8V) VDD251SCTA (CMOS V) Ta= 4 C VDS=.5V, =~VREL, Step=.2V Ta= 4 C VDS=.5V, =~VREL, Step=.2V VDD351SCTA (CMOS 3.5V) VDD451SCTA (CMOS 4.5V) Ta= 4 C VDS=.5V, =~VREL, Step=.2V Ta= 4 C VDS=.5V, =~VREL, Step=.2V

14 Rev. E13-1 TYPICAL CHARACTERISTICS P-ch Driver Output Current vs. Input Voltage VDD181SCTA (CMOS 1.8V) VDS=2.1V VDS=V VDS=1.V VDS=.5V VDD251SCTA (CMOS V) VDS=2.1V VDS=V VDS=1.V VDS=.5V VDD351SCTA (CMOS 3.5V) VDS=2.1V VDS=V VDS=1.V VDS=.5V

15 Rev. E13-1 TYPICAL CHARACTERISTICS Delay Time vs. Ambient Temperature VDD221MCTA (CMOS 2.2V) VDD271MCTA (CMOS 2.7V) 2 =V~6.V, Step=1 C 2 =V~6.V, Step=1 C Delay Time : TDLY (msec) =6.V =5.4V Ambient Temperature : Ta ( C) Delay Time : TDLY (msec) =6.V =5.4V Ambient Temperature : Ta ( C) VDD271SNTA (N-ch 2.7V) VDD31MCTA (CMOS 3.V) 5 =V~6.V, Step=1 C 2 =V~6.V, Step=1 C Delay Time : TDLY (msec) =6.V =5.4V Ambient Temperature : Ta ( C) Delay Time : TDLY (msec) =6.V =5.4V Ambient Temperature : Ta ( C) 14

16 Rev. E13-1 TYPICAL CHARACTERISTICS Delay Time vs. Input Voltage VDD221MCTA (CMOS 2.2V) VDD271MCTA (CMOS 2.7V) 18 =2.36V~6.V, Step=.2V 18 =2.88V~6.V, Step=.2V Delay Time : TDLY (msec) Ta= 4 C Delay Time : TDLY (msec) Ta= 4 C VDD271SNTA (N-ch 2.7V) VDD31MCTA (CMOS 3.V) 5 =2.88V~6.V, Step=.2V 18 =3.2V~6.V, Step=.2V Delay Time : TDLY (msec) Ta= 4 C Delay Time : TDLY (msec) Ta= 4 C

17 Rev. E13-1 PACKAGE DIMENSIONS (SOT-23) ± ~1.3 Min.1 (Unit : mm) 2.8±.2 (Marked Side) 1.6±.15 ~.1 3~ ± ±.2 Recommended land pattern ± ~

18 Rev. E13-1 TAPING AND LOADING SPECIFICATIONS (SOT-23) 4.±.1 (Unit : mm).2±.5 Mark ø +.1 Mark 2.±.5 3.4±.1 REEL DIMENSIONS (SOT-23) (Unit : mm) 9 2.±.5 12 ø13±.5 ø6±1 3.5± ±.1 ø±.5 4.± ±.1 ø178±2 8.± max. Taping direction (3, pcs / reel) 9.±.5 17

19 may change the products described in this data sheet, or may discontinue production or services without any notice in order to supply the best products through improve the design and performance. Customers are recommended to obtain the latest data or information before placing orders in order to make sure the data or information required is the newest. It is necessary for customers to fully understand the products described in this data sheet and to use it in accordance with its specifications. The products described in this data sheet are not intended to use for the apparatus which have influence on human lives due to the failure or malfunction of the products. Corp. is not responsible for any support to customer s application, product design, software performance, patent infringement or service. Corp. does not disclose or imply a guarantee or description about being licensed based on patents, copy-rights, circuit location license, or other intellectual properties associated with the devices or combinations in which the products or service of Corp. are used or can be used, or which cover the methods. Customers should not export, directly or indirectly, any products without obtaining required licenses and approvals in advance from appropriate government agencies.

20 Rev. E9-1 Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector VDA Series GENUINE PRODUCT LEGITIMATE LABEL DEFINITION Green colored Circle RoHS Label Other specific customized Labels Ordinary Product Information Bar Our internal Outgoing Check Code 3 Code Our Internal QR Check Code 2 Logo and Brand Name (Black color Logo) Our Internal Product Check Code 1 Genuine labels MUST include our correct contact information as shown

VRD Series. AnaSem. High speed, Low dropout, ±1% High output accuracy CMOS Voltage Regulator with Dual output. Analog Semiconductor IC.

VRD Series. AnaSem. High speed, Low dropout, ±1% High output accuracy CMOS Voltage Regulator with Dual output. Analog Semiconductor IC. 安纳森 Analog Semiconductor IC High speed, Low dropout, ±% High output accuracy CMOS Voltage Regulator with Dual output (IMPORTANT: Please check the last page for Genuine Product Labeling) Rev. E- Website: