XCM410 Series. FEATURES High Accuracy APPLICATIONS TYPICAL APPLICATION CIRCUIT. 2 Channel Voltage Detector (Sense Pin separated from V DD ) 1/13
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1 ETR2426_003 2 Channel Voltage Detector (Sense Pin separated from V DD ) GENERAL DESCRIPTION The XCM410 series is a multi combination module IC which comprises of two voltage detectors, XC6108 and XC6109 series. The two detectors inside are highly precise, low power consumption voltage detectors using laser trimming technology. The sense pin (V SEN ) for channel 1 (V OUT1 ) is separated from power supply (V IN ) so that it allows this pin to monitor added power supply. This feature enables output to maintain the state of detection even when voltage of the monitored power supply drops to 0V. The output configuration is N-channel open-drain. APPLICATIONS Microprocessor reset circuitry Charge voltage monitors Memory battery back-up switch circuits Power failure detection circuits FEATURES High Accuracy :±2%(Detect Voltage 1.5V) :±30mV(Detect Voltage<1.5V) Low Power Consumption :1.7μA (TYP) (V OUT1 =1.5V, V OUT2 =3.3V, V IN =4.0V) Detect Voltage Range :Channel1(Sensing pin:v SEN, Output pin:v OUT1 ) 0.8V~5.0V (0.1V increments) :Channel2 (Sensing pin:v IN,Output pin: V OUT2 ) 1.1V~5.0V (0.1V increments) Operating Voltage Range :1.0V~6.0V Detect Voltage Temperature Characteristics :±100ppm/ (TYP.) Output Configuration :N-channel open drain Operating Temperature Range :-40 ~85 Built-In 2 Detect Voltage Circuit Separated Sense Pin :Channel1(Sensing pin:v SEN, Output pin:v OUT1 ) Package :SOT-25 Environmentally Friendly :EU RoHS Compliant, Pb Free TYPICAL APPLICATION CIRCUIT R=100kΩ R=100kΩ Monitoring Power 別電源 Supply 5 4 VIN VSEN VOUT2 VOUT1 VSS SOT-25 (TOP VIEW) /13
2 PIN CONFIGURATION VSEN VIN 5:VSEN 4:VIN 5 4 XC6108 XC VOUT1 VSS VOUT2 SOT-25 (TOP VIEW) 1:VOUT1 2:VSS 3:VOUT2 PIN ASSIGNMENT PIN XCM410 FUNCTION XC6108 XC V OUT1 Output 1 V OUT - 2 V SS Ground V SS V SS 3 V OUT2 Output 2 - V OUT 4 V IN Input Voltage V IN V IN 5 V SEN Sense V SEN - PRODUCT CLASSIFICATION Ordering Information XCM (*1) DESIGNATOR DESCRIPTION SYMBOL DESCRIPTION (*1) (*2) 12 Output Configuration AA V OUT1 /V OUT2 :N-ch open drain output 34 Detect Voltage 01~ 56-7 DESIGNATOR 34 Detect Voltage V DF1 Packages MR SOT-25 Taping Type (*2) MR-G SOT-25 V DF Sequential numbers for two voltage detect combinations V DF1 Detect Voltage Range:0.8V ~ 5.0V (0.1V increments) V DF2 Detect Voltage Range:1.1V ~ 5.0V (0.1V increments) The -G suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. The device orientation is fixed in its embossed tape pocket. For reverse orientation, please contact your local Torex sales office or representative. (Standard orientation: 5R-7, Reverse orientation: 5L-7) *This series are semi-custom products. For other combinations, output voltages and etc., please ask Torex sales contacts. 2/13
3 XCM410 Series BLOCK DIAGRAM VIN each block VSEN VOUT1 Vref VOUT2 Vref each block VSS ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNITS Input Voltage V IN V SS -0.3~7.0 V Output Voltage Nch Open Drain V OUT1 V SS -0.3~7.0 Nch Open Drain V OUT2 V SS -0.3~7.0 V Sense Pin Voltage V SEN V SS -0.3~7.0 V Output Current I OUT1 10 ma I OUT2 10 ma Power Dissipation SOT-25 Pd 250 mw Operating Temperature Range Ta -40~+85 Storage Temperature Range Tstg -55~+125 o C o C 3/13
4 ELECTRICAL CHARACTERISTICS XCM410AA Series PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Operating Voltage (*1) V IN 1 6 V - Detect Voltage 1 (*2) V DF1 E-1 V 1 Detect Voltage 2 (*2) V DF2 E-1 V 2 Hysteresis Width 1 V HYS1 V IN =1.0~6.0V V DF1 X0.02 V DF1 X0.05 V DF1 X0.08 V 1 Hysteresis Width 2 V HYS2 V DF2(T) =1.1~5.0V (*3) V DF2 X0.02 Supply Current 1 (*4) Supply Current 2 (*4) Output Current 1 Output Current 2 N-ch Driver Leakage Current 1 N-ch Driver Leakage Current 2 Temperature Characteristics (*1) I SS1 I SS2 I OUT1 I OUT2 I LEAK1 I LEAK2 ΔV DF/ ΔTa V DF V IN =V DF2 0.9 V SEN =V DF1 0.9 V DF2(T) =1.1V~1.9V V DF2(T) =2.0V~3.9V V DF2(T) =4.0V~5.0V V IN =V DF2 1.1 V SEN =V DF1 1.1 V DF2(T) =1.1V~1.9V V DF2(T) =2.0V~3.9V V DF2(T) =4.0V~5.0V V SEN =0V V DS =0.5V(N-ch) V IN =1.0V V IN =2.0V V IN =3.0V V IN =4.0V V IN =5.0V V IN =6.0V V DS =0.5V(N-ch) V IN =1.0V (*5) V IN =2.0V (*6) V IN =3.0V (*7) V IN =4.0V (*8) V IN =6.0V, V SEN =6.0V, V OUT =6.0V V IN =6.0V V OUT =6.0V V DF2 X V DF2 X V μa μa ma ma μa μa 4-40 o C Ta 85 o C ±100 ppm/ o C 1 Sense Resistance (*9) R SEN V SEN =5.0V V IN =0V E-2 MΩ 6 Detect Delay 1 (*10) t DF1 V IN =6.0V μs 7 Detect Delay 2 (*11) t DF2 V IN =6.0V 1.0V μs 8 Release Delay 1 (*12) t DR1 V IN =6.0V μs 7 Release Delay 2 (*13) t DR2 V IN =1.0V 6.0V μs 8 NOTE: *1: V OUT1 V OUT2 : same characteristics. *2: The detect voltage range for V DF1 (V OUT1 ): 0.8V~5.0V. The detect voltage range for V DF2 (V OUT2 ): 1.1V~5.0V. *3: The detect voltage for V DF2(T) (V OUT2). *4: Current flowing to the sense resistor is not included. *5: V DF2(T) >1.0V *6: V DF2(T) >2.0V *7: V DF2(T) >3.0V *8: V DF2(T) >4.0V *9: Calculated from current value and voltage values at the both ends of the resistor. *10: Time until V SEN =V DF1 reaches V OUT1 =V IN x0.1 when V SEN falls. *11: Time until V IN =VDF2 reaches V OUT2 =0.6V when V IN falls. *12: Time until V SEN =V DF1 +V HYS1 reaches V OUT1 =V IN when V SEN rises. *13: Time until V IN =V DF2 +V HYS2 reaches V OUT2 =5.4V when V IN rises. 4/13
5 XCM410 Series VOLTAGE CHART PARAMETER NOMINAL DETECT VOLTAGE E-1 E-2 DETECT VOLTAGE (*1) (V) SENSE RESISTANCE (MΩ) V DF1(T),V DF2(T) V DF1,V DF2 R SEN (V) MIN. MAX. MIN. TYP (*1) When V DF1(T),V DF2(T) 1.4V, detect accuracy is ±30mV. When V DF1(T),V DF2(T) 1.5V, detect accuracy is ±2% /13
6 OPERATIONAL EXPLANATION Figure1 is typical application circuit, and Fifure2 is timing chart of figure1. Figure 1: Typical application circuit example Input Voltage: V IN Release Voltage: V DF2 +V HYS2 Detect Voltage: V DF2 Minimum Operation Voltage: 1.0V Sense Pin Voltage: V SEN Release Voltage: V DF1 +V HYS1 Detect Voltage: V DF1 Output Voltage: V OUT1 Output Voltage: V OUT2 Figure 2: The timing chart of Figure 1 1 As an early state, the V IN power supply pin and the V SEN sense pin are applied sufficiently high voltage (6.0V MAX.). While the sense pin voltage VSEN starts dropping to the detect voltage VDF1 (VSEN>VDF1), the output voltage VOUT1 keeps high level (=VIN). * If a pull-up resistor of the N-ch open drain is connected to added power supply different from the input voltage pin, the high level will be a voltage value where the pull-up resistor is connected. 2 When the sense pin voltage keeps dropping and becomes equal to the detect voltage (VSEN =VDF1), the output voltage changes into the low level ( V IN 0.1). The detect delay time tdf1 is defined as time which ranges from VSEN=VDF1 to the VOUT1 goes in low level. 3 The output voltage (V OUT1 ) maintains low level while the sense pin voltage increases again to reach the release voltage (VSEN< VDF1 +VHYS1). 4 The release delay time tdr1 is defined as time which ranges from sense pin voltage reaches release voltage (V SEN V DF1 +V HYS1 ) to the V OUT1 goes in high level. 6/13
7 XCM410 Series OPERATIONAL EXPLANATION (Continued) 5 The output voltage V OUT1 maintains high level (=V IN ) while the sense pin voltage more than detect voltage (V SEN >V DF1 ). 6 The V IN input voltage pin is applied sufficiently high voltage to the release voltage (V DF2 +V HYS2 ). While the input pin voltage V IN starts dropping to the detect voltage V DF2 (V IN > V DF2 ), the output voltage V OUT2 keeps high level (=V IN ). * If a pull-up resistor of the N-ch open drain is connected to added power supply different from the input voltage pin, the high level will be a voltage value where the pull-up resistor is connected. 7 When the input pin voltage keeps dropping and becomes equal to the detect voltage (V IN = V DF2 ), the output voltage changes into low level ( V IN 0.1). The detect delay time t DF2 is defined as time which ranges from V IN =V DF to the V OUT goes in low level. 8 While the input pin voltage keeps below the detect voltage V DF2, and 1.0V or more, the output voltage V OUT2 maintains low level. 9 While the input pin voltage drops to 1.0V or less and it increases again to 1.0V or more, the output voltage (V OUT2 ) may not be able to maintain low level. Such an operation is called Undefined Operation, and the output voltage from the V OUT2 pin is called undefined operating voltage V UNS. 10 While the input pin voltage increases from 1.0V to the release voltage level (V IN <V DF2 +V HYS2 ), the output voltage (V OUT2 ) maintains low level. 11 The release delay time tdr2 is defined as time which ranges from the V IN power supply voltage pin reaches release voltage (V IN V DF2 +V HYS2 ) to the V OUT2 goes in high level. 12 The output voltage V OUT2 maintains high level (=V IN ) while the power supply voltage more than detect voltage (V IN >V DF2 ). 13 If a pull-up resistor Rpull1 of the N-ch open drain is connected to power supply V IN, output voltage V OUT1 becomes same to the input voltage V IN. While the V IN power supply voltage drops below 1.0V and increases again to 1.0V or more, the output voltage V OUT2 may not be able to maintain low level. 7/13
8 NOTE ON USE 1. Use this IC within the stated maximum ratings. Operation beyond these limits may cause degrading or permanent damage to the device. 2. The power supply input pin voltage drops by the resistance between power supply and the VIN pin, and by through current at operation of the IC. At this time, the IC may go into malfunction if the power supply input pin voltage falls below the minimum operating voltage range. 3. When the sense voltage is less than 1.0V, be sure to separate the VIN pin and the sense pin, and to apply the voltage over 1.0V to the VIN pin. 4. Note that a rapid and high fluctuation at the power supply input pin voltage may cause a wrong operation. 5. In N channel open drain output, V OUT voltages at detect and release are determined by resistance of a pull-up resistor connected at the V OUT pin. Please choose proper resistance values with referring to Figure 3; During detection:v OUT =Vpull / (1+Rpull / R ON ) Vpull:Pull-up voltage R (*1) ON :On-resistance of N channel driver M3 can be calculated as V DS / I OUT1 from electrical characteristics, For example, when (*2) R ON = 0.5 / = 625Ω(MIN.)at V IN =2.0V, Vpull = 3.0V and V OUT 0.1V at detect, Rpull= (Vpull /V OUT -1) R ON = (3 / 0.1-1) kΩ In this case, Rpull should be selected higher or equal to 18kΩ in order to keep the output voltage less than 0.1V during detection. (*1) V IN is smaller R ON is bigger, be noted. (*2) For calculation, minimum V IN should be chosen among the input voltage range. During releasing:v OUT = Vpull / (1 + Rpull / R OFF ) Vpull:Pull-up voltage R OFF :On-resistance of N channel driver M3 is 15MΩ(MIN.)when the driver is off (as to V OUT / I LEAK ) For example:when Vpull = 6.0V and V OUT 5.99V, Rpull = (Vpull / V OUT -1) Roff = (6/5.99-1) kω In this case, Rpull should be selected smaller or equal to 25 kω in order to obtain output voltage higher than 5.99V during releasing. NOTE: Roff=V OUT /I LEAK Figure 3: Test Circuit 8/13
9 XCM410 Series TEST CIRCUITS Circuit 1 Circuit 2 Circuit 3 Circuit 4 Circuit 5 Circuit 6 Circuit 7 Waveform Measurement Point1 Waveform Measurement Point2 Waveform 1 Waveform 2 Circuit 8 Waveform Measurement Point1 Waveform 1 Waveform Measurement Point2 Waveform 2 9/13
10 TYPICAL PERFORMANCE CHARACTERISTICS (1)Detect Voltage vs. Ambient Temperature (2)Detect Voltage vs. Input Voltage Detect Voltage: VDF (V) XC6108C25AGR VIN=4.0V Ambient Temperature: Ta ( ) Detect Voltage: VDF (V) XC6108C25AGR 2.55 Ta= Supply Voltage: VIN (V) (3)Hysteresis Voltage vs. Ambient Temperature (4)Output Voltage vs. Sense Voltage Hysteresis Voltage: VHYS (V) XC6108C25AGR VIN=4.0V Ambient Temperature: Ta ( ) Output Voltage: VOUT (V) XC6108C25AGR Ta=25 VIN=6.0V 4.0V 1.0V Sense Voltage: VSEN (V) (5)Output Voltage vs. Input Voltage (6)Output Current vs. Input Voltage XC6108N25AGR XC6108C25AGR Output Voltage: VOUT (V) VSEN=VIN Pull-up=VIN R=100kΩ Ta= Supply Voltage: VIN (V) Output Current: Iout (ma) VDS(Nch)=0.5V Ta= Supply Voltage: VIN (V) 10/13
11 XCM410 Series TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (7)Leak Current vs. Ambient Temperature (8)Leak Current vs. Output Voltage Leak Carrent: ILEAK ( μ A) XC6108N25AGR VIN=VSEN=6.0V VOUT=6.0V Ambient Temperature: Ta ( ) Leak Carrent: ILEAK ( μ A) XC6108N25AGR VIN=VSEN=6.0V Supply Voltage: VOUT (V) 11/13
12 PACKAGING INFORMATION SOT-25 *The side of pins are not gilded, but nickel is used: Sn 5~15μm SOT-25 Reference Pattern Layout 12/13
13 XCM410 Series 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 13/13
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