XP202A0003MR-G FEATURES APPLICATIONS PRODUCT NAME PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS. P-channel 4V (G-S) MOSFET 1/5

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1 -G ETR28 P-channel 4V (G-S) MOSFET FEATURES Low On Resistance Ultra High Speed Switching V Driving EU RoHS Compliant, Pb Free ABSOLUTE MAXIMUM RATINGS APPLICATIONS Switching PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT -G SOT3 3,/Reel * The -G suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant. PIN CONFIGURATION PARMETER SYMBOL RATINGS UNITS Drain-Source Voltage V DSS -3 V Gate-Source Voltage S ±2 V Drain Current (DC) I D -3 A Drain Current(Pulse) ( * ) I DP A Channel Power Dissipation ( * 2) Pd W Channel Temperature Tch +5 Storage Temperature Tstg - 55 ~ +5 ( * ) PW μs,duty cycle % ( * 2) Ceramic Board (9mm2.8mm) Mounting SOT3(TOP VIEW). Gate 2. Source 3. Drain ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN. TYP. MAX. Drain-Source Breakdown Voltage V (BR)DSS I D =-ma, =V V Drain-Source Cut-Off Current I DSS V DS =-3V, =V μa Gate-Source Leakage Current I GSS =±6V,VDS=V - - ± μa Gate-Source Cut-Off Voltage (off) V DS =-V,ID=-mA V Forward Transfer Admittance yfs V DS =-V,ID=-3A S R DS(ON) I D =-.5A,VGS=-V mω Drain-Source ON Resistance R DS(ON) 2 I D =-.A,VGS=.5V mω R DS(ON) 3 I D =-.A,VGS=V mω Input Capacity Ciss V DS =-V,f=MHz pf Output Capacity Coss V DS =-V,f=MHz - - pf Feedback capacity Crss V DS =-V,f=MHz pf Turn on Delay time td(on) ID=-A ns Rise Time tr ID=-A ns Turn off Delay Time td(off) ID=-A ns Fall Time tf ID=-A - - ns All Gate Charge Amount Qg VDS=-5V, VGS=-V, ID=-3A - - nc Gate Source Charge Amount Qgs VDS=-5V, VGS=-V, ID=-3A nc Gate Drain Charge Amount Qgd VDS=-5V, VGS=-V, ID=-3A nc Diode Forward Voltage V SD I S =-3A, =V V /5

2 -G SWITCHING-TIME TEST CIRCUIT S V 9% VI 5Ω VI % G V 9% 9% Oscilloscope D VO VO RL % td(on) tr td(off) tf % Oscilloscope EQUIVALENT CIRCUIT PACKAGING INFORMATION SOT3 MARKING RULE represents product series 2 MARK PRODUCT SERIES 6 XP22*******-G 2 3 represents product group and number MARK 3 PRODUCT GROUP PRODUCT NUMBER PRODUCT SERIES A D 3 XP22A3**-G 4,5 represents production lot number to 9, A to Z, to 9Z, A to A9, AA to Z9, ZA to ZZ repeated (G, I, J, O, Q, W excluded) 2/5

3 -G TYPICAL PERFORMANCE CHARACTERISTICS () Drain Current vs. Drain-Source Voltage (2) Drain Current vs. Drain-Source Voltage. Ta= 25, Pulse Test V DS = -V, Pulse Test V.V.V -3.5V -3.V.V -.V =.5V Ta= 75 Ta= 25 Ta= Gate-Source Voltage: (3) Drain-Source On-State Resistance vs. Gate-Source Voltage (4) Drain-Source On-State Resistance vs. Ambient Temperature 3 Ta= 25 4 Static Drain-source On-State Resistance: R DS (on) (mω) I D = -.5A I D = -.A Static Drain-source On-State Resistance:R DS (on) (mω) =.V, I D = -.A =.5V, I D = -.5A = -V, I D = -.5A Gate-Source Voltage: Ambient Temperature: Ta ( ) (5) Forward Transfer Admittance vs. Drain Current (6) Source Current vs. Diode Forward Voltage V DS = -V = V Forward Transfer Admittance : yfs (S) Ta= 5 Ta=75 Source Current: I S. Ta= 75 Ta= Diode Forw ard Voltage: V SD 3/5

4 -G TYPICAL PERFORMANCE CHARACTERISTICS (7) Switching Time vs. Drain Current (8) Ciss, Coss, Crss vs. Drain-Source Voltage = -V, V DS= -5V f=mhz Ciss Switching Time: t (ns) tf td(on) td(off) tr Ciss, Coss, Crss (pf) Coss Crss (9) Gate-Source Voltage vs. Gate Charge () Area of Safe Operation - V DS= -5V, I D= -3A Gate-Source Voltage: Drain Current: ID. I D =A I D =-3A Operation in this area is limited by R DS (on) Single pulse When mounted on ceramic substrate (9mm 2 X.8mm).ms ms ms ms ms DC Operation... Gate Charge: Qg (nc) 4/5

5 -G. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 5/5