Switching Time and Conduction Voltage Drop

Size: px
Start display at page:

Download "Switching Time and Conduction Voltage Drop"

Transcription

1 Exercise 4-1 EXERCISE OBJECTIVES At the completion of this exercise, you will be able to describe the behavior of a bipolar transistor when it turns on or turns off, and during conduction. DISCUSSION To visualize what is happening in a commutating electronic device, we will study a circuit formed by a bipolar transistor, a load resistor and a fixed dc power supply. 4-5

2 To simplify the study, the resistive load, the power supply and the connecting cable won't be considered as inductive. However, it is important to note that, in practice, these components are inductive and influence circuit behavior. The electronic switches used in power electronics do not exhibit ideal behaviour. 4-6

3 The response time after the application of a turn-on or turn-off pulse is not instantaneous. When a base current is applied to turn on a transistor and there is no current flowing in the transistor and load resistor, the transistor doesn't respond before a certain time. This time interval is called turn-on delay time (t d(on) ). The transistor will then progressively begin to conduct for a few microseconds. The current will increase in the load and the transistor up to a value equal to V CC /R. The time interval during which the current increases to maximum amplitude is called the current rise time t r. 4-7

4 While this current I C increases in the transistor collector, the voltage (V CE ) across the transistor will decrease from V CC to a weak on-state voltage V CE(ON), as shown in the figure. The voltage across the transistor can be approximated from the following equation V CE = V CC - RI C If the base current is interrupted, the transistor does not respond before a certain time called the turn-off delay time (t d(off) ). It will then cease to conduct and the current I C flowing through it progressively decreases for a few microseconds until it stops completely. The figure also shows that voltage V CE increases progressively during the current fall time (t f ). 4-8

5 PROCEDURE * 1. Connect the POWER INPUT terminals of the circuit board to the power supply. Do not turn on the power supply at this time. * 2. Set up the circuit shown in the figure. Note: The oscilloscope must be isolated from ground to allow correct signal observation. * 3. Turn on the power supply and the square wave generator. Using the oscilloscope, adjust the generator frequency to 20 khz. 4-9

6 CAUTION! The load resistors will get very hot. Avoid touching them to prevent burn injury. * 4. Connect the oscilloscope as shown in the figure, making sure that the probe commons are both connected to the collector terminal of the bipolar transistor. Set the oscilloscope controls so that both channels can be observed at the same time. Set channel 2 in the reverse mode so you can correctly read the transistor voltage V CE. Set the time base to 10 µsec/div. * 5. You should now observe the current I C (measured from the voltage across the resistor R4) on channel 1 and the voltage V CE on channel 2. Both signals are being switched at the frequency of the square wave. * 6. Observe the signals when the transistor turns on. Does the current increase in the transistor at the same time the voltage across its terminals decreases from 15 to 0 Volts? * Yes * No * 7. Set the oscilloscope to observe the signals when the transistor is turning on and adjust the time base to observe the rising edge of the signal on channel 1 (less than 1µsec/div). 4-10

7 * 8. When the transistor turns on, can you say that switching is instantaneous, that is, the current rise time t r = 0 sec? * Yes * No * 9. How much time does it take for the current I C to rise to its maximum amplitude when the transistor turns on? Current t r = nsec * 10. Set the oscilloscope so you can observe the signals when the transistor is turning off (V CE increases from 0 to 15 V). * 11. When the transistor turns off, can you say that switching is instantaneous, that is, the current fall time t f = 0 sec? * Yes * No * 12. When the transistor turns off, how much time does it take for the current I C to change from its maximum amplitude to its minimum amplitude? Current t f = nsec * 13. Set the time base to 10 µsec/div again in order to observe transistor turn-on and turn-off. Set channel 2 gain so you can observe the voltage across the transistor when it is conducting. Measure the on-state voltage of the transistor. V CE(ON) = mv 4-11

8 * 14. Place the oscilloscope probes so that you can observe the control signal and the transistor voltage V CE simultaneously. To do so, place the probe commons on the circuit common, place probe 1 on terminal A of the BIPOLAR TRANSISTOR circuit block and probe 2 on the bipolar transistor collector. Restore the non-reverse mode on channel 2. * 15. Set the oscilloscope controls so you can observe the transistor turning on. * 16. Can you say that the transistor responds rapidly (t d(on) < 300 nsec) to the turn-on control signal? * Yes * No * 17. Set the oscilloscope controls so you can observe the transistor turning off. * 18. Measure the time interval between the application of the turn-off control signal and the moment the voltage starts to respond (voltage V CE begins to rise). T d(off) = nsec * 19. Referring to these results, can you say that the bipolar transistor behaves like an ideal switch? * Yes * No 4-12

9 * 20. Turn off the power supply and remove all the connecting wires. CONCLUSION & & & While the bipolar transistor can turn on or turn off rapidly, it doesn't switch instantaneously (t r > 0 sec. and t f > 0 sec.). One can observe a voltage across a bipolar transistor that is in conduction (V CE(ON) > 0 V). There is a delay (t d(off) ) between the application of a turn-off control signal and the moment where the current flow starts to decrease in the bipolar transistor. This delay is smaller when the transistor turns on (t d(on) ). REVIEW QUESTIONS 1. In a resistive circuit, when the bipolar transistor turns on, a. the current I C increases while the voltage V CE decreases. b. the current I C decreases while the voltage V CE increases. c. the current I C increases after which, the voltage V CE decreases. d. the voltage V CE increases after which, the current I C decreases. 2. In a resistive circuit, when the bipolar transistor turns off, a. the current I C increases while the voltage V CE decreases. b. the current I C decreases while the voltage V CE increases. c. the current I C increases after which, the voltage V CE decreases. d. the voltage V CE increases after which, the current I C decreases. 3. Changing the duty cycle a. decreases the current rise time. b. changes the output voltage of a buck chopper. c. changes the input voltage of a buck chopper. d. All of the above. 4. If the base current of a bipolar transistor is interrupted, a. collector current is immediately stopped. b. voltage V CE increases immediately. c. collector current decreases after a delay t d(on). d. collector current decreases after a delay t d(off). 4-13

10 5. The bipolar transistor is not an ideal self-commutated switch because a. it cannot switch instantaneously. b. a voltage remains across its terminals when it is in conduction. c. it doesn't respond immediately when the current is interrupted at its base. d. All of the above. 4-14

Exercise 4-2. Switching Power in an Inductive Load EXERCISE OBJECTIVES

Exercise 4-2. Switching Power in an Inductive Load EXERCISE OBJECTIVES Exercise 4-2 Switching Power in an Inductive Load EXERCISE OBJECTIVES At the completion of this exercise, you will be able to switch the current in an inductive load and you will understand the purpose

More information

Exercise 5-1. The Bipolar Power Transistor EXERCISE OBJECTIVES

Exercise 5-1. The Bipolar Power Transistor EXERCISE OBJECTIVES Exercise 5-1 EXERCISE OBJECTIVES At the completion of this exercise, you will be able to identify different ways of improving bipolar transistor switching. You will know the role of the various circuit

More information

Exercise 6-2. The IGBT EXERCISE OBJECTIVES

Exercise 6-2. The IGBT EXERCISE OBJECTIVES Exercise 6-2 The IGBT EXERCISE OBJECTIVES At the completion of this exercise, you will know the behaviour of the IGBT during switching operation. You will be able to explain how IGBT switching can be improved.

More information

When you have completed this exercise, you will be able to determine ac operating characteristics of a

When you have completed this exercise, you will be able to determine ac operating characteristics of a When you have completed this exercise, you will be able to determine ac operating characteristics of a multimeter and an oscilloscope. A sine wave generator connected between the transistor base and ground

More information

Exercise 2: Source and Sink Current

Exercise 2: Source and Sink Current Digital Logic Fundamentals Tri-State Output Exercise 2: Source and Sink Current EXERCISE OBJECTIVE When you have completed this exercise, you will be able to demonstrate how a tri-state buffer output can

More information

Exercise 2: AC Voltage and Power Gains

Exercise 2: AC Voltage and Power Gains Exercise 2: AC Voltage and Power Gains an oscilloscope. Signals of equal magnitude but opposite polarity are needed for each transistor (Q1 and Q2). Center-tapped input transformer T1 is used as a phase

More information

DC Link. Charge Controller/ DC-DC Converter. Gate Driver. Battery Cells. System Controller

DC Link. Charge Controller/ DC-DC Converter. Gate Driver. Battery Cells. System Controller Integrate Protection with Isolation In Home Renewable Energy Systems Whitepaper Home energy systems based on renewable sources such as solar and wind power are becoming more popular among consumers and

More information

The collector terminal is common to the input and output signals and is connected to the dc power supply. Common Collector Circuit

The collector terminal is common to the input and output signals and is connected to the dc power supply. Common Collector Circuit Common Collector Circuit When you have completed this exercise, you will be able to determine the dc operating conditions of a common collector (CC) transistor circuit by using a typical CC circuit. You

More information

Exercise 2: AC Voltage and Power Gains

Exercise 2: AC Voltage and Power Gains Exercise 2: AC Voltage and Power Gains When you have completed this exercise, you will be able to determine voltage and power gains by using oscilloscope. The ac operation schematic for the COMPLEMENTARY

More information

When you have completed this exercise, you will be able to determine the ac operating characteristics of

When you have completed this exercise, you will be able to determine the ac operating characteristics of When you have completed this exercise, you will be able to determine the ac operating characteristics of multimeter and an oscilloscope. A sine wave generator connected between the transistor and ground

More information

When you have completed this exercise, you will be able to determine the frequency response of an

When you have completed this exercise, you will be able to determine the frequency response of an RC Coupling When you have completed this exercise, you will be able to determine the frequency response of an oscilloscope. The way in which the gain varies with frequency is called the frequency response.

More information

UNIVERSITY QUESTIONS. Unit-1 Introduction to Power Electronics

UNIVERSITY QUESTIONS. Unit-1 Introduction to Power Electronics UNIVERSITY QUESTIONS Unit-1 Introduction to Power Electronics 1. Give the symbol and characteristic features of the following devices. (i) SCR (ii) GTO (iii) TRIAC (iv) IGBT (v) SIT (June 2012) 2. What

More information

Exercise 1: Effect of Shunt Feedback on AC Gain

Exercise 1: Effect of Shunt Feedback on AC Gain Exercise 1: Effect of Shunt Feedback on AC Gain When you have completed this exercise, you will be able to understand the effect of shunt negative feedback on ac gain by using a typical shunt feedback

More information

DISCUSSION The best way to test a transistor is to connect it in a circuit that uses the transistor.

DISCUSSION The best way to test a transistor is to connect it in a circuit that uses the transistor. Exercise 1: EXERCISE OBJECTIVE When you have completed this exercise, you will be able to test a transistor by forward biasing and reverse biasing the junctions. You will verify your results with an ohmmeter.

More information

Exercise 1: Tri-State Buffer Output Control

Exercise 1: Tri-State Buffer Output Control Exercise 1: Tri-State Buffer Output Control EXERCISE OBJECTIVE When you have completed this exercise, you will be able to demonstrate how the enable and data inputs control the output state of a tri-state

More information

PHYSICS 536 Experiment 14: Basic Logic Circuits

PHYSICS 536 Experiment 14: Basic Logic Circuits PHYSICS 5 Experiment 4: Basic Logic Circuits Several T 2 L ICs will be used to illustrate basic logic functions. Their pin connections are shown in the following sketch, which is a top view. 4 2 9 8 +5V

More information

Experiment No. 6 Output Characteristic of Transistor

Experiment No. 6 Output Characteristic of Transistor Experiment No. 6 Output Characteristic of Transistor Object: To examine the output characteristic of transistor. Apparatus: 1. Two DC power supply. 2. Three AVOmeters. 3. Transistor 2N2222, Resistor 1

More information

). The THRESHOLD works in exactly the opposite way; whenever the THRESHOLD input is above 2/3V CC

). The THRESHOLD works in exactly the opposite way; whenever the THRESHOLD input is above 2/3V CC ENGR 210 Lab 8 RC Oscillators and Measurements Purpose: In the previous lab you measured the exponential response of RC circuits. Typically, the exponential time response of a circuit becomes important

More information

UC Berkeley, EECS Department

UC Berkeley, EECS Department UC Berkeley, EECS Department B. Boser EECS 4 Lab LAB5: Boost Voltage Supply UID: Boost Converters We have tried to use resistors (voltage dividers) to transform voltages but found that these solutions

More information

UNISONIC TECHNOLOGIES CO., LTD UG15N41

UNISONIC TECHNOLOGIES CO., LTD UG15N41 UNISONIC TECHNOLOGIES CO., LTD UG15N41 15A, 410V NPT SERIES N-CHANNEL IGBT DESCRIPTION The UTC UG15N41 is a Logic Level Insulated Gate Bipolar Transistor features monolithic circuitry integrating ESD and

More information

Exercise 1: Series RLC Circuits

Exercise 1: Series RLC Circuits RLC Circuits AC 2 Fundamentals Exercise 1: Series RLC Circuits EXERCISE OBJECTIVE When you have completed this exercise, you will be able to analyze series RLC circuits by using calculations and measurements.

More information

LABORATORY 7 v2 BOOST CONVERTER

LABORATORY 7 v2 BOOST CONVERTER University of California Berkeley Department of Electrical Engineering and Computer Sciences EECS 100, Professor Bernhard Boser LABORATORY 7 v2 BOOST CONVERTER In many situations circuits require a different

More information

6. Explain control characteristics of GTO, MCT, SITH with the help of waveforms and circuit diagrams.

6. Explain control characteristics of GTO, MCT, SITH with the help of waveforms and circuit diagrams. POWER ELECTRONICS QUESTION BANK Unit 1: Introduction 1. Explain the control characteristics of SCR and GTO with circuit diagrams, and waveforms of control signal and output voltage. 2. Explain the different

More information

ASTABLE MULTIVIBRATOR

ASTABLE MULTIVIBRATOR 555 TIMER ASTABLE MULTIIBRATOR MONOSTABLE MULTIIBRATOR 555 TIMER PHYSICS (LAB MANUAL) PHYSICS (LAB MANUAL) 555 TIMER Introduction The 555 timer is an integrated circuit (chip) implementing a variety of

More information

Exercise 3: Series-Shunt Voltage Gain

Exercise 3: Series-Shunt Voltage Gain Exercise 3: Series-Shunt Voltage Gain When you have completed this exercise, you will be able to calculate and measure series-shunt voltage oscilloscope. Resistor R ef provides series feedback to the input

More information

PHYS 3152 Methods of Experimental Physics I E2. Diodes and Transistors 1

PHYS 3152 Methods of Experimental Physics I E2. Diodes and Transistors 1 Part I Diodes Purpose PHYS 3152 Methods of Experimental Physics I E2. In this experiment, you will investigate the current-voltage characteristic of a semiconductor diode and examine the applications of

More information

TYPICAL PERFORMANCE CURVES = 25 C = 110 C = 175 C. Watts T J. = 4mA) = 0V, I C. = 3.2mA, T j = 25 C) = 25 C) = 200A, T j = 15V, I C = 125 C) = 25 C)

TYPICAL PERFORMANCE CURVES = 25 C = 110 C = 175 C. Watts T J. = 4mA) = 0V, I C. = 3.2mA, T j = 25 C) = 25 C) = 200A, T j = 15V, I C = 125 C) = 25 C) TYPICAL PERFORMANCE CURVES 6V APT2GN6J APT2GN6J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low (ON) and are ideal for low frequency applications that require

More information

NGD8205ANT4G. Ignition IGBT. 20 Amp, 350 Volt, N Channel DPAK. 20 A, 350 V V CE(on) = 1.3 I C = 10 A, V GE 4.5 V

NGD8205ANT4G. Ignition IGBT. 20 Amp, 350 Volt, N Channel DPAK. 20 A, 350 V V CE(on) = 1.3 I C = 10 A, V GE 4.5 V NGD25AN Ignition IGBT 2 Amp, 35 Volt, N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in

More information

Exercise 1: AC Waveform Generator Familiarization

Exercise 1: AC Waveform Generator Familiarization Exercise 1: AC Waveform Generator Familiarization EXERCISE OBJECTIVE When you have completed this exercise, you will be able to operate an ac waveform generator by using equipment provided. You will verify

More information

Introduction to High-Speed Power Switching

Introduction to High-Speed Power Switching Exercise 3 Introduction to High-Speed Power Switching EXERCISE OBJECTIVE When you have completed this exercise, you will be familiar with the concept of voltage-type and current-type circuits. You will

More information

Week 8 AM Modulation and the AM Receiver

Week 8 AM Modulation and the AM Receiver Week 8 AM Modulation and the AM Receiver The concept of modulation and radio transmission is introduced. An AM receiver is studied and the constructed on the prototyping board. The operation of the AM

More information

ES 330 Electronics II Homework # 2 (Fall 2016 Due Wednesday, September 7, 2016)

ES 330 Electronics II Homework # 2 (Fall 2016 Due Wednesday, September 7, 2016) Page1 Name ES 330 Electronics II Homework # 2 (Fall 2016 Due Wednesday, September 7, 2016) Problem 1 (15 points) You are given an NMOS amplifier with drain load resistor R D = 20 k. The DC voltage (V RD

More information

Lab 4: Analysis of the Stereo Amplifier

Lab 4: Analysis of the Stereo Amplifier ECE 212 Spring 2010 Circuit Analysis II Names: Lab 4: Analysis of the Stereo Amplifier Objectives In this lab exercise you will use the power supply to power the stereo amplifier built in the previous

More information

TRANSISTOR SWITCHING WITH A REACTIVE LOAD

TRANSISTOR SWITCHING WITH A REACTIVE LOAD TRANSISTOR SWITCHING WITH A REACTIVE LOAD (Old ECE 311 note revisited) Electronic circuits inevitably involve reactive elements, in some cases intentionally but always at least as significant parasitic

More information

MICROCONTROLLER BASED BOOST PID MUNAJAH BINTI MOHD RUBAEE

MICROCONTROLLER BASED BOOST PID MUNAJAH BINTI MOHD RUBAEE MICROCONTROLLER BASED BOOST PID MUNAJAH BINTI MOHD RUBAEE This thesis is submitted as partial fulfillment of the requirement for the award of Bachelor of Electrical Engineering (Power System) Faculty of

More information

Exercise 2. The Buck Chopper EXERCISE OBJECTIVE DISCUSSION OUTLINE. The buck chopper DISCUSSION

Exercise 2. The Buck Chopper EXERCISE OBJECTIVE DISCUSSION OUTLINE. The buck chopper DISCUSSION Exercise 2 The Buck Chopper EXERCISE OBJECTIVE When you have completed this exercise, you will be familiar with the operation of the buck chopper. DISCUSSION OUTLINE The Discussion of this exercise covers

More information

Lab 3: BJT Digital Switch

Lab 3: BJT Digital Switch Lab 3: BJT Digital Switch Objectives The purpose of this lab is to acquaint you with the basic operation of bipolar junction transistor (BJT) and to demonstrate its functionality in digital switching circuits.

More information

When you have completed this exercise, you will be able to determine the frequency response of a

When you have completed this exercise, you will be able to determine the frequency response of a When you have completed this exercise, you will be able to determine the frequency response of a an oscilloscope. Voltage gain (Av), the voltage ratio of the input signal to the output signal, can be expressed

More information

Exercise 1: Inductors

Exercise 1: Inductors Exercise 1: Inductors EXERCISE OBJECTIVE When you have completed this exercise, you will be able to describe the effect an inductor has on dc and ac circuits by using measured values. You will verify your

More information

IRGMC50F. Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 600V. V CE(on) max = 1.7V

IRGMC50F. Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 600V. V CE(on) max = 1.7V PD -90718B INSULATED GATE BIPOLAR TRANSISTOR IRGMC50F Fast Speed IGBT Features Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 khz - 8 khz Switching-loss

More information

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 8 AMPLITUDE MODULATION AND DEMODULATION OBJECTIVES The focus of this lab is to familiarize the student

More information

UNIVERSITY OF UTAH ELECTRICAL ENGINEERING DEPARTMENT

UNIVERSITY OF UTAH ELECTRICAL ENGINEERING DEPARTMENT UNIVERSITY OF UTAH ELECTRICAL ENGINEERING DEPARTMENT ECE 3110 LAB EXPERIMENT NO. 4 CLASS AB POWER OUTPUT STAGE Objective: In this laboratory exercise you will build and characterize a class AB power output

More information

Exercise 1: DC Operation of a NOT and an OR-TIE

Exercise 1: DC Operation of a NOT and an OR-TIE Open Collector and Other TTL Gates Digital Logic Fundamentals Exercise 1: DC Operation of a NOT and an OR-TIE EXERCISE OBJECTIVE When you have completed this exercise, you will be able to demonstrate the

More information

Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A

Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 7 A VS-GB75LA6UF FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 5 khz Square RBSOA SOT-227

More information

15EEE282 Electronic Circuits and Simulation Lab - I Lab # 6

15EEE282 Electronic Circuits and Simulation Lab - I Lab # 6 Exp. No #6 FREQUENCY RESPONSE OF COMMON EMITTER AMPLIFIER OBJECTIVE The purpose of the experiment is to design a common emitter amplifier. To analyze and plot the frequency response of the amplifier with

More information

The Single-Phase PWM Inverter with Dual-Polarity DC Bus

The Single-Phase PWM Inverter with Dual-Polarity DC Bus Exercise 2 The Single-Phase PWM Inverter with Dual-Polarity DC Bus EXERCISE OBJECTIVE When you have completed this exercise, you will be familiar with the singlephase PWM inverter with dual-polarity dc

More information

Experiment 6: Biasing Circuitry

Experiment 6: Biasing Circuitry 1 Objective UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE105 Lab Experiments Experiment 6: Biasing Circuitry Setting up a biasing

More information

HIGH LOW Astable multivibrators HIGH LOW 1:1

HIGH LOW Astable multivibrators HIGH LOW 1:1 1. Multivibrators A multivibrator circuit oscillates between a HIGH state and a LOW state producing a continuous output. Astable multivibrators generally have an even 50% duty cycle, that is that 50% of

More information

CHAPTER 4: 555 TIMER. Dr. Wan Mahani Hafizah binti Wan Mahmud

CHAPTER 4: 555 TIMER. Dr. Wan Mahani Hafizah binti Wan Mahmud CHAPTE 4: 555 TIME Dr. Wan Mahani Hafizah binti Wan Mahmud 555 TIME Introduction Pin configuration Basic architecture and operation Astable Operation Monostable Operation Timer in Triggering Circuits 555

More information

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9SAU SOT-7 PRODUCT SUMMARY V CES V V CE(on) typical at 75 A, 5 C. V I C DC 9 A at 9 C Speed 8 khz to khz Package SOT-7 Circuit Single Switch

More information

Chapter 6: Converter circuits

Chapter 6: Converter circuits Chapter 6. Converter Circuits 6.1. Circuit manipulations 6.2. A short list of converters 6.3. Transformer isolation 6.4. Converter evaluation and design 6.5. Summary of key points Where do the boost, buck-boost,

More information

NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.

NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4. NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications 2.5kV, 60s insulation voltage Industry-benchmark switching losses

More information

DEPARTMENT OF ELECTRONICS AGH UST LABORATORY OF ELECTRONICS ELEMENTS SMALL-SIGNAL PARAMETERS OF BIPOLAR JUNCTION TRANSISTORS REV. 1.

DEPARTMENT OF ELECTRONICS AGH UST LABORATORY OF ELECTRONICS ELEMENTS SMALL-SIGNAL PARAMETERS OF BIPOLAR JUNCTION TRANSISTORS REV. 1. DEPARTMENT OF ELECTRONICS AGH UST LABORATORY OF ELECTRONICS ELEMENTS SMALL-SIGNAL PARAMETERS OF BIPOLAR JUNCTION TRANSISTORS REV. 1.0 1. THE GOAL OF THE EXERCISE - to get acquainted with measurement methods

More information

Exercise 2: Parallel RLC Circuits

Exercise 2: Parallel RLC Circuits RLC Circuits AC 2 Fundamentals Exercise 2: Parallel RLC Circuits EXERCSE OBJECTVE When you have completed this exercise, you will be able to analyze parallel RLC circuits by using calculations and measurements.

More information

PD A IRG4PC60F. Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC. 1

PD A IRG4PC60F. Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC.   1 PD - 94442A INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >20 khz in resonant mode). Generation 4 IGBT design

More information

Exercise 2: Inductors in Series and in Parallel

Exercise 2: Inductors in Series and in Parallel Exercise 2: Inductors in Series and in Parallel EXERCISE OBJECTIVE When you have completed this exercise, you will be able to determine the total inductance of a circuit containing inductors in series

More information

EE 233 Circuit Theory Lab 2: Amplifiers

EE 233 Circuit Theory Lab 2: Amplifiers EE 233 Circuit Theory Lab 2: Amplifiers Table of Contents 1 Introduction... 1 2 Precautions... 1 3 Prelab Exercises... 2 3.1 LM348N Op-amp Parameters... 2 3.2 Voltage Follower Circuit Analysis... 2 3.2.1

More information

LTC3127EDD QUICK START GUIDE. 1A Buck-Boost DC/DC Converter with Programmable Input Current Limit DESCRIPTION

LTC3127EDD QUICK START GUIDE. 1A Buck-Boost DC/DC Converter with Programmable Input Current Limit DESCRIPTION DESCRIPTION Demonstration circuit 1451A is a Buck-Boost DC/DC converter featuring the LTC3127EDD and is ideally suited for pulsed load applications where the input current needs to be limited. Demonstration

More information

Insulated Gate Bipolar Transistor Ultralow V CE(on), 250 A

Insulated Gate Bipolar Transistor Ultralow V CE(on), 250 A Insulated Gate Bipolar Transistor Ultralow V CE(on), 50 A VS-GA50SA60S PRODUCT SUMMARY V CES V CE(on) (typical) at 00 A, 5 C I C at T C = 90 C () Speed Package Circuit SOT-7 600 V.33 V 50 A DC to khz SOT-7

More information

Sept 13 Pre-lab due Sept 12; Lab memo due Sept 19 at the START of lab time, 1:10pm

Sept 13 Pre-lab due Sept 12; Lab memo due Sept 19 at the START of lab time, 1:10pm Sept 13 Pre-lab due Sept 12; Lab memo due Sept 19 at the START of lab time, 1:10pm EGR 220: Engineering Circuit Theory Lab 1: Introduction to Laboratory Equipment Pre-lab Read through the entire lab handout

More information

IXBH 40N160. I C25 = 33 A V CES = 1600 V V CE(sat) = 6.2 V typ. t fi = 40 ns. Monolithic Bipolar MOS Transistor. N-Channel, Enhancement Mode TO-247 AD

IXBH 40N160. I C25 = 33 A V CES = 1600 V V CE(sat) = 6.2 V typ. t fi = 40 ns. Monolithic Bipolar MOS Transistor. N-Channel, Enhancement Mode TO-247 AD High Voltage BIMOSFET TM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode C 25 = 33 A S = V (sat) = 6.2 V typ. t fi = ns TO-247 AD G E G C E G = Gate, C = Collector, E = Emitter, TAB = Collector

More information

PD IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC

PD IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, Generation 4 IGBT design provides higher

More information

FREQUENCY RESPONSE OF COMMON COLLECTOR AMPLIFIER

FREQUENCY RESPONSE OF COMMON COLLECTOR AMPLIFIER Exp. No #6 FREQUENCY RESPONSE OF COMMON COLLECTOR AMPLIFIER OBJECTIVE The purpose of the experiment is to analyze and plot the frequency response of a common collector amplifier. EQUIPMENT AND COMPONENTS

More information

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), A VS-GASA6UP SOT-7 PRIMARY CHARACTERISTICS V CES 6 V V CE(on) (typical).9 V V GE 5 V I C A Speed 8 khz to 3 khz Package SOT-7 Circuit configuration

More information

= 25 C 8 = 110 C 8 = 150 C. Watts T J. = 4mA) = 0V, I C. = 4mA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2

= 25 C 8 = 110 C 8 = 150 C. Watts T J. = 4mA) = 0V, I C. = 4mA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 G C E TYPICAL PERFORMANCE CURVES 12V APT1GN12B2 APT1GN12B2 APT1GN12B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have

More information

Insulated Gate Bipolar Transistor (Trench IGBT), 140 A

Insulated Gate Bipolar Transistor (Trench IGBT), 140 A Insulated Gate Bipolar Transistor (Trench IGBT), 4 A VS-GT4DA6U PRODUCT SUMMARY SOT-7 V CES 6 V I C DC 4 A at 9 C () V CE(on) typical at A, 5 C.7 V I F DC 7 A at 9 C Speed 8 khz to 3 khz Package SOT-7

More information

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9DAU SOT-7 PRODUCT SUMMARY V CES V I C DC 9 A at 9 C V CE(on) typical at 75 A, 5 C 3.3 V Speed 8 khz to 3 khz Package SOT-7 Circuit Single switch

More information

University of North Carolina-Charlotte Department of Electrical and Computer Engineering ECGR 3157 Electrical Engineering Design II Fall 2013

University of North Carolina-Charlotte Department of Electrical and Computer Engineering ECGR 3157 Electrical Engineering Design II Fall 2013 Exercise 1: PWM Modulator University of North Carolina-Charlotte Department of Electrical and Computer Engineering ECGR 3157 Electrical Engineering Design II Fall 2013 Lab 3: Power-System Components and

More information

600V APT75GN60B APT75GN60BG*

600V APT75GN60B APT75GN60BG* G C E TYPICAL PERFORMANCE CURVES APT75GNB(G) V APT75GNB APT75GNBG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

More information

Experiment 6: Biasing Circuitry

Experiment 6: Biasing Circuitry 1 Objective UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE105 Lab Experiments Experiment 6: Biasing Circuitry Setting up a biasing

More information

BJT Characteristics & Common Emitter Transistor Amplifier

BJT Characteristics & Common Emitter Transistor Amplifier LAB #07 Objectives 1. To graph the collector characteristics of a transistor. 2. To measure AC and DC voltages in a common-emitter amplifier. Theory BJT A bipolar (junction) transistor (BJT) is a three-terminal

More information

SCHEMATIC OF GRAYMARK 808 POWERED BREADBOARD

SCHEMATIC OF GRAYMARK 808 POWERED BREADBOARD SCHEMATIC OF GRAYMARK 808 POWERED BREADBOARD 1a white SW1 white 2a TP1 blue TP2 black blue TP3 TP4 yellow TP5 yellow TP6 4 3 8 7 + D1 D2 D5 D6 C1 R1 TP8 Q1 R3 TP12 2 TP18 U2-0-15V C8 9 C2 + TP15 C5 R12

More information

Physics 335 Lab 1 Intro to Digital Logic

Physics 335 Lab 1 Intro to Digital Logic Physics 33 Lab 1 Intro to Digital Logic We ll be introducing you to digital logic this quarter. Some things will be easier for you than analog, some things more difficult. Digital is an all together different

More information

Exercise 6. The Boost Chopper EXERCISE OBJECTIVE DISCUSSION OUTLINE DISCUSSION. The boost chopper

Exercise 6. The Boost Chopper EXERCISE OBJECTIVE DISCUSSION OUTLINE DISCUSSION. The boost chopper Exercise 6 The Boost Chopper EXERCISE OBJECTIVE When you have completed this exercise, you will be familiar with the operation of the boost chopper. DISCUSSION OUTLINE The Discussion of this exercise covers

More information

Choosing the Appropriate Component from Data Sheet Ratings and Characteristics

Choosing the Appropriate Component from Data Sheet Ratings and Characteristics Technical Information Choosing the Appropriate Component from Data Sheet Ratings and Characteristics Choosing the Appropriate Component from Data Sheet Ratings and Characteristics This application note

More information

Current sensor by IZM

Current sensor by IZM Current sensor by IZM TYPICAL APPLICATIONS Current measurement in commutation cell Monitoring of switching behavior of Si, SiC, GaN, or similar semiconductors Measuring of current pulses Analysis of power

More information

Use the fixed 5 volt supplies for your power in digital circuits, rather than the variable outputs.

Use the fixed 5 volt supplies for your power in digital circuits, rather than the variable outputs. Physics 33 Lab 1 Intro to Digital Logic We ll be introducing you to digital logic this quarter. Some things will be easier for you than analog, some things more difficult. Digital is an all together different

More information

Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering

Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering MEMS1082 Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Bipolar Transistor Construction npn BJT Transistor Structure npn BJT I = I + E C I B V V BE CE = V = V B C V V E E Base-to-emitter

More information

Exercise 1: EXERCISE OBJECTIVE DISCUSSION. a. circuit A. b. circuit B. Festo Didactic P0 75

Exercise 1: EXERCISE OBJECTIVE DISCUSSION. a. circuit A. b. circuit B. Festo Didactic P0 75 Exercise 1: EXERCISE OBJECTIVE DISCUSSION a. circuit A. b. circuit B. Festo Didactic 91564-P0 75 individual diodes are designated D instead of CR, with the diode circle symbol omitted.) The input terminals

More information

4 Transistors. 4.1 IV Relations

4 Transistors. 4.1 IV Relations 4 Transistors Due date: Sunday, September 19 (midnight) Reading (Bipolar transistors): HH sections 2.01-2.07, (pgs. 62 77) Reading (Field effect transistors) : HH sections 3.01-3.03, 3.11-3.12 (pgs. 113

More information

Advances in Averaged Switch Modeling

Advances in Averaged Switch Modeling Advances in Averaged Switch Modeling Robert W. Erickson Power Electronics Group University of Colorado Boulder, Colorado USA 80309-0425 rwe@boulder.colorado.edu http://ece-www.colorado.edu/~pwrelect 1

More information

Lecture 23 Review of Emerging and Traditional Solid State Switches

Lecture 23 Review of Emerging and Traditional Solid State Switches Lecture 23 Review of Emerging and Traditional Solid State Switches 1 A. Solid State Switches 1. Circuit conditions and circuit controlled switches A. Silicon Diode B. Silicon Carbide Diodes 2. Control

More information

Solid-State Digital Counter H7AN

Solid-State Digital Counter H7AN Solid-State Digital Counter Preset and Totalizing Counters with Up to 8-Digit LED Displays Draw-out construction allows setting, servicing without disconnecting wiring Choose from selectable UP/DOWN or

More information

Analog Electronic Circuits Lab-manual

Analog Electronic Circuits Lab-manual 2014 Analog Electronic Circuits Lab-manual Prof. Dr Tahir Izhar University of Engineering & Technology LAHORE 1/09/2014 Contents Experiment-1:...4 Learning to use the multimeter for checking and indentifying

More information

Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward

Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward SEMICONDUCTOR PHYSICS-2 [Transistor, constructional characteristics, biasing of transistors, transistor configuration, transistor as an amplifier, transistor as a switch, transistor as an oscillator] Transistor

More information

Courseware Sample F0

Courseware Sample F0 Electric Power / Controls Courseware Sample 85822-F0 A ELECTRIC POWER / CONTROLS COURSEWARE SAMPLE by the Staff of Lab-Volt Ltd. Copyright 2009 Lab-Volt Ltd. All rights reserved. No part of this publication

More information

Sample Exam Solution

Sample Exam Solution Session 44; 1/6 Sample Exam Solution Problem 1: You are given a single phase diode rectifier, as shown below. Do the following: L d I s v (t) s L s C d V d Load : 310V Xs : 0.4ohm at 400 Hz Vspk : 360V

More information

Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A

Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A VS-GP5SA6S Insulated Gate Bipolar Transistor Trench PT IGBT, 6 V, 5 A Proprietary Vishay IGBT Silicon L Series SOT-7 PRIMARY CHARACTERISTICS V CES 6 V I C DC () 39 A at 9 C V CE(on) typical at A, 5 C.

More information

"High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A

High Side Chopper IGBT SOT-227 (Trench IGBT), 100 A "High Side Chopper" IGBT SOT-227 (Trench IGBT), A FEATURES Trench IGBT technology VS-GTNA2UX SOT-227 PRODUCT SUMMARY V CES 2 V I C DC A at 7 C V CE(on) typical at A, 25 C 2.36 V Package SOT-227 Circuit

More information

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (3. kw total) with T C = 90 C A RMS T J 25

More information

Practical 2P12 Semiconductor Devices

Practical 2P12 Semiconductor Devices Practical 2P12 Semiconductor Devices What you should learn from this practical Science This practical illustrates some points from the lecture courses on Semiconductor Materials and Semiconductor Devices

More information

The Tuned Circuit. Aim of the experiment. Circuit. Equipment and components. Display of a decaying oscillation. Dependence of L, C and R.

The Tuned Circuit. Aim of the experiment. Circuit. Equipment and components. Display of a decaying oscillation. Dependence of L, C and R. The Tuned Circuit Aim of the experiment Display of a decaying oscillation. Dependence of L, C and R. Circuit Equipment and components 1 Rastered socket panel 1 Resistor R 1 = 10 Ω, 1 Resistor R 2 = 1 kω

More information

Concepts to be Covered

Concepts to be Covered Introductory Medical Device Prototyping Analog Circuits Part 2 Semiconductors, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Covered Semiconductors

More information

Understanding & Using The HA2500's Sub Drives

Understanding & Using The HA2500's Sub Drives Understanding & Using The HA2500's Sub Drives When horizontal drive to the horizontal output stage is missing, expensive horizontal output stage components cannot be determined good or bad. If horizontal

More information

Characteristic Impedance

Characteristic Impedance Characteristic Impedance This worksheet and all related files are licensed under the Creative Commons Attribution License, version 1.0. To view a copy of this license, visit http://creativecommons.org/licenses/by/1.0/,

More information

Box chopper amplifier BOE

Box chopper amplifier BOE Box chopper amplifier BOE Description The box chopper amplifier is an always energised Pulse-Wide-Modulated (PWM) H-Bridge for to drive inductive loads with bipolar current in according to an analogue

More information

LABORATORY 4. Palomar College ENGR210 Spring 2017 ASSIGNED: 3/21/17

LABORATORY 4. Palomar College ENGR210 Spring 2017 ASSIGNED: 3/21/17 LABORATORY 4 ASSIGNED: 3/21/17 OBJECTIVE: The purpose of this lab is to evaluate the transient and steady-state circuit response of first order and second order circuits. MINIMUM EQUIPMENT LIST: You will

More information

Tutorial 5 - Isolated DC-DC Converters and Inverters

Tutorial 5 - Isolated DC-DC Converters and Inverters University of New South Wales School of Electrical Engineering and Telecommunications Tutorial 5 - Isolated DC-DC Converters and Inverters Flyback Converter N2 3 1. A dc-dc flyback converter has a turns

More information

PD IRG4PC50WPbF. INSULATED GATE BIPOLAR TRANSISTOR Features. n-channel TO-247AC. 1

PD IRG4PC50WPbF. INSULATED GATE BIPOLAR TRANSISTOR Features. n-channel TO-247AC.  1 INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power

More information