Application Note DIP-Smart Power Module Test Board IV
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1 Application Note 903 May, 003 DIP-Smart Power Module Test Board IV SPM TEST BOARD for use in Isolated Inverter GND (Interface using Optocouplers with Two Isolated Power Supplies)
2 Schematics and External Interface Diagram Primary 5V U3 U U U8 U7 U6 U5 Test Board Secondary 5V Secondary 5V REG VIN VOUT C5 C GND C 33uF 35V Secondar 5V Secondary GND Secondar 5V R9 D3 0 /4W N4937 () V B(W) () V CC(WH) R3 C6 560 /8W C4 C uF 04 (0) IN (WH) C3 35V (3) V S(W) Secondar 5V R8 D 0 /4W N4937 (8) V B(V) R (7) V CC(VH) 70 R /8W C9 C8 (6) 560 /8W C7 (H) 04 33uF 04 (5) IN (VH) C 35V (9) V S(V) R4 D 0 /4W N4937 (3) V B(U) () V CC(UH) R C7 560 /8W C8 33uF C6 04 () IN 35V 04 (UH) C (4) V R S(U) 56 /8W Secondar 5V R0 R48 (0) R SC 3.9K /8W 390 /8W (9) C SC R5 R6 R7 (8) C C9 FOD /8W /8W /8W 0 C5 (7) V FO 333 (6) (L) (5) IN (WL) (4) IN (VL) (3) IN (UL) () (L) C0 C C C () V CC(L) C5 C8 0uF 04 35V J C4 00uF 6V Primary GND CN Secondary 5V Secondary GND U9 Dip-SPM VB VCC OUT IN VS VB VCC OUT IN VS VB VCC OUT IN VS C(SC) OUT(WL) C(FOD) VFO IN(WL) IN(VL) OUT(VL) IN(UL) (L) VCC OUT(UL) UH VH WH UL VL WL Fo 5V GND 5V THERMISTOR UH VH WH UL VL WL Fo 5V GND 5V P (3) W (3) V (30) U (9) N W (8) N V (7) N U (6) V TH (5) R TH (4) Gating UH 680Ω /8W Gating VH 680Ω /8W Gating WH 680Ω /8W Gating UL 680Ω /8W Gating VL 680Ω /8W Gating WL Fault 0kΩ /8W 0 Primary 5V Secondary 5V Primary GND Secondary GND P P W W V V M C0 0.uF 630V U U N N C P U Vdc Note). Dead time of > 0µs would be required in order to prevent a inverter-leg from being arm-short. It depends on the optocoupler s characteristics. In this board, a slow and low-cost type of optocoupler is selected.. Two isolated power supplies are required. For the primary side: +5V for CPU operation. For the secondary side: +5V for SPM operation. +5V is generated by the use of the voltage regulator of7805
3 PCB Map Power Connection Terminals DC-Link Input Connection (P, N) Motor Input Connection (U, V, W) DC-Link Film Capacitor SPM Bias Supply (5V)Terminals Electrolytic Capacitor for Bias Supply Photocouplers Bootstrap Components Fault-Out signal Connection Bias Supply Connection for Photocoupler Primary Side Driving Low-Side Input Connection from CPU High-Side Input Connection from CPU Signal Connection Terminals 3
4 External Connection Signal Interface Signal Interface Power Connection High-Side Input Signal from CPU (Phase U) High-Side Input Signal from CPU (Phase V) 3 High-Side Input Signal from CPU (Phase W) 4 Low-Side Input Signal from CPU (Phase U) 5 Low-Side Input Signal from CPU (Phase V) 6 Low-Side Input Signal from CPU (Phase W) 7 No connection 8 Fault-Out Signal to CPU 9 Bias Supply (+5V) Terminal for Photo coupler Primary Side Driving 0 Bias Supply GroundTerminal for Photo coupler Primary Side Driving SPM Bias Supply +5V Terminal SPM Bias Supply Ground Terminal P Positive DC Link Input Connection N Negative DC Link Input Connection U Motor Input Connection (Phase U) V Motor Input Connection (Phase V) W Motor Input Connection (Phase W) 4
![84[mm] (a) Top Side](/docs-images/88/115592290/images/5-1.jpg "View (b) Bottom Side")
5 Photograph of Assembled PCB 76[mm] 84[mm] (a) Top Side View (b) Bottom Side View 5
6 Part List Part No. Rating Characteristics Definition R 560Ω, /8W Carbon Film Resistor (5%) Pull-Up Resistor (UH) R 560Ω, /8W Carbon Film Resistor (5%) Pull-Up Resistor (VH) R3 560Ω, /8W Carbon Film Resistor (5%) Pull-Up Resistor (WH) R4 0Ω, /4W Carbon Film Resistor (5%) Bootstrap Resistor (Phase U) R5 560Ω, /8W Carbon Film Resistor (5%) Pull-Up Resistor (UL) R6 560Ω, /8W Carbon Film Resistor (5%) Pull-Up Resistor (VL) R7 560Ω, /8W Carbon Film Resistor (5%) Pull-Up Resistor (WL) R8 0Ω, /4W Carbon Film Resistor (5%) Bootstrap Resistor (Phase V) R9 0Ω, /4W Carbon Film Resistor (5%) Bootstrap Resistor (Phase W) R0 3.9kΩ, /8W Carbon Film Resistor (5%) Low-Pass-Filter for Current Sensing R 56Ω, /8W Carbon Film Resistor (5%) Current Sensing Resistor R 70Ω, /8W Carbon Film Resistor (5%) Pull-Up Resistor (Fault-Out) R48 390Ω, /8W Carbon Film Resistor (5%) Series Resistor for Csc C.nF Ceramic Capacitor High-Side Pull-Up Capacitor (Phase U) C.nF Ceramic Capacitor High-Side Pull-Up Capacitor (Phase V) C3.nF Ceramic Capacitor High-Side Pull-Up Capacitor (Phase W) C5 0µF, 35V Electrolytic Capacitor +5V Bias Voltage Source Capacitor C6 00nF Ceramic Capacitor Bypass Capacitor for Bootstrap Supply (Phase U) C7 33µF, 35V Electrolytic Capacitor Bootstrap Capacitor (Phase U) C8 00nF Ceramic Capacitor Bypass Capacitor for Bootstrap Supply (Phase V) C9 33µF, 35V Electrolytic Capacitor Bootstrap Capacitor (Phase V) C0 470pF Ceramic Capacitor Low-Side Pull-Up Capacitor (Phase U) C 470pF Ceramic Capacitor Low-Side Pull-Up Capacitor (Phase V) C 470pF Ceramic Capacitor Low-Side Pull-Up Capacitor (Phase W) C3 00nF Ceramic Capacitor Bypass Capacitor for Bootstrap Supply (Phase W) C4 33µF, 35V Electrolytic Capacitor Bootstrap Capacitor (Phase W) C5 33nF Ceramic Capacitor Capacitor for Selection for Fault Out Duration C6 00nF Ceramic Capacitor +5V Bias Voltage Bypass Capacitor (WH) C7 00nF Ceramic Capacitor +5V Bias Voltage Bypass Capacitor (VH) C8 00nF Ceramic Capacitor +5V Bias Voltage Bypass Capacitor (UH) C9 nf Ceramic Capacitor Low-Pass-Fault for Current Sensing C0 0.µF, 630V Film Capacitor Snubber Capacitor to Suppress the Spike-Voltage C 00nF Ceramic Capacitor +5V Bias Voltage Bypass Capacitor C µf Monolithic Capacitor +5V Bias Voltage Bypass Capacitor C3 nf Ceramic Capacitor Pull-Up Capacitor of Fault-Out Signal C4 00µF, 6V Electrolytic Capacitor +5V Bias Voltage Source Capacitor (for the Primary Side) C5 0µF, 35V Electrolytic Capacitor +5V Bias Voltage Source Capacitor D A, 600V Fast Recovery Diode (N4937) Bootstrap Diode (Phase U) D A, 600V Fast Recovery Diode (N4937) Bootstrap Diode (Phase V) D3 A, 600V Fast Recovery Diode (N4937) Bootstrap Diode (Phase W) 6
7 Part List Part No. Rating Characteristics Definition U B Photocoupler () Photocoupler for Signal Interface (UH) U B Photocoupler () Photocoupler for Signal Interface (VH) U3 B Photocoupler () Photocoupler for Signal Interface (WH) U4 - DIP-SPM See the datasheet U5 B Photocoupler () Photocoupler for Signal Interface (UL) U6 B Photocoupler () Photocoupler for Signal Interface (VL) U7 B Photocoupler () Photocoupler for Signal Interface (WL) U8 B Photocoupler () Photocoupler for Signal Interface (Fault-Out) REG 00mA Voltage Regulator (KA78L05A) 3-Terminal Positive Voltage Regulator 7
8 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E CMOS TM EnSigna TM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL PONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein: Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms FACT FACT Quiet Series FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I C Across the board Around the world The Power Franchise Programmable Active Droop ImpliedDisconnect ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC â OPTOPLANAR PACMAN POP Power47 PowerTrench â QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER â SMART START A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Datasheet Identification Product Status Definition SPM Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic â TruTranslation UHC UltraFET â VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development Specifications may change in any manner without notice This datasheet contains preliminary data, and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only Rev I
Application Note DIP-Smart Power Module Test Board V
Application Note 90 May, 00 DIP-Smart Power Module Test Board V SPM TEST BOARD for use in Isolated Inverter (Interface using Optocouplers with Five Isolated Power Supplies) Schematics and External Interface
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FDD V P-Channel PowerTrench MOSFET 40V, 32A, 27mΩ Features
FDD4685 V P-Channel PowerTrench MOSFET V, 3A, 7mΩ Features Max r DS(on) = 7mΩ at V GS = V, I D = 8.4A Max r DS(on) = 35mΩ at V GS = 4.5V, I D = 7A High performance trench technology for extremely low r
FDH15N50 / FDP15N50 / FDB15N50
15A, V,.38 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as PFC Boost Two-Switch Forward Converter Single Switch Forward Converter Flyback Converter Buck Converter
Features SLEW VDD. TA=25 o C unless otherwise noted
FDG90D Slew Rate Control Driver IC for P-Channel MOSFETs April 2002 FDG90D General Description The FDG90D is specifically designed to control the turn on of a P-Channel MOSFET in order to limit the inrush
FJAF6810. h FE2 V CE =5V, I C =6A. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case 2.08 C/W
FJAF68 FJAF68 High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V High Switching Speed : (typ.) =.µs For Color Monitor TO-3PF.Base 2.Collector 3.Emitter
Features. = 25 C unless otherwise noted
Dual N & P-Channel PowerTrench MOSFET October 4 General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor s advanced PowerTrench
FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11mΩ General Description
E N FDD878/FDU878 N-Channel PowerTrench MOSFET 5V, 35A, mω General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous
GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION The 4N29, 4N30, 4N3, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N3 4N32 4N33 FEATURES High sensitivity to low input
SOT-23 Mark: 62V / 62W / 62X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
G S D J210 J211 J212 TO-92 This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process
Features. (Note 1b) 1.2. (Note 1c) 1.0. (Note 1c) 125
NDS97 V P-Channel PowerTrench MOSFET May NDS97 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Transient Suppressors Features Glass passivated junction. 600W Peak Pulse
FDP75N08A 75V N-Channel MOSFET
FDP75N08A 75V N-Channel MOSFET Features 75A, 75V, R DS(on) = 0.011Ω @ = 10 V Low gate charge ( typical 145nC) Low Crss ( typical 86pF) Fast switching Improved dv/dt capability Description July 2006 UniFET
MCT6, MCT61, MCT62 Dual Phototransistor Optocouplers
MCT6, MCT6, MCT62 Dual Phototransistor Optocouplers Features Two isolated channels per package Two packages fit into a 6 lead DIP socket Choice of three current transfer ratios Underwriters Laboratory
NC7WZ17 TinyLogic UHS Dual Buffer with Schmitt Trigger Inputs
April 2006 NC7WZ17 TinyLogic UHS Dual Buffer with Schmitt Trigger Inputs General Description The NC7WZ17 is a dual buffer with Schmitt trigger inputs from Fairchild s Ultra High Speed Series of TinyLogic
FDP3651U N-Channel PowerTrench MOSFET 100V, 80A, 15mΩ Features
FDP365U N-Channel PowerTrench MOSFET V, 8A, 5mΩ Features r DS(on) =3 mω(typ.), V GS = V, I D = 4A Q g(tot) =49 nc(typ.), V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse/Repetitive
ISL9V2540S3S EcoSPARK TM N-Channel Ignition IGBT 250mJ, 400V Features
ISL9V24S3S EcoSPARK TM N-Channel Ignition IGBT 2mJ, 4V Features! SCIS Energy = 2mJ at T J = 2 o C! Logic Level Gate Drive Applications! Automotive Ignition Coil Driver Circuits! Coil - On Plug Applications
FSB50450S Smart Power Module (SPM)
FSB50450S Smart Power Module (SPM) Features 500V 3.0A 3-phase FRFET inverter including high voltage integrated circuit (HVIC) 3 divided negative dc-link terminals for inverter current sensing applications
Features. 13 A, 30 V. R DS(ON) = 11.3 V GS = 10 V R DS(ON) = 14.4 V GS = 4.5 V. RoHS Compliant. Symbol Parameter Ratings Units
3V N-Channel Fast Switching PowerTrench MOSFET February 27 tm General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either
MID400 AC Line Monitor Logic-Out Device
MID400 AC Line Monitor Logic-Out Device Features Direct operation from any line voltage with the use of an external resistor. Externally adjustable time delay Externally adjustable AC voltage sensing level
FDP V, 80A, 2.7mΩ. N-Channel PowerTrench MOSFET. FDP8441 N-Channel PowerTrench MOSFET. Applications. Features.
M E N FDP844 N-Channel PowerTrench MOSFET 4V, 8A, 2.7mΩ Features Typ r DS(on) = 2.mΩ at V GS = V, I D = 8A Typ Q g() = 25nC at V GS = V Low Miller Charge Low Q rr Body Diode UIS Capability (Single Pulse
FCAS50SN60 Smart Power Module for SRM
FCAS50SN60 Smart Power Module for SRM Features Very low thermal resistance due to using DBC 600V-50A single-phase asymmetric bridge IGBT converter for SRM drive including control ICs for gate driving and
FDB V N-Channel PowerTrench MOSFET
FDB264 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize
FQPF12N60CT 600V N-Channel MOSFET
FQPF12N60CT 600V N-Channel MOSFET Features 12A, 600V, R DS(on) = 0.65Ω @ = 10 V Low gate charge ( typical 48 nc) Low Crss ( typical 21 pf) Fast switching 100% avalanche tested Improved dv/dt capability
FJE3303 High Voltage Fast-Switching NPN Power Transistor
FJE3303 High oltage Fast-Switching NPN Power Transistor High oltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Regulator TO-26. Emitter 2.Collector 3.Base Absolute Maximum
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features 9.5A, 600V, R DS(on) = 0.73Ω @ = 10 V Low gate charge ( typical 44 nc) Low Crss ( typical 18 pf) Fast switching 100% avalanche tested Improved dv/dt
Features. TA=25 o C unless otherwise noted
3V P-Channel PowerTrench MOSFET October 2 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management
FFPF60B150DS. 120 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +150 C
FFPF6B5DS FFPF6B5DS Features High voltage and high reliability High speed switching Modulation diode / Damper diode Low conduction loss Modulation diode / Damper diode TO-22F Applications (Modulation +
ANODE 2 CATHODE ANODE 1
ISL9KP3 A, V Stealth Dual Diode General Description The ISL9KP3 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth family exhibits low
Data Sheet January Features. Packaging
RHRP4, RHRP6 Data Sheet January 22 A, 4V - 6V Hyperfast Diodes The RHRP4 and RHRP6 are hyperfast diodes with soft recovery characteristics ( < 3ns). They have half the recovery time of ultrafast diodes
Data Sheet January Features. Packaging. 30 A (T C = 145 o C) Repetitive Peak Surge Current... I FRM
RURP32 Data Sheet January 22 3A, 2V Ultrafast Diode The RURP32 is an ultrafast diode (t rr < 45ns) with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride
FDP V, 80A, 3.1mΩ. N-Channel PowerTrench MOSFET. FDP8442 N-Channel PowerTrench MOSFET. Features. Applications. June 2007
M E N FDP8442 N-Channel PowerTrench MOSFET 4V, 8A, 3.mΩ Features Applications June 27 Typ r DS(on) = 2.3mΩ at V GS = V, I D = 8A Automotive Engine Control Typ Q g() = 8nC at V GS = V Powertrain Management
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Features Glass passivated junction. 10 W Peak Pulse Power capability on