Benefits. Applications
|
|
- Gladys Bruce
- 5 years ago
- Views:
Transcription
1 LTEA Pro/5G LNA IC DZA0004 Key Features Low Noise Amplification in 3G/4G/LTE/5G Bands in Frequency Range 1500 to 700 MHz 1 db Gain (± 1.0 db) from 1500 to 700 MHz 0.4 db Noise Figure (NF) Typical Operating Current = 40 ma (Pdiss = 0.13 Wdc 3.3 Vdc) Operating Current = 65 ma (Pdiss = 0.35 Wdc 5 Vdc) Single Power Supply Input (3.3 or 5 Vdc) VBIAS can power the device up and down during operation Fastest InClass TurnOn time 0.05 μs Fastest InClass TurnOff time 0.05 μs Compliant with 3GPP Releases 11 through 14 for worldwide FDD and TDD operation Compliant with IEEE 80.11a/b/g/n/ac/af/ax WiFi/WLAN standards Integrated I/O matching reduces external SMT passive requirements and reduces landed product footprint Input Return Loss (IRL) and Output Return Loss (ORL) are bestinclass without external to package matching. LeadFree xx0.75 mm PDFN8 with Exposed Pad (EP) SMT Plastic Package Benefits Integrated I/O matching reduces external SMT passive requirements and reduces landed product footprint Input Return Loss (IRL) and Output Return Loss (ORL) are bestinclass without external to package matching User controllable current dissipation versus linearity A direct dropin replacement for narrowband LNA MMICs offered in the PDFN8 with EP Package Applications 3GPP Release 11 through 14 Worldwide Compliant BTS and HetNet Class Receivers LTEA Pro Antenna Arrays and HetNet Small Cell Receivers IEEE 80.11a/b/g/n/ac/af/ax WiFi/WLAN standard compliant CPE and Infrastructure Product Description Duet Microelectronic s DZA000X Family of LNA MMICs perform ultralow noise amplification with gain and linearity of all 31 cellular frequency division duplex (FDD) uplink (UL) bands and all 16time division duplex (TDD) bands defined for LTEAPro by 3GPP and TriBand WiFi/WLAN signals transmitted in accordance with (IAW) IEEE80.11a/b/g/n/ac/ah standards from 900 to 98 MHz, 400 to MHz, and between 4.9 and 5.95 GHz. The DZA0004 combines low NF, high linearity, high gain, bestinclass return loss in the 1500 to 700 MHz frequency range with exceptional turnon/turnoff times, flexible input voltage operation, low total supply current, and high electrostatic discharge (ESD) standoff ratings.
2 Functional Block Diagram Pin 1 Reference Mark Vbias 1 8 RF In 7 RF Out 3 6 Shut Down 4 5 Backside Paddle RF/DC GND Absolute Minimum and Maximum Ratings Parameter Min Max Units Supply 0 6 Vdc RF Power at the Input 10 dbm Case Operating Temperature Range, T C C Storage Temperature C Soldering Temperature 60 C Soldering Time 5 seconds Stresses more than the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Operating Ranges Parameter Min Typ Max Units RF Input/Output Frequency MHz Supply Voltage V DC Case Temperature, T C C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the Electrical Specification.
3 Electrical Specifications (Ta = 5 C, Vdd = 5 VDC, f = 1500 to 700 MHz, 50 Ω I/O) RF Input Parameter Min Typ Max Units Conditions RF Input Power 10 0 dbm Operating, F = 1500 to 700 MHz Receive F = 1500 to 700 MHz RF Gain 1 db LNA BYPASS OFF; See Note 1 Gain Flatness 1 / db Calculated from Linear Best Fit, 1500 to 700 MHz Noise Figure (NF) 0.4 db F = 1500 to 700 MHz RF Output Level 10 dbm Input Return Loss db Output Return Loss db OP1dB 3 dbm OIP3 30 dbm ±1.5 dbm Rx MER db Rx EVM %RMS LNA ENABLE ON Time, T ON μs Utilizing VBIAS LNA ENABLE OFF Time, TOFF μs Utilizing VBIAS Supply Current 40 ma Vdd = 3.3 Vdc Supply Current 65 ma Vdd = 5 Vdc ±0.5 dbm; evaluation board circuit in operation including internal & external AGC circuit Rx Input Power 60 to 10 dbm; See Note Rx Input Power 60 to 10 dbm; See Note ESD HBM MM Package Moisture Sensitivity Level (MSL) 1 Notes: All specifications as measured using Duet evaluation assembly. 1. Measured in application circuit.. Measured using OFDM and 64QAM. V HBM (JESDA114) MM (JESDA115) Measured pintopin or pintoground PDFN8 with exposed pad (EP), SMT, x x 0.75 mm (L x W x H) maximum dimensions, 8pads
4 Package Dimensions DZA0004 REV 1 DESCRIPTION RELEASE REVISIONS D NEXT ASSY USED ON UNLESS OTHERWISE SPECIFIED ALL DIMENSIONS AND TOLERAES ARE IN IHES TOLERAES FRACTIONS 3 PLACE DECIMALS PLACE DECIMALS ANGLES CONTRACT NO. PREPARED CHECKED ENG W. Palmer dmicroelectronics uet APPLICATION MATERIAL FINISH ENG A SIZE SCALE FSCM NO. D000 SH
5 Pad Configuration Pin 1 Reference Mark Vbias 1 8 RF In 7 RF Out 3 6 Shut Down 4 5 Backside Paddle RF/DC GND Pad Number Pad Name Description 1 VBIAS Sets the bias point for the device. RFIN Singleended (SE) RF Input pin. A DC Block is required. 6 7 Shut Down RF Out Plus DC Bias Voltage >1.17Vdc turns off the device. If the pin is pulled to ground or driven with a voltage less than 0.63V, then the device will operate under LNA ON state. SE RF Output pin. DC bias will also need to be injected through a RF bias choke/ inductor for operation. 3, 4, 5, 8 N/C No electrical connection. Provide grounded land pads for PCB mounting integrity. 9 Exposed Pad (EP) Notes: All specifications as measured using Duet evaluation assembly. 1. Duet recommends connecting unused pads to GROUND.. The exposed pad (EP) centered on the package bottom RF, DC, and thermal GROUNDS. RF/DC ground. Use recommended via pattern to minimize inductance and thermal resistance; see PCB Mounting Pattern for suggested footprint.
6 Ordering Information Order Number DZA0004P0 DZA0004V0 DZA0004PCBA Temperature Range 0 to 100 C 0 to 100 C Package Description Plastic, dualflat noleads (PDFN) 8pad xx0.75 mm with exposed pad (EP) Plastic, dualflat noleads (PDFN) 8pad xx0.75 mm with exposed pad (EP) 40 to 85 C 50Ω I/O Evaluation Board (EVB) Component Packaging Gel Pak, 1 to 100 each 1500 each, T&R EVB Kit with five (5) piece IC sample ESD bag Duet Microelectronics 575 Route 8, Suite 100 Raritan, NJ USA DUET (3838) info@duetmicro.com Important Notice Duet Microelectronics LLC reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Data Sheets are subject to change prior to a product s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, Duet Microelectronics assumes no responsibilities for inaccuracies. Duet Microelectronics strongly urges customers to verify that the information they are using is current before placing orders. Warning Duet Microelectronics products are not intended for use in life support appliances, devices or systems. Use of a Duet Microelectronics product in any such application without written consent is prohibited.
DOCSIS 3.1 Upstream Amplifier IC
DOCSIS 3.1 Upstream Amplifier IC DMA2318 Key Features Provides pushpull amplifier performance as a 75Ohm SingleEnded I/O amplifier IC (no baluns required) Compliant to DOCSIS 3.1 PHY to >200 MHz upstream
More informationAWL /5 GHz a/b/g WLAN Power Amplifier Data Sheet - Rev 2.1
FEATURES 3.% EVM @ POUT = +19 dbm with IEEE 2.11a 6 QAM OFDM at 5 Mbps 3% EVM @ POUT = +2 dbm with IEEE 2.11g 6 QAM OFDM at 5 Mbps dbc 1st Sidelobe, 55 dbc 2nd sidelobe ACPR at +23 dbm with IEEE 2.11b
More informationHMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram
7 Typical Applications The is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios Functional Diagram v. Electrical Specifications T A = + C, Rbias
More informationFeatures. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
v4.1217 HMC49LP4E Typical Applications This amplifier is ideal for use as a power amplifier for 3.3-3.8 GHz applications: WiMAX 82.16 Fixed Wireless Access Wireless Local Loop Functional Diagram Features
More informationADA1200 Linear Amplifier PRELIMINARY DATA SHEET - Rev 1.3
Linear Amplifier FEATURES 12 db Gain 50 to 1000 MHz Frequency Range Noise Figure: 2.3 db Single +5 V Supply Small SOT-89 Package RoHS Compliant/Lead-free APPLICATIONS Low Noise Amplifier for CATV Set-Top
More informationFeatures OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
More informationAND0281. AND b/g/n/ac Power Amplifier, LNA and Tx/Rx/BT Switch PRELIMINARY DATA SHEET - Rev 1.2
FEATURES Supports 802.11ac high-data rate standard Fully integrated FEIC including 2 GHz Power Amplifier, Low Noise Amplifier with Bypass mode and SP3T TX/RX/BT Switch 1.8% Dynamic EVM @ POUT = +18 dbm
More informationABA GHz Balanced Low Noise Linear Amplifier ADVANCED PRODUCT INFORMATION - Rev 0.0
1.2 GHz Balanced Low Noise Linear Amplifier FEATURES 15 db Gain +5 V or +8 V Nominal Supply Voltage High Linearity Low Noise Figure: 2.7 db (typ.) Characterized at +25 dbmv output power Wide Band operation
More informationAWL GHz b/g/n WLAN PA, LNA, and RF Switch Data Sheet - Rev 2.0
. GHz.11b/g/n WLAN PA, LNA, and RF Switch Data Sheet Rev. FEATURES 3.3 % EVM @ POUT = +1 dbm with IEEE.11g QAM OFDM at 5 Mbps 75 ma Transmit Path Current Consumption at POUT = +1 dbm SP3T RF Switch to
More informationSURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,
v2.617 AMPLIFIER, - 12 GHz Typical Applications The is ideal for use as a power amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use Features Saturated
More informationFeatures. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz
Typical Applications The HMC62LP / HMC62LPE Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C 3 I Test Instrumentation Fiber Optics Functional Diagram Features
More informationFeatures. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]
Typical Applications Features The HMC196LP3E is suitable for: Point-to-Point & VSAT Radios Test Instrumentation Military & Space Functional Diagram High Output Power: 12 dbm Low Input Power Drive: -2 to
More informationGaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049
ACG ACG ACG FEATURES Low noise figure:. db PdB output power:. dbm PSAT output power: 7. dbm High gain: db Output IP: 9 dbm Supply voltage: VDD = 7 V at 7 ma Ω matched input/output (I/O) -lead mm mm SMT
More informationFeatures. = +25 C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications Functional Diagram The HMC36LP3 / HMC36LP3E is ideal for: Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF
More informationFeatures. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V
v.7 HMCLC Typical Applications The HMCLC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
More informationAWL a/n/ac Power Amplifier, LNA and Tx/Rx Switch DATA SHEET - Rev 2.0
FEATURES Supports emerging 802.11ac high-data rate standard Fully integrated FEIC including 5GHz Power Amplifier, Low Noise Amplifier with Bypass mode and SP2T TX/RX Switch
More informationFeatures. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*
Typical Applications The HMC637LP5(E) wideband PA is ideal for: Features P1dB Output Power: +29 dbm Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional
More informationHMC486LP5 / 486LP5E LINEAR & POWER AMPLIFIERS - SMT. SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7-9 GHz. Typical Applications.
v2. Typical Applications The HMC486LP5(E) is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use Features Saturated Power: +33 dbm @ 2% PAE Output IP3:
More informationFeatures. = +25 C, Vdd = +7V, Idd = 1340 ma [1]
Typical Applications The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifi er for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Space Features Saturated
More information30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC
AWB589 Data Sheet 3 ~ 12 MHz Wide-band Medium Power Amplifier MMIC 1. Product Overview 1.1 General Description AWB589, a medium power amplifier MMIC, has high linearity and high efficiency over a wide
More informationFeatures. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
More informationRoHS Compliant MAAPSS0103 V3. High Power Linear Amplifier GHz. Pin Configuration. Features. Block Diagram. Description. Ordering Information 1
Features Ideal for WiMax, MESH Network, and Linear Applications P1dB: +32 dbm Typical Small Signal Gain: 34 db Typical EVM: 2.5% at 26 dbm Linear (OFDM) P OUT Integrated Detector Lead-Free 4 mm 16 lead
More informationFeatures. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*
v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use
More informationFeatures. Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm
v1.314 Typical Applications Features The is ideal for: Test Instrumentation Microwave Radio & VSAT Telecom Infrastructure Military & Space Fiber optics Functional Diagram P1dB Output Power: +27 dbm Psat
More informationFeatures OBSOLETE. = +25 C, 50 Ohm System GHz degrees Insertion Loss 6-15 GHz 8 11 db. Return Loss (Input and Output) 6-15 GHz 7 db
v2.29 6 ANALOG PHASE SHIFTER, 1 Typical Applications The HMC538LP4 / HMC538LP4E is ideal for: Fiber Optics Military Test Equipment Functional Diagram Features Electrical Specifications, T A = +25 C, 5
More informationOBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description
v1.5 LO AMPLIFIER,.5-2.7 GHz Typical Applications The is ideal for: PCS / 3G Infrastructure Base Stations & Repeaters WiMAX & WiBro ISM & Fixed Wireless Functional Diagram Features Input IP3: +28 dbm Low
More informationFeatures. = +25 C, Vdd 1, 2, 3 = +3V
v.11 HMC6LC AMPLIFIER, 6-2 GHz Typical Applications The HMC6LC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military
More informationFeatures. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
More informationFeatures. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC7LP5E POWER AMPLIFIER,.2
More informationFeatures. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain
Typical Applications Functional Diagram The HMC32LP3 / HMC32LP3E is ideal for basestation receivers: GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio HMC32LP3 / 32LP3E AMPLIFIER, 00-1000 MHz Features
More informationQPA9120SR. High Gain High Linearity Driver Amplifier. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is a wideband, high gain, and high linearity driver amplifier in a low-cost, RoHS compliant 3x3 mm QFN package. With Qorvo s E-pHEMT process, this amplifier delivers exceptional performance
More informationGaAs, phemt, MMIC, Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049LP5E
ACG ACG ACG FEATURES Low noise figure:. db PdB output power:. dbm PSAT output power: 7. dbm High gain: db Output IP: 9 dbm Supply voltage: VDD = 7 V at 7 ma Ω matched input/output (I/O) -lead, mm mm LFCSP
More informationSBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block
Product Description Sirenza Microdevices SBB-389Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
More informationAWS5504 GaAs IC Negative Control SPDT Reflective Switch DC-2.0 GHz Data Sheet - Rev 2.1
GaAs IC Negative Control SPDT Reflective Switch DC2.0 GHz FEATURES High Linearity (IP3 48 dbm @ 0.9 GHz) Low Insertion Loss (0.4 db @ 0.9 GHz) 2.75 V to 3.5 to +2.75 operation Low DC Power Consumption
More informationGPS/GNSS Front-End Amplifier
EVALUATION KIT AVAILABLE MAX2678 General Description The MAX2678 GPS/GNSS front-end amplifier IC is designed for automotive and marine GPS/GNSS satellite navigation antenna modules, or for any application
More informationOBSOLETE. = +25 C, With Vdd = +5V & Vctl = 0/+5V. Parameter Frequency Min. Typ. Max. Units DC - 4 GHz GHz Attenuation Range DC - 10 GHz 10 db
Typical Applications The HMC8LP3E is ideal for: Test Equipment and Sensors ISM, MMDS, WLAN, WiMAX, WiBro Microwave Radio & VSAT Cellular Infrastructure Functional Diagram HMC8LP3E v.11 1 GaAs MMIC 1-BIT
More informationGRF4001. Preliminary. Broadband LNA/Linear Driver GHz. Product Description. Features. Applications
Product Description Features Reference: 3.3V/45mA/2.5 GHz EVB NF: 0.9 db Gain: 15.5 db OIP3: 30.5 dbm OP1dB: 16.5 dbm Flexible Bias Voltage and Current is a broadband low noise gain block designed for
More informationAWB GHz to 2.70 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1
FEATURES InGaP HBT Technology 2.5% EVM @ +28 dbm (OFDMA) 31 db Gain Integrated Step Attenuator Integrated Output Power Detector High Efficiency Low Transistor Junction Temperature Matched for a 50 Ω System
More informationFeatures = +5V. = +25 C, Vdd 1. = Vdd 2
v1.11 HMC51LP3 / 51LP3E POWER AMPLIFIER, 5-1 GHz Typical Applications The HMC51LP3(E) is ideal for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO Driver for HMC Mixers
More informationAWL /5 GHz a/b/g/n WLAN Power Amplifier Data Sheet - Rev 2.1
FEATURES. % EVM @ POUT = +1 dbm with IEEE 2.a 6 QAM OFDM at Mbps 2. % EVM @ POUT = +2 dbm with IEEE 2.g 6 QAM OFDM at Mbps - dbr ACPR 1st Sidelobe, +21 dbm, with 2.b CCK/DSSS Root Cosine Filtering, 1 Mbps
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v3.38 POWER AMPLIFIER, 2-2 GHz Typical
More information40MHz to 4GHz Linear Broadband Amplifiers
MAX26 MAX26 0MHz to GHz Linear Broadband Amplifiers General Description The MAX26 MAX26 is a family of high-performance broadband gain blocks designed for use as a PA predriver, low-noise amplifier, or
More informationAWT6132R 415 MHz CDMA 3.4V/29.5dBm
415 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module PRELIMINARY DATA sheet Rev 2.0 FEATURES InGaP HBT Technology High Efficiency 35 % CDMA Low Leakage Current (
More informationClock. Data. Enable. Upstream QPSK/16QAM Modulator. Low Pass. Filter. Transmit Enable/Disable MAC. 44 MHz. QAM Receiver with FEC SAW.
Reverse Amplifier with Step Attenuator Data Sheet Rev 2.1 FEATURES Low Cost Integrated Amplifier with Step Attenuator Attenuation Range: 058 db, adjustable in 1 db increments via a 3 wire serial control
More informationHMC468LP3 / 468LP3E v
Typical Applications 1 LSB GaAs MMIC 3-BIT DIGITAL Features The HMC468LP3 / HMC468LP3E is ideal for: Cellular; UMTS/3G Infrastructure Fixed Wireless & WLL Microwave Radio & VSAT Test Equipment Functional
More informationFeatures. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma*
v.7 HMCLH AGC AMPLIFIER, - GHz Typical Applications The HMCLH is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C I Test Instrumentation Fiber Optics Functional Diagram Features
More informationHMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description
v.112 HMC14LP3CE AMPLIFIER, 24-43. GHz Typical Applications This HMC14LP3BE is ideal for: Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems Functional
More informationADA GHz CATV Amplifier Data Sheet - Rev 2.6
1 GHz CATV Amplifier FEATURES 15 db Gain Wide Bandwidth: 50 MHz to 1 GHz High Linearity : +15 dbm IIP3 (+8 V supply) Low Distortion Low Noise Figure: 2.0 db Single +4 V to +9 V Supply SOIC-16 and SOT-89
More informationMAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C
MAAL-4.1-3. GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dbm @ 2 GHz Broadband Match Integrated
More informationFeatures. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature
v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output
More informationFeatures. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]
Typical Applications The is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C 3 I Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: + dbm Gain:
More informationFeatures. = +25 C, IF = 200 MHz, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V*
v4.1 Typical Applications The HMC685LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +35 dbm 8 db Conversion
More informationHMC457QS16G / 457QS16GE
v3.97 HMC47QS16G / 47QS16GE Typical Applications The HMC47QS16G / HMC47QS16GE is ideal for applications requiring a high dynamic range amplifi er: CDMA & W-CDMA GSM, GPRS & Edge Base Stations & Repeaters
More informationCMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver amplifier housed in a leadless
More information2 GHz to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC7950
Data Sheet FEATURES Output power for db compression (PdB): 6 dbm typical Saturated output power (PSAT): 9. dbm typical Gain: db typical Noise figure:. db typical Output third-order intercept (IP3): 6 dbm
More informationAWL5911. AWL a/n/ac 5 GHz Power Amplifer Product Definition PRELIMINARY DATA SHEET - Rev VCC1 VCC3 VCC2 GND GND GND GND GND GND PA_EN
802.11a/n/ac 5 GHz Power Amplifer Product Definition PRELIMINARY DATA SHEET Rev 1.3 FEATURES Supports 802.11ac highdata rate standard 1.8% Dynamic EVM @ POUT = 22 dbm with 802.11ac MCS9HT80 waveform, 5.0
More informationFeatures = +5V. = +25 C, Vdd 1. = Vdd 2
v7.11 HMC1LC3 POWER AMPLIFIER, - GHz Typical Applications The HMC1LC3 is ideal for use as a medium power amplifier for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO
More informationACA /870/1000 MHz CATV Push-Pull Line Amplifier Data Sheet - Rev 2.2
750/870/1000 MHz CATV PushPull Line Amplifier Data Sheet Rev 2.2 FEATURES 1 GHz Specified Performance 22 db Gain Very Low Distortion Excellent 75 Ω Input and Output Match Stable with High VSWR Load Conditions
More informationTGP2105-SM 6-18 GHz 6-Bit Digital Phase Shifter (+Vc)
Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital Phase Shifter
More information10 W, Failsafe, GaAs, SPDT Switch 0.2 GHz to 2.7 GHz HMC546LP2E
FEATURES High input P.dB: 4 dbm Tx Low insertion loss:.4 db High input IP3: 67 dbm Positive control: V low control; 3 V to 8 V high control Failsafe operation: Tx is on when no dc power is applied APPLICATIONS
More informationMonolithic Amplifier MNA-2A+ High Directivity. 0.5 to 2.5 GHz
High Directivity Monolithic Amplifier 50Ω 0.5 to 2.5 GHz The Big Deal Integrated matching, DC Blocks and bias circuits Excellent Active Directivity Operates over 2.8-5V CASE STYLE: DQ849 Product Overview
More informationDC to 1000 MHz IF Gain Block ADL5530
Data Sheet FEATURES Fixed gain of 16. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power supply 3 V or
More informationFeatures. = +25 C, Vdd = +3V
v.117 HMC3LPE Typical Applications Features The HMC3LPE is ideal for: Millimeterwave Point-to-Point Radios LMDS VSAT SATCOM Functional Diagram Low Noise Figure:. db High Gain: db Single Positive Supply:
More informationFeatures. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]
Typical Applications This is ideal for: Features Low Noise Figure: 1.8 db Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram High Gain: 19 db High
More information50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC
S-parameters (db) Data Sheet 5 ~ 4 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over
More informationParameter Min. Typ. Max. Units Frequency Range GHz
v.312 27-31. GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar & VSAT Test Equipment Functional Diagram Features Wide Gain Control
More informationTQL9093. Ultra low noise, Flat Gain LNA. Applications. Product Features. Functional Block Diagram. General Description.
Applications Repeaters / DAS Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems Product Features 0.6-4.2 GHz Operational Bandwidth Ultra low noise figure, 0.67 db
More information20 MHz to 500 MHz IF Gain Block ADL5531
20 MHz to 500 MHz IF Gain Block ADL5531 FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at
More informationParameter Min. Typ. Max. Units
v4.112 Typical Applications The is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Functional Diagram Features General Description The is a
More informationSZP-5026Z GHz 2W InGaP Amplifier
Product Description Sirenza Microdevices SZP-Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated
More informationGain Control Range db
v1.112-12 GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems X-Band Radar Test Equipment & Sensors Functional Diagram Features Wide Gain Control
More information0.5-20GHz Driver. GaAs Monolithic Microwave IC
Gain, NF / P1dB, Pout WWG A3667A A3688A UMS 667A 688A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Driver Amplifier that operates between 0.5 and 20GHz. It is designed for a wide
More information1-24 GHz Distributed Driver Amplifier
Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Description The CMD197C4 is a wideband GaAs MMIC driver amplifier housed in a leadless
More informationAnalog Devices Welcomes Hittite Microwave Corporation
Analog Devices Welcomes Hittite Microwave Corporation www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.915 GaAs MMIC 6-BIT DIGITAL Typical Applications The HMC648ALP6E is ideal for:
More information400 MHz 4000 MHz Low Noise Amplifier ADL5521
FEATURES Operation from 400 MHz to 4000 MHz Noise figure of 0.8 db at 900 MHz Including external input match Gain of 20.0 db at 900 MHz OIP3 of 37.7 dbm at 900 MHz P1dB of 22.0 dbm at 900 MHz Integrated
More informationQPB3311SR. 15 db Return Path Amplifier MHz. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
Product Overview The is an HBT single ended RF amplifier IC operating as return path amplifier capable of supporting DOCSIS 3.1 applications. This IC is designed to provide a low noise, high gain option
More informationFeatures OBSOLETE. Parameter Min. Typ. Max. Units. Frequency Range GHz Insertion Loss 5 7 db. Input Return Loss 16 db
v1.611 Typical Applications The is ideal for: EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Phase Cancellation Functional Diagram Features Low RMS Phase Error: 1.2
More informationFeatures. = +25 C, Vdd = +5V, Idd = 400mA [1]
v.61 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Features Saturated Output Power:.5 dbm @ 21% PAE High Output IP3: 34.5 dbm High Gain:.5
More informationTGA2567-SM 2 20 GHz LNA Amplifier
Product Description Qorvo s is a LNA Gain Block fabricated on Qorvo s proven.um phemt production process. The operates from 2 to 2 GHz and typically provides 19 dbm of 1dB compressed output power with
More informationFeatures. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain
Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power: dbm @ % PAE
More informationMonolithic Amplifier LEE2-6+ Surface Mount. DC to 7 GHz. The Big Deal
Surface Mount Monolithic Amplifier 50Ω DC to 7 GHz The Big Deal Low Noise figure, 2.3 db at 2 GHz Low Current, 16 ma Broadband matched CASE STYLE: MC1630-1 Product Overview (RoHS compliant) is wideband
More informationAWL GHz Wireless LAN Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4
FEATURES InGaP HBT Technology < 3.5% EVM at +25 m Output Power (+5 V Supply), with 802.11g Modulation at 54 Mbps Data Rate < 3% EVM at +21 m Output Power (+3.3 V Supply), with 802.11g Modulation at 54
More informationHMC540SLP3E v db LSB SILICON MMIC 4-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, GHz
HMC54SLP3E v.95 LSB SILICON MMIC 4-BIT DIGITAL POSITIVE CONTROL ATTENUATOR,. - 8 GHz Typical Applications Features The HMC54SLP3E is ideal for both RF and IF applications: Cellular Infrastructure Wireless
More informationTGP2107-SM 6 to 18 GHz 6-Bit Digital Phase Shifter ( V C )
TGP217-SM Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital
More informationMonolithic Amplifier MNA-6W+ High Directivity. 0.5 to 5.5 GHz
High Directivity Monolithic Amplifier 50Ω 0.5 to 5.5 GHz The Big Deal Integrated matching, DC Blocks and bias circuits Excellent Active Directivity Operates over 2.8-5V CASE STYLE: DQ849 Product Overview
More informationFeatures. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma
v2.61 Typical Applications This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram Features Low Noise Figure: 2.5 db Gain: 13 db P1dB
More informationQPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
0.15 2.8 GHz High Power GaN SP3T Switch Product Overview Qorvo s is a Single-Pole, Triple Throw (SP3T) switch fabricated on Qorvo s QGaN25 5um GaN on SiC production process. Operating from 0.15 to 2.8
More informationIF Digitally Controlled Variable-Gain Amplifier
19-2601; Rev 1; 2/04 IF Digitally Controlled Variable-Gain Amplifier General Description The high-performance, digitally controlled variable-gain amplifier is designed for use from 0MHz to 400MHz. The
More informationQPL9096 Ultra Low-Noise, Bypass LNA
General Description The is a high-linearity, ultra-low noise gain block amplifier with a bypass mode functionality integrated in the product. At. GHz, the amplifier typically provides db gain, +. dbm OIP,
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC32LC Typical Applications
More informationFeatures. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma
v2.61 Typical Applications This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram Features Low Noise Figure: 2. db High Gain: 22 db
More informationTGS SM GHz High Power SPDT Reflective Switch
- 18 GHz High Power SPDT Reflective Switch Product Overview Qorvo s is a single-pole, double-throw (SPDT) reflective switch packaged in a 4x4mm ceramic, air-cavity QFN. Fabricated on Qorvo s QGaN25 0.25um
More informationFeatures
HMC37SC7E v1.1.3-3. GHz Typical Applications The HMC37SC7E is ideal for: Cellular/PCS/3G WCS, mmds & ism Fixed Wireless & WLAN Private Land Mobile Radio Functional Diagram Features Single Supply: Vdd =
More informationMAAM Wideband Amplifier 10 MHz - 40 GHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration. Ordering Information 1,2
MAAM-1119 1 MHz - 4 GHz Rev. V2 Features 13 db Gain Ω Input / Output Match +18 dbm Output Power + V DC, 19 ma Lead-Free mm 9-lead LGA Package RoHS* Compliant and 26 C Reflow Compatible Description The
More informationFeatures OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma
7 Typical Applications The HMC667LP2(E) is ideal for: WiMAX, WiBro & Fixed Wireless SDARS & WLAN Receivers Infrastructure & Repeaters Access Points Telematics & DMB Functional Diagram v2.11 Electrical
More informationFeatures. = +25 C, Vcc = 5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Units
v2.717 MMIC AMPLIFIER, 4 - GHz Typical Applications The is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications Functional
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.41 Typical Applications The HMC649ALP6E
More informationMonolithic Amplifier MNA-5A+ High Directivity. 0.5 to 2.5 GHz
High Directivity Monolithic Amplifier 50Ω 0.5 to 2.5 GHz The Big Deal Integrated matching, DC Blocks and bias circuits Excellent Active Directivity Operates over 2.8-5V CASE STYLE: DQ849 Product Overview
More information1 MHz to 2.7 GHz RF Gain Block AD8354
Data Sheet FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply stable Noise figure: 4.2
More information