Noise induced and enhanced signal processing in nanoelectronics
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1 Noise induced and enhanced signal processing in nanoelectronics F. Hartmann 1, S. Höfling 1, A.Dari 2 A. Forchel 1, L. Gammaitoni 2 and L. Worschech 1 1 Technische Physik, Physikalisches Institut, Universität Würzburg and Wilhelm Conrad Röntgen Research Center for Complex Material Systems 2 NiPS Laboratory, Dipartimento di Fisica, Universita di Perugia
2 Motivation: From the macro-scale Stochastic resonance: Weak signals can be enhanced by fluctuations Ingredients: Noise Subthreshold signal Non-linear system, e.g. bistable systems SR as model was introduced to explain the periodic recurrences of ice ages: Benzi, Parisi, Sutera, Vulpiani
3 down to the micro and nano-scale Electron microscope images of a human hair and micro-pillar our department 1 µm 1 µm
4 Outline Technology & working principle Resonant tunneling diode Negative differential conductance & bistability Noise induced switching Stochastic Resonance Starting: From AC modulation To: Periodic light illumination Logic stochastic resonance (LSR) - NOR & NAND gates - Noise enhanced functioning
5 RTD: Fabrication RTDs AlGaAs/GaAs/AlGaAs DBS Dry chemical etching to define mesa from 1 µm down to 50 nm BCB (polymer) for mesa isolation Top Au/Ti/Ni contact Esaki, L. and Tsu, R.: Tunneling in a Finite Supperlattice, Appl. Phys. Lett. Vol (1973).
6 RTD: Working principle Increasing bias from a) to c) No current in a) Resonance condition in b) Out of resonance in c) 350 Simulations I (µa) Simulation: d = 750 nm 100Ω 200Ω 500Ω 1000Ω 100 Load induced bistability V(V)
7 SR in Resonant Tunneling diodes RTD is bistable with stable outputs I H = 800 µa and I L = 270 µa RT PVR ~ 3 Noise induced switches from one stable state appear Time scale is given by the inverse of the Kramer s rate
8 SR recording: Spectral amplitude For P noise < P SR no spectral component at f = 500 Hz is found. For P noise > P SR the spectral component at f = 500 Hz is still apparent. At the optimum noise level, the spectral amplitude reaches a maximum value and is decreasing apart P SR.
9 SR: Under ac drive For P noise < P SR the spectral component at f = 500 Hz is increasing. Maximum P SR => SR. For P noise > P SR the spectral component is decreasing again. Simulations (solid): - Ideal two state modell (Schmitt Trigger) with parameters from the experiment. - e.g. the barrier height was set to 16 mv as the hysteresis width of the device was 32 mv
10 SR: Under periodic light modulation Now: Change from ac modulation to a periodic light modulation Energy of the light E = 2.73 ev (448nm) above the GaAs bandgap Mechanically chopped at 500 Hz For P noise < P SR the spectral component at f = 500 Hz is increasing. Maximum P SR => SR. For P noise > P SR the spectral component is decreasing again.
11 SR: Comparsion ac versus light modulation At P noise = 32 nw the output follows almost perfectly the input signal!! SR for either peridoic ac modulation or periodic light modulation NIPS Summer School, Perugia August 2011
12 SR: Time traces P noise = 2 nw P noise = 32 nw P noise = 112 nw At P noise = 32 nw the output follows almost perfectly the input signal!!
13 Logic Stochastic Resonance (LSR) Noise induced signal trains Mean value is efficiently controlled by input signals Can be integrated to arrays No classical kt limit of transconductance
14 Logic Stochastic Resonance Parameters: - Logic inputs: V 1,2 = 0 (2) mv - I = I 1 + I 2 = = 0 - I = = = 1 - I = = 2 - Vac was set to 76.8 mv with a frequency of 1 khz. Two universal logic gates: - NOR/NAND - Noise induced logic gate switching - Simulations agree with experiment
15 Logic Stochastic Resonance It is useful to describe the probability to obtain for the logic gates by the differences NOR: < V>=<V(I=0)> <V(I=1)> NAND: < V>=<V(I=1)> <V(I=2)> Two maxima occur: For the NOR gate operation: P noise =0.9 nw And for the NAND gate operation: P noise =1.4 nw
16 Summary Stochastic resonance in RTDs RTDs are bistable devices RT SR for weak ac forcing with f = 500 Pnoise = 32 nw SR for weak periodic illumination with f = 500 Pnoise = 32 nw Logic stochastic resonance Logic NOR & NAND gate with switching voltages V 1,2 = 0(2)mV LSR for both noise powers ~nw
17 Acknowledgment Supported by: EU IST-SUBTLE, EU FP7 Nanopower, State of Bavaria Many thanks for your attention!
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