BAS16HT1G. Symbol Parameter Value Units V RRM Maximum Repetitive Reverse Voltage 85 V I F(AV) Average Rectified Forward Current 200 ma I FSM
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1 BAS6HTG BAS6HTG Connection Diagram A SOD-33 Small Signal Diode Absolute Maximum Ratings * T A = 5 C unless otherwise noted Symbol Parameter Value Units V RRM Maximum Repetitive Reverse Voltage 85 V I (AV) Average Rectified orward Current ma I SM Non-repetitive Peak orward Surge Current Pulse Width =. second 6 ma T STG Storage Temperature Range -65 to +5 C T J Operating Junction Temperature -55 to +5 C * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of 5 degrees C. ) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P D Power Dissipation mw R θja Thermal Resistance, Junction to Ambient 6 C/W Electrical Characteristics T A =5 C unless otherwise noted Symbol Parameter Test Conditions Min. Max. Units V R Breakdown Voltage I R = V V orward Voltage I =.ma I = ma I = 5mA I = 5mA I R Reverse Leakage V R = 75V V R = 5V, T A = 5 C V R = 75V, T A = 5 C C T Total Capacitance V R =, f =.MHz. p t rr Reverse Recovery Time I = I R = ma, I RR =.ma, 6. ns R L = Ω mv mv V V 4 airchild Semiconductor Corporation BAS6HTG, Rev. A
2 Typical Characteristics Reverse Voltage, V R [v] R Reverse Current, I R [ua] Reverse Current, I R [na] Reverse Voltage, V R [v] GENERAL RULE: The Reverse Current of a diode will approximately double for every ten () Degree C increase in Temperature BAS6HTG igure. Reverse Voltage vs Reverse Current BV -. to igure. Reverse Current vs Reverse Voltage IR - to V orward Voltage, V [mv] orward Current, I [ua] orward Voltage, V [mv] orward Current, I [ma] igure 3. orward Voltage vs orward Current V -. to igure 4. orward Voltage vs orward Current V -. to ma orward Voltage, V [V] orward Current, I [ma] Total Capacitance, C T [p] Reverse Voltage [V] igure 5. orward Voltage vs orward Current V - - 8mA igure 6. Total Capacitance 4 airchild Semiconductor Corporation BAS6HTG, Rev. A
3 Typical Characteristics (Continued) Reverse Recovery Time, t rr [ns] Reverse Current [ma] IRR (Reverse Recovery Current) =. ma - Rloop = Ohms Current [ma] D 5 I - ORWARD CURRENT STEADY STATE - ma R I(AV) - AVERAGE RECTIIED CURRENT - ma Io - AVERAGE RECTIIED CURRENT - ma 5 5 o o A Ambient Temperature, T A [ C] BAS6HTG igure 7. Reverse Recovery Time vs Reverse Current TRR - IR ma vs 6mA igure 8. Average Rectified Current (I (AV) ) vs Ambient Temperature (T A ) 5 Power Dissipation, P D [mw] SOT-3 Pkg SOD-33 Pkg DO-35 Pkg 5 5 Average Temperature, I o [ o C] igure 9. Power Derating Curve 4 airchild Semiconductor Corporation BAS6HTG, Rev. A
4 Package Dimension SOD-33 BAS6HTG Dimensions in Millimeters 4 airchild Semiconductor Corporation BAS6HTG, Rev. A
5 TRADEMARKS The following are registered and unregistered trademarks airchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolET CROSSVOLT DOME EcoSPARK E CMOS EnSigna ACT ACT Quiet Series DISCLAIMER AIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT URTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, UNCTION OR DESIGN. AIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT O THE APPLICATION OR USE O ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS O OTHERS. LIE SUPPORT POLICY AIRCHILD S PRODUCTS ARE NOT AUTHORIZED OR USE AS CRITICAL COMPONENTS IN LIE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL O AIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEINITIONS Definition of Terms AST ASTr PS RET GlobalOptoisolator GTO HiSeC I C i-lo ImpliedDisconnect Across the board. Around the world. The Power ranchise Programmable Active Droop ISOPLANAR LittleET MICROCOUPLER MicroET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR PACMAN POP Power47 PowerSaver PowerTrench QET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect µserdes SILENT SWITCHER SMART START SPM Stealth. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition SuperET SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncET TinyLogic TINYOPTO TruTranslation UHC UltraET VCX Advance Information ormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary irst Production This datasheet contains preliminary data, and supplementary data will be published at a later date. airchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed ull Production This datasheet contains final specifications. airchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by airchild semiconductor. The datasheet is printed for reference information only. 4 airchild Semiconductor Corporation Rev. I
Distributed by: www.jameco.com -8-8-4242 The content and copyrights of the attached material are the property of its owner. Connection Diagram 448 448SE SOT-2 2 5H MARKING MMBD448 5H MMBD448CA MMBD448CC
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G S D J J TO-92 MMBFJ MMBFJ G SOT-23 Mark: 6U / 6T D S NOTE: Source & Drain are interchangeable This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier,
More informationKSP42/43. Symbol Parameter Value Units V CBO V V V CEO
High oltage Transistor Collector-Emitter oltage: CEO =KSP42: KSP43: Collector Power Dissipation: P C (max)=625mw NPN Epitaxial Silicon Transistor TO-92. Emitter 2. Base 3. Collector Absolute Maximum Ratings
More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM741 Single Operational Amplifier Features Short Circuit Protection Excellent
More informationFeatures TO-264 E. Symbol Description SGL40N150D Units V CES Collector-Emitter Voltage 1500 V V GES Gate-Emitter Voltage ± 25 V Collector T
SGLN5D September 2 IGBT SGLN5D General Description Fairchild s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGLN5D is designed for the Induction Heating applications.
More informationFeatures. TA=25 o C unless otherwise noted. (Note 1b) 0.9. (Note 1c) 0.7
April V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage
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DESCRIPTION The 4N29, 4N30, 4N3, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. 4N29 4N30 4N3 4N32 4N33 FEATURES High sensitivity to low input
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More informationFeatures. Max r DS(on) = 50 V GS = -10 V, I D = -4A. Max r DS(on) = 75 V GS = -4.5 V, I D = -3.4A. RoHS Compliant
FC58AP Single P-Channel Logic Level PowerTrench MOSFET -3V, -A, 5mΩ General escription This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized
More informationQ1 D1 D2 Q P D (Note 1b) Power Dissipation for Single Operation (Note 1a)
FDG8850NZ Dual N-Channel PowerTrench MOSFET 30V,0.75A,0.4Ω Features Max r DS(on) = 0.4Ω at V GS = 4.5V, I D = 0.75A Max r DS(on) = 0.5Ω at V GS = 2.7V, I D = 7A Very low level gate drive requirements allowing
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More informationFJA4310. Symbol Parameter Value Units
FJA43 FJA43 Audio Power Amplifier High Current Capability : =A High Power Dissipation Wide S.O.A Complement to FJA42 TO-3P.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
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More informationApplication TOP. Symbol Parameter Ratings Units V DS Drain to Source Voltage 20 V V GS Gate to Source Voltage ±12 V Drain Current -Continuous T
FDZ93P P-Channel.5V Specified PowerTrench BGA MOSFET V,.6A, 6mΩ Features Max r DS(on) = 6mΩ at V GS =.5V, I D =.6A Max r DS(on) = 7mΩ at V GS =.5V, I D = 3.6A Occupies only.5 mm of PCB area. Less than
More informationFeatures. Symbol Description SGH15N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
SGH5N6RUFD Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.
More informationFeatures. TA=25 o C unless otherwise noted
3V P-Channel PowerTrench MOSFET October 2 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
G S D PN PN PN TO-92 This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance
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RHRP4, RHRP6 Data Sheet January 22 A, 4V - 6V Hyperfast Diodes The RHRP4 and RHRP6 are hyperfast diodes with soft recovery characteristics ( < 3ns). They have half the recovery time of ultrafast diodes
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