SOLID STATE DIVISION. Selection Guide Aug Si PHOTODIODES. Lineup of Si photodiodes for UV to near IR, radiation

Transcription

1 SOLID STATE DIVISION Selection Guide Aug. 211 Si PHOTODIODES Lineup of Si photodiodes for UV to near IR, radiation

2 Contents 1. Si photodiode for precision photometry For UV to near IR For UV to near IR (IR sensitivity suppressed type) Visible to near IR 2. Si photodiode for general photometry/visible range For visible range For visible range to near IR 3. High-speed response Si PIN photodiode Cut-off frequency: 1 GHz or more Cut-off frequency: 5 MHz to less than 1 GHz Cut-off frequency: 1 MHz to less than 5 MHz Cut-off frequency: 1 MHz to less than 1 MHz 4. Multi-element type Si photodiode Segmented type photodiode One-dimensional photodiode array (UV to near IR: UV sensitivity enhanced type) 5. Surface mount type Si photodiode High-speed response Si PIN photodiode Segmented type photodiode 6. Si photodiode with preamp, TE-cooled type Si photodiode Si photodiode with preamp for measurement TE-cooled type Si photodiode 7. Si photodiode for X-ray detection Si photodiode with scintillator Large active area Si PIN photodiode 8. Special application Si photodiode RGB color sensor Violet and blue sensitivity enhanced type For VUV (vacuum ultraviolet) detection For monochromatic light detection For YAG laser detection Infrared-enhanced type For electron beam detector CSP (Chip Size Package) type 9. Related product of Si photodiode RGB color sensor module for TFT-LCD monitor Color sensor evaluation circuit Driver circuit for Si photodiode array diode modules Signal processing unit for photodiode module sensor amplifier Charge amplifier 1. Description of terms 11. Principle of operation, equivalent circuit 12. Application circuit examples 13. Packaging technology For detailed data on the products listed in this catalogue, see their datasheets that are available from our website

3 Si photodiode Si PHOTODIODE diodes are semiconductor light sensors that generate a current or voltage when the P-N junction in the semiconductor is illuminated by light. The term photodiode can be broadly defined to include even solar batteries, but it usually refers to sensors used to detect the intensity of light. diodes can be classified by function and construction as follows: Si photodiode Si PIN photodiode Si APD (Avalanche photodiode) All of these types provide the following features and are widely used for the detection of the presence, intensity and color of light. Excellent linearity with respect to incident light Low noise Wide spectral response range Mechanically rugged Compact and lightweight Long life Si photodiodes manufactured utilizing our unique semiconductor process technologies cover a broad spectral range from the near infrared to ultraviolet and even to high-energy regions. They also feature high-speed response, high sensitivity and low noise. Si photodiodes are used in a wide range of applications including medical and analytical fields, scientific measurements, optical communications and general electronic products. Si photodiodes are available in various packages such as metal, ceramic and plastic packages as well as in surface mount types. We also offer custom-designed devices to meet special needs. Si photodiode of HAMAMATSU Si photodiode Si PIN photodiode Type Feature Product example Multi-element type Si photodiode Si photodiode with preamp, TE-cooled type Si photodiode Si photodiode for X-ray detection Si APD * Related product of Si photodiode Featuring high sensitivity and low dark current, these Si photodiodes are specifically designed for precision photometry and general photometry/visible range. Si PIN photodiodes delivering high-speed response when operated with a reverse bias are widely used for optical communications and optical disk pickup, etc. Si photodiode arrays consist of multiple elements of the same size, formed in a linear arrangement at an equal spacing in one package. These Si photodiode arrays are used in a wide range of applications such as laser beam position detection and spectrophotometry. Si photodiodes with preamp incorporate a photodiode and a preamplifier chip into the same package. TE-cooled type Si photodiodes are suitable for low-light-level detection where a high S/N is re- These detectors are comprised of a Si photodiode coupled to a scintillator. These detectors are used for X- ray baggage inspection and non-destructive inspec- Si APDs are high-speed, high sensitivity photodiodes having an internal gain mechanism. HAMAMATSU provides various types of Si photodiode modules. For UV to near IR For visible range to near IR For visible range RGB color sensor For VUV (vacuum ultraviolet) detection For monochromatic light detection For electron beam detector Cut-off frequency: 1 GHz or more Cut-off frequency: 5 MHz to less than 1 GHz Cut-off frequency: 1 MHz to less than 5 MHz Cut-off frequency: 1 MHz to less than 1 MHz For YAG laser detection Segment type photodiode One-dimensional photodiode array For analytical and measurement With scintillator Large active area type Near IR type Short wavelength type Multi-element type RGB color sensor module Color sensor evaluation circuit Driver circuit for Si photodiode array diode module Signal processing unit for photodiode module sensor amplifier Charge amplifier * Si APD is not listed in this catalogue. Note: HAMAMATSU also provides PSD (Position Sensitive Detector) used to detect the position of incident light spot. PSD is a nondiscrete photosensor utilizing the surface resistance of photodiodes.

4 1. Si photodiode for precision photometry For UV to near IR These Si photodiodes have sensitivity in the UV to near IR range. range sensitivity λ=2 nm λ=96 nm Dark current VR=1 mv Max. (pa) Terminal capacitance VR= V f=1 khz (pf) Active area size Package S BU S BQ 19 to TO-18 S BK 32 to 11 S1336-5BQ S1336-5BK S BQ S BK 19 to to to to TO-5 S1336-8BQ 19 to TO-8 S1336-8BK 32 to 11 S BQ 19 to S BR 34 to S BQ 19 to S BR 34 to Ceramic S BQ 19 to S BR 34 to S BQ 19 to S BR 34 to S1336/S1337 series Dark current vs. reverse voltage S1336 series S1337 series.7 1 na 1 na S1336-BK QE=1 % S1336-BQ S1337-BQ S1337-BR S BU S1336-BQ/BK/BU S1337-BQ DARK CURRENT 1 na 1 pa 1 pa 1 pa 1 fa.1 S1336-8BQ/BK S BQ/BK/BU S BQ/BK S1336-5BQ/BK DARK CURRENT 1 na 1 pa 1 pa 1 pa 1 fa.1 S BQ/BR S BQ/BR S BQ/BR S BQ/BR REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) KSPDB262ED KSPDB1EA KSPDB14EB 1

5 range sensitivity λ=2 nm λ=96 nm Dark current VR=1 mv Max. (pa) Terminal capacitance VR= V f=1 khz (pf) Active area size Package S to Ceramic (unsealed) S to Ceramic S2281 * to With BNC connector S * 7.98 * The S2281 series photodiodes connect to the C9329 photosensor amplifier (using a BNC-BNC cable E2573). Weak photocurrent from these photodiodes can be amplified with low noise. S S2551 S2281, S QE=1% QE=1% QE=1% KSPDB34EA KSPDB173EB KSPDB27EA Dark current vs. reverse voltage S S2551 S2281, S na 1 na 1 na 1 na 1 na 1 na DARK CURRENT 1 na 1 pa 1 pa DARK CURRENT 1 na 1 pa DARK CURRENT 1 pa 1 pa 1 pa 1 pa 1 pa 1 fa pa fa REVERSE VOLTAGE (V) KSPDB35EA REVERSE VOLTAGE (V) KSPDB175EB REVERSE VOLTAGE (V) KSPDB271EA 2

6 For UV to near IR (IR sensitivity suppressed type) These Si photodiodes have suppressed IR sensitivity range sensitivity λ=2 nm λ=72 nm Dark current VR=1 mv Max. (pa) Terminal capacitance VR= V f=1 khz (pf) Active area size Package S BU S BQ 19 to TO-18 S BK 32 to 1 S1226-5BQ S1226-5BK S BQ S BK 19 to 1 32 to 1 19 to 1 32 to TO-5 S1226-8BQ 19 to TO-8 S1226-8BK 32 to 1 S BQ 19 to S BR 34 to S BQ 19 to S BR 34 to 1.43 Ceramic S BQ 19 to S BR 34 to 1.43 S BQ 19 to S BR 34 to 1.43 S to φ11.3 With BNC connector S1226/S1227 series, S Dark current vs. reverse voltage S1226 series S1227 series, S na 1 na.6 QE=1% S S1226-BQ S1227-BQ S S1226-BQ/BK/BU S1227-BQ S S1227-BR S1226-BU.1 S1226-BK DARK CURRENT 1 pa 1 pa 1 pa 1 fa.1 S BQ/BK S1226-8BQ/BK S1226-5BQ/BK S BQ/BK/BU DARK CURRENT 1 pa 1 pa 1 pa 1 fa.1 S BQ/BR S BQ/BR S BQ/BR S BQ/BR REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) KSPDB263ED KSPDB275EA KSPDB276EA 3

7 1. Si photodiode for precision photometry Visible range to near IR These Si photodiodes offer enhanced sensitivity especially in the near IR range. range sensitivity λ=96 nm Dark current VR=1 mv Max. (pa) Terminal capacitance VR= V f=1 khz (pf) Active area size Package S K TO-18 S L S2386-5K 32 to S K TO-5 S K S2386-8K TO-8 S R S R S R 34 to Ceramic S R S R Dark current vs. reverse voltage S2386/S2387 series S2386 series S2387 series.7 1 na 1 na S2386 series QE=1% S2387 series DARK CURRENT 1 pa 1 pa 1 pa 1 fa S2386-8K S K/18L/5K/44K/45K DARK CURRENT 1 pa 1 pa 1 pa 1 fa S R S R S R/33R S R KSPDB272ED 1 fa REVERSE VOLTAGE (V) KSPDB113EB 1 fa REVERSE VOLTAGE (V) KSPDB117EB 4

8 2. Si photodiode for general photometry/visible range For visible range These Si photodiodes have sensitivity in the visible range. Dark current Peak sensitivity sensitivity VR=1 V Active area size range wavelength λ=λp Max. Package (pa) Filter type (general use) These are Si photodiodes with visible-compensated filters. S8265 is a high humidity resistance type. S to Ceramic S S to Ceramic S to Plastic Filter type (CIE standard luminous spectral efficiency approximation) S (VR=1 mv) φ11.3 With BNC connector 38 to 78 S (VR=1 mv) TO-5 S to Ceramic S187, S1133, S1787-4, S8265 S9219 series, S QE=1% S8265 S187 S1133 S RELATIVE SENSITIVITY (%) CIE STANDARD LUMINOUS SPECTRAL EFFICIENCY S9219 series (VERTICAL INCIDENCE) S7686 (VERTICAL INCIDENCE) KSPDB277EB KSPDB285ED 5

9 For visible range to near IR These Si photodiodes have sensitivity in the visible range to near IR. Dark current Peak sensitivity sensitivity Active area range VR=1 V wavelength λ=λp size Max. Package (pa) S Plastic S to S Ceramic S411-6DS S Plastic S to S Ceramic S S , S4797-1, S S411-6DS, S1787-8, S2833-1, S187-1, S QE=1 % S S S QE=1 % KSPDB279EE KSPDB286EC 6

10 3. High-speed response Si PIN photodiode Cut-off frequency: 1 GHz or more These Si PIN photodiodes deliver a wide bandwidth even with a low bias, making them ideal for high-speed photometry as well as optical communications. Cut-off frequency (MHz) Active area size sensitivity λ=78 nm λ=83 nm Terminal capacitance f=1 MHz (pf) Package S GHz (VR=3.3 V) φ (VR=3.3 V) S TO-18 S GHz (VR=2 V) φ.2.8 (VR=2 V) S GHz (VR=2 V) φ.1.5 (VR=2 V).6 QE=1 % Terminal capacitance vs. reverse voltage 1 pf S5973/-1 TERMINAL CAPACITANCE 1 pf S955-1 S5973/-1 S955 S955 series ff KPINB326EB REVERSE VOLTAGE (V) KPINB332EA Frequency response 5 S5973, S S955 series λ=41 nm λ=83 nm (Typ. Ta=25 C, λ=83 nm, VR=3.3 V, RL=5 Ω) (Typ. Ta=25 C, VR=2 V, RL=25 Ω) (Typ. Ta=25 C, VR=2 V, RL=25 Ω) 5 5 S955-1 S955-1 RELATIVE OUTPUT (db) RELATIVE OUTPUT (db) S955 RELATIVE OUTPUT (db) S MHz 1 MHz 1 MHz 1 GHz 1 GHz khz 1 MHz 1 MHz 1 MHz 1 GHz 1 GHz khz 1 MHz 1 MHz 1 MHz 1 GHz 1 GHz FREQUENCY FREQUENCY FREQUENCY KPINB298EA KPINB277EB KPINB278EB 7

11 Cut-off frequency: 5 MHz to less than 1 GHz S5972 delivers a wide bandwidth even with a low bias Cut-off frequency VR=1 V (MHz) Active area size sensitivity λ=66 nm λ=78 nm Terminal capacitance VR=1 V f=1 MHz (pf) Package S φ TO-18 Cut-off frequency: 1 MHz to less than 5 MHz These Si PIN photodiodes have a large active area (φ1.2 to φ3. mm) yet deliver excellent frequency response characteristics (1 MHz to 3 MHz). Cut-off frequency (MHz) Active area size sensitivity λ=66 nm λ=78 nm Terminal capacitance f=1 MHz (pf) Package S5971 S (VR=1 V) φ1.2 φ (VR=1 V) 2 (VR=1 V) TO TO-5 S (VR=2 V) φ1.5 6 (VR=2 V) S1783 φ Plastic 3 (VR=2.5 V) 4.5 (VR=2.5 V) S1784 φ Plastic with lens S5972 S5971, S3399, S3883 S1783, S QE=1 %.6 S QE=1 % S5971 S3399, S S KPINB315ED KPINB316EC KPINB355EB Terminal capacitance vs. reverse voltage S5972 S5971, S3399, S3883 S1783, S pf (Typ. Ta=25 C, f=1 MHz) 1 pf (Typ. Ta=25 C, f=1 MHz) 1 pf (Typ. Ta=25 C, f=1 MHz) S3399 TERMINAL CAPACITANCE 1 pf TERMINAL CAPACITANCE 1 pf S3883 S5971 TERMINAL CAPACITANCE 1 pf 1 pf pf pf REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) KPINB338EA KPINB341EC KPINB358EB 8

12 Cut-off frequency: 1 MHz to less than 1 MHz A wide variety of types are provided including a low-cost plastic package type and visible-cut type. Cut-off frequency (MHz) Active area size sensitivity λ=66 nm λ=78 nm Terminal capacitance f=1 MHz (pf) Package S6775 S (VR=1 V) 5 (VR=1 V) (VR=1 V) 5 (VR=1 V) S (VR=1 V).54 (λ=83 nm).68 (λ=λp) 4 (VR=1 V) S S (λ=83 nm).56 (λ=λp) 12 (VR=5 V) S (VR=5 V) Plastic S (λ=83 nm).68 (λ=λp) 16 (VR=5 V) S S S (VR=12 V) (λ=83 nm).56 (λ=λp) 15 (VR=12 V) 2 S (VR=1 V) (VR=1 V) S (VR=1 V) φ14 (lens diameter).52 (λ=83 nm).65 (λ=λp) 4 (VR=1 V) Plastic with φ14 mm lens S8385/S8729 series S6775/S6967/S256 series S477-1, S S8729 S QE=1 % S8385 S S S256-2 S6967 QE=1 % S6775 S S QE=1 % S477-1 S KPINB324EE KPINB167EF KPINB354EB 9

13 3. High-speed response Si PIN photodiode Cut-off frequency (MHz) Active area size sensitivity λ=66 nm λ=78 nm Terminal capacitance f=1 MHz (pf) Package S5821 φ1.2 S (VR=1 V) (VR=1 V) TO-18 S φ4.65 (lens diameter) S S1223 S (VR=2 V) 2 (VR=2 V) (VR=2 V) 2 (VR=2 V) TO-5 S (VR=24 V) φ (VR=24 V) S371 4 (VR=24 V) φ (VR=24 V) TO-8 S (VR=1 V) φ4.1.5 (λ=96 nm) 1 (VR=1 V) S5821 series, S371, S372 S1223 series S QE=1 % S5821 series S371, S QE=1 % QE=1 % KPINB335EB Terminal capacitance vs. reverse voltage KPINB143EB KPINB181EB S5821 series, S371, S372 S1223 series S nf (Typ. Ta=25 C, f=1 MHz) 1 nf (Typ. Ta=25 C, f=1 MHz) 1 nf (Typ. Ta=25 C, f=1 MHz) TERMINAL CAPACITANCE 1 pf 1 pf S5821 series S371 S372 TERMINAL CAPACITANCE 1 pf 1 pf S1223 S TERMINAL CAPACITANCE 1 nf 1 pf 1 pf 1 pf pf pf REVERSE VOLTAGE (V) KPINB344EA REVERSE VOLTAGE (V) KPINB146EA REVERSE VOLTAGE (V) KPINB184EB 1

14 4. Multi-element type Si photodiode Segmented type photodiode These Si PIN photodiode arrays consist of 2 or 4 elements having sensitivity in the UV to near IR range. Number of elements Active area size sensitivity Cut-off frequency VR=1 V, RL=5 Ω (MHz) Terminal capacitance VR=1 V, f=1 MHz (pf) Package S /2-segment (λ=65 nm) S /2-segment (λ=65 nm) 3 3 Plastic 1. S a b (λ=65 nm) 15 4 diode a 1 diode b S /4-segment (λ=72 nm) 2 (VR=5 V) 25 (VR=5 V) TO-5 S396-2, S424 S QE=1 % S424 S QE=1 % KMPDB134EE KPINB336ED S QE=1 % KMPDB126EB

15 One-dimensional photodiode array (UV to near IR: UV sensitivity enhanced type) These are Si photodiode linear arrays having rectangular elements equally spaced at a pitch of about 1 mm. Number of elements Active area size /element Element pitch Spectral response range sensitivity λ=λp Dark current VR=1 mv Max. (pa) Terminal capacitance VR= V, f=1 khz (pf) Package S Q S R to to S Q Ceramic to S Q 46 NEW S NEW S to 11.61* 3 4 Glass epoxy (unsealed) * λ=92 nm S4111 series S11212/S QE=1 % S Q/35Q/46Q S R QE=1 % Structure of active area (unit: mm) S4111 series KMPDB112ED S11212/S KMPDB357EA CH1 CH n a b n a S R/-16Q b S Q S Q Details of elements (S4111 series) KMPDA227EB.4 KMPDA228EC a a c d S Q/16R S Q/46Q d c d KMPDA112EB 12

16 5. Surface mount type Si photodiode High-speed response Si PIN photodiode These are photodiodes sealed in a chip carrier package suitable for surface mounting and allowed solder reflow mounting on PC boards for automated processes. Cut-off frequency VR=1 V (MHz) Active area size Spectral response range sensitivity λ=96 nm Terminal capacitance VR=1 V f=1 MHz (pf) Package S S to Ceramic S S Segmented type photodiode These Si photodiodes consist of 2 or 4 elements and are integrated into a chip carrier package. Number of elements Active area size Spectral response range sensitivity λ=96 nm Cut-off frequency VR=1 V, RL=5 Ω (MHz) Terminal capacitance VR=1 V, f=1 MHz (pf) Package.3 S /4-segment S /4-segment to Ceramic 1. S /2-segment Terminal capacitance vs. reverse voltage S516, S517, S759, S751, S598, S5981 S587 S516, S517, S759, S nf (Typ. Ta=25 C, f=1 MHz) QE=1 % QE=1 % TERMINAL CAPACITANCE 1 nf 1 pf S516 S517 S S pf REVERSE VOLTAGE (V) KPINB165EA KMPDB122EB KPINB128EA

17 6. Si photodiode with preamp, TE-cooled type Si photodiode Si photodiode with preamp for measurement These are low noise photosensors incorporating a large area Si photodiode, op amp and feedback capacitance. Cooling temperature T ( C) Active area size Spectral response range sensitivity (V/nW) λ=2 nm λ=96 nm NEP λ=λp, f=1 Hz (fw/hz 1/2 ) Built-in feedback resistance (GΩ) Package S Non-cooled S to 11 Metal S S S Non-cooled 34 to Ceramic S NEP (Noise Equivalent Power) vs. frequency S S [Typ. Ta=25 C, Vcc=±15 V, Cf=5 pf (built-in), RL=1 MΩ, dark state, λ=λp] 1 6 [Typ. Ta=25 C, Vcc=±15 V, Cf=5 pf (built-in), RL=1 MΩ, dark state, λ=λp] 1 6 NEP (fw/hz 1/2 ) MΩ (EXTERNAL CONNECTED) +11 MΩ (EXTERNAL CONNECTED) +111 MΩ (EXTERNAL CONNECTED) NEP (fw/hz 1/2 ) MΩ (EXTERNAL CONNECTED) +11 MΩ (EXTERNAL CONNECTED) +111 MΩ (EXTERNAL CONNECTED) S S FREQUENCY (khz) KSPDB237EA FREQUENCY (khz) KSPDB238EA S9295 series S9269, S (Typ. Vcc=±15 V) 1 5 (Typ. Ta=25 C, Vcc=±15 V) S (T= -5 C) 1 4 NEP (fw/hz 1/2 ) S9295 (T= -25 C) NEP (fw/hz 1/2 ) S927 S FREQUENCY (Hz) KSPDB23EB FREQUENCY (khz) KSPDB241EA 14

18 6. Si photodiode with preamp, TE-cooled type Si photodiode TE-cooled type Si photodiode These photosensors combine a UV to near infrared Si photodiode with a thermoelectric cooler and deliver low dark current. Cooling Noise temperature Active area Spectral Peak sensitivity Dark current equivalent T size response range wavelength VR=1 mv power Package ( C) (pa) (W/Hz 1/2 ) S S S S to TO-8 TO-66.7 Thermistor temperature characteristic 1 6 (Typ.).6 QE=1 % RESISTANCE (Ω) KSPDB182EA ELEMENT TEMPERATURE ( C) KIRDB116EA 15

19 7. Si photodiode for X-ray detection Si photodiode with scintillator These detectors are comprised of a Si photodiode coupled to a scintillator (ceramic or CsI). Ceramic scintillators have sensitivity to X-rays about 1.2 times higher than CWO and offer high reliability. CsI scintillators also have high sensitivity and are less expensive. The S11212 and S11299 series photodiode arrays have a back-illuminated type structure. They realize superb spectral response range and uniformity compared to our previous products. Scintillator Active area size /element Number of elements Dark current Max. (pa) X-ray sensitivity * (na) Package S8559 CsI(TI) Ceramic S8193 GOS ceramic 3 NEW S CsI(TI) 6. NEW S GOS ceramic 3.5 NEW S Fluorescent paper Glass epoxy NEW S CsI(TI) 6. NEW S GOS ceramic 3.5 NEW S Fluorescent paper 3. * These are for reference (X-ray tube voltage 12 kv, tube current 1. ma, aluminum filter t=6 mm, distance 83 mm), X-ray sensitivity depends on the X-ray equipment operating and setup conditions. (without scintillator) sensitivity QE=1 % Previous product S11212/S11299 series Uniformity Relative sensitivity (%) S11212/S11299 series 1 95 Previous product Element no. KIRDB361EA Wavelength * characteristics include the transmittance and reflectance of the adhesive resin used to bond a scintillator. KSPDB36EA 16

20 Emission spectrum of scintillator and spectral response S11212/S S11212/S RELATIVE EMISSION INTENSITY (%) SPECTRAL RESPONSE EMISSION SPECTRUM OF CsI (TI) QUANTUM EFFICIENCY (%) RELATIVE EMISSION INTENSITY (%) EMISSION SPECTRUM OF CERAMIC SCINTILLATOR 1 SPECTRAL RESPONSE QUANTUM EFFICIENCY (%) KSPDB282EC KSPDB281EC Typical scintillator characteristics Parameter Condition CsI (TI) GOS ceramic Unit Peak emission wavelength X-ray absorption coefficient 1 kev 1 7 Refractive index at peak emission wavelength Decay constant 1 3 Afterglow 1 ms after X-ray turn off.3.1 Density Color Transparent Light yellow-green Sensitivity non-uniformity ±1 ±5 nm cm -1 s % g/cm 3 % 17

21 7. Si photodiode for X-ray detection Large active area Si PIN photodiode These Si PIN photodiodes, mounted on a white ceramic base, are specifically developed for applications in high energy physics and are mainly used being coupled to a scintillator. Because of high resistance to breakdown voltages, these Si PIN photodiodes operate at high reverse voltages allowing a high-speed response despite the large active areas. The S359-18/19 are violet sensitivity enhanced type and the S is an unsealed type. To improve photodiode-to-scintillator coupling efficiency, we also offer the S865 with epoxy coating windows processed to have a flat surface (flatness: ±5 m) Depletion layer Spectral Dark current Terminal Active area capacitance Window thickness response sensitivity Max. size VR=7 V Package VR=7 V range λ=96 nm VR=7 V f=1 MHz (na) (pf) S359-8 S359-9 Epoxy resin Unsealed.66 6 S S Epoxy resin Unsealed to Ceramic S865 Epoxy resin.66 6 S359-8, S865 S359-9 S359-18/ QE=1 % QE=1 % QE=1 % S S KPINB347EC KPINB263EC KPINB322EC Terminal capacitance vs. reverse voltage S359 series, S865 Emission spectrum of scintillators and spectral response (S359-8) 1 nf (Typ. Ta=25 C, f=1 MHz) 1 1 TERMINAL CAPACITANCE 1 nf 1 pf S359-18/19 S359-8/9 S865 RELATIVE EMISSION INTENSITY (%) Nal (T Csl l) (T l) BGO SPECTRAL RESPONSE QUANTUM EFFICIENCY (%) 1 pf REVERSE VOLTAGE (V) KPINB331EC KPINB17EF 18

22 7. Si photodiode for X-ray detection Depletion layer Spectral Dark current Terminal Active area capacitance Window thickness response sensitivity Max. size VR=7 V Package VR=7 V range λ=96 nm VR=7 V f=1 MHz (na) (pf) S S Epoxy resin Unsealed S324-8 S324-9 S S Epoxy resin Unsealed Epoxy resin Unsealed to Ceramic S S Epoxy resin Unsealed S2744/S3588 series S324/S3584 series.7.6 S2744-9/S S324/S QE=1 % S2744-8/S QE=1 % S324/S KPINB265EC KPINB263EC Terminal capacitance vs. reverse voltage S2744/S3588 series S324/S3584 series 1 nf (Typ. Ta=25 C, f=1 MHz) 1 nf (Typ. Ta=25 C, f=1 MHz) S3584-8/9 TERMINAL CAPACITANCE 1 nf 1 pf S2744-8/9 TERMINAL CAPACITANCE 1 nf 1 pf S324-8/9 S3588-8/9 1 pf REVERSE VOLTAGE (V) KPINB222EB 1 pf REVERSE VOLTAGE (V) KPINB23ED 19

23 8. Special application Si photodiode RGB color sensor These photosensors are color sensors using a 3-element photodiode with color sensitivity, assembled in one package. S755-1 S932-2 * 1 S972 * 1 range Blue 4 to Green 48 to 6 54 Red 59 to 72 Peak sensitivity wavelength 62 Blue 4 to Green 48 to 6 54 Red 59 to Blue 4 to Green 48 to 6 54 Red 59 to sensitivity λ=λp Blue Green Red Blue Green Red Blue Green Red Dark current VR=1 V All elements total Max. (pa) Active area size Blue Green Red ( 2) φ2/3-segment 1 1/3-segment Package Surface mount type plastic Surface mount type plastic Surface mount type, small plastic S1942-1CT See the spectral response Blue Green Red.21 * 2.25 * 2.45 * /3-segment Surface mount type, small and thin plastic *1: If excessive vibration is continuously applied to the glass filter, there is a risk that the filter may come off, so secure the glass filter with a holder. *2: Blue: λ=46 nm, Green: λ=54 nm, Red: λ=64 nm S6428-1, S and S643-1 are monochromatic color sensors sensitive to blue, green and red light, respectively. range Peak sensitivity wavelength sensitivity λ=λp Dark current VR=1 V Max. (pa) Active area size Package S to S to Plastic S to S755-1, S932-2, S972 S1942-1CT S6428-1, S6429-1, S QE=1 % Blue Green Red Blue Green Red QE=1 % S643-1 S S KMPDB217EB KSPDB287EA KSPDB28EB This sensor also has sensitivity in the infrared region, so cut off infrared light as needed. 2

24 Violet and blue sensitivity enhanced type These are photodiodes for blue laser diode detection. Terminal Peak sensitivity Cut-off frequency Active area size sensitivity capacitance wavelength f=1 MHz Package (MHz) (pf) S GHz (VR=3.3 V) φ (λ=41 nm) 1.6 (VR=3.3 V) TO-18 5 S (VR=1 V) (λ=45 nm) 6 (VR=1 V) TO-8 2 S (VR=3 V) (λ=41 nm) 4 (VR=3 V) Ceramic S S QE=1 % QE=1 % KPINB337EB KPINB289EB S QE=1 % KPINB198EB 21

25 8. Special application Si photodiode For VUV (vacuum ultraviolet) detection These Si photodiodes are specially optimized for excimer laser detection (ArF: 193 nm, KrF: 248 nm): sensitive in the vacuum UV (VUV) range. sensitivity Dark current VR=1 mv Active area size λ=193 nm Max. Package (na) S TO-8 (unsealed) S Ceramic (unsealed) S S TO-8 S inch metal High reliability type The S143 is greatly improved in sensitivity stability even after exposure to ArF (λ=193 nm) excimer laser. sensitivity Dark current VR=1 mv Active area size λ=193 nm Max. Package (na) S Ceramic (unsealed) Variation in sensitivity due to UV exposure RELATIVE SENSITIVITY (%) [Typ. Ta=25 C, ArF excimer laser,.1 mj/cm 2 /pulse, f=1 Hz, λ=193 nm, pulse width 15 ns (FWHM)] S143 (NO DEGRADATION) S8551, S8552, S8553 S9682, S9683 S1227/S1337 series.6 S8551, S8552, S S9682, S S KSPDB283EA NUMBER OF SHOTS KSPDB264EC S9682, S9683 S8551, S8552, S8553 S KSPDB284EA 22

26 For monochromatic light detection This photosensor uses an interference filter and has high sensitivity only to monochromatic light. Spectral Dark current Peak sensitivity response VR=1 mv Active area size wavelength sensitivity half-width Max. Package (pa).18 S TO-5 (λ=254 nm).2 S S (λp=56 nm) (λp=65 nm) S (λp=7 nm) S (λp=45 nm) S (λp=34 nm) S (λp=254 nm) S (λp=52 nm) S (λp=5 nm) Note) Made to order other than S For YAG laser detection KSPDB135EB This is a Si PIN photodiodes developed to measure infrared energy emitted from YAG lasers (1.6 m). Active area size Spectral response range Peak sensitivity wavelength sensitivity λ=1.6 m Dark current Max. (na) Rise time λ=1.6 m VR=1 V, RL=5 Ω (ns) Package S3759 φ5 36 to (VR=1 V) 12.5 TO-8 Response waveform.8 1 % [Typ. Ta=25 C, λ=16 nm (YAG laser), VR=1 V, RL=5 Ω] QE=1 % 5 % ns KPINB279EB KPINB28EB 23

27 8. Special application Si photodiode Infrared-enhanced type These are Si PIN photodiodes that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. Active area Spectral Dark current Terminal capacitance Cut-off sensitivity VR=2 V size response range VR=2 V frequency Package λ=16 nm Max. f=1 MHz VR=2 V (na) (pf) (MHz) S11499 φ TO-5 36 to 114 S φ TO QE=1 % Conventional type S11499 series For electron beam detector KPINB368EB These photodiodes directly detect low energy (1 kev or less) electron beams with high sensitivity. The structure with an extremely thin dead layer (insensitive layer) makes these photodiodes ideal for backscattered electron detector for Scanning Electron Microscope (SEM). Incident electron energy range (kev) Output current ( A) Dark current Max. VR=5 V (na) Terminal capacitance VR=5 V (pf) Cut-off frequency VR=5 V (MHz) Electron multiplying gain Package S to Electron energy: 5 kev Ip *=1 na 11 Electron energy: 5 kev Thin ceramic package (unsealed) S * Probe current Gain vs. electron energy (Typ. Ta=25 C, Ip=1 na) 1 Electron multiplication principle OUTPUT CURRENT Si PHOTODIODE SILICON VACUUM GAIN 1 ELECTRON DEAD LAYER ELECTRON ENERGY (kev) KSPDB299EA DETAIL GENERATION OF ELECTRON-HOLE PAIRS (ELECTRON MULTIPLICATION) Electrons generate ions as they pass through silicon. This ionization process generates a large number of electron-hole pairs that then multiply the number of electrons. The electron multiplication can boost the output current by approximately 1 times at an input electron energy of 5 kev (Refer to "Gain vs. electron energy"). KSPDC64EB 24

28 8. Special application Si photodiode CSP (Chip Size Package) type The S1356-1, S and S are back-illuminated type photodiodes designed to minimize the dead areas at the device edges by using a CSP structure. The CSP also allows using multiple devices in a tiled format. Package size Spectral response range Peak sensitivity wavelength sensitivity λ=96 nm Shout circuit current 1 lx, 2856 K ( A) Terminal capacitance VR= V, f=1 khz (nf) Package S to PWB (unsealed) S KSPDB288EC 25

29 9. Related product of Si photodiode RGB color sensor module for TFT-LCD monitor RGB-LED backlight monitor for TFT-LCD (Liquid Crystal Display) Features Applications Built-in RGB color sensor (S932-2) RGB-LED backlight monitor for TFT-LCD Sensitivity matches wavelengths of RGB-LED backlight for TFT-LCD. 3 ch current-to-voltage amplifiers Simultaneous output of 3 ch RGB photocurrent Configuration and size suitable for side mounting to TFT-LCD Suitable for lead-free solder Low current consumption:.4 ma Typ. (1/3 than the conventional type) High gain type (C933-4) λp=62 nm C sensitivity (V/mW) λp=54 nm -2 λp=46 nm Cut-off frequency (khz) C Color sensor evaluation circuit Color sensor evaluation circuit board Features 3 ch current-to-voltage conversion amplifier for color sensor evaluation Color sensors that mount on C9331: S755-1, S932-2 (sold separately) Applications Evaluation of Hamamatsu color sensor Parameter Symbol Condition Min. Typ. Max. Unit Output offset voltage Vos Zt= V/A Without photodiode - ±4 ±5 mv C9331 Trans-impedance adjustment range Zt to V/A Amplifier bandwidth B Without photodiode - DC to 14 - khz (Ta=25 C, Vcc=9. V, common to each RGB channel) Driver circuit for Si photodiode array Driver circuit for 16-element photodiode array Features High precision and high-speed measurement by simultaneous 16-channel readout Assembled with pulse generator (8-step adjustable oscillatory frequency) CLK, START, A/D conversion Trig and EOS pulse output Choice of gain (conversion impedance): or (V/A) Single power supply operation: +12 V C94 Suitable sensor HAMAMATSU S series, S5668 series photodiode arrays are directly mountable on board. 26

30 diode modules Integrates a Si photodiode for precision photometry with low-noise amp. C1439 series is a high-precision photodetector that combines a Si diode and current-to-voltage conversion amp. Three different active areas are available. Features Easy handling Two switchable photo-sensitivity ranges Compact size Active area size Peak sensitivity wavelength sensitivity λ=λp High range (mv/nw) Low range (mv/nw) Output amplitude voltage lo=1 ma (V) Cut-off frequency -3 db High range (Hz) Low range (Hz) Supply voltage (V) (Ta=25 C) Dimension C C to +Vcc -.2 C DC to 1 DC to 1 ±5 to ±12 19 (W) 52 (H) 46 (D) Signal processing unit for photodiode module Unit dedicated for photodiode module (C1439 series) C1475 converts the output from a photodiode module (C1439 series) into digital signals. Also supplies power to the photodiode module. Features High-resolution digital output (16-bit) Choice of internal battery (+9 V) or AC adapter (+12 V) operation Data logger function C1475 Digital output Conforms to RS-232C (16-bit) Minimum measurement time interval (ms) 5 Supply voltage (V) +6 to +14 RS-232C cable is optional. Dimension 11 (W) 3 (H) 1 (D) (Ta=25 C) 27

31 9. Related product of Si photodiode sensor amplifier For low-light-level detection Digital output function, current-to-voltage conversion amplifier for amplifying very slight photocurrent with low noise Features Three sensitivity ranges Selectable operation modes (analog output / digital output) Serial connection (RS-232C) with PC Data logger function, low battery function Operates on either dry battery or AC adapter diode, coaxial cable with BNC-BNC plug and RS-232C cable is optional. Range Conversion impedance (V/A) Frequency bandwidth Dimension H 1 9 DC to 16 Hz C9329 M 1 7 DC to 16 Hz 115 (W) 4 (H) 9 (D) L 1 5 DC to 16 Hz With optical fiber Light-to-voltage conversion amplifier with optical fiber Features Easy handling Built-in photodiode allows easy detection of light just by connecting to a voltmeter. Optical fiber light input Measures light at a narrow detection point. Separating the amplifier from the detection point allows measurement in unusual environments and achieves low noise. Three sensitivity ranges Range sensitivity (mv/ W) Conversion impedance (V/A) Frequency bandwidth Dimension H DC to 1 MHz C M DC to 3 MHz 115 (W) 4 (H) 9 (D) L DC to 1 MHz High-speed type Current-to-voltage conversion amplifier for high-speed Si PIN photodiode Features Wide bandwidth DC to 1 MHz Typ. (-3 db; varied by the photodiode used) Easy photodiode connection Just inserting the photodiode lead pins makes the connection. (Compatible with TO-8, TO-5 and TO-18 packages) Adjustable response speed Response speed can be adjusted by a trimmer potentiometer easily Compact size Conversion impedance (V/A) Frequency bandwidth Dimension C DC to 1 MHz 2 (W) 46 (H) 52 (D) 28

32 9. Related product of Si photodiode Compact type Current-to-voltage conversion amp Features Compact type for easy assembly Usable with photodiodes having large terminal capacitance Conversion impedance: V/A Single +12 V supply voltage operation C951 Conversion impedance (V/A) Frequency bandwidth Dimension 1 8 DC to 16 Hz 5 (W) 5 (H) 19 (D) Charge amplifier For radiation and high energy particle detection H483 is a low-noise hybrid charge amplifier designed for a wide range of spectrometric applications including soft X-ray and low to high energy gamma-ray spectrometry. The first stage of this amplifier uses a low-noise junction type FET, which exhibits excellent performance when used with a photodiode having a large junction capacitance. H483 is especially suited for use with HAMAMATSU S359/S324 series, etc. Si PIN photodiodes. S359 series photodiodes can be directly mounted on the backside of H483, so there will be no increase in stray capaci- Features Low noise Compact and lightweight Easy handling Applications Detection of X-rays, radiation, high energy particles H483 Amplification method Chargesensitive type Input/ Noise Negative Power Current output Charge gain characteristic feedback supply consumption Dimension polarity (e - /FWHM) constant (V) (mw) Inverted.5 V/pC 22 mv/mev (Si) 55 5 MΩ//2 pf ± (W) 19 (H) 4 (T) 29

33 1. Description of terms 1. The photocurrent produced by a given level of incident light varies with the wavelength. This relation between the photoelectric sensitivity and wavelength is referred to as the spectral response characteristic and is expressed in terms of photo sensitivity, quantum efficiency, etc. 2. sensitivity: S This measure of sensitivity is the ratio of incident light expressed in watts (W) on the device, to the resulting photocurrent expressed in amperes (A). It may be represented as either an absolute sensitivity or as a relative sensitivity normalized for the sensitivity at the peak wavelength, usually expressed in percent (%) with respect to the peak value. At HAMAMATSU, we usually use absolute sensitivity to express photo sensitivity, and the spectral response range is defined as the region in which the relative sensitivity is higher than 5 % of the peak value. 3. Quantum efficiency: QE The quantum efficiency is the number of electrons or holes that can be detected as a photocurrent, divided by the number of incident photons. This is commonly expressed in percent (%). The quantum efficiency and photo sensitivity S have the following relationship at a given wavelength : QE = S [%] λ where S is the photo sensitivity in A/W at a given wavelength and λ is the wavelength in nm (nanometers). 4. Short circuit current: Isc The short circuit current is the output current which flows when the load resistance is and is nearly proportional to the device active area. This is often called white light sensitivity with regards to the spectral response. This value is measured with light from a tungsten lamp of 2856 K distribution temperature (color temperature), providing 1 lx illuminance. 5. Open circuit voltage: Voc The open circuit voltage is a photovoltaic voltage generated when the load resistance is infinite and exhibits a nearly constant value independent of the device active area. 6. Infrared sensitivity ratio This ratio is measured using a light flux of 1 lx emitted from a 2856 K light source, and is defined as the ratio of the output current IR measured when the light flux is passed through an R-7 (t=2.5 mm) infrared filter to the short circuit current Isc measured without using the infrared filter. It is commonly expressed in percent, as follows: IR Infrared sensitivity ratio = 1 [%] Isc 7. Dark current: ID The dark current is a small current which flows when a reverse voltage is applied to a photodiode even in dark state. This is a major source of noise for cases in which a reverse voltage is applied to photodiodes (PIN photodiode, etc.). 8. Shunt resistance: Rsh This shunt resistance is the voltage-to-current ratio in the vicinity of V in photodiodes and defined as follows: Where ID is the dark current at VR=1 mv. 1 [mv] Rsh [Ω] = ID [A] For applications where no reverse voltage is applied, noise resulting from the shunt resistance becomes predominant. 9. Terminal capacitance: Ct An effective capacitor is formed at the PN junction of a photodiode. Its capacitance is termed the junction capacitance and is one of parameters that determine the response speed of the photodiode. And it probably causes a phenomenon of gain peaking in I-V conversion circuit using operational amplifier. In HAMAMATSU, the terminal capacitance including this junction capacitance plus package stray capacitance is 1. Rise time: tr This is the measure of the time response of a photodiode to a stepped light input, and is defined as the time required for the output to change from 1 % to 9 % of the maximum light level (steady output level). The rise time depends on the incident light wavelength and load resistance. For the purpose of data sheets, it is measured with a light source of Ga- AsP LED (655 nm) or GaP LED (56 nm) and load resistance 11. Cut-off frequency: fc This is the measure used to evaluate the time response of highspeed PIN photodiodes to a sinewave-modulated light input. It is defined as the frequency at which the photodiode output decreases by 3 db from the output at 1 khz. The light source used is a laser diode (83 nm) and the load resistance is 5 Ω. The rise time tr has a relation with the cut-off frequency fc as tr [s] =.35 fc [Hz] 12. NEP (Noise Equivalent Power) The NEP is the amount of light equivalent to the noise level of a device. It is the light level required to obtain a signal-tonoise ratio of unity. Our data sheets show the NEP values measured at the peak wavelength λp. Since the noise level is proportional to the square root of the frequency bandwidth, the NEP is measured at a bandwidth of 1 Hz. NEP [W/Hz 1/2 ] = Noise current [A/Hz 1/2 ] sensitivity [A/W] at λp 13. Maximum reverse voltage: VR Max. Applying a reverse voltage to a photodiode triggers a breakdown at a certain voltage and causes severe deterioration of the device performance. Therefore the absolute maximum rating is specified for reverse voltage at the voltage somewhat lower than this breakdown voltage. The reverse voltage shall not exceed the maximum rating, even instanta- Reference Physical constant for light and opto-semiconductors Constant Symbol Value Unit Electron charge e or q c Speed of light in vacuum c m/s Planck s constant h J s Boltzmann s constant k J/K Room temperature.259 kt ev thermal energy (T=3 K) 1 ev energy ev J Wavelength in vacuum corresponding to 1 ev nm Dielectric constant of vacuum εo F/m Dielectric constant of Si εsi 12 approx. - Dielectric constant of Si oxide εox 4 approx. - Band gap energy of Si Eg 1.12 approx. (T=25 C) ev 3

34 11. Principle of operation, equivalent circuit Principle of operation Figure 1 shows a cross section of a photodiode. The P-layer material at the active surface and the N material at the substrate form a PN junction which operates as a photoelectric converter. The usual P-layer for a Si photodiode is formed by selective diffusion of boron, to a thickness of approximately 1 m or less and the neutral region at the junction between the P- and N-layers is known as the depletion layer. By controlling the thickness of the outer P-layer, N-layer and bottom N + -layer as well as the doping concentration, the spectral response and frequency response can be controlled. If the light energy is greater than the band gap energy (Eg), the electrons are pulled up into the conduction band, leaving holes in their place in the valence band (See Figure 2). These electronhole pairs occur throughout the P-layer, depletion layer and N- layer materials. In the depletion layer the electric field accelerates these electrons toward the N-layer and the holes toward the P-layer. Of the electron-hole pairs generated in the N-layer, the electrons, along with electrons that have arrived from the P- layer, are left in the N-layer conduction band. The holes at this time are being diffused through the N-layer up to the depletion layer while being accelerated, and collected in the P-layer valence band. In this manner, electron-hole pairs which are generated in proportion to the amount of incident light are collected in the N- and P-layers. This results in a positive charge in the P- layer and a negative charge in the N-layer. When the electrode are took out from the P-layer and N-layer, and connected to external circuit, electrons will flow away from the N-layer, and holes will flow away from the P-layer toward the opposite respective electrodes. These electrons and holes generating a current flow in a semiconductor are called the carriers. [Figure 1] Si photodiode cross section Equivalent circuit An equivalent circuit of a photodiode is shown in Figure 3. [Figure 3] diode equivalent circuit IL VD ID Rsh Rs I, IL : Current generated by the incident light (proportional to the amount of light) ID : Diode current Cj : Junction capacitance Rsh: Shunt resistance Rs : Series resistance I : Shunt resistance current VD : Voltage across the diode Io : Output current Vo : Output voltage KPDC4EA Using the above equivalent circuit, the output current Io is given as follows: qvd Io = IL - ID - I = IL - Is (exp - 1) -I... (1) kt Is: diode reverse saturation current q : Electron charge k : Boltzmann s constant T : Absolute temperature of the photodiode Cj Vo LOAD Io RL POSITIVE ELECTRODE (ANODE) SHORT WAVELENGTH INCIDENT LIGHT LONG WAVELENGTH P-LAYER INSULATION LAYER DEPLETION LAYER N-LAYER N N + [Figure 2] Si photodiode P-N junction state P-LAYER - DEPLETION LAYER N-LAYER NEGATIVE ELECTRODE (CATHODE) CONDUCTION BAND KPDC2EA The open circuit voltage Voc is the output voltage when Io equals. Thus Voc becomes ( ) Voc = kt IL ln - I (2) q Is If I is negligible, since Is increases exponentially with respect to ambient temperature, Voc is inversely proportional to the ambient temperature and proportional to the log of IL. However, this relationship does not hold for very low light levels. The short circuit current Isc is the output current when the load resistance RL equals and Vo equals, yielding: ( ) q (Isc Rs) Isc = IL - Is exp Isc Rs... (3) kt Rsh In the above relationship, the 2nd and 3rd terms limit the linearity of Isc. However, since Rs is several ohms and Rsh is 1 7 to 1 11 ohms, these terms become negligible over quite a wide range. INCIDENT LIGHT BAND GAP ENERGY VALENCE BAND KPDC3EA 31

35 12. Application circuit examples Low-light-level detection circuit Low-light-level detection circuits require measures for reducing electromagnetic noise in the surrounding area, AC noise from the power supply, and internal op amp noise, etc. Figure 4 shows one measure for reducing electromagnetic noise in the surrounding area. Extracting the photodiode signal from the cathode terminal is another effective means. An effective countermeasure against AC noise from the power supply is inserting an RC filter or an LC filter in the power supply line. Using a dry cell battery as the power supply also proves effective way. op amp noise can be reduced by selecting an op amp having a low 1/f noise and low equivalent input noise current. Moreover, high-frequency noise can be reduced by using a feedback capacitor (Cf) to limit the circuit frequency range to match the signal frequency bandwidth. Output errors (due to the op amp input bias current and input offset voltage, routing of the circuit wiring, circuit board surface leak current, etc.) should be reduced, next. A FET input op amp with input bias currents below a few hundred fa or CMOS input op amp with low 1/f noise are selected. Using an op amp with input offset voltages below several millivolts and an offset adjustment terminal will prove effective. Also try using a circuit board made from material having high insulation resistance. As countermeasures against current leakage from the surface of the circuit board, try using a guard pattern or elevated wiring with teflon terminals for the wiring from the photodiode to op amp input terminals and also for the feedback resistor (Rf) and feedback capacitor (Cf) in the input wiring. HAMAMATSU offers C6386-1, C951 and C9329 photosensor amplifiers optimized for use with photodiodes for low-lightlevel detection. [Figure 4] sensor amplifier (a) C (b) C951 (c) C9329 (b) Example using metal shielded box that contains entire circuit PD ISC Rf1 Rf2 SW1 SW2 (c) Example using optical fiber OPTICAL FIBER Cf IC2 6 3 Vo + IC TURN 1 POTENTIOMETER METAL SHIELDED BOX PD ISC Rf1 Rf2 +5 V -5 V KSPDC52EB Light-to-logarithmic-voltage conversion circuit The voltage output from a light-to-logarithmic voltage conversion circuit (Figure 6) is proportional to the logarithmic change in the detected light intensity. The log diode D for logarithmic conversion should have low dark current and low series resistance. A Base-Emitter junction of small signal transistors or Gate-Source junction of connection type of FETs can also be used as the diode. IB is the current source that supplies bias current to the log diode D and sets the circuit operating point. Unless this IB current is supplied, the circuit will latch up when the photodiode short circuit current ISC becomes zero. SW1 SW Cf IC2 6 3 Vo + IC TURN 1 POTENTIOMETER METAL SHIELDED BOX Bold lines should be within guarded pattern or on teflon terminals. IC1 : AD549, OPA124, etc. IC2 : OP7, etc. Cf : 1 pf to 1 pf, polystyrene capacitor Rf : 1 GΩ Max. SW: Low-leakage reed relay, switch PD : S1226/S1336/S2386 series, S2281, etc. Vo = Isc Rf [V] +5 V -5 V KSPDC53EB [Figure 6] Light-to-logarithmic-voltage conversion circuit [Figure 5] Low-light-level sensor head (a) Example using shielded cable to connect to photodiode METAL PACKAGE PD Isc SHIELDED CABLE BNC COAXIAL CABLE, etc Rf1 Rf2 The photodiodes, and coaxial cables with BNC-to-BNC plugs are sold separately. SW1 SW Cf IC2 6 3 Vo + IC TURN 1 POTENTIOMETER METAL SHIELDED BOX +5 V -5 V KSPDC51EC IB R PD Isc +15 V IC V D : Diode of low dark current and low series resistance IB : Current source for setting circuit operation point, IB << Isc R : 1 G to 1 GΩ Io : D saturation current, 1-15 to 1-12 A IC: FET input op amp Vo = -.6 log ( Isc + IB Io + 1) [V] KPDC21EA Light integration circuit This is a light integration circuit using integration circuits of photodiode and op amp and is used to measure the integrated power or average power of a light pulse train with an erratic pulse height, cycle and width. The integrator IC in the figure 7 accumulates short circuit current Isc generated by each light pulse in the integration capacitance C. By measuring the out- D Vo 32

36 voltage Vo immediately before reset, the average short circuit current can be obtained from the integration time (to) and the capacitance C. A low dielectric absorption type capacitor should be used as the capacitance C to eliminate reset errors. The switch SW is a CMOS analog switch. [Figure 7] Light integration circuit PD Isc C 13 2 SW 1 1 k V IC V +15 V 1 k Reset input: Use TTL L to reset. IC : LF356, etc. SW: CMOS 466 PD : S1226/S1336/S2386 series, etc. C : Polycarbonate capacitor, etc. 1 Vo = Isc to C [V] Basic illuminometer (1) A basic illuminometer circuit can be configured by using HAMA- MATSU C9329 photosensor amplifier and S9219 Si photodiode with sensitivity corrected to match human eye response. As shown in Figure 8, this circuit can measure illuminance up to a maximum of 1 lx by connecting the output of C9239 to a voltmeter in the 1 V range via an external resistive voltage divider. A standard light source is normally used to calibrate this circuit, but if not available, then a simple calibration can be performed with a 1 W incandescent bulb. To calibrate this circuit, first select the L range on C9329 and then turn the variable resistor VR clockwise until it stops. Block the light to S9219 while in this state, and rotate the zero adjusting volume control on C9329 so that the voltmeter reads mv. Next turn on the incandescent bulb, and adjust the distance between the incandescent bulb and S9219 so that the voltmeter display shows.225 V. (The illuminance on S9219 surface at this time is approximately 1 lx.) Then turn the VR counterclockwise until the voltmeter display shows.1 V. The calibration is now complete. After calibration, the output should be 1 mv/lx in the L range, and 1 mv/lx in the M range on C9329. [Figure 8] Basic illuminometer (1) PD 1 k RESET INPUT VO Isc VO RESET INPUT PHOTOSENSOR AMPLIFIER to 1 k t t t KPDC27EB Basic illuminometer (2) This is an basic illuminometer circuit using a visual-compensated Si photodiode S7686 and an op amp. A maximum of 1 lx can be measured with a voltmeter having a 1 V range. It is necessary to use a low consumption current type op amp which can operate from a single voltage supply with a low input bias current. An incandescent lamp of 1 W can be used for approximate calibrations in the same way as shown above Basic illuminometer (1). To make calibrations, first select the 1 mv/lx range and short the wiper terminal of the variable resistor VR and the output terminal of the op amp. Adjust the distance between the photodiode S7686 and the incandescent lamp so that the voltmeter reads.45 V. (At this point, illuminance on S7686 surface is about 1 lx.) Then adjust VR so that the voltmeter reads 1. V. Calibration has now been completed. [Figure 9] Basic illuminometer (2) Isc PD KPDC18ED Light balance detection circuit Figure 1 shows a light balance detector circuit utilizing two Si photodiodes PD1 and PD2 connected in reverse-parallel and an op amp current-voltage converter circuit. The photoelectric sensitivity is determined by the feedback resistance Rf. The output voltage Vo of this circuit is zero if the amount of light entering the two photodiodes PD1 and PD2 is equal. By placing two diodes D in reverse parallel with each other, Vo will be limited range to about ±.5 V in an unbalanced state, so that the region around a balanced state can be detected with high sensitivity. This circuit can be used for light balance detection between two specific wavelengths using optical [Figure 1] Light balance detection circuit ISC2 PD2 1 p IC + 4 ISC1 1 M 1 k 1 k VR: Meter calibration trimmer potentiometer IC : ICL7611, TLC271, etc. PD: S7686 (.45 A/1 lx) PD1.1 mv/lx 1 mv/lx 1 mv/lx Rf D VR k 6 p (9 V) D V - 7 IC V 5 1 k V VOLTMETER Vo ISC COAXIAL CABLE E2573 C9329 VR 5 5 CW EXTERNAL PARTIAL PRESSURE CIRCUIT V KSPDC54EB PD: S1226/S1336/S2386 series, etc. IC : LF356, etc. D : ISS27A, etc. Vo = Rf (Isc2 - Isc1) [V] (Vo < ±.5 V) KPDC17EB PD: S9219 (4.5 A/1 lx) 33

37 12. Application circuit examples Light absorption meter This is a light absorption meter using a dedicated IC which provides a logarithmic ratio of two current inputs and two photodiodes (See Figure 11). By measuring and comparing the light intensity from a light source and the light intensity after transmitting through a sample with two photodiodes, light absorbance by the sample can be measured. To make measurements, optical system such as the incident aperture should first be adjusted to become the output voltage Vo to V so that the short circuit current from the two Si photodiodes is equal. Next, the sample is placed on the light path of one photodiode. At this point, the output voltage value means the absorbance by the sample. The relationship between the absorbance A and the output voltage Vo can be directly read as A= -Vo [V]. If a filter is interposed before the light source as shown in the figure 11, the absorbance of specific light spectrum or monochromatic light can be measured. [Figure 11] Light absorption meter FILTER A : Log amp PD: S587, etc. SAMPLE Vo = log (Isc1/Isc2) [V] Isc2 Isc1 PD KPDC25EC Total emission measurement of LED Since the emitting spectral width of LEDs is usually as narrow as about several-ten nanometers, the amount of the LED emission can be calculated from the Si photodiode photo sensitivity at a peak emission wavelength of the LED. In Figure 12, the inner surface of the reflector block B is mirror-processed so that it reflects the light emitted from the side of the LED towards the Si photodiode. Therefore, the total amount of the LED emission can be detected by the Si - + A +15 V 1 p -15 V Vo High-speed photodetector circuit (1) The high-speed photodetector circuit shown in Figure 13 utilizes a low-capacitance Si PIN photodiode (with a reverse voltage applied) and a high-speed op amp current-voltage converter circuit. The frequency band of this circuit is limited by the op amp device characteristics to less than about 1 MHz. When the frequency band exceeds 1 MHz, the lead inductance of each component and stray capacitance from feedback resistance Rf exert drastic effects on device response speed. That effect can be minimized by using chip components to reduce the component lead inductance, and connecting multiple resistors in series to reduce stray capacitance. The photodiode leads should be kept as short as possible and the pattern wiring to the op amp should be made as short and thick as possible. This will lower effects from the stray capacitance and inductance occurring on the circuit board pattern of the op amp inputs and also alleviate effects from photodiode lead inductance. Moreover, a ground plane structure utilizing copper plating at ground potential across the entire board surface will prove effective in boosting device performance. A ceramic capacitor should be used as the.1 F capacitor connected to the op amp power line, and the connection to ground should be the minimum direct distance. HAMAMATSU offers C8366 photosensor amplifier for PIN photodiodes with a frequency bandwidth up to 1 MHz. [Figure 13] High-speed photodetector circuit (1) +15 V ISC 1 k PD Rf 51 Ω +15 V IC V PD: High-speed PIN photodiode (S5971, S5972, S5973, etc.) Rf : Two or more resistors are connected in series to eliminate parallel capacitance. IC : AD745, AD825, LT136, HA-2525, etc. Vo = -Isc Rf [V] [Figure 14] sensor amplifier C8366 Vo KPDC2ED [Figure 12] Total emission measurement of LED IF Isc LED Po PD A B A : Ammeter, 1 ma to 1 ma PD: S R B : Aluminum block, inner Au plating S : sensitivity of Si photodiode Refer to the spectral response chart in the data sheets S R: S=.58 A/W (λ=93 nm) Po : Total emission Po = Isc S [W] KPDC26EA High-speed photodetector circuit (2) The high-speed photodetector circuit in Figure 15 uses load resistance RL to convert the short circuit current from a low-capacitance Si PIN photodiode (with a reverse voltage applied) to a voltage, and amplifies the voltage with a high-speed op amp. There is no problem with gain peaking based due to phase shifts in the op amp. A circuit with a frequency bandwidth higher than 1 MHz can be attained by selecting the correct op amp. Points for caution in the components, pattern and structure are the same as those listed for the High-speed photodetector circuit (1). 34

38 12. Application circuit examples [Figure 15] High-speed photodetector circuit (2) [Figure 17] AC photodetector circuit (2) PD.1 RL Isc + +5 V 1 k A 2 - IC 4.1 R Rf 51 Ω Vo PD ISC p +15 V 1 k k.1 FET Vo -5 V RL 1 M RS.1 KPDC15EB PD : High-speed PIN photodiode (S5971, S5972, S5973, etc.) RL, R, Rf: Determined by recommended conditions of the op amp IC : OPA656, OPA657, AD81, etc. Vo = Isc RL (1 + [Figure 16] AC photodetector circuit (1) PD.1 RL Rf ) [V] R AC photodetector circuit (1) The AC photodetector circuit in Figure 16 uses load resistance RL to convert the photocurrent from a low-capacitance Si PIN photodiode (with a reverse voltage applied) to a voltage, and amplifies the voltage with a high-speed op amp. There is no problem with gain peaking based due to phase shifts in the op amp. A circuit with a frequency bandwidth higher than 1 MHz can be attained by selecting the correct op amp. Points for caution in the components, pattern and structure are the same as those listed for the High-speed photodetector circuit (1). Isc + C 1 r +5 V 1 k Ω A 2 - IC 4.1 Vo PD : High-speed PIN photodiode (S256-2, S5971, S5972, S5973, etc.) RL : Determined by sensitivity and time constant of Ct of photodiode Rs : Determined by operation point of FET FET: 2SK362, etc. KPDC14EC Operational amplifiers used in these circuit examples will differ in such factors as operating ambient temperature range, bias current, phase compensation and offset adjustment method depending on the type used. Refer to the manufacturer's data sheet or instruction manual. Typical operational amplifiers: Analog Devices: AD549, OP7, AD743, AD81 National Semiconductor: LF357, LF356, LF442 Intersil: ICL7611, HA-2525 Linear Tecnology: LT136 Sample circuits listed in this catalog introduce typical applications of Hamamatsu photodiodes and do not cover any guarantee of the circuit design. No patent rights are granted to any of the circuits described herein. R -5 V Rf KPDC15EC PD : High-speed PIN photodiode (S5971, S5972, S5973, etc.) RL, R, Rf, r: Determined by recommended conditions of the op amp IC : OPA656, OPA657, AD81, etc. Vo = Isc RL (1 + Rf ) [V] R AC photodetector circuit (2) This AC photodetector circuit utilizes a low capacitance PIN photodiode (with a reverse voltage applied) and a FET serving as a voltage amplifier. Using a low-noise FET allows producing a small yet inexpensive low-noise circuit, which can be used in light sensors for spatial light transmission and optical remote controls, etc. In Figure 18 the signal output is taken from the FET drain. However, for interface to a next stage circuit having low input resistance, the signal output can also be taken from the source or a voltage-follower should be added. 35

39 13. Packaging technology At the Solid State Division of Hamamatsu nics, we are constantly at work designing and developing our own package/mounting technology to offer unique semiconductor devices having special features. Now we will take a brief look at our package/mounting technology for Si photodiodes. (b) Mounting to an amplifier PHOTODIODE CHIP BUMP Variety of package types HAMAMATSU offers a diverse selection of package types to meet different customer needs (Figure 19). Metal packages are widely used in applications requiring high reliability. Ceramic packages are used for general applications and plastic packages are used in applications where the main need is low cost. A wide line of packages are also available for surface mounting. [Figure 19] Package examples (a) Metal (b) Ceramic AMP CHIP (c) Mounting an amplifier to a photodiode AMP CHIP BUMP Si PHOTODIODE CHIP KSPDC6EA (c) Plastic (d) Thin plastic CSP (Chip Size Package) technology In CSP type photodiodes, the chip and substrate are connected by bump electrodes so there is minimal dead area on the package surface area. This allows utilizing the photosensitive area more effectively. Also multiple devices can be densely arrayed and used in a tile format. There is no wiring so coupling to the scintillator is easy. [Figure 21] and cross section of CSP type photodiode (e) Surface mount type (f) With scintillator Si CHIP BUMP UNDERFIL RESIN Flip-chip mounting Mounting technology for opto-semiconductors includes not only the 2 stage chip die-bonding and wire-bonding mounting method but also the flip-chip mounting as shown in Figure 2. Parasitic capacitance and inductance can be a problem when extracting opto-semiconductor device signals from a wire. Flip-chip mounting can prevent this problem and help in downsizing since it utilizes a bump to directly join the chip to the package or an IC chip, [Figure 2] Example of flip chip mounting (a) Mounting to a board PHOTODIODE CHIP BOARD (PWB) SOLDER BALL KSPDC65EB Scintillator coupling HAMAMATSU also provides detectors configured by a photodiode and scintillator combination. X-rays and radiation converted to visible light by the scintillator are efficiently detected by the photodiode. (See Figure 19 (f).) BUMP PACKAGE MOUNTING SURFACE 36

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