InGaAs PIN photodiodes

Transcription

1 area from ϕ0.3 mm to ϕ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm to ϕ5 mm. Features Low noise, low dark current Low terminal capacitance Large photosensitive area Various photosensitive area sizes available Applications Laser monitors Optical power meters Laser diode life test NIR (near infrared) photometry Optical communications Options Amplifier for InGaAs PIN photodiode C Heatsink for one-stage A3179 Heatsink for two-stage A Temperature controller for TE-cooler type C Specifications/Absolute maximum ratings Type no. Dimensional outline/ Package Cooling material* 1 area Thermistor power dissipation TE-cooler allowable current Absolute maximum ratings TE-cooler Reverse Operating allowable voltage temperature* voltage 2 Storage temperature* 2 Soldering conditions (mm) (mw) (A) (V) (V) ( C) ( C) ϕ0.3 G A (1)/K TO-18 ϕ G A Noncooled ϕ ϕ to to G A (2)/K TO-5 5 G A ϕ3 G A (3)/K ϕ5 2 G A ϕ1 260 C or less, G A One-stage ϕ2 5 (4)/K within 10 s G A TE-cooled ϕ3 G A TO-8 ϕ G A ϕ1-40 to to +85 G A Two-stage ϕ2 5 (5)/K G A TE-cooled ϕ3 G A ϕ5 2 *1: K: borosilicate glass with anti-reflective coating (optimized for 1.55 μm peak) *2: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. 1

2 Electrical and optical characteristics (Typ. unless otherwise noted) Type no. Measurement condition Photosensitivity S Element temperature Spectral response range λ Peak sensitivity wavelength λp 1.3 μm λ=λp Dark current ID VR=1 V Temperature coefficient of dark current TID VR=1 V Cutoff frequency fc VR=1 V RL=50 Ω Terminal capacitance Ct VR=1 V f=1 MHz Shunt resistance Rsh VR=10 mv Detectivity D * λ=λp Noise equivalent power NEP λ=λp Min. Typ. Min. Typ. Typ. Max. Min. Typ. Typ. Max. Min. Typ. Min. Typ. Typ. Max. ( ) (μm) (μm) (A/W) (A/W) (A/W) (A/W) (na) (na) (MHz) (MHz) (pf) (pf) (MΩ) (MΩ) (cm Hz 1/2 /W) (cm Hz 1/2 /W) (W/Hz 1/2 ) (W/Hz 1/2 ) 0.1* 3 0.5* 3 450* 4 600* 4 5* 5 7.5* G A 0.15* * 3 160* 4 200* 4 15* 5 20* G A 0.8* to 1.7 4* 3 25* 4 60* 4 55* 5 120* G A G A G A G A G A to G A G A G A G A to G A G A *3: VR=5 V *4: VR=5 V, RL=50 Ω, -3 db *5: VR=5 V, f=1 MHz Spectral response Td=25 C Td=-10 C Td=-20 C (Typ.) Spectral transmittance characteristics of window material 100 (Typ. Ta=25 C) Photosensitivity (A/W) Transmittance (%) Wavelength (μm) Wavelength (μm) KIRDB0374EB KIRDB0545EA 2

3 Photosensitivity temperature characteristics Linearity Temperature coefficient of sensitivity (%/ C) (Typ. Ta=25 C) Relative sensitivity (%) (Typ. Ta=25 C, λ=1.3 μm, RL=2 Ω, VR=0 V) G A 98 G A G A G A Wavelength (μm) KIRDB0042EA Incident light level (mw) KIRDB0541EA Dark current vs. reverse voltage Non-cooled type 100 na 10 na G A (Typ. Ta=25 C) G A 1 na G A (Td=-10 C) G A (Td=-20 C) Solid line G A (Td=-10 C) (Typ.) G A (Td=-10 C) Dotted line G A 100 pa Dark current 1 na G A G A Dark current 10 pa 100 pa G A (Td=-20 C) 10 pa G A G A (Td=-20 C) (Td=-10 C) G A (Td=-20 C) 1 pa Reverse voltage (V) Reverse voltage (V) KIRDB0542EB KIRDB0607EA 3

4 Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature Terminal capacitance 10 nf 1 nf 100 pf 10 pf G A/-150A/-250A (Typ. Ta=25 C, f=1 MHz) G A/ -130A/-230A G A/ -120A/-220A G A/ -110A/-210A G A Shunt resistance 1 TΩ 100 GΩ 10 GΩ 1 GΩ 100 MΩ 10 MΩ 1 MΩ 100 kω G A/ -120A/-220A G A G A/ -130A/-230A G A/ -110A/-210A (Typ. VR=10 mv) 1 pf kω G A/-150A/-250A 1 kω Reverse voltage (V) KIRDB0543EB Element temperature ( C) KIRDB0544EB Thermistor temperature characteristics Cooling characteristics of TE-cooler 10 6 (Typ.) 40 (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W) 20 Resistance (Ω) Element temperature ( C) Two-stage One-stage Element temperature ( C) Current (A) KIRDB0116EA KIRDB0231EA 4

5 Current vs. voltage (TE-cooler) Dimensional outlines (unit: mm) 1.6 (Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W) (1) /-005A/-010A Current (A) One-stage Two-stage ϕ5.4 ± 0.2 ϕ4.7 ± 0.1 ϕ2.2 min. 2.6 ± ± min ϕ2.5 ± 0.2 Voltage (V) KIRDB0115EB Case KIRDA0150EC 5

6 (2) G A/-030A (3) G A ϕ9.2 ± 0.2 ϕ13.8 ± 0.2 ϕ8.3 ± 0.1 ϕ4.5 min. 2.5 ± ± 0.2 ϕ12.4 ± 0.1 ϕ7.0 min. 2.8 ± ± max. 18 min min. ϕ5.1 ± 0.3 ϕ7.5 ± 0.2 Index mark ϕ1.0 ϕ1.5 max. Case Case KIRDA0155EB KIRDA0052EC 6

7 (4) G A/-120A/-130A/-150A (5) G A/-220A/-230A/-250A ϕ15.3 ± 0.2 ϕ15.3 ± 0.2 ϕ14 ± 0.2 ϕ10 ± ± 0.2 ϕ14 ± 0.2 ϕ10 ± ± 0.2 A 12 min. A 10 ± min ± 0.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3 X Y +0.3 A G A 4.3 ± 0.2 G A /-130A/-150A 4.4 ± 0.2 KIRDA0246EA Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3 X Y +0.3 A G A 6.6 ± 0.2 G A /-230A/-250A 6.7 ± 0.2 KIRDA0247EA 7

8 Related information Precautions Notice Metal, ceramic, Plastic products Technical information Infrared detectors Information described in this material is current as of December, Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid State Division Ichino-cho, Higashi-ku, Hamamatsu City, Japan, Telephone: (81) , Fax: (81) U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J , U.S.A., Telephone: (1) , Fax: (1) Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D Herrsching am Ammersee, Germany, Telephone: (49) , Fax: (49) France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, Massy Cedex, France, Telephone: 33-(1) , Fax: 33-(1) United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) , Fax: (44) North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan Kista, Sweden, Telephone: (46) , Fax: (46) Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, Arese (Milano), Italy, Telephone: (39) , Fax: (39) China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing , China, Telephone: (86) , Fax: (86) Cat. No. KIRD1121E03 Dec DN 8