C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules

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1 DATASHEET Photon Detection C3659 Series 9/6/15/15E Excelitas C E InGaAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities. Excelitas Technologies C3659 Series includes a Si or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. The Si APDs used in these devices are the same as used in Excelitas C3817EH, C392EH, C3954EH and C3956EH products, while the InGaAs APDs are used in the C3645EH and C3662EH products. These detectors provide very good response between 83 and 15 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low noise GaAs FET front end designed to operate at higher transimpedance than Excelitas regular C39 Series. The C3659 series features an inverting amplifier design with an emitter follower used as an output buffer stage. It remains pin-to-pin compatible with the C39 Series. To obtain the wideband characteristics, the output of these devices should be capacitively- or AC-coupled to a Ω termination. The module must not be DCcoupled to loads of less than 2 kω. For field use, it is recommended that a temperature-compensated HV supply be employed to maintain a constant responsivity over temperature. Excelitas InGaAs C E Preamplifier Modules, with 15 nm peak response, are designed to exhibit higher damage thresholds, thus providing greater resilience when exposed to high optical power densities. Customization of the C3659 Series of APD Preamplifier Modules is available to meet your specific design challenges; modifications include bandwidth and gain optimization, use of different APDs, FC-connectorized packaging. C3659 Series-Rev Page 1 of Key Features System bandwidths of and 2MHz Ultra low noise equivalent power (NEP) Spectral response range: o With Si APD: 4 to 1 nm o With InGaAs APD: 1 to 17 nm Typical power consumption: 1 mw ±5 V amplifier operating voltages Ω AC load capability (AC-Coupled) Hermetically-sealed TO-8 package High reliability Fast overload recovery Pin-to-pin compatible with the C39 Light entry angle, over 13 Model 15E exhibits enhanced damage threshold RoHS-compliant Applications LIDAR Range finding Laser designation Confocal microscopy High-speed, extreme low-light detection Distributed temperature sensing (DTS) Analytical instrumentation High-speed, free-space optical communication

2 C3659 Series 9/6/15/15E Table 1. Performance Specifications C Models (9 nm peak response Si APD) Test conditions: Case temperature = 22 C, Vamp = ±5 V, HV = Vop (see Note 1), RL = Ω AC coupled Detector Type C R8AH (C3817EH APD) C R5BH (C392EH APD) Parameter Min Typical Max Min Typical Max Units Active diameter.8.5 mm Active area.5.2 mm² Nominal field of view α (see Figure 8) Degrees Nominal field of view α (see Figure 8) Degrees System bandwidth, f-3db MHz Bandwidth range 2 MHz Temperature coefficient of Vop for constant gain V/ C Vop for specified responsivity 275 Note Note 1 26 V Temperature sensor sensitivity (Note 2) mv/ C Responsivity at 83 nm at 9 nm Rf (Internal feedback resistor) Noise equivalent power (NEP) (Note 3) Average from khz to f-3db, f = 1. Hz at 83 nm at 9 nm Output spectral noise voltage Averaged from khz to f-3db Output impedance Ω Rise time, tr ( = 83 and 9 nm) % to 9% points Fall time, tf ( = 83 and 9 nm) 9% to % points kω fw/hz fw/hz nv/hz Recovery time after overload (Note 4) 1 1 ns Output voltage swing (1 kω load) (Note 5) Vpp Output voltage swing ( Ω load) (Note 5) Vpp DC output offset voltage VDC Positive supply current (V+) ma Negative supply current (V-) 2 2 ma Notes: 1. A specific value of Vop is supplied with each device. The Vop value will be within the specified range. 2. If =.1 ma at 25 C. 3. NEP is calculated as the output spectral noise voltage divided by the typical responsivity. 4. dbm with 2 ns pulses. 5. Pulsed operation, AC-coupled. Page 2 of C3659 Series-Rev

3 C3659 Series 9/6/15/15E Table 2. Performance Specifications C Models (6 nm optimized response Silicon APD) Test conditions: Case temperature = 22 C, Vamp = ±5 V, HV = Vop (see Note 1), RL = Ω AC coupled Detector type C AH (C3956EH APD) C R8BH (C3954EH APD) Parameter Min Typical Max Min Typical Max Units Active diameter 3..8 mm Active area mm² Nominal field of view α (see Figure 8) Degrees Nominal field of view α (see Figure 8) Degrees System bandwidth, f-3db MHz Bandwidth range 2 MHz Temperature coefficient of Vop for constant gain V/ C Vop for specified responsivity 275 Note Note V Temperature sensor sensitivity (Note 2) mv/ C Responsivity at 9 nm at 64 nm Rf (Internal feedback resistor) Noise equivalent power (NEP) (Note 3) Average from khz to f-3db, f = 1. Hz at 9 nm at 64 nm Output spectral noise voltage Averaged from khz to f-3db Output impedance Ω Rise time, tr ( = 9 and 64 nm) % to 9% points Fall time, tf ( = 9 and 64 nm) 9% to % points kω fw/hz fw/hz nv/hz Recovery time after overload (Note 4) 1 1 ns Output voltage swing (1 kω load) (Note 5) Vpp Output voltage swing ( Ω load) (Note 5) Vpp DC output offset voltage VDC Positive supply current (V+) ma Negative supply current (V-) 2 2 ma Notes: 1. A specific value of Vop is supplied with each device. The Vop value will be within the specified range. 2. If =.1 ma at 25 C. 3. NEP is calculated as the output spectral noise voltage divided by the typical responsivity. 4. dbm with 2 ns pulses. 5. Pulsed operation, AC-coupled Page 3 of C3659 Series-Rev

4 C3659 Series 9/6/15/15E Table 3. Performance Specifications C /15E Models (15 nm peak response InGaAs APD) Test conditions: Case temperature = 22 C, Vamp = ±5 V, HV = Vop (see Note 1), RL = Ω AC coupled Detector type C R2AH C E-R2AH (C3662EH APD) C R8BH C E-R8BH (C3645EH APD) Parameter Min Typical Max Min Typical Max Units Active diameter.2.8 mm Active area.3.5 mm² Nominal field of view α (see Figure 8) Degrees Nominal field of view α (see Figure 8) Degrees System bandwidth, f-3db MHz Bandwidth range 2 MHz Temperature coefficient of Vop for constant gain.2.2 V/ C Vop for specified responsivity 4 Note Note 1 7 V Temperature sensor sensitivity (Note 2) mv/ C Responsivity at 13 nm at 15 nm Rf (Internal feedback resistor) Noise equivalent power (NEP) (Note 3) Average from khz to f-3db, f = 1. Hz at 13 nm at 15 nm Output spectral noise voltage Averaged from khz to f-3db Output impedance Ω Rise time, tr ( = 13 and 15 nm) % to 9% points Fall time, tf ( = 13 and 15 nm) 9% to % points kω fw/hz fw/hz nv/hz Recovery time after overload (Note 4) 1 1 ns Output voltage swing (1 kω load) (Note 5) Vpp Output voltage swing ( Ω load) (Note 5) Vpp DC output offset voltage VDC Positive supply current (V+) ma Negative supply current (V-) 2 2 ma Notes: 1. A specific value of Vop is supplied with each device. The Vop value will be within the specified range. 2. If =.1 ma at 25 C. 3. NEP is calculated as the output spectral noise voltage divided by the typical responsivity. 4. dbm with 2 ns pulses. 5. Pulsed operation, AC-coupled. Page 4 of C3659 Series-Rev

5 C3659 Series 9/6/15/15E Table 4. Absolute Maximum Ratings, Limiting Values Detector type C R8AH (Silicon APD) C R5BH (Silicon APD) C Models (Silicon APD) C (E) Models (InGaAs APD) Parameter Min Max Min Max Min Max Min Max Units Photodiode bias voltage (Note 1) at T A = +7 C at T A = -4 C Incident radiant flux, Φ M, (Note 2) average (Note 3) peak (Note 4) peak (Note 5) (for -15) (for 15E) V V 2 mw mw kw/cm² Case temperature storage, T stg operating, T A C C Preamplifier bias voltage ±4.5 ±5.5 ±4.5 ±5.5 ±4.5 ±5.5 ±4.5 ±5.5 V Notes: 1. The operating voltage (V op) must remain below the breakdown voltage (V br), these values are worst-case estimates. HV voltage current should be limited externally to less than 1 ma. 2. As demonstrated in laboratory conditions. 3. Based on.5 W electrical power on the high voltage (HV) supply. 4. Test with ns pulse width. 5. Tested at 64 nm, ns pulse width and 1 khz pulse repetition rate. Figure 1. Schematic Block Diagram C3659 Series Page 5 of C3659 Series-Rev

6 Responsivity [] Responsivity [] Responsivity [] Responsivity [] Responsivity [] C3659 Series 9/6/15/15E Figure 2. Typical Spectral Responsivity C R8AH Wavelength [nm] C /15E-R2AH Wavelength [nm] C AH C R5BH C R8BH Wavelength [nm] C /15E-R8BH Wavelength [nm] Figure 3. Typical Responsivity as a Function of Operating Voltage C3659-(9/6) Series C R5BH C AH C R8BH C R8AH Operating Voltage [V] Page 6 of C3659 Series-Rev

7 Normalized output noise voltage Normalized frequency response [db] Responsivity [] C3659 Series 9/6/15/15E Figure 4. Typical Responsivity as a function of Operating Voltage C3659-(15/15E) Series C /15E-R2AH C /15E-R8BH Operating Voltage [V] Figure 5. Typical Noise and Frequency response curves MHz 2 MHz MHz 2 MHz 1 Frequency [MHz] -8 1 Frequency [MHz] Output voltage noise normalization is calculated using the following formula: V n Vn, where normalize Vn average V naverage V Hz f3db 2 Vn khz f 3dB df Page 7 of C3659 Series-Rev

8 Responsivity () Responsivity () Responsivity () Responsivity () Responsivity () Responsivity () C3659 Series 9/6/15/15E Figure 6. Typical variation of responsivity as a function of temperature C R8AH responsivity at 9 nm C R5BH responsivity at 9 nm C AH responsivity at 6 nm C R8BH responsivity at 6 nm C (E)-R8BH responsivity at 15 nm C (E)-R2AH responsivity at 15 nm Page 8 of C3659 Series-Rev

9 C3659 Series 9/6/15/15E Figure 7. Mechanical Characteristics C3659 Series reference dimensions shown in mm [inches] Figure 8. Approximate field of view C3659 Series For incident radiation at angles α/2, the photosensitive surface is totally illuminated. For incident radiation at angles > α/2, but α /2, the photosensitive surface is partially illuminated. Page 9 of C3659 Series-Rev

10 C3659 Series 9/6/15/15E Table 5 Ordering guide Model Nominal Bandwidth Wavelength Response Detector Type Detector Material Active Diameter C R8AH MHz 9 nm C3817EH Silicon.8 mm C R5BH 2 MHz (peak) C392EH.5 mm C AH MHz 64 nm C3956EH 3. mm C R8BH 2 MHz (optimized) C3954EH.8 mm C R2AH MHz 15 nm C3662EH InGaAs.2 mm C E-R2AH (peak) C R8BH 2 MHz C3645EH.8 mm C E-R8BH Comments Enhanced damage threshold Enhanced damage threshold RoHS Compliance The C3659 Series of APD Preamplifier Modules are designed and built to be fully compliant with the European Union Directive 211/65/EU Restriction of the use of certain Hazardous Substances (RoHS) in Electrical and Electronic equipment. About Excelitas Technologies Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection and other high-performance technology needs of OEM customers. Excelitas has a long and rich history of serving our OEM customer base with optoelectronic sensors and modules for more than 45 years beginning with PerkinElmer, EG&G, and RCA. The constant throughout has been our innovation and commitment to delivering the highest quality solutions to our customers worldwide. From aerospace and defense to analytical instrumentation, clinical diagnostics, medical, industrial, and safety and security applications, Excelitas Technologies is committed to enabling our customers' success in their specialty end-markets. Excelitas Technologies has approximately 5, employees in North America, Europe and Asia, serving customers across the world. Excelitas Technologies 221 Dumberry Road Vaudreuil-Dorion, Quebec Canada J7V 8P7 Telephone: (+1) Toll-free: (+1) Fax: (+1) detection.na@excelitas.com Excelitas Technologies GmbH & Co. KG Wenzel-Jaksch-Str. 31 D Wiesbaden Germany Telephone: (+49) Fax: (+49) detection.europe@excelitas.com Excelitas Technologies International Sales Office Bat HTDS BP 246, Massy Cedex, France Telephone: +33 (1) europedefense@excelitas.com Excelitas Technologies Singapore, Pte. Ltd. 8 Tractor Road Singapore Telephone: (+65) (Main number) Telephone: (+65) (Customer Service) Fax: (+65) detection.asia@excelitas.com For a complete listing of our global offices, visit Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries that are depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors. Page of C3659 Series-Rev