InGaAs PIN photodiodes

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1 Long wavelength type (cutoff wavelength: 2.05 to 2.1 μm) Features Cutoff wavelength: 2.05 to 2.1 μm Low cost Photosensitive area: φ0.3 to φ3 mm Low noise High sensitivity High reliability High-speed response Applications Optical power meters Gas analyzers Moisture meters NIR (near infrared) photometry Options Amplifier for InGaAs PIN photodiode C Heatsink for one-stage A3179 Heatsink for two-stage A Temperature controller for C Structure Type no. Dimensional outline Photosensitive area /Window material* 1 Package Cooling (mm) φ0.3 G K (1)/B TO-18 φ0.5 G K Non-cooled φ1 G K φ2 (2)/B TO-5 G K φ3 φ0.3 G K φ0.5 One-stage G K (3)/B TO-8 φ1 TE-cooled G K φ2 G K φ3 φ0.3 G K φ0.5 Two-stage G K (4)/B TO-8 φ1 TE-cooled G K φ2 G K φ3 *1: B=Borosilicate glass 1

2 Absolute maximum ratings Type no. Thermister power dissipation Pd_th TE-cooler allowable current ITE max TE-cooler allowable voltage VTE max Reverse voltage VR max Operating temperature Topr Storage temperature Tstg Soldering conditions (mw) (A) (V) (V) ( C) ( C) G K G K G K G K to +85* 2-55 to +125* 2 G K 260 C or less, G K within 10 s G K G K to +70* 2-55 to +85* 2 G K G K G K G K Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *2: No dew condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. The may be destroyed or deteriorated by electrostatic discharge, etc. Be carefull when using the. Electrical and optical characteristics (, unless otherwise noted) Type no. Measurement Condition Element temperature Tchip ( C) Thermistor resistance Rth Thermistor B constant B Spectral response range λ (μm) Peak sensitivity wavelength λp Photo sensitivity S λ=λp Dark current ID VR=0.5 V Min. Max. (kω) (K) (μm) (A/W) (A/W) (na) (na) G K G K to G K G K G K 3 30 G K to G K G K G K G K to G K G K Temp. coefficient of ID VR=0.5 V (times/ C)

3 Measurement Cutoff frequency Terminal capacitance Shunt resistance Detectivity Noize equivalent power Condition fc Ct Rsh D VR=0 V VR=0 V NEP Element Type no. VR=10 mv λ=λp λ=λp temperature RL=50 Ω f=1 MHz Tchip ( C) Min. (MHz) (MHz) (pf) Max. (pf) Min. (MΩ) (MΩ) Min. (cm Hz 1/2 /W) (cm Hz 1/2 /W) (W/Hz 1/2 ) Max. (W/Hz 1/2 ) G K G K G K G K G K G K G K G K G K G K G K G K Spectral response Td=25 C Td=-10 C Td=-20 C ( VR=0 V) Spectral transmittance of window material 100 ( Ta=25 C) Photosensitivity (A/W) Transmittance (%) Wavelength (μm) Wavelength (μm) KIRDB0487EC KIRDB0638EA 3

4 Temperature coefficient of sensitivity (%/ C) Photosensitivity temperature characteristics ( VR=0 V) Wavelength (μm) KIRDB0641EA Relative sensitivity (%) Linearity (G K) ( Ta=25 C, λ=1.3 μm, RL=2 Ω, VR=0 V) Incident light level (mw) 10 KIRDB0537EA Dark current vs. reverse voltage Non-cooled type 10 μa ( Ta=25 C) 1 μa G K (Td=-10 C) () 1 μa G K G K 100 na G K (Td=-20 C) Dark current 100 na G K G K Dark current 10 na G K (Td=-10 C) G K (Td=-20 C) G K (Td=-10 C) G K (Td=-20 C) G K (Td=-10 C) 10 na 1 na na G K (Td=-20 C) (Td=-10 C) (Td=-20 C) 100 pa Reverse voltage (V) Reverse voltage (V) KIRDB0488EA KIRDB0530EA 4

5 Terminal capacitance Terminal capacitance vs. reverse voltage ( Ta=25 C, f=1 MHz) 10 nf G K/-130K/-230K 1 nf G K/-120K/-220K 100 pf G K/-110K/-210K 10 pf G K/-105K/-205K /-103K/-203K 1 pf Shunt resistance Shunt resistance vs. element temperature 1 GΩ 100 MΩ 10 MΩ 1 MΩ 100 kω 10 kω 1 kω ( VR=10 mv) /-103K/-203K G K/-105K/-205K G K/-110K/-210K G K/-120K/-220K G K/-130K/-230K 100 Ω Reverse voltage Element temperature ( C) KIRDB0489EB KIRDB0490EB The operating temperature for one-stage and two-stage s is up to 70 C. Thermistor temperature characteristics Cooling characteristics of TE-cooler 10 6 () 40 ( Ta=25 C, Thermal resistance of heatsink=3 C/W) 20 Resistance (Ω) Element temperature ( C) Two-stage One-stage Element temperature ( C) Current (A) KIRDB0116EA KIRDB0231EA 5

6 Current vs. voltage (TE-cooler) 1.6 ( Ta=25 C, Thermal resistance of heatsink=3 C/W) One-stage Current (A) Two-stage Voltage (V) KIRDB0115EB Dimensional outlines (unit: mm) /-005K/-010K G K/-030K 5.4 ± ± ± ± max. Window 3.0 ± ± ± max. Window 5.9 ± ± ± 0.2 Photosensitive surface 0.45 Lead 13 min. Photosensitive surface 0.45 Lead 0.4 max. 18 min ± ± max. Case Case Distance from photosensitive area center to cap center -0.2 X Y +0.2 KIRDA0220EA Distance from photosensitive area center to cap center -0.2 X Y +0.2 KIRDA0221EA 6

7 (3) /-105K/-110K/-120K/-130K (4) /-205K/-210K/-220K/-230K 15.3 ± ± max. 14 ± 0.2 Window 10 ± ± max. 14 ± 0.2 Window 10 ± 0.2 Photosensitive surface 0.45 Lead 10.2 ± 0.2 A 12 min. Photosensitive surface 0.45 Lead A 10 ± min ± 0.2 A Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3 X Y +0.3 /-105K/-110K 4.3 ± 0.2 G K /-130K 4.4 ± 0.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3 X Y +0.3 /-205K/-210K G K /-230K KIRDA0226EA A 6.6 ± ± 0.2 KIRDA0227EA 7

8 Related information Precautions Disclaimer Safety consideration Metal, ceramic, plastic package products Technical information Infrared detectors Information described in this material is current as of October Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid State Division Ichino-cho, Higashi-ku, Hamamatsu City, Japan, Telephone: (81) , Fax: (81) U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J , U.S.A., Telephone: (1) , Fax: (1) , Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D Herrsching am Ammersee, Germany, Telephone: (49) , Fax: (49) , France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, Massy Cedex, France, Telephone: 33-(1) , Fax: 33-(1) , United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) , Fax: (44) , info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan Kista, Sweden, Telephone: (46) , Fax: (46) , info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, Arese (Milano), Italy, Telephone: (39) , Fax: (39) , info@hamamatsu.it China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing , China, Telephone: (86) , Fax: (86) , hpc@hamamatsu.com.cn Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886) , Fax: (886) , info@tw.hpk.co.jp Cat. No. KIRD1118E04 Oct DN 8

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