MSV SEMI. Power MOSFET 200 mamps, 50 Volts N Channel SC-70 BSS139W 1. FEATURES. 2. MAXIMUM RATINGS(Ta = 25oC) 3. THERMAL CHARACTERISTICS 1/7

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1 Power MOSFET 200 mamps, 50 Volts N Channel SC FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. Low threshold voltage (VGS(th): 0.5V...1.5V) makes it ideal for low voltage applications. ESD Protected:1500V SC70(SOT-323) 2. MAXIMUM RATINGS(Ta = 25oC) Parameter Symbol Limits Drain Source Voltage VDSS 50 Gate to Source Voltage Continuous VGS ±20 Drain Current Continuous TA = 25 C Pulsed (tp 10μs) ID IDM Unit madc 3. THERMAL CHARACTERISTICS Parameter Symbol Limits Unit Total Device Dissipation, FR 4 Board (Note TA = 25ºC Derate above 25ºC Thermal Resistance, Junction to Ambient(Note 1) Junction and Storage temperature Maximum Lead Temperature for Solder Purposes, for 10 seconds 1. FR 4 = in. PD RΘJA TJ,Tstg TL mw mw/ºc ºC/W ºC ºC 1/7

2 4. ELECTRICAL CHARACTERISTICS (Ta= 25 ºC ) OFF CHARACTERISTICS Characteristic Drain Source Breakdown Voltage (VGS = 0, ID = 250μAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 25 ) (VGS = 0, VDS = 50 ) Gate Body Leakage Current, Forward (VGS = 20 ) Gate Body Leakage Current, Reverse (VGS = - 20 ) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = madc) Static Drain Source On State Resistance (VGS = 2.75, ID < 200 madc, TA = 40 C to +85 C) (VGS = 5.0, ID = 200 madc) Forward Transconductance (VDS = 25, ID = 200 madc, f = khz) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25, VGS = 0, f = MHz) Output Capacitance (VDS = 25, VGS = 0, f = MHz) Reverse Transfer Capacitance (VDS = 25, VGS = 0, f = MHz) SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time (VDD = 30, VGEN = 10 V,RG =25Ω,RL =60 Ω,ID =500 madc) 2.Pulse Test: Pulse Width 300 μs, Duty Cycle %. Symbol VBRDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gfs Ciss Coss Crss td(on) td(off) Min. Typ. Max Unit μadc μadc μadc Ohms ms pf pf pf ns 2/7

3 5. ELRCTRICAL CHARACTERISTICS CURVES Power Dissipation Drain Current 0.5 Ptot - Power (W) 0.3 T A =25 o C T A =25 o C,V G =10V Safe Operation Area Thermal Transient Impedance E-3 300us 1ms 10ms 100ms 1s DC T C = 25 o C Rds(on) Limit 100us Normalized Effective Transient Duty = 0.5 Single Pulse Mounted on 1in 2 pad R θja : 150 o C/W 1 1E-4 1E V DS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) 3/7

4 6.ELRCTRICAL CHARACTERISTICS CURVES(Con.) Output Characteristics 2.6 = 4,5,6,8,10 V 3.0 V RDS(ON) - On Resistance (Ω) = 4.5V V DS - Drain-Source Voltage (V) I D - Drain Current (A) RDS(ON) - On Resistance (Ω) Transfer Characteristics I D Normalized Threshold Voltage Gate Threshold Voltage I DS = 250 μa Gate-Source Voltage (V) 4/7

5 7.ELRCTRICAL CHARACTERISTICS CURVES(Con.) I D Source-Drain Diode Forward 2 Normalized On Resistance R = 25 o C: Ω IS - Source Current (A) 1 = 150 o C =25 o C V SD - Source-Drain Voltage (V) C - Capacitance (pf) Ciss Coss Crss Capacitance Frequency = 1 MHz VGS - Gate-Source Voltage (V) V DS I DS Gate Charge V DS - Drain-Source Voltage (V) Q G - Gate Charge (pc) 5/7

6 8.ELRCTRICAL CHARACTERISTICS CURVES(Con.) I D 3.0 = 4.5V 2.8 = 125 O C Normalized On Resistance = 4.5 V R = 25 o C: Ω RDS(ON) On Resistance(Ω) 2.6 = 85 O C = 25 O C = -55 O C I D - Drain Current (A) = 10V RDS(ON) On Resistance(Ω) 2.6 = 125 O C = 85 O C = 25 O C = -55 O C =125 o C =25 o C =-55 o C I D - Drain Current (A) Gate Voltage (V) 6/7

7 9.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A A2 0.70REF 28REF b c D E e e1 5REF 26REF L H E SOLDERING FOOTPRINT 7/7