NTD80N02T4G. Power MOSFET 80 Amps, 24 Volts. N Channel DPAK
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1 NTD8N2 Power MOSFET 8 Amps, 2 Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Package May be Available. The GSuffix Denotes a PbFree Lead Finish Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage VDSS 2 Vdc GatetoSource Voltage Continuous VGS ±2 Vdc Drain Current TC = 25 C ID 8* Adc Drain Current Single Pulse (tp = µs) IDM 2 Total Power TC = 25 C PD 75 Watts Operating and Storage Temperature Range Single Pulse DraintoSource Avalanche Energy Starting (VDD = 2 Vdc, VGS = Vdc, IL = 7 Apk, L = 5. mh, RG = 25 Ω) Thermal Resistance JunctiontoCase JunctiontoAmbient (Note ) JunctiontoAmbient (Note 2) Maximum Lead Temperature for Soldering Purposes, /8 from case for seconds TJ, Tstg 55 to 5 C EAS 733 mj RθJC RθJA RθJA C/W TL 26 C. When surface mounted to an FR board using pad size, (Cu Area.27 in2). 2. When surface mounted to an FR board using the minimum recommended pad size, (Cu Area.2 in2). *Chip current capability limited by package. G NChannel D S Gate 2 3 CASE 369AA (Bend Lead) STYLE 2 Drain YWW 8 N2 2 Drain Y WW 8N2 V(BR)DSS RDS(on) TYP 2 V 5. m MARKING DIAGRAMS & PIN ASSIGNMENTS 3 Source Gate = Year = Work Week = Device Code 2 3 Drain 2 Drain CASE 369D (Straight Lead) STYLE 2 YWW 8 N2 ORDERING INFORMATION ID MAX 8 A 3 Source Device Package Shipping NTD8N2 75 Units/Rail NTD8N2T 25 / Tape & Reel NTD8N2TG NTD8N2 PbFree Straight Lead 25 / Tape & Reel 75 Units/Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Semiconductor Components Industries, LLC, 23 December, 23 Rev. 2 Publication Order Number: NTD8N2/D
2 NTD8N2 ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) (VGS = Vdc, ID = 25 µadc) Positive Temperature Coefficient Zero Gate Voltage Drain Current (VGS = Vdc, VDS = 2 Vdc) (VGS = Vdc, VDS = 2 Vdc, ) V(BR)DSS GateBody Leakage Current (VGS = ±2 Vdc, VDS = Vdc) IGSS ± nadc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 25 µadc) Negative Threshold Temperature Coefficient Static DraintoSource OnResistance (Note 3) (VGS = Vdc, ID = 8 Adc) (VGS =.5 Vdc, ID = Adc) (VGS = Vdc, ID = 2 Adc) (VGS =.5 Vdc, ID = 2 Adc) IDSS VGS(th) RDS(on) Forward Transconductance (VDS = 5 Vdc, ID = Adc) (Note 3) gfs 2 Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note ) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate GaeCharge age SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (IS = 2 Adc, VGS = Vdc) (Note 3) (IS = Adc, VGS = Vdc) (IS = 2 Adc, VGS = Vdc, TJ = 5 C) Reverse e Recovery e Time (IS = 2 Adc, VGS = Vdc, dis/dt = A/µs) (Note 3) Vdc mv/ C µadc Vdc mv/ C mω Ciss 225 pf (VDS = 2 Vdc, VGS = V, Coss 9 f =. MHz) Crss =5Vdc td(on) 7 ns (VGS.5 Vdc, tr 67 VDD = 2 Vdc, ID = 2 Adc, td(off) 28 RG = 2.5 Ω) tf QT 3 nc (VGS =.5 Vdc, ID = 2 Adc, Q 7. VDS = 2 Vdc) (Note 3) Q2 8 VSD Vdc trr 38 ns ta 2 tb 8 Reverse Recovery Stored Charge Qrr.36 µc 3. Pulse Test: Pulse Width 3 µs, Duty Cycle 2%.. Switching characteristics are independent of operating junction temperatures. 2
3 NTD8N2 ID, DRAIN CURRENT (AMPS) V 8 V 6.5 V. V.6 V.8 V 5 V 5.2 V 6 V VDS, DRAINTOSOURCE VOLTAGE (V) Figure. OnRegion Characteristics.2 V V 3.8 V 3.6 V 3. V 3.2 V VGS = 3. V ID, DRAIN CURRENT (AMPS) 6 5 VDS 2 V TJ = 55 C VGS, GATETOSOURCE VOLTAGE (V) Figure 2. Transfer Characteristics RDS(on), DRAINTOSOURCE RESISTANCE (Ω) ID = A VGS, GATETOSOURCE VOLTAGE (V) RDS(on), DRAINTOSOURCE RESISTANCE (Ω) VGS =.5 V VGS = V ID, DRAIN CURRENT (A) Figure 3. OnResistance versus GateToSource Voltage Figure. OnResistance versus Drain Current and Gate Voltage RDS(on), DRAINTOSOURCE RESISTANCE TJ, JUNCTION TEMPERATURE ( C) ID = 8 A VDS =.5 V ID = 8 A VDS = V IDSS, LEAKAGE (na).. VGS = V TJ = C VDS, DRAINTOSOURCE VOLTAGE (V) Figure 5. OnResistance Variation with Temperature Figure 6. DrainToSource Leakage Current versus Voltage 3
4 NTD8N2 C, CAPACITANCE (pf) Ciss Coss Crss VGS = V VGS VDS GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V) Figure 7. Capacitance Variation VGS, GATETOSOURCE VOLTAGE (V) 8 6 VD Q Q2 QT VGS 8 2 ID =. A Qg, TOTAL GATE CHARGE (nc) Figure 8. GatetoSource and DraintoSource Voltage versus Total Charge VDS, DRAINTOSOURCE VOLTAGE (V) t, TIME (ns) VDD = 2 V ID = 2 A VGS = V tr tf td(off) td(on) IS, SOURCE CURRENT (AMPS) VGS = V RG, GATE RESISTANCE (Ω) Figure 9. Resistive Switching Time Variation versus Gate Resistance VSD, SOURCETODRAIN VOLTAGE (V) Figure. Diode Forward Voltage versus Current
5 NTD8N2 ID, DRAIN CURRENT (AMPS). VGS = V SINGLE PULSE TC = 25 C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT VDS, DRAINTOSOURCE VOLTAGE (VOLTS) s ms ms dc IS tp di/dt ta trr tb.25 IS IS TIME Figure. Maximum Rated Forward Biased Safe Operating Area Figure 2. Diode Reverse Recovery Waveform Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE. DUTY CYCLE D =.5 MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT P(pk) t t 2 DUTY CYCLE, D = t/t2 Figure 3. Thermal Response Various Duty Cycles RθJA(t) = r(t) RθJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TA = P(pk) RθJA(t) SINGLE PULSE. E5 E E3 E2 E E+ E+ E+2 E+3 t, TIME (seconds) 5
6 NTD8N2 PACKAGE DIMENSIONS CASE 369AA ISSUE O V S F B R 2 3 L A J C D 2 PL.3 (.5) M T T SEATING PLANE E U Z NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F J L.9 BSC 2.29 BSC R S U.2.5 V Z STYLE 2: PIN. GATE 2. DRAIN 3. SOURCE. DRAIN SOLDERING FOOTPRINT* SCALE 3: mm inches Figure. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 6
7 NTD8N2 CASE 369D ISSUE B V B R C E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, CONTROLLING DIMENSION: INCH. S T SEATING PLANE F 2 3 G A K D 3 PL J.3 (.5) M T H Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.9 BSC 2.29 BSC H J K R S V Z STYLE 2: PIN. GATE 2. DRAIN 3. SOURCE. DRAIN 7
8 NTD8N2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 29 Kamimeguro, Meguroku, Tokyo, Japan 535 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NTD8N2/D
N Channel Enhancement Mode Silicon Gate
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ELECTRICAL CONNECTION
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Value Parameter Symbol Conditions
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125 C/W. Value Parameter Symbol Conditions
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NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant V DSS R
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89
NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD
MCH6664. P-Channel Power MOSFET 30V, 1.5A, 325mΩ, Dual MCPH6. Features
Ordering number : ENA81A MCH6664 P-Channel Power MOSFET V, 1.A, mω, Dual MCPH6 http://onsemi.com Features ON-resistance Pch : RDS(on)1=mW (typ.) 4V drive Halogen free compliance Specifications Absolute
NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
NTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package
NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry
CPH6354. Power MOSFET 60V, 100mΩ, 4A, Single P-Channel. Features. Specifications
CPH64 Power MOSFET 6V, 1mΩ, 4A, Single P-Channel Features ON-resistance RDS(on)1=mW(typ.) 4V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings
NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
MTP10N10ELG. Power MOSFET 10 A, 100 V, Logic Level, N Channel TO A, 100 V R DS(on) = 0.22
MTPNEL Preferred Device Power MOSFET A, V, Logic Level, NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers
NTLUF4189NZ Power MOSFET and Schottky Diode
NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
2N6515, 2N6517, 2N6520. High Voltage Transistors NPN and PNP
2N6515, 2N6517, 2N65 High Voltage Transistors NPN and PNP Features Voltage and Current are Negative for PNP Transistors PbFree Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N6515 2N6517
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
NTD20N06L, NTDV20N06L. Power MOSFET 20 Amps, 60 Volts. Logic Level, N Channel DPAK
NTDN6L, NTDVN6L Power MOSFET Amps, 6 Volts Logic Level, NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
N Channel SOT mamps 60 VOLTS RDS(on) = 7.5 MAXIMUM RATINGS. THERMAL CHARACTERISTICS MARKING DIAGRAM & PIN ASSIGNMENT
Preferred Device NChannel SOT23 MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc DrainGate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Drain Current Continuous TC = 25 C (Note 1.) Continuous
MCH6662. Power MOSFET 20V, 160mΩ, 2A, Dual N-Channel. Features. Specifications
MCH666 Power MOSFET V, 16mΩ, A, Dual N-Channel Features ON-Resistance Nch : RDS(on)1=1mW (typ) 1.8V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum
SMP3003. P-Channel Power MOSFET 75V, 100A, 8.0mΩ, TO-263-2L/TO-263. Features. Specifications TO-263
Ordering number : ENA16D SMP P-Channel Power MOSFET V, 1A, 8.mΩ, TO-6-L/TO-6 http://onsemi.com Features ON-resistance RDS(on)1=6.mΩ (typ.) Input capacitance Ciss=14pF (typ.) 4V drive TO-6 Specifications
N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 madc Total Device Dissipation
MMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
NTB5605P, NTBV5605. Power MOSFET -60 V, A. P Channel, D 2 PAK
NTB6P, NTBV6 Power OSFET -6 V, -8. A P Channel, D PAK Features Designed for Low R DS(on) Withstands High Energy in Avalanche and Commutation odes AEC Q Qualified NTBV6 These Devices are Pb Free and are
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 60N03. Power MOSFET. 60 Amps,30Volts N-Channel DPAK. 60 AMPERES 30 VOLTS R DS(on) = 9.0 m (Typ.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 6N3 Power MOSFET 6 Amps,3Volts NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor
MTW3NE ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise noted) OFF CHARACTERISTICS DrainSource Breakdown Voltage (V GS = V, I D = 5 Adc) Tempera
MTW3NE Preferred Device Power MOSFET 3 Amps, Volts NChannel TO47 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
MJE243 - NPN, MJE253 - PNP
Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter
MTY55N20E. N Channel TO AMPERES 200 VOLTS RDS(on) = 28 mω
Preferred Device NChannel TO264 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
MTP36N06V. Power MOSFET 32 Amps, 60 Volts N Channel TO AMPERES 60 VOLTS R DS(on) = 40 mω
MTP36N6V Preferred Device Power MOSFET 3 Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
NTP13N10G. Power MOSFET. 13 A, 100 V, N Channel Enhancement Mode TO 220
NTPN Preferred Device Power MOSFET A, V, NChannel EnhancementMode TO Features SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Avalanche Energy Specified I DSS and R DS(on)
MTW32N20EG. Power MOSFET 32 Amps, 200 Volts. N Channel TO AMPERES, 200 VOLTS R DS(on) = 75 m
MTW3NE Power MOSFET 3 Amps, Volts NChannel TO47 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
N Channel Enhancement Mode Silicon Gate
SEMICONDUCTOR TECHNICAL DATA Order this document by MTP355V/D N Channel Enhancement Mode Silicon Gate TMOS V is a new technology designed to achieve an on resistance area product about one half that of
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
NTMD4N03R2. Power MOSFET. 4 Amps, 30 Volts N Channel SO 8 Dual
NTMDN3R Power MOSFET Amps, 3 Volts NChannel SO Dual Features Designed for use in low voltage, high speed switching applications Ultra Low OnResistance Provides Higher Efficiency and Extends Battery Life
MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features
NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
MJD, MJDC (NPN), MJD, MJDC (PNP) MJDC and MJDC are Preferred Devices Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications.