MMDFS6N303. Power MOSFET 6 Amps, 30 Volts. N Channel SO 8, FETKY. 6 AMPERES 30 VOLTS R DS(on) = 35 m V F = 0.42 Volts
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1 Power MOSFET 6 Amps, 3 Volts NChannel SO8, FETKY The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, BuckBoost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products. Features Power MOSFET with Low V F Lower Component Placement and Inventory Costs along with Board Space Savings Logic Level Gate Drive Can be Driven by Logic ICs Mounting Information for SO8 Package Provided Applications Information Provided R2 Suffix for Tape and Reel (25 units/13 reel) Marking: 6N33 MOSFET MAXIMUM RATINGS ( unless otherwise noted) (Note 1) Rating Symbol Value Unit DraintoSource Voltage V DSS 3 Vdc DraintoGate Voltage (R GS = M ) V DGR 3 Vdc GatetoSource Voltage Continuous V GS 2 Vdc Drain Current (Note 2) T A = 25 C Single Pulse (tp s) Total Power T A = 25 C (Note 2) Single Pulse DraintoSource Avalanche Energy Startin V DD = 3 Vdc, V GS = 5. Vdc, V DS = 2 Vdc, I L = 9. Apk, L = mh, R G = 25 I D 6. I DM 3 Adc Apk P D Watts E AS 325 mj 1. Pulse Test: Pulse Width 25 s, Duty Cycle %. 2. Mounted on 2 square FR4 board (1 sq. 2 oz. Cu.6 thick single sided), sec. max. 8 6 AMPERES 3 VOLTS R DS(on) = 35 m V F =.42 Volts G SO8 CASE 751 STYLE 18 A L Y W 1 NChannel D S PIN ASSIGNMENT Anode 1 8 Anode Source Gate Top View MARKING DIAGRAM Cathode Cathode Drain Drain ORDERING INFORMATION 8 1 = Assembly Location = Wafer Lot = Year = Work Week 6N33 ALYW Device Package Shipping R2 SO8 25/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD811/D. Semiconductor Components Industries, LLC, 26 August, 26 Rev. 3 1 Publication Order Number: /D
2 SCHOTTKY RECTIFIER MAXIMUM RATINGS ( unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage V RRM 3 Volts V R Average Forward Current (Note 3) (Rated V R ) T A = 4 C Peak Repetitive Forward Current (Note 3) (Rated V R, Square Wave, 2 khz) T A = 8 C I O I frm Amps Amps NonRepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 6 Hz) I fsm 3 Amps THERMAL CHARACTERISTICS SCHOTTKY AND MOSFET Thermal Resistance JunctiontoAmbient (Note 4) MOSFET R JA 167 C/W Thermal Resistance JunctiontoAmbient (Note 5) MOSFET R JA 97 Thermal Resistance JunctiontoAmbient (Note 2) MOSFET R JA 62.5 Thermal Resistance JunctiontoAmbient (Note 4) Schottky R JA 197 Thermal Resistance JunctiontoAmbient (Note 5) Schottky R JA 97 Thermal Resistance JunctiontoAmbient (Note 3) Schottky R JA 62.5 Operating and Storage Temperature Range T j, T stg 55 to 15 MOSFET ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) (Note 6) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Voltage (V GS = Vdc, I D =.25 ma) Temperature Coefficient (Positive) Zero Gate Drain Current (V DS = 24 Vdc, V GS = Vdc) (V DS = 24 Vdc, V GS = Vdc, T J = 125 C) V (BR)DSS 3 I DSS Gate Body Leakage Current (V GS = ± 2 Vdc, V DS = ) I GSS nadc ON CHARACTERISTICS (Note 6) Gate Threshold Voltage (V DS = V GS, I D =.25 ma) Temperature Coefficient (Negative) Static DrainSource Resistance (V GS = Vdc, I D = 5. Adc) (V GS = 4.5 Vdc, I D = 3.9 Adc) V GS(th) R DS(on) Forward Transconductance (V DS = 15 Vdc, I D = 5. Adc) g FS 9. mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss 43 6 pf Output Capacitance (V DS = 24 Vdc, V GS = Vdc, f = MHz) C oss Reverse Transfer Capacitance C rss Mounted on 2 square FR4 board (1 sq. 2 oz. Cu.6 thick single sided), sec. max. 4. Mounted with minimum recommended pad size, PC Board FR4. 5. Mounted on 2 square FR4 board (1 sq. 2 oz. Cu.6 thick single sided), Steady State. 6. Pulse Test: Pulse Width 3 μs, Duty Cycle % Vdc mv/ C Adc Vdc m 2
3 MOSFET ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) (Note 7) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 8) TurnOn Delay Time t d(on) ns Rise Time (V DD = 15 Vdc, I D = Adc, t r TurnOff Delay Time V GS = Vdc, R G = 6. Ω) t d(off) Fall Time t f Gate Charge DRAIN SOURCE DIODE CHARACTERISTICS Forward OnVoltage (Note 7) Reverse Recovery Time (V DS = 15 Vdc, I D = 5. Adc, V GS = Vdc) (I S = 1.7 Adc, V GS = Vdc) (V GS = V, I S = 5. A, dis/dt = A/ s) Q T nc Q 1 Q Q V SD Vdc t rr 54.5 ns t a 14.8 t b 39.7 Reverse Recovery Stored Charge Q RR.48 C SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Maximum Instantaneous Forward Voltage (Note 7) I F = madc I F = 3. Adc I F = 6. Adc Maximum Instantaneous Reverse Current (Note 7) V R = 3 V V F T J = 125 C Volts I R T J = 125 C A ma Maximum Voltage Rate of Change V R = 3 V dv/dt, V/ s 7. Pulse Test: Pulse Width 3 s, Duty Cycle %. 8. Switching characteristics are independent of operating junction temperature. 3
4 I TYPICAL FET ELECTRICAL CHARACTERISTICS I D, DRAIN CURRENT (AMPS) V 4.5 V 3.9 V 3.5 V 3.3 V V GS = 2.9 V D, DRAIN CURRENT (AMPS) V DS V 25 C 125 C T J = 55 C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) V GS, GATETOSOURCE VOLTAGE (VOLTS) 5.5 Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics, DRAINTOSOURCE RESISTANCE (OHMS) DS(on) R I D = 6. A R DS(on), DRAINTOSOURCE RESISTANCE (OHMS) V GS = 4.5 V V GS, GATETOSOURCE VOLTAGE (VOLTS) I D, DRAIN CURRENT (AMPS) V R DS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) Figure 3. OnResistance versus GateToSource Voltage V GS = V I D = 6. A T J, JUNCTION TEMPERATURE ( C) I DSS, LEAKAGE (na) Figure 4. OnResistance versus Drain Current and Gate Voltage V GS = V T J = 125 C C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure 5. OnResistance Variation with Temperature Figure 6. DrainToSource Leakage Current versus Voltage 4
5 TYPICAL FET ELECTRICAL CHARACTERISTICS C, CAPACITANCE (pf) C iss C rss V DS = V GS = C oss C rss Q3 V DS V GS V DS GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation C iss, GATETOSOURCE VOLTAGE (VOLTS) GS V Q1 Q2 Q T Q G, TOTAL GATE CHARGE (nc) V GS I D = 5. A 16 Figure 8. GateToSource and DrainToSource Voltage versus Total Charge t, TIME (ns) t d(off) t f t r t d(on) I S, SOURCE CURRENT (AMPS) 3. V GS = V R G, GATE RESISTANCE (OHMS) V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure. Diode Forward Voltage versus Current I D, DRAIN CURRENT (AMPS) Mounted on 2 sq. FR4 board (1 sq. 2 oz. Cu.6 thick single sided) with one die operating, s max. ms V GS = 12 V SINGLE PULSE T C = 25 C dc R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT ms E AS, SINGLE PULSE DRAINTOSOURCE AVALANCHE ENERGY (mj) I D = 6. A V DS, DRAINTOSOURCE VOLTAGE (VOLTS) T J, STARTING JUNCTION TEMPERATURE ( C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 5
6 TYPICAL FET ELECTRICAL CHARACTERISTICS D =.5 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE CHIP JUNCTION F F F F F SINGLE PULSE AMBIENT t, TIME (s) Figure 13. FET Thermal Response I S di/dt t rr t a t b TIME t p.25 I S I S Figure 14. Diode Reverse Recovery Waveform TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS I F, INSTANTANEOUS FORWARD CURRENT (AMPS) 85 C 25 C T J = 125 C I F, INSTANTANEOUS FORWARD CURRENT (AMPS) 85 C 4 C T J = 125 C 25 C V F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V F, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage 6
7 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS I R, REVERSE CURRENT (AMPS) T J = 125 C 85 C 25 C I R, MAXIMUM REVERSE CURRENT (AMPS).1 T J = 125 C C V R, REVERSE VOLTAGE (VOLTS) V R, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current Figure 18. Maximum Reverse Current C, CAPACITANCE (pf) I O, AVERAGE FORWARD CURRENT (AMPS) V R, REVERSE VOLTAGE (VOLTS) T A, AMBIENT TEMPERATURE ( C) dc SQUARE WAVE I pk /I o = I pk /I o = 5. I pk /I o = I pk /I o = 2 FREQ = 2 khz Figure 19. Typical Capacitance Figure 2. Current Derating P FO, AVERAGE POWER DISSIPATION (WATTS) I pk /I o = 2 I pk /I o = I pk /I o = 5. I pk /I o = 3. SQUARE WAVE dc 5. I O, AVERAGE FORWARD CURRENT (AMPS) Figure 21. Forward Power Dissipation 7
8 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS D =.5 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE CHIP JUNCTION NORMALIZED TO R JA AT STEADY STATE (1 PAD) F F F F F SINGLE PULSE AMBIENT.1 E5 E4 E3 E2 E1 E E1 E2 E3 t, TIME (s) Figure 22. Schottky Thermal Response TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS L O V in C O V out LOAD Buck Regulator L O V in C O V out LOAD Synchronous Buck Regulator 8
9 TYPICAL APPLICATIONS STEP UP SWITCHING REGULATORS L1 V in C O V out LOAD Q1 Boost Regulator V in C O V out LOAD BuckBoost Regulator MULTIPLE BATTERY CHARGERS Buck Regulator/Charger V in Q1 D1 L O C O Q2 D2 BATT #1 Q3 D3 BATT #2 9
10 TYPICAL APPLICATIONS Lilon BATTERY PACK APPLICATIONS Battery Pack PACK LiIon BATTERY CELLS SMART IC DISCHARGE CHARGE Q1 Q2 PACK SCHOTTKY SCHOTTKY Applicable in battery packs which require a high current level. During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. Under normal operation, both transistors are on.
11 PACKAGE DIMENSIONS SO8 CASE 7517 ISSUE AB X B Y 8 1 A 5 4 S.25 (.) M Y M K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.15 (.6) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.127 (.5) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION THRU 7516 ARE OBSOLETE. NEW STANDARD IS Z H G D C.25 (.) M Z Y S X S SEATING PLANE. (.4) N X 45 M J MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G 1.27 BSC.5 BSC H J K M 8 8 N S SOLDERING FOOTPRINT* STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE SCALE 6:1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY is a trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. /D
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NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
NTD Power MOSFET. 12 A, 60 V, N Channel DPAK
NTD55-9 Power MOSFET A, 6 V, NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower R DS(on)
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
MTP2955V. Power MOSFET 12 Amps, 60 Volts. P Channel TO AMPERES, 60 VOLTS R DS(on) = 230 m
ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Cpk 2.) (Note ) (V GS =, I D =.2 madc) Temperature Coefficient
BS107, BS107A. Small Signal MOSFET 250 mamps, 200 Volts N Channel TO ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.
Preferred Device Small Signal MOSFET 250 mamps, 200 Volts NChannel Features PbFree Package is Available* 250 ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.4 (BS107A) MAXIMUM RATINGS Rating Symbol Value
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
NTD80N02T4G. Power MOSFET 80 Amps, 24 Volts. N Channel DPAK
NTD8N2 Power MOSFET 8 Amps, 2 Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Package
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features
NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL
NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
NTB5605P, NTBV5605. Power MOSFET -60 V, A. P Channel, D 2 PAK
NTB6P, NTBV6 Power OSFET -6 V, -8. A P Channel, D PAK Features Designed for Low R DS(on) Withstands High Energy in Avalanche and Commutation odes AEC Q Qualified NTBV6 These Devices are Pb Free and are
TMOS E FET. Power Field Effect Transistor MTP8N50E. N Channel Enhancement Mode Silicon Gate
TMOS E FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate MTP8N5E This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
NTD20N06L, NTDV20N06L. Power MOSFET 20 Amps, 60 Volts. Logic Level, N Channel DPAK
NTDN6L, NTDVN6L Power MOSFET Amps, 6 Volts Logic Level, NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
NTD20N06. Power MOSFET 20 Amps, 60 Volts, N Channel DPAK
NTDN6 Power MOSFET Amps, 6 Volts, NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower R
MTW3NE ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise noted) OFF CHARACTERISTICS DrainSource Breakdown Voltage (V GS = V, I D = 5 Adc) Tempera
MTW3NE Preferred Device Power MOSFET 3 Amps, Volts NChannel TO47 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
MBR120LSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
MBR2045CT, MBRF2045CT. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS
SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175 C Operating Junction Temperature 2 A Total ( A Per Diode Leg) PbFree Package
NTMD4N03R2. Power MOSFET. 4 Amps, 30 Volts N Channel SO 8 Dual
NTMDN3R Power MOSFET Amps, 3 Volts NChannel SO Dual Features Designed for use in low voltage, high speed switching applications Ultra Low OnResistance Provides Higher Efficiency and Extends Battery Life
MTP10N10ELG. Power MOSFET 10 A, 100 V, Logic Level, N Channel TO A, 100 V R DS(on) = 0.22
MTPNEL Preferred Device Power MOSFET A, V, Logic Level, NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers
NTY100N10G. Power MOSFET 123 A, 100 V N Channel Enhancement Mode TO264 Package. 123 A, 100 V 9 V GS = 10 V (Typ)
NTYN1 Preferred Device Power MOSFET 123 A, V NChannel EnhancementMode TO264 Package Features SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Avalanche Energy Specified IDSS
MTP23P06V. P Channel TO AMPERES, 60 VOLTS R DS(on) = 120 m
MTPP6V Preferred Device Power MOSFET Amps, 6 Volts PChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
NTD20N06L, NTDV20N06L. Power MOSFET. 20 A, 60 V, Logic Level, N Channel DPAK/IPAK
NTDN6L, NTDVN6L Power MOSFET A, 6 V, Logic Level, NChannel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
NIS6111. BERS IC (Better Efficiency Rectifier System) Ultra Efficient, High Speed Diode
BERS IC (Better Efficiency Rectifier System) Ultra Efficient, High Speed Diode The NIS6111 ORing diode is a high speed, high efficiency, hybrid rectifier, designed for low voltage, high current systems,
MTW32N20EG. Power MOSFET 32 Amps, 200 Volts. N Channel TO AMPERES, 200 VOLTS R DS(on) = 75 m
MTW3NE Power MOSFET 3 Amps, Volts NChannel TO47 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high
ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Volta
Power MOSFET 3 V, A, Dual NChannel SOIC Features Designed for use in low voltage, high speed switching applications Ultra Low OnResistance Provides Higher Efficiency and Extends Battery Life R DS(on) =.,
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
NTP13N10G. Power MOSFET. 13 A, 100 V, N Channel Enhancement Mode TO 220
NTPN Preferred Device Power MOSFET A, V, NChannel EnhancementMode TO Features SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Avalanche Energy Specified I DSS and R DS(on)
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
MBR120VLSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
MTB30P06V, MTBV30P06V. Power MOSFET 30 Amps, 60 Volts. P Channel D 2 PAK. 30 AMPERES, 60 VOLTS R DS(on) = 80 m
MTB3P6V, MTBV3P6V Power MOSFET 3 Amps, 6 Volts PChannel D 2 PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 60N03. Power MOSFET. 60 Amps,30Volts N-Channel DPAK. 60 AMPERES 30 VOLTS R DS(on) = 9.0 m (Typ.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 6N3 Power MOSFET 6 Amps,3Volts NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
MBRM120E. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS
Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward
MBRM120ET1G NRVBM120ET1G MBRM120ET3G NRVBM120ET3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12ET1G, NRVBM12ET1G, MBRM12ET3G, NRVBM12ET3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
Extended V GSS range ( 25V) for battery applications
Dual Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
NTHS2101P. Power MOSFET. 8.0 V, 7.5 A P Channel ChipFET
NTHSP Power MOSFET. V,. A P Channel ChipFET Features Offers an Ultra Low R S(on) Solution in the ChipFET Package Miniature ChipFET Package % Smaller Footprint than TSOP making it an Ideal evice for Applications
MBR60H100CTG. SWITCHMODE Power Rectifier 100 V, 60 A SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS
SWITCHMODE Power Rectifier 1 V, 6 A Features and Benefits Low Forward Voltage:.72 V @ 125 C Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature 6 A Total (3 A Per Diode
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
MTP20N06V. Power MOSFET 20 Amps, 60 Volts N Channel TO AMPERES 60 VOLTS R DS(on) = 80 mω
MTPN6V Preferred Device Power MOSFET Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V
NGD8NCLB Ignition IGBT 8 Amps, Volts N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in
MTP36N06V. Power MOSFET 32 Amps, 60 Volts N Channel TO AMPERES 60 VOLTS R DS(on) = 40 mω
MTP36N6V Preferred Device Power MOSFET 3 Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
NUD3124, SZNUD3124. Automotive Inductive Load Driver
Automotive Inductive Load Driver This microintegrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a freewheeling
NTJS3151P. Trench Power MOSFET. 12 V, 3.3 A, Single P Channel, ESD Protected SC 88
NTJS5P Trench Power MOSFET V,. A, Single P Channel, ES Protected SC 88 Features Leading Trench Technology for Low R S(ON) Extending Battery Life SC 88 Small Outline (x mm, SC7 Equivalent) Gate iodes for