MMDFS2P102. Power MOSFET 2 Amps, 20 Volts. P Channel SO 8, FETKY. 2 AMPERES 20 VOLTS R DS(on) = 160 m V F = 0.39 Volts
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1 MMDFS2P12 Power MOSFET 2 Amps, 2 Volts PChannel SO8, FETKY The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, BuckBoost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products. Power MOSFET with Low V F, Low I R Schottky Rectifier Lower Component Placement and Inventory Costs along with Board Space Savings Logic Level Gate Drive Can be Driven by Logic ICs Mounting Information for SO8 Package Provided I DSS Specified at Elevated Temperature Applications Information Provided MOSFET MAXIMUM RATINGS (T J = 25 C unless otherwise noted) (Note 1.) Rating Symbol Value Unit DraintoSource Voltage V DSS 2 Vdc DraintoGate Voltage (R GS = 1. M ) V DGR 2 Vdc GatetoSource Voltage Continuous V GS 2 Vdc Drain Current (Note 3.) T A = 25 C T A = 1 C Single Pulse (tp 1 s) Total Power T A = 25 C (Note 2.) Single Pulse DraintoSource Avalanche Energy STARTING T J = 25 C V DD = 3 Vdc, V GS = 5. Vdc, V DS = 2 Vdc, I L = 9. Apk, L = 1 mh, R G = 25 I D I D I DM Adc Apk P D 2. Watts E AS 324 mj 1. Negative sign for Pchannel device omitted for clarity. 2. Pulse Test: Pulse Width 25 μs, Duty Cycle 2.%. 3. Mounted on 2 square FR4 board (1 sq. 2 oz. Cu.6 thick single sided), 1 sec. max AMPERES 2 VOLTS R DS(on) = 16 m V F =.39 Volts G L Y WW PChannel D S SO8 CASE 751 STYLE 18 = Location Code = Year = Work Week PIN ASSIGNMENT Anode 1 8 Anode Source Gate Top View MARKING DIAGRAM 2P12 LYWW Cathode Cathode Drain Drain ORDERING INFORMATION Device Package Shipping MMDFS2P12R2 SO8 25 Tape & Reel Semiconductor Components Industries, LLC, 26 August, 26 Rev. 2 1 Publication Order Number: MMDFS2P12/D
2 MMDFS2P12 SCHOTTKY RECTIFIER MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage V RRM 2 Volts V R Average Forward Current (Note 1) (Rated V R ) T A = 1 C I O 1. Amps Peak Repetitive Forward Current (Note 3.) (Rated V R, Square Wave, 2 khz) T A = 15 C I frm 2. Amps NonRepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 6 Hz) I fsm 2 Amps THERMAL CHARACTERISTICS SCHOTTKY AND MOSFET Thermal Resistance JunctiontoAmbient (Note 2) MOSFET R JA 167 C/W Thermal Resistance JunctiontoAmbient (Note 3) MOSFET R JA 1 Thermal Resistance JunctiontoAmbient (Note 3.) MOSFET R JA 62.5 Thermal Resistance JunctiontoAmbient (Note 2) Schottky R JA 24 Thermal Resistance JunctiontoAmbient (Note 3) Schottky R JA 122 Thermal Resistance JunctiontoAmbient (Note 1) Schottky R JA 83 Operating and Storage Temperature Range T j, T stg 55 to Mounted on 2 square FR4 board (1 sq. 2 oz. Cu.6 thick single sided), 1 sec. max. 2. Mounted with minimum recommended pad size, PC Board FR4. 3. Mounted on 2 square FR4 board (1 sq. 2 oz. Cu.6 thick single sided), Steady State. 2
3 MMDFS2P12 MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted) (Note 4) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Voltage (V GS = Vdc, I D =.25 ma) Temperature Coefficient (Positive) Zero Gate Drain Current (V DS = 3 Vdc, V GS = Vdc) (V DS = 2 Vdc, V GS = Vdc, T J = 125 C) V (BR)DSS 2 Gate Body Leakage Current (V GS = ± 2 Vdc, V DS = ) I GSS 1 nadc ON CHARACTERISTICS (Note 5) Gate Threshold Voltage (V DS = V GS, I D =.25 ma) Temperature Coefficient (Negative) Static DrainSource Resistance (V GS = 1 Vdc, I D = 2. Adc) (V GS = 4.5 Vdc, I D = 2.5 Adc) I DSS V GS(th) 1. R DS(on) Forward Transconductance (V DS = 3. Vdc, I D = 1. Adc) g FS mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss pf Output Capacitance (V DS = 16 Vdc, V GS = Vdc, f = 1. MHz) C oss Reverse Transfer Capacitance C rss SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time Rise Time (V DS = 1 Vdc, I D = 2. Adc, t r TurnOff Delay Time V GS = 4.5 Vdc, R G = 6. Ω) t d(off) 25 5 Vdc mv/ C μadc Vdc mv/ C Ohms t d(on) ns Fall Time t f Gate Charge (V DS = 16 Vdc, I D = 2. Adc, V GS = 1 Vdc) Q T 15 2 nc Q Q 2 5. Q 3 4. DRAIN SOURCE DIODE CHARACTERISTICS Forward OnVoltage (Note 5) Reverse Recovery Time Reverse Recovery Stored Charge (I S = 2. Adc, V GS = Vdc) (I S = 2. Adc, V DD = 15 V, dis/dt = 1 A/μs) V V SD t rr 38 ns t a 17 t b 21 Q RR.34 μc SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted) Maximum Instantaneous Forward Voltage (Note 5) I F = 1. A I F = 2. A Maximum Instantaneous Reverse Current (Note 5) V R = 2 V V F T J = 25 C T J = 125 C Volts I R T J = 25 C T J = 125 C ma.5 1 Maximum Voltage Rate of Change V R = 2 V dv/dt 1, V/ s 4. Negative sign for Pchannel device omitted for clarity. 5. Pulse Test: Pulse Width 3 μsec, Duty Cycle 2.%. 6. Switching characteristics are independent of operating temperature. 3
4 I MMDFS2P12 TYPICAL FET ELECTRICAL CHARACTERISTICS 4. 1 V 4.5 V 3.8 V T J = 25 C 4. V DS 1 V I D, DRAIN CURRENT (AMPS) V V GS = 2.4 V, DRAIN CURRENT (AMPS) D C 1 C T J = 55 C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics, DRAINTOSOURCE RESISTANCE (OHMS) DS(on) R T J = 25 C I D = 1. A R DS(on), DRAINTOSOURCE RESISTANCE (OHMS) T J = 25 C V GS = 4.5 V V GS, GATETOSOURCE VOLTAGE (VOLTS) I D, DRAIN CURRENT (AMPS) 1 V Figure 3. OnResistance versus GateToSource Voltage Figure 4. OnResistance versus Drain Current and Gate Voltage R DS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) V GS = 1 V I D = 2. A T J, JUNCTION TEMPERATURE ( C) I DSS, LEAKAGE (na) V GS = V T J = 125 C 1 C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure 5. OnResistance Variation with Temperature Figure 6. DrainToSource Leakage Current versus Voltage 4
5 MMDFS2P12 TYPICAL FET ELECTRICAL CHARACTERISTICS C, CAPACITANCE (pf) t, TIME (ns) C iss C rss V DS = V GS = C 2. T rss J = 25 C Q3 V DS V GS GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation t d(off) t f t r V DS T J = 25 C C iss C oss, GATETOSOURCE VOLTAGE (VOLTS) GS V I S, SOURCE CURRENT (AMPS) Q1 Q G, TOTAL GATE CHARGE (nc) 16 Figure 8. GateToSource and DrainToSource Voltage versus Total Charge V GS = V T J = 25 C Q2 Q T V GS I D = 2. A t d(on) R G, GATE RESISTANCE (OHMS) V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 1. Diode Forward Voltage versus Current I D, DRAIN CURRENT (AMPS) V GS = 2 V SINGLE PULSE T C = 25 C Mounted on 2 sq. FR4 board (1 sq. 2 oz. Cu.6 thick single sided) with one die operating, 1 s max ms 1. ms 1 s dc 1 s R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 1 E AS, SINGLE PULSE DRAINTOSOURCE AVALANCHE ENERGY (mj) I D = 6. A V DS, DRAINTOSOURCE VOLTAGE (VOLTS) T J, STARTING JUNCTION TEMPERATURE ( C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 5
6 MMDFS2P12 TYPICAL FET ELECTRICAL CHARACTERISTICS Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE D = SINGLE PULSE CHIP JUNCTION NORMALIZED TO R JA AT STEADY STATE (1 PAD) F F F F F AMBIENT.1 1.E5 1.E4 1.E3 1.E2 1.E1 1.E 1.E1 t, TIME (s) 1.E2 1.E3 Figure 13. FET Thermal Response di/dt I S t rr t a t b TIME t p.25 I S I S Figure 14. Diode Reverse Recovery Waveform TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS I F, INSTANTANEOUS FORWARD CURRENT (AMPS) T J = 125 C 85 C 25 C 4 C 1 T J = 125 C 85 C C I F, INSTANTANEOUS FORWARD CURRENT (AMPS) V F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V F, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage 6
7 MMDFS2P12 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS I R, REVERSE CURRENT (AMPS) 1E2 1E3 1E4 1E5 1E6 1E7 T J = 125 C 85 C 25 C V R, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current I R, MAXIMUM REVERSE CURRENT (AMPS) 1E1 1E2 1E3 1E4 1E5 1E6 T J = 125 C 25 C V R, REVERSE VOLTAGE (VOLTS) Figure 18. Maximum Reverse Current C, CAPACITANCE (pf) TYPICAL CAPACITANCE AT V = 17 pf I O, AVERAGE FORWARD CURRENT (AMPS) V R, REVERSE VOLTAGE (VOLTS) T A, AMBIENT TEMPERATURE ( C) dc SQUARE WAVE I pk /I o = I pk /I o = 5. I pk /I o = 1 I pk /I o = 2 FREQ = 2 khz Figure 19. Typical Capacitance Figure 2. Current Derating P FO, AVERAGE POWER DISSIPATION (WATTS) I pk /I o = 2 I pk /I o = 1 I pk /I o = 5. I pk /I o = SQUARE WAVE I O, AVERAGE FORWARD CURRENT (AMPS) Figure 21. Forward Power Dissipation dc 2. 7
8 MMDFS2P12 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1. D =.5 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE SINGLE PULSE CHIP JUNCTION NORMALIZED TO R JA AT STEADY STATE (1 PAD) F F F F F AMBIENT.1 1.E5 1.E4 1.E3 1.E2 1.E1 1.E 1.E1 1.E2 1.E3 t, TIME (s) Figure 22. Schottky Thermal Response TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS L O V in C O V out LOAD Buck Regulator L O V in C O V out LOAD Synchronous Buck Regulator 8
9 MMDFS2P12 TYPICAL APPLICATIONS STEP UP SWITCHING REGULATORS L1 V in C O V out LOAD Q1 Boost Regulator V in C O V out LOAD BuckBoost Regulator MULTIPLE BATTERY CHARGERS Buck Regulator/Charger V in Q1 D1 L O C O Q2 D2 BATT #1 Q3 D3 BATT #2 9
10 MMDFS2P12 TYPICAL APPLICATIONS Lilon BATTERY PACK APPLICATIONS Battery Pack PACK LiIon BATTERY CELLS SMART IC DISCHARGE CHARGE Q1 Q2 PACK SCHOTTKY SCHOTTKY Applicable in battery packs which require a high current level. During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. Under normal operation, both transistors are on. SO8 FOOTPRINT inches mm 1
11 MMDFS2P12 PACKAGE DIMENSIONS SO8 CASE 7517 ISSUE V X B Y Z H 8 1 G A D 5 4 S C.25 (.1) M Z Y S X S.25 (.1) M SEATING PLANE Y.1 (.4) M N X 45 M K J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.15 (.6) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.127 (.5) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G 1.27 BSC.5 BSC H J K M 8 8 N S XXXXXX ALYW STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE FETKY is a trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MMDFS2P12/D
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NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89
NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD
NTD Power MOSFET. 12 A, 60 V, N Channel DPAK
NTD55-9 Power MOSFET A, 6 V, NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower R DS(on)
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features
NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
TMOS E FET. Power Field Effect Transistor MTP8N50E. N Channel Enhancement Mode Silicon Gate
TMOS E FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate MTP8N5E This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without
NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL
NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
NTB5605P, NTBV5605. Power MOSFET -60 V, A. P Channel, D 2 PAK
NTB6P, NTBV6 Power OSFET -6 V, -8. A P Channel, D PAK Features Designed for Low R DS(on) Withstands High Energy in Avalanche and Commutation odes AEC Q Qualified NTBV6 These Devices are Pb Free and are
NTD80N02T4G. Power MOSFET 80 Amps, 24 Volts. N Channel DPAK
NTD8N2 Power MOSFET 8 Amps, 2 Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Package
MTW3NE ELECTRICAL CHARACTERISTICS (T J = 5 C unless otherwise noted) OFF CHARACTERISTICS DrainSource Breakdown Voltage (V GS = V, I D = 5 Adc) Tempera
MTW3NE Preferred Device Power MOSFET 3 Amps, Volts NChannel TO47 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design
MTP23P06V. P Channel TO AMPERES, 60 VOLTS R DS(on) = 120 m
MTPP6V Preferred Device Power MOSFET Amps, 6 Volts PChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
MTP36N06V. Power MOSFET 32 Amps, 60 Volts N Channel TO AMPERES 60 VOLTS R DS(on) = 40 mω
MTP36N6V Preferred Device Power MOSFET 3 Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
MTP20N06V. Power MOSFET 20 Amps, 60 Volts N Channel TO AMPERES 60 VOLTS R DS(on) = 80 mω
MTPN6V Preferred Device Power MOSFET Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
NTD20N06L, NTDV20N06L. Power MOSFET 20 Amps, 60 Volts. Logic Level, N Channel DPAK
NTDN6L, NTDVN6L Power MOSFET Amps, 6 Volts Logic Level, NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
NTD20N06. Power MOSFET 20 Amps, 60 Volts, N Channel DPAK
NTDN6 Power MOSFET Amps, 6 Volts, NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Lower R
MTW32N20EG. Power MOSFET 32 Amps, 200 Volts. N Channel TO AMPERES, 200 VOLTS R DS(on) = 75 m
MTW3NE Power MOSFET 3 Amps, Volts NChannel TO47 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource
MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
Extended V GSS range ( 25V) for battery applications
Dual Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
MTP3055V. Power MOSFET 12 Amps, 60 Volts N Channel TO AMPERES 50 VOLTS R DS(on) = 150 mω
MTP355V Preferred Device Power MOSFET Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
MTP6N60E. Power Field Effect Transistor. N Channel Enhancement Mode Silicon Gate. TMOS POWER FET 6.0 AMPERES, 600 VOLTS R DS(on) = 1.
MTPNE Power Field Effect Transistor NChannel EnhancementMode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance
MTP50N06V. Power MOSFET 42 Amps, 60 Volts N Channel TO AMPERES 60 VOLTS R DS(on) = 28 mω
Preferred Device Power MOSFET Amps, 6 Volts NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications
MTP6P20E. Power MOSFET 6 Amps, 200 Volts P Channel TO AMPERES 200 VOLTS R DS(on) = 1 Ω
MTPPE Preferred Device Power MOSFET Amps, Volts PChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
MBR60H100CTG. SWITCHMODE Power Rectifier 100 V, 60 A SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS
SWITCHMODE Power Rectifier 1 V, 6 A Features and Benefits Low Forward Voltage:.72 V @ 125 C Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature 6 A Total (3 A Per Diode
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MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
MBR2045CT, MBRF2045CT. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS
SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175 C Operating Junction Temperature 2 A Total ( A Per Diode Leg) PbFree Package
MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high
NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
MTB50N06V. 42 AMPERES 60 VOLTS R DS(on) = 28 mω
MTB5N6V Preferred Device Power MOSFET Amps, 6 Volts NChannel D PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V
NGD8NCLB Ignition IGBT 8 Amps, Volts N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in
NTD20N06L, NTDV20N06L. Power MOSFET. 20 A, 60 V, Logic Level, N Channel DPAK/IPAK
NTDN6L, NTDVN6L Power MOSFET A, 6 V, Logic Level, NChannel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
BS107, BS107A. Small Signal MOSFET 250 mamps, 200 Volts N Channel TO ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.
Preferred Device Small Signal MOSFET 250 mamps, 200 Volts NChannel Features PbFree Package is Available* 250 ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.4 (BS107A) MAXIMUM RATINGS Rating Symbol Value
FDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω
FDS935 Dual P-Channel PowerTrench MOSFET - V, -. A, 3 mω Features Max r DS(on) = 3 mω at V GS = - V, I D = -. A Max r DS(on) = 7 mω at V GS = -.5 V, I D = -.9 A High performance trench technology for extremely
NTP13N10G. Power MOSFET. 13 A, 100 V, N Channel Enhancement Mode TO 220
NTPN Preferred Device Power MOSFET A, V, NChannel EnhancementMode TO Features SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Avalanche Energy Specified I DSS and R DS(on)
NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
NTMD4N03R2. Power MOSFET. 4 Amps, 30 Volts N Channel SO 8 Dual
NTMDN3R Power MOSFET Amps, 3 Volts NChannel SO Dual Features Designed for use in low voltage, high speed switching applications Ultra Low OnResistance Provides Higher Efficiency and Extends Battery Life
NIS6111. BERS IC (Better Efficiency Rectifier System) Ultra Efficient, High Speed Diode
BERS IC (Better Efficiency Rectifier System) Ultra Efficient, High Speed Diode The NIS6111 ORing diode is a high speed, high efficiency, hybrid rectifier, designed for low voltage, high current systems,
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
MBRM120E. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS
Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
NTY100N10G. Power MOSFET 123 A, 100 V N Channel Enhancement Mode TO264 Package. 123 A, 100 V 9 V GS = 10 V (Typ)
NTYN1 Preferred Device Power MOSFET 123 A, V NChannel EnhancementMode TO264 Package Features SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Avalanche Energy Specified IDSS
MBRM120ET1G NRVBM120ET1G MBRM120ET3G NRVBM120ET3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12ET1G, NRVBM12ET1G, MBRM12ET3G, NRVBM12ET3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 60N03. Power MOSFET. 60 Amps,30Volts N-Channel DPAK. 60 AMPERES 30 VOLTS R DS(on) = 9.0 m (Typ.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 6N3 Power MOSFET 6 Amps,3Volts NChannel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor
Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V
D D D FDMS7658AS N-Channel PowerTrench SyncFET TM 3 V, 76 A,.9 mω Features Max r DS(on) =.9 mω at V GS = V, I D = 8 A Max r DS(on) =. mω at V GS = 7 V, I D = 6 A Advanced Package and Silicon Combination
MTB30P06V, MTBV30P06V. Power MOSFET 30 Amps, 60 Volts. P Channel D 2 PAK. 30 AMPERES, 60 VOLTS R DS(on) = 80 m
MTB3P6V, MTBV3P6V Power MOSFET 3 Amps, 6 Volts PChannel D 2 PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
MTP10N10ELG. Power MOSFET 10 A, 100 V, Logic Level, N Channel TO A, 100 V R DS(on) = 0.22
MTPNEL Preferred Device Power MOSFET A, V, Logic Level, NChannel TO This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers
MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
BSS BSS N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high