Microscale Power Conversion (MPC)

Transcription

1 Microscale Power Conversion (MPC) Quarterly Review Telecon June 30, 2014 University of Colorado, Boulder and TriQuint Semiconductor Co-PIs: Zoya Popovic, Dragan Maksimovic UC-Boulder: Dr. David Sardin, Dr. Tibault Rebeyrand, Andrew Zai, Scott Schafer, Yuanzhe Zhang, Mike Litchfield TriQuint technical support: Dr. Chuck Campbell, John Hitt; PM: Maureen Kalinski 1

2 Overview 1. Designs for Run #3 further integration of PA and power supply Improved PA designs Integration with best SM design from Run #2 for efficiency Integration with UHF PA and SM from Run 2 for bandwidth DSM3 (multi-phase supply modulator) Discrete-level supply modulator 2. Measurement progress Time-domain measurements Continued bench measurements 3. Integration path 4. Publications etc. 2

3 Run #3 Reticle Layout

4 1. Circuit 5 parts: Integrated MMIC switcher idsm2.3 (from Run 2) C 1 Dashed lines: power stage efficiency Solid lines: total efficiency, including gate drive losses Vdd SW [%] VssH s D=0.25 VssH s V dd D=0.5 V dd D=0.75 Vin = 20 V, fs=100 MHz P out [W] VinHs VinHs VinHs VinL VinL s s V dd V dd SW SW VssLs VssLs SW SW VinLs 20-pin 4x4 mm QFN package 4

5 1. Circuit 5 parts: RF DSM (DSM4), Cascode UHF PA (Run 2) DSM4 exhibits PAE higher than 80% down to DC 200 khz low frequency limit is related to the RF signal generator capability Measured to 600MHz with good gain and efficiency PAE remains high as a function of required output power Measurement demonstrate multi-power level capability 5

6 1. Circuit 5: Integrated SM-PA RF envelope input DC + RF pads Cascode VHF PA Single-phase half bridge converter X-band PA From previous run, modified Off chip filtering CKT 5 6

7 1. Circuit 5: Integrated SM-PA, LVS 7

8 2. Circuit 6: integrated version with different RFPA 8

9 3. Circuit 1: High-efficiency 10-W PA (same as Circuit 3 and Circuit 5, different models ) EG4173A MMIC Layout 3.8mm (X) x 2.3mm (Y) Same size and pad locations as EG0490A VD1 drain resistor designed for 3X more current handling 9

10 3. Circuit 1: EG4173A MMIC LVS Schematic 10

11 3. Circuit 1: EG4173A MMIC Design goals Design Parameter Unit Min Max Simulated Note Frequency GHz Large Signal Gain db Gain Flatness dbpp 2 < 1.7 1,2 Input Return Loss db 10 > 11 1 Peak PAE % 65 > 60 1 Output Power at Peak PAE dbm 40 > 41 1 Drain Power Supply Voltage V Stability with Modulator Unconditional See Note 4 Die Size (X x Y) mm x x Measured at input drive level for peak PAE 2. Single device defined as max gain min gain over specified bandwidth 3. Nominal set to optimize PAE & power goals, capable of 6dB power reduction 4. Predicted stable into 3:1 VSWR without modulator using linear loop gain analysis 11

12 3. Circuit 1 simulated performance % Power Added Efficiency Power (R, dbm) PAE (L) Frequency (GHz) Output Power (dbm) Large Signal Gain & Return Loss(dB) IRL Gain Frequency (GHz) EG4173A Simulated Output Power and PAE (Pin=20dBm) EG4173A Simulated Large Signal Gain and Return Loss 12

13 3. Circuit 1 simulated performance Power (dbm), Gain (db) and %PAE Power (dbm) PAE Gain Input Power (dbm) 800 Drain Current (ma) EG4173A Simulated 10GHz Pout, PAE and gain Stage1 (ma) Stage2 (ma) 20 dbm ma 20 dbm 1124 ma EG4173A Simulated 10GHz Compression Characteristic Input Power (dbm) 13

14 3. Circuit 1 simulated power dissipation FET Power Dissipation (W/mm) Frequency (GHz) Pdiss (W/mm) 95ºC Back Q1 and Q4 Q2 and Q3 Q5 and Q6 12x100um 20um GG Max Tch (C) 10x90um 15um GG Max Tch (C) 8x40um 15um GG Max Tch (C) Simulated Power Dissipation 10x90um FET thermal analysis summary 14

15 4. Circuit 2: RF PA modified from Run 2 Two stage design, Given die size of 2.3x3.8 mm Driver stage: 2 devices, 8x50um Output stage: 4 devices, 10x90um 15

16 4. Circuit 2: Performance with drain bias variation Narrowband simulations 16

17 4. Circuit 2: dependence on drain bias for SM 17

18 4. Circuit 2: Power Dissipation Changes relative to previous design: Re-tuned interstage network to shift frequency center back to 10GHz Rearranged bias pads to match up with EG0490A Vd1 and Vd2 pads close for supply modulator integration 18

19 5. Circuit4: Doherty PA for radar waveforms 19

20 6. Circuit 7: Two-phase DSM (DSM3) Two-phase synchronous Buck DSM with modified pull-up driver, switching at f s Effective switching frequency 2f s Components and sizes are the same as RUN 2 Q 1a R 1a Q HSa D HSa D HSb Q HSb Q 1b R 1b Device Q HSa,b Q LSa,b Q 1a,b, Q 3a,b Q 2a,b, Q 4a,b D HSa,b D LSa,b Size 20x200 μm 20x200 μm 4x25 μm 4x50 μm 20x100 μm 20x100 μm Q 3a Q 3b Component Value Q 2a R 2a Q LSa D LSa D LSb Q LSb R 2b Q 2b R 1a,b R 2a,b 100 Ω 75 Ω C 1a Q 4a Q 4b C 1b C 1a,b 26 pf C 2a C 2b C 2a,b 26 pf 20

21 6. Layout and LVS for DSM3 2.6 mm x 2.7mm 21

22 6. Transient Simulations for 2-phase DSM (DSM3) Phase 1-8/-13 V -8/-13 V -8 V -5/-10 V -5 V 70 nh x 2 25 Ω 2nF -5 V -8 V -5/-10 V Phase 2 22

23 CKT 8: Circuit design Multi-level structure, with integrated gate driver Device Size Component Value Q 1d R 1 Q 2d Q 1 Q 1,2,3,4 Q 1d Q 2d 20x200 μm 4x25 μm 4x50 μm R 1 R Ω 100 Ω Q 1d Q 2 R 1 Q 2d Q 1d Q 3 2.3mm x 2.6mm R 2 Q 2d Q 1d Q 4 R 2 Q 2d 23

24 CKT 8: Transient Simulation 20 V Output example 1: p -8/-13 V 10 V Voltages (V) of four transistors p5 p4 p3 p2 p1-8 V -8/-13 V 5V Graph Time 2s2 (ns) 1 Output example 2: -8/-13 V -8 V -8 V 0V 20 Ω Voltages (V) of four transistors Time (ns) p5 p3 p4 p2 p1-8/-13 V -8 V *Each power supplies can be any level, simulation for functional demonstration only 24

25 CKT 9: Circuit design Basic Buck power stage with large devices To be used with a new RF transformer-based discrete gate driver design Device Size Q HS D HS Q HS, LS 20x300 μm D HS, LS 20x150 μm Q LS D LS 25

26 Ongoing MMIC RF-DSM integration Ongoing integration of DSM4 RFPA assisted switching converter The VHF cascode PA is intended to be combined with a 5 MHz BW switcher stage : Modulated RF output Switcher packaged die Cascode PA die location Layout FR4 PCB for wideband envelope modulator 26

27 TriQuint efforts Working with Dr. Root at Agilent on DynaHEMT model in parallel with internal Angelov modeling efforts; UCB will use newest model for next MMIC design Summary of near-term activities: -Complete models of latest EG0490 die for design spin #3 -Initiate design efforts for fabrication run #3 -Start fabrication run #3 Models currently under verification at UC Boulder 27

28 Timeline ID Task Name Duration Start Finish % Complete 1 UCB MPC-TA2 VeSP MMIC 938 days 11/8/11 6/11/15 63% 2 MPC Kickoff Meeting 3 days 11/9/11 11/11/11 100% 3 Quarterly Reports 671 days 3/16/12 10/10/14 50% 16 Models and Devices from TA1 90 days 8/20/12 12/21/12 100% 20 Model from Modelithics 66 days 12/19/11 3/19/12 100% 23 Design Iteration # 1 (TQGaN15 Process) 269 days 11/8/11 11/16/12 100% 36 Design Iteration # 2 (TQGaN15 Process) 236 days 12/12/12 11/6/13 100% 51 Models and Devices from TA1 38 days 9/5/13 10/28/13 100% 54 Design Iteration # 3 (TQGaN15 process) 205 days 1/10/14 10/23/14 33% 55 Start and Complete Internal model 47 days 1/10/14 3/17/14 100% 56 DynaFET Model complete from Agilent (ADS - 45 days 45 days 2/19/14 4/22/14 80% AWR-20 days later) 57 Design alternate architecture MMIC (DI3) 45 days 3/25/14 5/26/14 0% 58 Receive It. 3 design from UCB/Internal 1 wk 5/27/14 6/2/14 0% 59 Fab and Deliver Custom Wafer Run (start 2 lots of 3 & deliver 2 wafers) 102 days 6/3/14 10/22/14 0% 60 Process design through DLS 2 wks 6/3/14 6/16/14 0% 61 Order and receive Mask 2 days 6/17/14 6/18/14 0% 62 Fabricate wafers 11 wks 6/19/14 9/3/14 0% 63 Test wafer (RF Probe) 3 wks 9/4/14 9/24/14 0% 64 Pick die & ship to UCB 2 wks 9/4/14 9/17/14 0% 65 Test die on carrier 4 wks 9/25/14 10/22/14 0% 66 Test Report 1 day 10/23/14 10/23/14 0% 67 Models and Devices from TA1 1 day 6/16/14 6/16/14 0% 68 Provide switch and RF device PDK - 3rd run 1 day 6/16/14 6/16/14 0% 69 Design Iteration # 4 (TQGaN15 process) 166 days 10/23/14 6/11/15 0% 70 Internal model of DI#3 die 23 days 10/23/14 11/24/14 0% 71 Design alternate architecture MMIC (DI4) 40 days 11/25/14 1/19/15 0% 72 Receive It. 4 design from UCB/Internal 1 wk 1/20/15 1/26/15 0% 73 Fab and Deliver Custom Wafer Run (start 2 lots of 3 97 days 1/27/15 6/10/15 0% 74 Process design through DLS and order plates 5 days 1/27/15 2/2/15 0% 75 Order and receive Mask 2 days 2/3/15 2/4/15 0% 76 Fab wafers 11 wks 2/5/15 4/22/15 0% 77 test wafers 3 wks 4/23/15 5/13/15 0% 78 Pick die and ship to UCB 1 wk 4/23/15 4/29/15 0% 79 Test die on carrier or package 4 wks 5/14/15 6/10/15 0% 80 Final Test Report 1 day 6/11/15 6/11/15 0% Qtr 4 Qtr 1 Qtr 2 Qtr 3 Qtr 4 Qtr 1 Qtr 2 Qtr 3 Qtr 4 Qtr 1 Qtr 2 Qtr 3 Qtr 4 Qtr 1 Qtr 2 Qtr 3 6/16 10/23 6/11 28

29 Schedule for Run 3 Review Planned Update Actual Kickoff (Start) FDR Mask Order Fab. Complete Test Report

30 Test plan (at TriQuint) Production Auto-Probe DC-Probe: 100% Vp for amplifiers, Vp & VBD for test FET RF-Probe: 100% CW power RF-Probe: 9-11GHz, 0.1GHz steps In-Fixture Room temperature CW Power VD varied from 5V to 20V Modulated bias 30

31 Current efforts Finished designs for next MMIC Run (2 weeks later than planned) Ongoing integration continued Ongoing co-design measurement investigation Ongoing non-linear measurement development with SWAP 31

32 Publications, since start of program Co-design of PA, Supply and Signal Processing for Linear Supply-Modulated RF Transmitters, John Hoversten, Scott Schafer, Michael Roberg, Mark Norris, Dragan Maksimovic, Zoya Popovic, IEEE Trans. Microwave Theory and Techniques, Special Issue on PAs, pp , April Efficient and Linear Amplification of Spectrally Confined Pulsed AM Radar Signals, Michael Roberg, Miguel Rodrıguez, Dragan Maksimovic, Zoya Popovic, IEEE Microwave Wireless Comp. Lett., Vol.22, pp , June Resonant pulse-shaping power supply for radar transmitters, Miguel Rodriguez, Michael Roberg, Riley Pack, Zoya Popovic, Dragan Maksimovic, IEEE EPE-PEMC-ECCE 2012, September High-Efficiency Harmonically-Terminated Diode and Transistor Rectifiers, Michael Roberg, Tibault Reveyrand, Ignacio Ramos, Erez Falkenstein, Zoya Popovic,, IEEE Trans. Microwave Theory Tecnh., Vol. 60, No.12, pp , Dec Time-reversal duality of high-efficiency RF power amplifiers, T. Reveyrand, I. Ramos and Z. Popovic, IET Electronics Lett., Vol.48, No.25, Dec. 6, 2012 X-Band High Efficiency Power Amplifier MMICs Manufactured with a 0.15um GaN on SiC Process, C. Campbell, GOMAC Tech. 2013, Las Vegas, March 2013 GaN-based S to X-band Supply-Modulated Linear and Efficient Transmitters Z. Popovic, D. Maksimovic, C. Campbell, M. Litchfield, M. Rodriguez, D.Sardin, S. Schafer, A. Zai, GOMAC Tech. 2013, Las Vegas, March 2013 A MMIC/hybrid high-efficiency X-band power amplifier, Litchfield, M.; Roberg, M.; Popovic, Z., Power Amplifiers for Wireless and Radio Appl. (PAWR), 2013 IEEE Topical Conf., vol., no., pp.10,12, Jan X-Band MMIC GaN Power Amplifiers Designed for High-Efficiency Supply-Modulated Transmitters, Scott Schafer, Michael Litchfield, Andrew Zai, Charles Campbell, Zoya Popovic, IEEE MTT IMS 2013, Seattle, WA, June

33 Publications - continued Resonant pulse-shaping power supply for radar transmitters, Miguel Rodriguez, Michael Roberg, Andrew Zai, Eduard Alarcon, Zoya Popovic and Dragan Maksimovic, IEEE Transactions on Power Electronics, in press, 2013, early access available on IEEE Xplore. Decade Bandwidth High-Efficiency GaN VHF/UHF Power Amplifier, David Sardin, Zoya Popovic, IEEE MTT IMS 2013, Seattle, WA, June 2013 Simulation and Measurement-based X-parameter Models for Power Amplifiers with Envelope Tracking, Haedong Jang, Andrew Zai, Tibault Reveyrand, Patrick Roblin, Zoya Popovic, and David E. Root, IEEE MTT IMS 2013, Seattle, WA, June 2013 RFPA supply modulator using wide-bandwidth linear amplifier with a GaN HEMT output stage, D. Li, M. Rodrıguez, A. Zai, D. Sardin, D. Maksimovic and Z. Popovic, the 14th IEEE Workshop on Contrl and Modeling for Power Electronics, IEEE COMPEL 2013, June 23-26, Salt Lake City, Utah. Characterization of transistor drain supply terminal impedance at signal envelope frequencies, Zoya Popovic, IEEE MTT IMS2013 workshop on low-frequency measurements for RF circuits, Seattle, June 2013 (organizers: Jon Martins, Kate Remley) Co-design of power amplifier and dynamic power supplies for radar and communications transmitters, Zoya Popovic, IEEE MTT IMS2013 RFIC workshop on supply-modulated PAs, Seattle, June 2013 (organizer: Donald Liu) "High Frequency Synchronous Buck Converter using GaN-on-SiCHEMTs," M. Rodriguez, Y. Zhang, D. Maksimovic, presented at IEEE Energy Conversion Congress and Expo (ECCE), September High-frequency PWM Buck converter using GaN-on-SiC HEMTs, M. Rodriguez, Y. Zhang, D. Maksimovic, IEEE Transactions on Power Electronics,

34 Publications - continued Efficient Linear Supply-Modulated PA with Harmonic Injection A. Dani, M. Coffey, Z. Popovic, European Microwave Conf., Nuremberg, Germany, Oct Student best paper competition finalist. Z. Popovic organized workshop at RWW (January, Newport Beach) PA design: from device model to high-performance circuit Supply-modulated transmitters, Z. Popovic et. al., invited talk at the RFIC Workshop on PAs, June, Tampa (90 attendees). Z. Popovic organized workshop at IMS (June, Florida), Efficient amplifiers and transmitters for high peak-to-average ratio signals (Includes several MPC performers), record >100 attendees Supply Modulated Power Amplifiers for Amplitude Modulation Radar Transmitters, A. Zai, C. Campbell, Z. Popovic, GOMAC Tech 2014 High-Efficiency X-Band MMIC GaN Power Amplifiers Operating as Rectifiers, T. Reveyrand, M. Litchfield, Z. Popovic, IEEE IMS 2014, Tampa High Efficiency MHz Wideband Cascode GaN HEMT MMIC Amplifiers, D. Sardin, Z. Popovic, IEEE IMS 2014, Tampa High-Efficiency X-Band MMIC GaN Power Amplifiers with Supply Modulation, A. Zai, S. Schafer, D. Sardin, Y. Zhang, D. Maksimovic, Z. Popovic, IEEE IMS 2014 Z. Popovic organizing workshop at EuMC, Rome, October 2014, together with Steve Cripps, New developments in power amplifier design and integration Z. Popovic invited to give a talk at EuMC workshop on advanced transmitters, October 5, 2014, Rome. 3 papers accepted to EuMC (David, Tibault, Mike) Supply-Modulated Transmitters for Radar with Gaussian Pulses, Andrew Zai, Miguel Rodriguez, Zoya Popovic, submitted to IET special issue on radar 34