ESD Sensitive Component!!

Transcription

1 5 MHz LOW NOISE AMPLIFIER WHM3AE 1 REV E WHM3AE LNA is a low noise figure, wideband, and high linear SMT packaged amplifier with exceptional gain flatness design. The amplifier offers typical.7 db noise figure, 22. db gain, and. dbm output IP 3 at the frequency range from MHz to 5 MHz of short wave, low VHF, FM, high VHF, and paging bands. WHM3AE LNA is most suitable for wireless base stations, wireless data communications, tower top receiver amplifiers, last-mile wireless communication systems, and wireless measurement applications. Key Features: ESD Sensitive Component!! Impedance: 5 Ohm MTBF 2 : >1,5, hrs (171 Years) LGA (land grid array) package: 6-pin Low Noise:.7 db Output IP 3 : dbm Gain: 22. db P 1dB : 16. dbm Single power supply: 4 +3.V Frequency Range: ~ 5 MHz Operating Temperature: -4 ~ +85 ºC Return Losses: db Typical Small size:.25 x.25 x.6 (6.35 mm x 6.35 mm x 1.52 mm) Built-in Functions: DC blocks at input and output, temperature compensation circuits, and auto DC biases. Absolute Maximum Ratings 3 : Symbol Parameters Units Absolute Maximum V dd DC Power Supply Voltage V 5. I dd Drain Current ma 8 P diss Total Power Dissipation mw 35 P In,Max RF Input Power dbm T ch Channel Temperature C 15 T STG Storage Temperature C -65 ~ 15 T O,MAX T Re,MAX Maximum Operating Temperature Maximum Reflow Temperature C -55 ~ C 2 4 R th,c Thermal Resistance C/W 2 1 Specifications are subject to change without notice. 2 MTBF: Mean Time Between Failure, Per TR-NWT-332, ISSUE 3, SEPTEMBER, 199, T=4 o C 3 Operation of this device above any one of these parameters may cause permanent damage. 4 Refer to WanTcom s AN-9 for correct solder reflow temperature profile. 1

2 Specifications: a) Table 1 Summary of the electrical specifications WHM3AE at room temperature Index Testing Item Symbol Test Constraints Nom (RT) Min Max Unit 1 Gain S 21 5 MHz 22 db 2 Gain Variation G 5 MHz +/-.8 +/- 1.2 db 3 Input Return Loss S 11 MHz db 5 MHz 16 db 4 Output Return Loss S 22 5 MHz 18 db 5 Reverse Isolation S 12 5 MHz db 6 Noise figure NF 5 5 MHz.7.85 db Noise figure NF MHz db 7 Output Power 1dB compression Point 8 Output-Third-Order Interception point P 1dB 5 MHz dbm IP 3 Two-Tone, P out + dbm each, 1 MHz separation 28 dbm 9 Current Consumption I dd V dd = +3. V ma Power Supply Voltage V dd V 11 Thermal Resistance R th,c Junction to case Operating Temperature T o Maximum Average RF Input Power o C/W P IN, MAX 5 MHz dbm o C b) Passband Frequency Response As shown in Figure 1 of the measured parts in the production test fixture, the typical gain of the WHM3AE is 22 db across to 5 MHz. The typical input and output return losses are 22 db and db across the frequency of to 5 MHz. The gain variation is less than.7 db (+/-.35 db) from the frequency from to MHz and less than 2. db from to 5 MHz. The amplifier has excellent consistent performance between each part from the same lot. For instance, at 64 pieces sampling size at 25 MHz, the amplifiers have the nominal gain of 21.7 db with the standard deviation of.4 db, the nominal input return loss of 19. db with the standard deviation of.36 db, and the nominal output return loss of db with the standard deviation of 1.28 db. The actual performance may vary slightly for a soldered WHM3AE on a test board comparing to the test results on the test fixture. Figure 2 shows the measured P 1dB and IP 3 of the WHM3AE soldered on the test board. The typical P 1dB and IP 3 are 16. dbm and. dbm in the frequency range of to 5 MHz, respectively. Figure 3 illustrates the measured noise figure performance at full temperature. The noise figure is.65 db to.7 db across the frequency range of 5 to 5 MHz and less than 1. db from MHz to MHz at room temperature. At 85 C, WHM3AE only has.35 db noise increases. At 4 C, WHM3AE offers approximately.25 db less noise figure than that at room temperature. Figure 4 demonstrates the stability factor k of the amplifier. The amplifier is conditional stable since the stability factor k is less than 1 at the frequency from 1. GHz to 1.7 GHz. Figure 5 shows frequency responses of WHM3AE in full temperature from 55 C to +125 C. Figure 6 demonstrates the application schematic diagram of WHM3AE. It requires two (2) external high Q 6.8 uh inductors for the extended low frequency operation. The example of the inductor is FSLM25-6R8J from TDK. Other brand inductors can be used as long as it is high Q and the lowest self-resonance frequency is beyond 5 MHz. A 169-Ohm resistor, R B1, is used to adjust the DC bias current of the amplifier. The higher the R B1, the larger the DC bias current. R B1 value can be from 15 Ohm to Ohm depending on the predetermined DC bias current. For higher IP3 applications, the DC bias current can be set at 6 ma. A R D1 may be needed if the DC power supply is higher than +3.V. For example, R D1 is 5 Ohm if the bias current is 4 ma and the DC source is +5.V. This R D1 has 2. V voltage-drop, which makes the V dd to be +3. V of the nominal operation voltage of the amplifier. The two (2) decoupling capacitors of.1 uf are used. All these external components must be rated in the temperature range of -4 C to 85 C to ensure the entire circuit working in the specified temperature range. Figure 7 shows the mechanical outline and recommended motherboard layout of WHM3AE. Plenty of ground vias on the motherboard are essential for the RF grounding. The width of the 5-Ohm lines at the input and output RF ports may be different for different property of the substrate. 2

3 S 21 S 22 S 11 S 12 FIG. 1-(a) Typical small signal performance, S 21, S 12 FIG. 2-(b) Typical small signal performance, S 11, S WHM3AE IP3 and P1dB IP3 (dbm) P1dB (dbm) WHM3AE Noise Figure 25C -4C 85C C dbm NF (db) FIG. 3 Typical P 1dB and IP 3 at room temperature. FIG. 3 Noise figure performance at full temperature k WHM3AE Stability Factor k Limit 5 4 WHM3AE Frequency Response, S21, S11, In Full Temperature Range S11, 25C S21, 25C S11, 85C S21, 85C S11, 125C S21, 125C S11, -55C S21, -55C k db FIG. 4 Measured stability factor k FIG. 5-(a) S 21 and S 11 in full temperature. 3

4 WHM3AE Frequency Response, S12, S22, In Full Temperature Range 5 S22, 25C 4 S12, 125C S22, 125C S12, -55C S22,-55C db FIG. 5-(b) S 12 and S 22 in full temperature. FIG. 6 Typical application schematic for WHM3AE WHM3AE Mechanical Outline, WHM-1M: FIG. 7 WHM4AE outline 4

5 Ordering Information Model Number WHM3AE Waffle pack with the capacity of pieces ( x ) is used for the packing. Contact factory for tape and reel packing option for higher volume requirements. Small Signal S-Parameters:! WLA3AE! Vdd = +3. V, Id = 4 ma # Ghz s ma r ****** 5