GHz SUPER LOW NOISE PACKAGED AMPLIFIER WHM0510AE 1

Transcription

1 .5-1. GHz SUPER LOW NOISE PACKAGED AMPLIFIER WHM51AE 1 WHM51AE LNA is a super low noise figure, wideband, and high linear amplifier. The amplifier offers.4 db exceptional low noise figure, 38. db gain, 19. dbm P 1dB and 3. dbm output IP 3 at the frequency range from 5 MHz to 1 MHz. WHM51AE is most suitable for cellular base stations, wireless data communications, tower top receiver amplifiers, cellular micro-cells, last-mile wireless communication systems, and wireless measurement applications of UHF, Cellular, and GSM bands. WHM51AE is designed to meet the rugged standards of MIL-STD-22, and MIL-STD-883. Key Features: Preliminary Impedance: 5 Ohm MTBF 2 : >6, hrs (68 Years) Exceptional Low Noise:.4 db Output IP 3 : 3. dbm Gain: 38. Gain Flatness: +/-1.25 db Input VSWR: 1.25:1 Output VSWR: 1.25:1 P 1dB : 19. dbm Single Power Supply: V Frequency Range: 5 ~ 1 MHz Operating Temperature: -4 ~ +85 ºC Small Size:.5 x.35 x.1 surface mount (SMT) format Built-In Functions: DC blocks at input and output, DC-DC converter temperature Compensation circuits, and auto DC biases. Absolute Maximum Ratings 3 : Symbol Parameters Units Absolute Maximum V dd DC Power Supply Voltage V 7. I dd Drain Current ma 15 P diss Total Power Dissipation mw 1 P In,Max RF Input Power dbm 1 T ch Channel Temperature C 15 T STG Storage Temperature C -65 ~ 15 T O,MAX Maximum Operating Temperature C -4 ~ 85 R th,c Thermal Resistance C/W 22 1 Specifications are subject to change without notice. 2 MTBF: Mean Time Between Failure, Per TR-NWT-332, ISSUE 3, SEPTEMBER, 199, T=4 o C 3 Operation of this device above any one of these parameters may cause permanent damage. 1

2 Specifications: a) Table 1 Summary of the electrical specifications of WHM51AE at room temperature Index Testing Item Symbol Test Constraints Nom (RT) Min Max Unit 1 Gain S MHz db 2 Gain Variation G 5-1 MHz +/ /- 1.5 db 3 Input Return Loss S MHz 2 18 db 4 Output Return Loss S MHz 2 18 db 5 Reverse Isolation S MHz 45 4 db 6 Noise figure NF 5-1 MHz.4.55 db 7 Output P 1dB compression P 1dB 5-1 MHz 19. dbm 8 Output-Third-Order Interception point IP 3 Two-Tone, Pout dbm each, 1 MHz separation 3. dbm 9 Current Consumption I dd V dd = +5 V 1 ma 1 Power Supply Voltage V dd V 11 Operating Temperature T o Maximum Average RF Input Power P IN, MAX 5-1 MHz 1 dbm o C b) Passband Frequency Response As shown in Figure 1, the typical gain of the WHM51AE is 38. db across 5 MHz to 1MHz. The typical input and output return losses are 2. db and better than 18. db, respectively. The noise figure, as shown in Figure 2, of WHM51AE is.43 db 4 at room temperature. The noise figure of.43 db includes.3 db loss of the SMA connector. The actual noise figure of the LNA module is in.4 db neighborhoods. The LNA noise figure is less than.6 db at 85 C and way below.3 db at 4 C, which is already difficult to measure by the existing state-of-the-art noise figure measurement system. The output 1-dB compression point and IP 3 are shown in Figure 3. WHM51AE offers typical 19. dbm of P 1dB and minimum 3. dbm of IP 3. Figure 4 demonstrates the stability factor k of the amplifier. k is greater than 1 in all frequency range and thus the amplifier is unconditional stable. Figure 5 demonstrates the frequency response of WHM51AE in the extended frequency range. Figure 6 is the block diagram of internal circuit of WHM51AE. It is a two-stage amplifier with the DC block capacitors at the input and output RF ports. All the RF matching networks, DC-DC converter, DC bias circuitries, and temperature compensation circuits are built in. Figure 7 shows the mechanical outline and recommended motherboard layout of WHM51AE. Plenty ground vias on the motherboard are essential for the RF grounding. The width of the 5-Ohm lines at the input and output RF ports may be different for different characteristics of the substrate. 4 In order to measure such low noise figure, a low ENR noise source such as HP465A is required to reduce the non-linearity of the detector due to the high ENR. Please refers to AN-16 which is available at 2

3 Sij(dB) WHM51AE 25 C S11 S21 S12 S NF (db) WHM51AE Noise Figure NF, 25C NF, -4C NF, +85C FIG. 1 Small signal performance of WHM51AE FIG. 2 Noise figure performance at full temperature IP3 (dbm) WHM51AE IP3 and P1dB vs. Frequency IP3 P1dB Fig. 3 Output 1-dB compression point and IP 3 k WHM51AE Stability Factor k Fig. 4 Stability factor k WHM51AE Frequency Response In Wide 25C 5 S11(dB) S21(dB) 4 S12(dB) S22(dB) 3 2 RF INPUT RF OUTPUT Sij (db) Control Circuitry +5.V IN RF & DC GND FIG. 5 Frequency response in the extended band. FIG. 6 Block diagram of WHM51AE 3

4 WHM51AE Mechanical Outline, WHM-4 FIG. 7 WHM-4 Outline Ordering Information Model Number WHM51AE 4

5 Small Signal S-parameters!WHM51AE!S-parameters at V dd = 5V, I dd =1mA, including test fixture. Last updated 7/7/4. # GHZ s MA R 5!F(GHz) MAG S11 ANG S11 MAG S21 ANG S21 MAG S12 ANG S12 MAG S22 ANG S ****** 5