Switching performance of quasivertical GaN-based p-i-n diodes on Si

Transcription

1 Phy. Sttu Solidi A 214, No. 8, (2017) / DOI /p Switching performnce of quiverticl GN-bed p-i-n diode on Si phyic ttu olidi ppliction nd mteril cience Xu Zhng 1, Xinbo Zou 1,2, Chk Wh Tng 1, nd Kei My Lu *,1,2 1 Deprtment of Electronic nd Computer Engineering, Hong Kong Univerity of Science nd Technology, Cler Wter By, Kowloon, Hong Kong 2 HKUST Jockey Club Intitute for Advnced Study (IAS), Hong Kong Univerity of Science nd Technology, Hong Kong Received 30 October 2016, revied 19 April 2017, ccepted 20 April 2017 Publihed online 17 My 2017 Keyword forwrd recovery, GN ilicon, PIN diode, revere recovery, witching * Correponding uthor: e-mil eekmlu@ut.hk, Phone: þ , Fx: þ The witching performnce of GN-bed p-i-n diode on Si w invetigted for the firt time. A double-pule tet circuit uing n inductive lod w utilized to evlute the diode witching chrcteritic. When the GN diode w witched from n on-tte with I F ¼ 450 ma to n off-tte with V R ¼ 200 V (di F /dt ¼ 16 A/m), the pek revere recovery current (I rr ) nd time (t rr ) w meured to be 19.4 ma nd 7.1 n, repectively. The mount of chrge tored in the drift region nd the turn-off energy w extrcted to be 0.14 nc nd mj, repectively. The crrier lifetime under high-level injection condition in GN w etimted to be 0.6 n. The revere recovery chrcteritic of the GN diode howed little enitivity to elevted temperture up to 150 8C. During the forwrd recovery (from off-tte with V R ¼ 190 V to ontte with I F ¼ 450 ma), the GN diode exhibited negligible voltge overhoot. In comprion to commercil ft recovery-si diode, the uperior revere nd forwrd recovery performnce of GN-bed p-i-n diode indicte their prcticlity in ft witching ppliction nd relibility t high temperture. 1 Introduction III-N emiconductor mteril hve invigorted intenive reerch in vriou optoelectronic nd electronic device for the next genertion olid-tte lighting (SSL), high frequency nd high power ppliction due to their uperior mteril propertie, uch wide energy bndgp, high criticl electricl field nd good therml conductivity [1 3]. Along with the development of conventionl lterl device, uch AlGN/GN high electron mobility trnitor (HEMT) [4, 5], verticlly configured diode nd trnitor [6, 7] hve lo been extenively invetigted in recent yer. The verticl tructure enble high brekdown voltge with mll footprint, good therml performnce nd high integrtion flexibility. A fundmentlly importnt nd widely ued device, GN-bed p-i-n diode hve lo been invetigted becue of their mll conduction lo, low revere lekge current, nd high brekdown voltge [8 12]. With continuou progre in growing GN on (111)Si ubtrte, GN on ilicon electronic i conidered n enbling technology cpitlizing on the outtnding mteril propertie of GN nd volume production offered by Si. Recently, number of two-terminl device including GN Schottky diode, qui-verticl p-i-n diode, nd fully-verticl p-i-n diode hve been uccefully demontrted uing GN-on-Si epilyer [13 15]. The reported device technologie nd diode chrcteritic howed gret potentil of thee device in high voltge ppliction. However, there i no report on the witching performnce of p-i-n diode uing GN-on-Si epilyer, which i importnt informtion epecilly for high-frequency witching ppliction. In thi work, we demontrted for the firt time the witching performnce of qui-verticl p-i-n diode grown nd fbricted on (111)Si ubtrte. Both revere nd forwrd recovery chrcteritic of GN-bed p-i-n diode re reported nd dicued. A detiled comprion between GN diode nd commercil ft recovery-si diode i lo mde. 2 Device informtion nd meurement etup The p-i-n diode tructure were grown by metlorgnic vpor phe expitxy (MOVPE) on 6-inch Si ubtrte. After depoiting 1.2-mm thick AlGN buffer lyer, 800-nm thick Si-doped n-gn lyer (n ¼ cm 3 )

2 Originl Pper Phy. Sttu Solidi A 214, No. 8 (2017) (2 of 5) w grown, followed by 2-mm-thick undoped i-gn drift lyer nd 500-nm thick Mg-doped p-type GN cp lyer (p ¼ cm 3 ). In device fbriction, the n-gn w firt expoed uing inductively coupled plm (ICP) dry etching. To uppre lekge current through the etched idewll, tretment in 75 8C tetrmethylmmonium hydroxide (TMAH) to remove etching dmge i crried out, nd followed by idewll pivtion [16] by SiO 2 uing plm enhnced chemicl vpor depoition (PECVD). Then the metl tck with 30 nm/10 nm NiAu w depoited onto the p-gn nd nneled to form Ohmic contct. Finlly, Cr/Al-bed metl were depoited electrode. The chemtic of completed device i hown in Fig. 1. Figure 2() how the forwrd I V chrcteritic of 0.08 mm 2 qui-verticl p-i-n diode. The V on cn be extrcted 3.0 V t 1 A cm 2. It w clculted tht the differentil R on w 13 mv-cm 2 fter turn on. The revere I V chrcteritic (Fig. 2(b)), how the lekge current denity low Acm 2 t bi of 200 V. A hrp brekdown w oberved t revere bi of 420 V, which i correponding to criticl electricl field of 2.1 MV cm 1. Figure 3 i double-pule tet circuit uing n inductive lod utilized to evlute the diode witching performnce nd energy lo [17]. A 1.7 kv commercil SiC MOSFET w employed to erve witch. When the firt pule ignl w pplied to the trnitor, it i firt turned on nd the inductor (5 mh) i chrged linerly by the DC power upply (V DD ¼ 200V) while the device under tet (DUT) i revere-bied. Once the trnitor i turned off, the inductor current would go through the DUT nd driven into forwrd-bied tte. When the econd pule come, the MOSFET will be witched on inducing the DUT to enter the revere-blocking tte gin. 3 Switching performnce During the on-tte of the GN diode with high current denity, there i lrge mount of free crrier being injected into the drift region. To enter the off-tte, thee crrier mut be totlly removed before depletion region cn be etblihed to upport the revere bi blocking function. A the diode i being witched from the on-tte to off-tte, pek revere Figure 2 () Forwrd nd (b) Revere I V chrcteritic of GN-bed qui-verticl p-i-n diode. Inet of () i n opticl imge of circulr diode with dimeter of 320 mm. recovery current (I rr ) will occur during the removl of the tored chrge in the drift region. Figure 4 compre the revere recovery chrcteritic of the GN-on-Si nd Si diode (Firchild, UF4004) when being witched from forwrd current of 450 ma to revere-blocking mode (V R ¼ 200 V) with fixed differentil of di F /dt ¼ 16 A m 1. Compred to the Si diode, the GN diode exhibited 30 reductioninpek revere recovery current (19.4 ma) nd 9 reduction in revere recovery time (t rr, 7n). Thi i minly ttributed to the much horter crrier lifetime in GN o Figure 1 Schemtic of Qui-verticl GN-bed p-i-n diode. Figure 3 Schemtic of double-pule tet circuit.

3 phyic p ttu olidi (3 of 5) X. Zhng et l.: Switching performnce of qui-verticl GN-bed p-i-n diode on Si Figure 4 Voltge nd current wveform of GN-bed quiverticl diode nd ft Si diode (Firchild, UF4004) during revere recovery. The inet i zoomed-in imge t the point where the GN diode pek revere recovery current occur. tht the chrge in the drift lyer cn be removed within much hort time frme. From the revere recovery chrcteritic, the crrier lifetime of p-i-n diode in high-level injection condition (t HL ) cn be clculted [18] t HL ¼ 2 I rr I F t rr ; ð1þ where the I F i the forwrd current. Correpondingly, the crrier lifetime under high-level injection condition in GN p-i-n diode cn be etimted 0.6 n compred to tht of 170 n for Si diode. A ummrized in Tble 1, the etimted chrge tored in the drift region of the GN diode i 0.14 nc, only round 0.6% of tht in Si diode. The much mller mount of chrge tored in the GN diode re directly relted to the thin drift lyer (2 mm thick) nd mll device re. A reult, the turn-off energy of GN diode for one revere recovery event cn be clculted to be mj, which w only 2.5% of tht in Si diode (2.14 mj). Figure 5() how the revere recovery chrcteritic from different forwrd current to the me revereblocking mode (V R ¼ 200 V). The lrger the forwrd cur-rent, the lrger mount of chrge will be injected into the drift region prolonging the revere recovery Tble 1 Summry of the prmeter during revere recovery. prmeter GN diode Si diode I rr (ma) t rr (n) Q rr (nc) t HL (n) turn-off energy (mj) Prmeter during revere recovery of GN-bed qui-verticl diode nd ft Si diode (F irchild, UF4004), from forwrd current of 450 ma to revere-blocking mode (V R ¼ 200 V). (t rr w defined the time durtion from the point where the forwrd current drop to zero to the point where the revere recovery current decy to 20% of I rr ). Figure 5 Current wveform the two diode during revere recovery () from different forwrd current to revere-blocking tte (V R ¼ 200 V) nd (b) from forwrd current of 450 ma to revere-blocking tte (V R ¼ 200 V) under different current chnge rte. The inet re zoomed-in imge t the point where the GN di-ode pek revere recovery current occur. proce. For the Si diode, both of I rr nd t rr incree ignificntly the for-wrd current rie from 100 to 200 ma, nd then 450 ma. Menwhile, le impct w oberved for the GN di-ode. Figure 5(b) preent the influence of di F /dt on revere recovery. If the di F /dt i mller, the forwrd current will drop lower to zero during which le chrge will be left for the revere recovery proce. With decreing di F /dt, the Si diode only exhibited lightly uppreed revere recovery current nd time which, however, re till much lrger thn tht in the GN diode. Figure 6 diply revere recovery chrcteritic of GN diode nd Si diode t different temperture. A temperture rie from 25 to 150 8C, the pek revere recovery current for the Si diode increed to 1 A nd the revere recovery time w lrge 187 n. While little influence h been oberved for GN p-i-n diode up to 150 8C. A reult, turning-off energy lo w clcuted to be 4.58 mj t 150 8C for Si diode (over two time lrger thn tht t 25 8C) [Fig. 6(b)]. While the turning-off energy lo of GN diode how excellent therml immunity for temperture up to 150 8C due to the wide energy bndgp of GN mteril (3.4 ev). Figure 7 diply the forwrd recovery chrcteritic of GN-bed qui-verticl p-i-n diode compred to the ft

4 Originl Pper Phy. Sttu Solidi A 214, No. 8 (2017) (4 of 5) negligible voltge overhoot w oberved. A reult, much mller energy lo during forwrd recovery could be expected from the GN diode. 4 Concluion The witching performnce w demontrted for GN-bed p-i-n diode on Si. During revere recovery (from on-tte with I F ¼ 450 ma to offtte with V R ¼ 200 V, di F /dt ¼ 16 A m 1 ), the GN diode exhibited uperior performnce to Si diode, including pek revere recovery current of only 19.4 ma, revere recovery time of 7.1 n, tored chrge of 0.14 nc, nd turn-off energy of mj. The revere recovery chrcteritic of the GN diode howed very good temperture immunity for temperture up to 150 8C, which indicted their prcticl ppliction t high temperture hrh environment. During the forwrd recovery (from off-tte with V R ¼ 190 V to on-tte with I F ¼ 450 ma), the GN diode preented negligible voltge overhoot compred to 20 V overhoot voltge pek oberved in the commercil ft recovery-si diode. The revere nd forwrd recovery chrcteritic of p-i-n diode uing GN-on-Si epilyer how gret promie in high frequency witching ppliction. Figure 6 () Revere recovery chrcteritic t different temperture. (b) Turn-off energy lo of the two diode t different temperture. Si diode. When witched from revere blocking mode (V R ¼ 190 V) to forwrd conduction mode with current of 450 ma, the pek of the voltge overhoot reched round 20 V for the Si diode while no obviou voltge overhoot w oberved for the GN diode. A the overhoot voltge i lrgely relted to the highly-reitive unmodulted potion of the drift lyer, n overhoot voltge i expected in the Si diode due to the lrge nd thick ctive re. In contrt, the GN diode benefit from it thin drift lyer (only 2 mm thick) tht only mll number of chrge i needed to finih the OFF-to-ON trnient nd thu, Figure 7 Voltge nd current wveform of the two diode during forwrd recovery. Acknowledgement Thi work w upported by the Reerch Grnt Council (RGC) theme-bed reerch cheme (TRS) of the Hong Kong Specil Adminitrtive Region Government under grnt T23-612/12-R, nd prtilly upported by grnt from the Reerch Grnt Council of the Hong Kong Specil Adminitrtive Region (Project No ). Reference [1] S. J. Perton nd F. Ren, Adv. Mter. 12(21), 1571 (2000). [2] M. S. Shur, Solid-Stte Electron. 42(12), 2131 (1998). [3] N. Iked, Y. Niiym, H. Kmbyhi, Y. Sto, T. Nomur, S. Kto, nd S. Yohid, Proc. IEEE 98(7), 1151 (2010). [4] Y. F. Wu, A. Sxler, M. Moore, R. P. Smith, S. Shepprd, P. M. Chvrkr, T. Wileder, U. K. Mihr, nd P. Prikh, IEEE Electron. Device Lett. 25(3), 117 (2004). [5] W. Sito, Y. Tkd, M. Kurguchi, K. Tud, I. Omur, T. Ogur, nd H. Ohhi, IEEE Trn. Electron. Device 50(12), 2528 (2003). [6] H. Nie, Q. Diduck, B. Alvrez, A. P. Edwrd, B. M. Kye, M. Zhng, G. Ye, T. Prunty, D. Bour, nd I. C. Kizilylli, IEEE Electron. Device Lett. 35(9), 939 (2014). [7] S. Chowdhury, B. L. Swenon, M. H. Wong, nd U. K. Mihr, Semicond. Sci. Technol. 28(7), (2013). [8] Y. Htkeym, K. Nomoto, A. Terno, N. Kned, T. Tuchiy, T. Mihim, nd T. Nkmur, Jpn. J. Appl. Phy. 52(2), (2013). [9] T. G. Zhu, D. J. H. Lmbert, B. S. Shelton, M. M. Wong, U. Chowdhury, H. K. Kwon, nd R. D. Dupui, Electron. Lett. 36(23), 1971 (2000). [10] Y. Yohizumi, S. Hhimoto, T. Tnbe, nd M. Kiym, J. Cryt. Growth 298(SPEC. ISS), 875 (2007).

5 phyic p ttu olidi (5 of 5) X. Zhng et l.: Switching performnce of qui-verticl GN-bed p-i-n diode on Si [11] I. C. Kizilylli, A. P. Edwrd, H. Nie, D. Diney, nd D. Bour, IEEE Trn. Electron. Device 60(10), 3067 (2013). [12] I. C. Kizilylli, T. Prunty, nd O. Akt, IEEE Electron. Device Lett. 36(10), 1073 (2015). [13] X. Zou, X. Zhng, X. Lu, C. W. Tng, nd K. M. Lu, IEEE Electron Device Lett. 37(5), 636 (2016). [14] Y. Zhng, M. Sun, D. Piedr, M. Azize, X. Zhng, T. Fujihim, nd T. Plcio, IEEE Electron. Device Lett. 35(6), 618 (2014). [15] X. Zou, X. Zhng, X. Lu, C. W. Tng, nd K. M. Lu, IEEE Electron. Device Lett. 37(9), 1158 (2016). [16] Y. Zhng, M. Sun, H. Y. Wong, Y. Lin, P. Srivtv, C. Htem, M. Azize, D. Piedr, L. Yu, T. Sumitomo, N. De Almeid Brg, R. V. Mickeviciu, nd T. Plcio, IEEE Trn. Electron. Device 62(7), 2155 (2015). [17] B. Ozpineci nd L. M. Tolbert, IEEE Power Electron. Lett. 1(2), 54 (2003). [18] B. J. Blig, Fundmentl of Power Semiconductor Device (Springer, US, 2010).