SUPPLEMENTARY INFORMATION
|
|
|
- Bathsheba Copeland
- 5 years ago
- Views:
Transcription
1 SUPPLEMENTARY INFORMATION doi:1.138/nture11434 Supplementry Figure 1. (),() Cross-section HRTEM imges of thermlly nneled (3 o C, 6 min) nd photonneled (12 min) IGZO films on Si wfers. (c) RBS spectr of thermlly nneled nd photo-nneled IGZO thin films (Zn component includes G toms). (d) Refrctive index vlues of thermlly nneled nd photo-nneled IGZO films s function of wvelength. Thermlly nneled Epoxy Photo-nneled Epoxy IGZO IGZO Si wfer Si wfer Intensity (Counts) c # 1 : In : Zn : O = 29.4 : 11.2 : tom s cm -2, 6.~ 4.2 g cm -3 (7.1~ 1.27 nm ) # : In : Zn : O = 28. : 12.1 : tom s cm -2, 6.1~ 4. g cm -3 (7.1~ 9.7 nm ) x1 In Zn O # : 11.2 : 9.4 # 28. : 12.1 : 9.4 O M esured D t Sim ultion D t Zn,G In Refrctive Index d IGZO thin films Therml nneling (3 o C, 1hr) Photo-nneling (12min) Energy (kev) Wvelength (nm) 1
2 RESEARCH SUPPLEMENTARY INFORMATION Supplementry Figure 2. () XPS spectr of photo-nneled (3, 6, nd 12 min) IGZO thin films, nd () pek-fit results (full-width t hlf-mximum; FWHM nd % Are) of O1s peks s function of photonneling time. As reference, pek-fit result of IGZO thin film thermlly nneled t 3 o C is provided. 7 6 Photo-nneled (3 min) 7 6 Photo-nneled (6 min) 7 6 Photo-nneled (12 min) Binding Energy (ev) Binding Energy (ev) Binding Energy (ev) min M-O M-O vc M-OH BE (ev) FWHM (ev) % Are min M-O M-O vc M-OH BE (ev) FWHM (ev) % Are min M-O M-O vc M-OH BE (ev) FWHM (ev) % Are min M-O M-O vc M-OH BE (ev) FWHM (ev) % Are min M-O M-O vc M-OH BE (ev) FWHM (ev) % Are Therml M-O M-O vc M-OH BE (ev) FWHM (ev) % Are
3 SUPPLEMENTARY INFORMATION RESEARCH Supplementry Figure 3. (),() Schemtics of DUV photo-nneling nd temperture-profile imges of IGZO/SiO 2 /Si smples fter DUV irrdition of 12 minutes using glss plte/sus grid plte (unintentionl heting condition) nd SUS plte/ulk SUS lock (cooling stge), respectively. (c),(d) Corresponding trnsfer chrcteristics of photo-nneled (12 min) IGZO TFTs using glss plte nd SUS plte, respectively. The chnnel length nd width of the device were 1 μm nd 1 μm, respectively. IGZO/SiO 2 /Si smple IGZO/SiO 2 /Si smple SUS plte Glss plte (1.1 mm) SUS grid plte Bulk SUS lock DUV 3 min DUV 12 min DUV 3 min DUV 12 min T su ~ 134 o C T su ~ 13 o C T su ~ 43 o C T su ~ 66 o C c Mo.=2.9~2.2 cm 2 V -1 s -1 DUV nneled (12 min) Glss plte V DS = 1 V m 8m 6m 4m 2m m SQRT Drin Current (A 1/2 ) d Mo.=~1E-4 cm 2 V -1 s -1 DUV nneled (12 min) SUS plte V DS = 1 V m.6m.4m.2m.m SQRT Drin Current (A 1/2 ) 3
4 RESEARCH SUPPLEMENTARY INFORMATION Supplementry Figure 4. () Light sorption chrcteristics of cetonitrile, ZTO solution, nd solutions with individul metl precursors. (),(c) Trnsfer chrcteristics of photo-nneled ZTO nd IZTO TFT on Si/SiO 2 wfer (with N 2 purging). The chnnel length nd width of the device were 1 μm nd 1 μm, respectively. Asornce (.u.) Acetonitrile only ZTO solution ZnCl 2 in cetonitrile SnCl 2 in cetonitrile V DS = 3 V ZTO TFT Photo-nneled W/L = 1/1 μm GI : SiO 2 (2 nm) Wvelength (nm) c IZTO TFT Photo-nneled W/L = 1/1 μm GI : SiO 2 (2 nm) V DS = 3 V
5 SUPPLEMENTARY INFORMATION RESEARCH Supplementry Figure. () A cross-section schemtic, nd () trnsfer chrcteristics of IGZO TFTs fricted on Si/SiO 2 wfer with IGZO chnnel photo-nneled in N 2 nd ir mient for 12 min. (c) Summry of the field-effect moilities of photo-nneled IGZO, IZO, In 2 O 3, ZTO, nd IZTO TFTs fricted on SiO 2 /Si wfers (W/L = 1/1 μm). For ZTO nd IZTO TFTs, reference devices were fricted t o C using rpid therml nneling system. Photo-nneled IGZO (12 min) 1. with N 2 purging 2. in ir mient 3. No chnnel isoltion SiO 2 (GI) c IZO (S) Si wfer (G) Chnnel Anneling method Anneling time (min) IGZO IZO In 2 O 3 ZTO IZTO IGZO IZO (D) Photo-nneling Photo-nneling Photo-nneling Photo-nneled IGZO TFT GI : SiO 2 (2 nm) W/L = 1/1 μm VDS = 1 V nneled in N 2 nneled in ir Averge moility (cm 2 V -1 s -1 ) Therml (@ o C) 1 4. Photo-nneling 9 inctive Therml (@ o C) 1 1. Photo-nneling 9 inctive
6 RESEARCH SUPPLEMENTARY INFORMATION Supplementry Figure 6. (),() Sttisticl dt nd verge field-effect moility of photo-nneled IGZO TFTs on SiO 2 /Si wfer. (c),(d) Sttisticl dt nd verge field-effect moility of photo-nneled In 2 O 3 TFTs on SiO 2 /Si wfer. The field-effect moilities were otined from ~2 trnsistors for ech cse, nd the error rs indicte the minimum nd mximum moilities. The chnnel length nd width of the device were 1 μm nd 1 μm, respectively. 1 1 DUV nneling time 3 minutes 6 minutes 9 minutes 12 minutes IGZO TFT on Si wfer Field-effect Moility (cm 2 /Vs) IGZO TFT on Si wfer c Moility (cm 2 V -1 s -1 ) DUV nneling time 3 minutes 6 minutes 9 minutes 12 minutes In 2O 3 TFT on Si wfer Moility (cm 2 V -1 s -1 ) Field-effect Moility (cm 2 /Vs). d DUV Anneling Time (min) In 2O 3 TFT on Si wfer DUV Anneling Time (min) 6
7 SUPPLEMENTARY INFORMATION RESEARCH Supplementry Figure 7. Electricl properties of thermlly nneled nd photo-nneled IGZO, IZO, nd In 2 O 3 TFTs fricted on glss sustrtes using 3 nm-thick Al 2 O 3 lyer s gte dielectric (for over 2 trnsistors for ech). Moility (cm 2 V -1 s -1 ) IGZO IZO In 2 O 3 Therml UV Therml UV Therml UV MAX MIN Averge Devition V T (V) IGZO IZO In 2 O 3 Therml UV Therml UV Therml UV MAX MIN Averge Devition SS (V decde -1 ) IGZO IZO In 2 O 3 Therml UV Therml UV Therml UV MAX MIN Averge Devition
8 RESEARCH SUPPLEMENTARY INFORMATION Supplementry Figure 8. Distriution of threshold voltges nd suthreshold swing vlues of thermlly nneled nd photo-nneled IGZO TFTs on glss sustrtes (for over 2 trnsistors for ech). The chnnel lengths nd widths of mesured devices were 1 μm nd 1 μm, respectively. 2 IGZO TFT (glss) 2 IZO TFT (glss) 1 In2O3 TFT (glss) 1 Therml nneling (3 o C) UV nneling 1 Therml nneling (3 o C) UV nneling 1 Therml nneling (3 o C) UV nneling VT (V) VT (V) VT (V) 2 IGZO TFT (glss) 2 IZO TFT (glss) 2 In2O3 TFT (glss) 1 Therml nneling (3 o C) UV nneling 1 Therml nneling (3 o C) UV nneling 1 Therml nneling (3 o C) UV nneling Suthreshold Slope (V decde -1 ) Suthreshold Slope (V decde -1 ) Suthreshold Slope (V decde -1 ) 8
9 SUPPLEMENTARY INFORMATION RESEARCH Supplementry Figure 9. Opticl trnsmittnce spectr of () re, nd () DUV-processed PAR films (3~8 nm). In the cse of DUV-processed PAR film, to crete n irrdition condition similr to TFT friction, 3 nm-thick Al 2 O 3 lyer ws first deposited on the PAR film nd then IGZO solution ws coted over the Al 2 O 3 lyer. Afterwrds, DUV irrdition ws crried out in N 2 mient nd finlly the IGZO film ws etched y wet-etching process. 1 9 Trnsmittnce (%) Bre PAR film DUV processed PAR film (with Al 2O 3 GI coted on top) Wvelength (nm) 9
10 RESEARCH SUPPLEMENTARY INFORMATION Supplementry Figure 1. Threshold voltge shift of photo-nneled IGZO TFTs under positive gte-is stress (PBS) condition (V GS = + V, V DS = +.1 V, t = 1, sec), () unpssivted, on PAR sustrte, () PMMA pssivted, on PAR sustrte, nd (c) unpssivted, on glss sustrte. (d) Threshold voltge shift of 3 o C nneled IGZO TFTs, unpssivted, on glss sustrte. c s 6 s 1-36 s ks 1 ks V DS = 1 V W/L = 1/1 μm s 6 s 1-36 s ks 1 ks V DS = 1 V W/L = 1/1 μm ΔV T = 1.12 V -1-1 ΔV T = 4.61 V d s 6 s 1-36 s ks 1 ks V DS = 1 V W/L = 1/1 μm s 6 s 1-36 s ks 1 ks V DS = 1 V W/L = 1/1 μm ΔV T = 3.21 V ΔV T =.86 V
11 SUPPLEMENTARY INFORMATION RESEARCH Supplementry Figure 11. Surfce morpholgies nd roughness vlues of Al 2 O 3 gte dielectric lyers deposited on glss sustrte, nd on PAR sustrte. Al 2 O 3 on glss Al 2 O 3 on PAR Roughness Al 2 O 3 Ti/Au Glss Roughness Al 2 O 3 Ti/Au PAR Root-men-squre.446 nm Root-men-squre.733 nm Pek-to-vlley nm Pek-to-vlley 7.79 nm 11
12 RESEARCH SUPPLEMENTARY INFORMATION Supplementry Figure 12. Molr concentrtion of metllic precursors in IGZO, IZO, IZTO nd In 2 O 3 solutions. The IGZO precursor solution is composed of.8 M of indium nitrte hydrte,.12 M of gllium nitrte hydrte, nd.27 M of zinc cette dihydrte in 2-ME. The IZO precursor solution is composed of. M of indium nitrte hydrte, nd. M of zinc cette dihydrte in 2-ME. The In 2 O 3 precursor solution is composed of.1 M of indium nitrte hydrte in 2-ME). Chnnel mteril indium nitrte hydrte Precursor concentrtion (M) gllium nitrte hydrte zinc cette dihydrte zinc chloride tin chloride Solvent IGZO ME IZO ME In 2 O ME IZTO ME 12
Extended InGaAs Photodiodes IG26-Series
Description The IG26series is pnchromtic PIN photodiode with nominl wvelength cutoff t 2.6 µm. This series hs been designed for demnding spectroscopic nd rdiometric pplictions. It offers excellent shunt
Rudolf C. Hoffmann, Mareiki Kaloumenos, Silvio Heinschke, Peter Jakes, Emre Erdem Rüdiger-A. Eichel, and Jörg J. Schneider *,
Molecular precursor derived and solution processed indium zinc oxide as semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition. Rudolf C.
Regular InGaAs Photodiodes IG17-Series
Description The IG7series is pnchromtic PIN photodiode with nominl wvelength cutoff t.7 µm. This series hs been designed for demnding spectroscopic nd rdiometric pplictions. It offers excellent shunt resistnce
Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-7A, R DS(ON) = V GS. =-10V = 60mW(max.
P-Chnnel Enhncement Mode MOSFET Fetures -3V/-7A, = 38mW(mx.) @ V GS =-V = 6mW(mx.) @ V GS =-4.5V % UIS + R g Tested Relible nd Rugged Led Free nd Green Devices Avilble (RoHS Complint) HBM ESD protection
Supporting Information
Solution-processed Nickel Oxide Hole Injection/Transport Layers for Efficient Solution-processed Organic Light- Emitting Diodes Supporting Information 1. C 1s high resolution X-ray Photoemission Spectroscopy
Array chip resistors size ARC241/ARC242 ARV241/ARV242
Arry chip resistors FEATURES 4 0603 sized resistors in one 1206-sized pckge Reduced reel exchnge time Low ssembly costs Reduced PCB re Reduced size of finl equipment Higher component nd equipment relibility.
STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
N - CHNNEL ENHNCEMENT MODE FST POWER MOS TRNSISTOR TYPE V DSS R DS(on) I D STE53N50 500 V < 0.085 Ω 53 TYPICL RDS(on) = 0.075 Ω HIGH CURRENT POWER MODULE VLNCHE RUGGED TECHNOLOGY VERY LRGE SO - LRGE PEK
Carbon Composition Resistors
Dimensions Cron Composition Resistors Rtings nd Dimensions Type L Specifiction Limit nd Performnce d D Derting Curve 8 6 4 (/, w) Test procedures, sequence of test, etc., refer to MIL-STD D nd JIS-C-5.
SUPPLEMENTARY INFORMATION
In the formt provided y the uthors nd unedited. SUPPLEMENTARY INFORMATION ARMOUR (7) :: SUPPLEMENTARY INFORMATION Energy udget constrints on climte sensitivity in light of inconstnt climte feedcks DOI:.3/NCLIMATE37
Micro Manipulator Array for Nano-bioelectronics Era
Micro Mnipultor Arry for Nno-bioelectronics Er K. Suzuki, Y. Nruse, H. Funki, K. Ity nd S. Uchikog Advnced Electron Devices Lbortory Corporte Reserch nd Development Center TOSHIBA Corportion Copyright
Package Code. K : SOP-8 Operating Junction Temperature Range C : -55 to 150 o C Handling Code TR : Tape & Reel. Handling Code Temperature Range
N-Chnnel Enhncement Mode MOSFET Fetures 30V/A, R DS(ON) = 16mW(mx.) @ V GS = V R DS(ON) = 22mW(mx.) @ V GS = 4.5V 0% UIS + R g Tested Relible nd Rugged Led Free nd Green Devices Avilble (RoHS Complint)
STH15NA50/FI STW15NA50
STH15N50/FI STW15N50 N - CHNNEL ENHNCEMENT MODE FST POWER MOS TRNSISTOR TYPE VDSS RDS(on) ID STH15N50 STH15N50FI STW15N50 500 V 500 V 500 V TYPICL R DS(on) = 0.33 Ω
NTMKB4895NT3G. Power MOSFET 30 V, 82 A, Single N Channel, ICEPAK
Power MOSFET V,, Single N Channel, Features Low Package Inductance Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
Time-resolved measurements of the response of a STM tip upon illumination with a nanosecond laser pulse
Appl. Phys. A 66, 65 69 (998) Applied Physics A Mterils Science & Processing Springer-Verlg 998 Time-resolved mesurements of the response of STM tip upon illumintion with nnosecond lser pulse J. Boneerg,
Flexible IGZO TFTs deposited on PET substrates using magnetron radio frequency co-sputtering system
The 2012 World Congress on Advances in Civil, Environmental, and Materials Research (ACEM 12) Seoul, Korea, August 26-30, 2012 Flexible IGZO TFTs deposited on PET substrates using magnetron radio frequency
Flexible and transparent all-graphene circuits for quaternary digital modulations
Received 27 Jun 22 Accepted 24 Jul 22 Pulished 2 Aug 22 DOI:.38/ncomms22 Flexile nd trnsprent ll-grphene circuits for quternry digitl modultions Seunghyun Lee, Kyunghoon Lee, Chng-Hu Liu, Girish S. Kulkrni
At present, flexible displays are an important focus of research1 3.
Flexile ctive-mtrix displys nd shift registers sed on solution-processed orgnic trnsistors GERWIN H. GELINCK*, H. EDZER A. HUITEMA, ERIK VAN VEENENDAAL, EUGENIO CANTATORE, LAURENS SCHRIJNEMAKERS, JAN B.
Research Letter Investigation of CMOS Varactors for High-GHz-Range Applications
Reserch Letters in Electronics Volume 29, Article ID 53589, 4 pges doi:1.1155/29/53589 Reserch Letter Investigtion of CMOS Vrctors for High-GHz-Rnge Applictions Ming Li, Rony E. Amy, Roert G. Hrrison,
Localization of Latent Image in Heterophase AgBr(I) Tabular Microcrystals
Interntionl ymposium on ilver Hlide Technology Locliztion of Ltent Imge in Heterophse AgBr(I) Tulr Microcrystls Elen V. Prosvirkin, Aigul B. Aishev, Timothy A. Lrichev, Boris A. echkrev Kemerovo tte University,
High-Speed Scalable Silicon-MoS 2 P-N Heterojunction Photodetectors
High-Speed Scalable Silicon-MoS 2 P-N Heterojunction Photodetectors Veerendra Dhyani 1, and Samaresh Das 1* 1 Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi-110016,
Anti-Surge Thick Film Chip Resistors Rtings ERJP3 (63) (63) ERJP6 ERJP8 (26) ERJP4 (2) Power Rting (3) t 7 C (W) Element Voltge () Mximum Overlod Volt
Anti-Surge Thick Film Chip Resistors Anti-Surge Thick Film Chip Re sis tors 63, 85, 26, 2 : ERJ P3, PA3, P6, P8, P4 Fetures ESD surge chrcteristics superior to stndrd metl fi lm resistors High relibility
ISSCC 2006 / SESSION 21 / ADVANCED CLOCKING, LOGIC AND SIGNALING TECHNIQUES / 21.5
21.5 A 1.1GHz Chrge-Recovery Logic Visvesh Sthe, Jung-Ying Chueh, Mrios Ppefthymiou University of Michign, Ann Aror, MI Boost Logic is chrge-recovery circuit fmily cple of operting t GHz-clss frequencies
Supplementary Information
Supplementary Information Wireless thin film transistor based on micro magnetic induction coupling antenna Byoung Ok Jun 1, Gwang Jun Lee 1, Jong Gu Kang 1,2, Seung Uk Kim 1, Ji Woong Choi 1, Seung Nam
High-resolution electrohydrodynamic jet printing
High-resolution electrohydrodynmic jet printing JANG-UNG PARK 1, MATT HARDY 1, SEONG JUN KANG 1,2, KIRA BARTON 3, KURT ADAIR 3, DEEP KISHORE MUKHOPADHYAY 3, CHANG YOUNG LEE 4, MICHAEL S. STRANO 4, ANDREW
ARC DISCHARGE AND EROSION BEHAVIOR OF SILVER ELECTRIC CONTACTS BETWEEN STATIC GAP
ARC DISCHARGE AND EROSION BEHAVIOR OF SILVER ELECTRIC CONTACTS BETWEEN STATIC GAP Chung, H-H. 1 Lee, R-T. 2. Chiou, Y-C. 2 1 Deprtment of Automtion Engineering Ko-Yun Institute of Technology 2 Deprtment
High Performance Visible-Blind Ultraviolet Photodetector Based on
Supplementary Information High Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction Jingjing Yu a,b, Kashif Javaid b,c, Lingyan Liang b,*, Weihua Wu a,b,
Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor
Supporting Information Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor Xiang Xiao 1, Letao Zhang 1, Yang Shao 1, Xiaoliang Zhou 2, Hongyu He 1, and Shengdong Zhang 1,2 * 1 School
STP60NE06L-16 STP60NE06L-16FP
STP60NE06L-16 STP60NE06L-16FP N - CHNNEL 60V - 0.014Ω - 60 TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP60NE06L-16 STP60NE06L-16FP 60 V 60 V
SSM4452. N-Channel Enhancement Mode MOSFET FEATURES. Product Summary SO-8. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
SSM NChnnel Enhncement Mde MOSFET DS () Prduct Summry ID () RDS(ON) (m ) Mx 7 SO @GS = @GS = FETURES 7 @GS =. D ( 7 ) Super high density cell design fr lw RDS(ON). Rugged nd relible. SO pckge. Pb free.
Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist
PACS 73.20.Mf, 78.67.-n, 81.16.nd, 85.40.Hp Nnoptterning Au chips for SPR refrctometer y using interference lithogrphy nd chlcogenide photoresist V.A. Dn ko, G.V. Dorozinsky, I.Z. Indutnyi, V.I. Myn ko,
SSM9423. P-Channel Enhancement Mode MOSFET FEATURES. Product Summary SO-8. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Phnnel Enhncement Mde MOSFET Prduct Summry SO DS () ID () DS(ON) (mω) Mx 7 6 @GS =. 6 @GS =. 9 @GS =. D (, 6, 7, ) FETUES Super high density cell design fr lw DS(ON). ugged nd relible. SO pckge. Pb free.
N - CHANNEL 600V Ω A TO-220/TO-220FP PowerMESH ΙΙ MOSFET 4.2 A 4.2 A. Symbol Parameter Value Unit
STP4NC60 STP4NC60FP N - CHNNEL 600V - 1.8 Ω - 4.2 TO-220/TO-220FP PowerMESH ΙΙ MOSFET PRELIMINRY DT TYPE VDSS RDS(on) ID STP4NC60 STP4NC60FP 600 V 600 V
User view of MEB Maskless Lithography
User view of MEB Mskless Lithogrphy Jck J.H. Chen 2010 Interntionl Symposium on Lithogrphy Extensions Kobe, Oct 22, 2010 Outlines ITRS rodmp Performnce of MAPPER Pre-lph tool @ TSMC Chllenges nd solutions
PRELIMINARY DATA TYPE V DSS R DS(on) I D STW8NB V < 1.5 Ω 8 A
STW8NB100 N - CHNNEL 1000V - 1.2Ω - 8 - TO-247 PowerMESH MOSFET PRELIMINRY DT TYPE V DSS R DS(on) I D STW8NB100 1000 V < 1.5 Ω 8 TYPICL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CPBILITY ± 30V GTE TO SOURCE
2N6071A/B Series. Sensitive Gate Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 A RMS, V
Preferred Device Sensitive Gte Trics Silicon Bidirectionl Thyristors Designed primrily for full-wve AC control pplictions, such s light dimmers, motor controls, heting controls nd power supplies; or wherever
MSR860G, MSRF860G. Switch-mode Soft Recovery Power Rectifiers. Plastic TO 220 Package SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES, 600 VOLTS
MSRG, MSRFG Switch-mode Soft Recovery Power Rectifiers Plastic TO Package These state of the art devices are designed for use as free wheeling diodes in variable speed motor control applications and switching
Experiment 3: The research of Thevenin theorem
Experiment 3: The reserch of Thevenin theorem 1. Purpose ) Vlidte Thevenin theorem; ) Mster the methods to mesure the equivlent prmeters of liner twoterminl ctive. c) Study the conditions of the mximum
MOS FIELD EFFECT TRANSISTOR
DT SHEET MOS FIELD EFFECT TRNSISTOR μp235 DUL Nch MOSFET FOR SWITCHING DESCRIPTION The μp235 is a Dual N-channel MOSFET designed for Li-ion battery protection circuit. Ecologically Flip chip MOSFET for
Low dark signal low readout noise/front-illuminated FFT-CCD
IMAGE SENSOR CCD re imge sensor S997/S9971 series Low drk signl low redout noise/front-illuminted FFT-CCD S997/S9971 series re fmilies of FFT-CCD imge sensors specificlly designed for low-light-level detection
Anti-Surge Thick Film Chip Resistors
Anti-Surge Thick Film Chip Resistors Anti-Surge Thick Film Chip Re sis tors Type: ER PA, P3, PA3, P, P8, P4 Fetures ESD surge chrcteristics superior to stndrd metl fi lm resistors High relibility Metl
Transparent p-type SnO Nanowires with Unprecedented Hole Mobility among Oxide Semiconductors
Supplementary Information Transparent p-type SnO Nanowires with Unprecedented Hole Mobility among Oxide Semiconductors J. A. Caraveo-Frescas and H. N. Alshareef* Materials Science and Engineering, King
THERMOPHOTOVOLTAIC CONVERTERS WITH SOLAR POWERED HIGH TEMPERATURE EMITTERS
THERMOPHOTOVOLTAIC CONVERTERS WITH SOLAR POWERED HIGH TEMPERATURE EMITTERS V.M.Andreev, V.P.Khvostikov, V.D.Rumyntsev, O.A.Khvostikov, P.Y.Gzryn, A.S.Vlsov, N.A.Sdchikov, S.V.Sorokin, Y.M.Zdirnov, M.Z.Shvrts
FATIGUE BEHAVIOUR OF COMPOSITE JOINTS WITH HEXAGON BOLTS
FATIGUE BEHAVIOUR OF COMPOSITE JOINTS WITH HEXAGON BOLTS Romn Strikov nd Jokim Schön Deprtment of Aeronutics, Royl Institute of Technology SE-1 44 Stockholm, Sweden Structures nd Mterils Deprtment, Aeronutics
NTD4813N. Power MOSFET 30 V, 40 A, Single N -Channel, DPAK/IPAK
NTD813N Power MOSFET 3 V,, Single N -Channel, DPK/IPK Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These
Magnetic monopole field exposed by electrons
Mgnetic monopole field exposed y electrons A. Béché, R. Vn Boxem, G. Vn Tendeloo, nd J. Vereeck EMAT, University of Antwerp, Groenenorgerln 171, 22 Antwerp, Belgium Opticl xis Opticl xis Needle Smple Needle
ZTR250 ZTR500 FIXED 2.5 AND 5 VOLT 3-TERMINAL VOLTAGE REFERENCES ISSUE 4 - MARCH 1998 DEVICE DESCRIPTION FEATURES APPLICATIONS SCHEMATIC DIAGRAM
FIXED 2.5 AND 5 VOLT 3-TERMINAL VOLTAGE REFERENCES ISSUE 4 - MARCH 1998 Plese Use ZMR Series ZTR25 ZTR5 DEVICE DESCRIPTION The ZTR25 nd ZTR5 re precision three terminl references. These devices re idel
Pavos Series - Small Aperture ( 5mm) nm Faraday Rotators and Isolators
Trnsmission (%) Isoltion (db) Trnsmission (%) Isoltion (db) Benefits: Pvos Series - Smll Aperture ( 5mm) 1010-1080nm Frdy Rottors nd Isoltors EOT s Pvos Series Frdy Rottors rotte the plne of polrized light
Investigation of Photovoltaic Properties of In:ZnO/SiO 2 /p- Si Thin Film Devices
Universities Research Journal 2011, Vol. 4, No. 4 Investigation of Photovoltaic Properties of In:ZnO/SiO 2 /p- Si Thin Film Devices Kay Thi Soe 1, Moht Moht Than 2 and Win Win Thar 3 Abstract This study
Fusible Thin Film Chip Resistor
Fusile Thin Film Chip Resistor M25SI fusile thin film chip resistors re designed for overlod protection in modern professionl electronics. Typicl pplictions include utomotive, telecommuniction nd industril
STP55NE06 STP55NE06FP
STP55NE06 STP55NE06FP N - CHNNEL ENHNCEMENT MODE SINGLE FETURE SIZE POWER MOSFET TYPE V DSS R DS(on) I D STP55NE06 STP55NE06FP 60 V 60 V
2N6071A/B Series. Silicon Bidirectional Thyristors TRIACS 4.0 A RMS, V
Preferred Device Sensitive Gte Trics Silicon Bidirectionl Thyristors Designed primrily for full wve AC control pplictions, such s light dimmers, motor controls, heting controls nd power supplies; or wherever
Radiation-Induced Fault Simulation of SOI/SOS CMOS LSI s Using Universal Rad-SPICE MOSFET Model
J Electron Test (2017) 33:37 51 DOI 10.1007/s10836-016-5635-8 Rdition-Induced Fult Simultion of SOI/SOS CMOS LSI s Using Universl Rd-SPICE MOSFET Model Konstntin O. Petrosynts 1,2 & Lev M. Smursky 1,2
This Week s Subject. DRAM & Flexible RRAM. p-channel MOSFET (PMOS) CMOS: Complementary Metal Oxide Semiconductor
DRAM & Flexible RRAM This Week s Subject p-channel MOSFET (PMOS) CMOS: Complementary Metal Oxide Semiconductor CMOS Logic Inverter NAND gate NOR gate CMOS Integration & Layout GaAs MESFET (JFET) 1 Flexible
MSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS
MSR56G, MSRF56G Switch-mode Soft Recovery Power Rectifier These state of the art devices are designed for boost converter or hard switched converter applications, especially for Power Factor Correction
STP12NB30 STP12NB30FP
STP12NB30 STP12NB30FP N - CHNNEL ENHNCEMENT MODE PowerMESH MOSFET PRELIMINRY DT TYPE V DSS R DS(on) I D STP3NB60 STP12NB30FP 300 V 300 V
Single and multiple optical switches that use freestanding silicon nanowire waveguide couplers
(2012) 1, e16; doi:10.1038/ls.2012.16 ß 2012 CIOMP. All rights reserved 2047-7538/12 www.nture.com/ls ORIGINAL ARTICLE Single nd multiple opticl switches tht use freestnding silicon nnowire wveguide couplers
Improved Inverter: Current-Source Pull-Up. MOS Inverter with Current-Source Pull-Up. What else could be connected between the drain and V DD?
Improved Inverter: Current-Source Pull-Up MOS Inverter with Current-Source Pull-Up What else could be connected between the drain and? Replace resistor with current source I SUP roc i D v IN v OUT Find
Static and dynamic back-corona characteristics
Sttic nd dynmic ck-coron chrcteristics Ginluc Bcchieg, Ivo Gllimerti, IRS srl - vi Vigonovese 81-35124 Pdov - Itly (e-mil: cchieg@irswe.it) Véronique Arrondel, Philippe Rizer, Jérôme Lecointre, Michel
Experiment 3. 3 MOSFET Drain Current Modeling. 3.1 Summary. 3.2 Theory. ELEC 3908 Experiment 3 Student#:
Experiment 3 3 MOSFET Drain Current Modeling 3.1 Summary In this experiment I D vs. V DS and I D vs. V GS characteristics are measured for a silicon MOSFET, and are used to determine the parameters necessary
SUPPLEMENTARY INFORMATION
doi:.38/nture14441 1. Mteril nd device stck optimiztion Lower electroforming voltges reduce the electricl stress s well s current overshoot during the forming, which is known risk fctor contriuting to
STP30NE06L STP30NE06LFP
STP30NE06L STP30NE06LFP N - CHNNEL 60V - 0.035 Ω - 30 - TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP30NE06L STP30NE06LFP 60 V 60 V TYPICL RDS(on) = 0.035 Ω 100% VLNCHE TESTED LOW GTE
Lab 8. Speed Control of a D.C. motor. The Motor Drive
Lb 8. Speed Control of D.C. motor The Motor Drive Motor Speed Control Project 1. Generte PWM wveform 2. Amplify the wveform to drive the motor 3. Mesure motor speed 4. Mesure motor prmeters 5. Control
MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package
MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal
MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS
MBRD62CTG Series, NRVBD64CTG Series Switch Mode Power Rectifiers DPK 3 Surface Mount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling
Three-Phase High Frequency AC Conversion Circuit with Dual Mode PWM/PDM Control Strategy for High Power IH Applications
Interntionl Journl of Electricl nd Electronics Engineering 3: 009 hree-phse High Frequency AC Conversion Circuit with Dul Mode /PDM Control Strtegy for High Power IH Applictions Nbil A. Ahmed Abstrct his
MOSFET & IC Basics - GATE Problems (Part - I)
MOSFET & IC Basics - GATE Problems (Part - I) 1. Channel current is reduced on application of a more positive voltage to the GATE of the depletion mode n channel MOSFET. (True/False) [GATE 1994: 1 Mark]
Future MOSFET Devices using high-k (TiO 2 ) dielectric
Future MOSFET Devices using high-k (TiO 2 ) dielectric Prerna Guru Jambheshwar University, G.J.U.S. & T., Hisar, Haryana, India, prernaa.29@gmail.com Abstract: In this paper, an 80nm NMOS with high-k (TiO
Supporting Information
Supporting Information Fabrication and Transfer of Flexible Few-Layers MoS 2 Thin Film Transistors to any arbitrary substrate Giovanni A. Salvatore 1, *, Niko Münzenrieder 1, Clément Barraud 2, Luisa Petti
1, 1.5, 2, 2.5, , 0.75, 1, 1.5, , 3, , 4.5, 5, 5.5, , 4.5, 0.5, 5, , , 6.
Resistors Metl Strip Current Sense Resistors Surfce Mount Metl Strip Current Sense Resistors Surfce Mount Metl Element Current Metl Resistors Element UR Series UR Series Current Metl Resistor Element Resistnce
High mobility 4H-SiC MOSFET using a combination of counter-doping and interface trap passivation
1 SiC MOS Workshop August 14 th 2014, University of Maryland High mobility 4H-SiC MOSFET using a combination of counter-doping and interface trap passivation Aaron Modic 1, A. Ahyi 1, G. Liu 2, Y. Xu 2,P.
Power rating at 80 C watts R0005 ohms R0006 to R01. R001 to R01 Power. to R015. (mω) 1 0.2, 0.25, 0.3, 0.
Resistors Metl Strip Current Sense Resistors Surfce Mount Resistors Metl Element Current Metl Element Sense Resistor UR Series UR Current Series Sense Resistor Resistnce R000 (m ) to R0 (m ) Metl UR Robust
BCR16A, BCR16B, BCR16C, BCR16E
MITSUBISHI SEMICONDUCTOR TRIC, B, C : NON-INSULTED TYPE, E : INSULTED TYPE, GLSS PSSITION TYPE OUTLINE DRWING Dimensions in mm φ. MIN φ. MIN 4 MX φ8. MX 6. MX 9 MX φ. MX MX IT (RMS)... 6 DRM...4/ IFGT!,
Exercise 1-1. The Sine Wave EXERCISE OBJECTIVE DISCUSSION OUTLINE. Relationship between a rotating phasor and a sine wave DISCUSSION
Exercise 1-1 The Sine Wve EXERCISE OBJECTIVE When you hve completed this exercise, you will be fmilir with the notion of sine wve nd how it cn be expressed s phsor rotting round the center of circle. You
15A, 45V - 200V Dual Common Cathode Schottky Rectifiers
CRET BY RT 45-200 5, 45V - 200V Dual Common Cathode Schottky Rectifiers FETURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS
High Voltage, Input Rectifier Diode, 20 A
VS-2ETS6PbF, VS-2ETS6-M3 High Voltage, Input Rectifier Diode, 2 2 TO-22C 3 Base cathode 2 3 Cathode node FETURES Very low forward voltage drop 5 C max. operating junction temperature Glass passivated pellet
High Voltage Surface Mount Input Rectifier Diode, 20 A
VS-2ETS8SPbF, VS-2ETS2SPbF High Voltage Surface Mount Input Rectifier Diode, 2 FETURES 2 TO-263 (D 2 PK) 3 node ase cathode 2 3 node Meets MSL level, per J-STD-2, LF maximum peak of 26 C Glass passivated
Ultra Low Cost ACCELEROMETER
Chip Scle Pckged Fully Integrted Therml Accelerometer MXC622xXC Rev,A 8/19/2011 Pge 1 of 13 Fetures Generl Description Fully Integrted Therml Accelerometer X/Y Axis, 8 bit, Accelertion A/D Output (± 2g)
ECSE-6300 IC Fabrication Laboratory Lecture 7 MOSFETs. Lecture Outline
ECSE-6300 IC Fabrication Laboratory Lecture 7 MOSFETs Prof. Rensselaer Polytechnic Institute Troy, NY 12180 Office: CII-6229 Tel.: (518) 276-2909 e-mails: luj@rpi.edu http://www.ecse.rpi.edu/courses/s16/ecse
KHB1D9N60I SEMICONDUCTOR TECHNICAL DATA. General Description IPAK(1)
SEMICONDUCTOR TECHNIC DT KHB1D9N6D/I N CHNNE MOS FIED EFFECT TRNSISTOR eneral Description KHB1D9N6D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,
Ultra Low Cost ACCELEROMETER
Chip Scle Pckged Digitl Therml Orienttion Sensing Accelerometer MXC6226XC Document Version D Pge 1 of 13 Fetures Generl Description Fully Integrted Therml Accelerometer X/Y Axis, 8 bit, Accelertion A/D
MBR7030WTG. Switch Mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 70 AMPERES, 30 VOLTS
Switch Mode Power Rectifier The Switch Mode power rectifier, a state of the art device, employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features Dual Diode Construction;
Fast Soft Recovery Rectifier Diode, 80 A
VS-8PF..PbF Series, VS-8PF..-M3 Series Fast Soft Recovery Rectifier Diode, 8 Base cathode + 2 FETURES Glass passivated pellet chip junction 15 C max. operating junction temperature Low forward voltage
A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure
sensors Article A Low-Noise X-ry Astronomicl Silicon-On-Insultor Pixel Detector Using Pinned Depleted Diode Structure Hiroki Kmehm 1, Shoji Kwhito 2, *, Sumeet Shresth 2, Syunt Nknishi 2, Keit Ysutomi
Synchronous Machine Parameter Measurement
Synchronous Mchine Prmeter Mesurement 1 Synchronous Mchine Prmeter Mesurement Introduction Wound field synchronous mchines re mostly used for power genertion but lso re well suited for motor pplictions
P-Channel 100-V (D-S) MOSFET
SUM9P-9L P-Channel -V (D-S) MOSFET PRODUCT SUMMRY V DS (V) R DS(on) (Ω) I D () Q g (Typ.).9 at V GS = - V - 9 -.2 at V GS = - 4.5 V - 85 97 nc FETURES TrenchFET Power MOSFET Compliant to RoHS Directive
State-of-The-Art Dielectric Etch Technology
State-of-The-Art Dielectric Etch Technology Koichi Yatsuda Product Marketing Manager Etch System Business Unit November 5 th, 2010 TM Outline Dielectric Etch Challenges for State-of-The-Art Devices Control
Features -3.1A -2.0A. Pin Configuration
DMC238LVT COMPLEMENTRY PIR ENHNCEMENT MODE MOSFET Product Summary Features Device V (BR)DSS R DS(ON) Q 2V Q2-2V Description 35mΩ @ V GS = 4.5V 4.5 56mΩ @ V GS =.8V 3.5 74mΩ @ V GS = -4.5V 68mΩ @ V GS =
MEASURE THE CHARACTERISTIC CURVES RELEVANT TO AN NPN TRANSISTOR
Electricity Electronics Bipolr Trnsistors MEASURE THE HARATERISTI URVES RELEVANT TO AN NPN TRANSISTOR Mesure the input chrcteristic, i.e. the bse current IB s function of the bse emitter voltge UBE. Mesure
Fast Soft Recovery Rectifier Diode, 20 A
VS-2ETF..PbF Series, VS-2ETF..-M3 Series Fast Soft Recovery Rectifier Diode, 2 FETURES 2 TO-22C 3 Base cathode 2 3 Cathode node Glass passivated pellet chip junction C max operating junction temperature
Study of the formation of a microrelief on ZnSe- and CdSe-crystal surfaces ablated by excimer KrF-laser radiaton
Quntum Electronics () 9 9 () Kvntovy Elektronik nd Turpion Ltd DOI:.7/QEL Study of the formtion of microrelief on ZnSe- nd CdSe-crystl surfces lted y excimer KrF-lser rditon S.K. Vrtpetov, A.V. Zkhryp,
NCS20061, NCV20061, NCS20062, NCV20062, NCS20064, NCV Operational Amplifier, Rail-to-Rail Input and Output, 3 MHz
NCS, NCV, NCS, NCV, NCS, NCV Operational mplifier, Rail-to-Rail Input and Output, MHz The NCS series operational amplifiers provide rail to rail input and output operation, MHz bandwidth, and are available
MBR2045EMFST3G NRVB2045EMFST3G. Switch-mode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS
MBR045EMFS, NRVB045EMFS Switch-mode Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection
High Performance Thin Film Optical Coatings Technical Reference Document 09/13. Coatings Capabilities. Heat Control - Hot Mirror Filters
Heat Control - Hot Mirror Filters A hot mirror is in essence a thin film coating applied to substrates in an effort to reflect infra-red radiation either as a means to harness the reflected wavelengths
SUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION doi:10.1038/nature11293 1. Formation of (111)B polar surface on Si(111) for selective-area growth of InGaAs nanowires on Si. Conventional III-V nanowires (NWs) tend to grow in
IT (AV) A VDRM V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=30 C A ITSM
CRM-8 GLSS PSSITION TYPE CRM-8 OUTLINE DRWING φ. MX. Dimensions in mm T TERMINL T TERMINL GTE TERMINL OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM... IGT...µ JEDEC : TO-9 PPLICTION
N-Channel 40-V (D-S) MOSFET
N-Channel 4-V (D-S) MOSFET PRODUCT SUMMRY V DS (V) R DS(on) (Ω) I D () a, c Q g (Typ.) 4.2 at V GS = V.24 at V GS = 4.5 V 24 nc T O-263 FETURES TrenchFET Power MOSFET % R g and UIS Tested PPLICTIONS Synchronous
MBRB3030CTLG NRVBB3030CTLG. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 30 VOLTS
MBRB33CTLG, NRVBB33CTLG SWITCHMODE Power Rectifier These state of the art devices use the Schottky Barrier principle with a proprietary barrier metal. Features Dual Diode Construction, May be Paralleled
Supporting Information
Supporting Information Fabrication of High-Performance Ultrathin In 2 O 3 Film Field-Effect Transistors and Biosensors Using Chemical Lift-Off Lithography Jaemyung Kim,,,# You Seung Rim,,,# Huajun Chen,,
LSI ON GLASS SUBSTRATES
LSI ON GLASS SUBSTRATES OUTLINE Introduction: Why System on Glass? MOSFET Technology Low-Temperature Poly-Si TFT Technology System-on-Glass Technology Issues Conclusion System on Glass CPU SRAM DRAM EEPROM
Fabrication of 3D Air-core MEMS Inductors for High Frequency Power Electronic Applications
Downloded from orit.dtu.dk on: Nov 24, 218 Friction of 3D Air-core MEMS Inductors for High Frequency Power Electronic Applictions Lê Thnh, Hoà; Mizushim, Io; Nour, Ysser; Tng, Peter Toren; Knott, Arnold;