Regular InGaAs Photodiodes IG17-Series
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- Lionel Bruce
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1 Description The IG7series is pnchromtic PIN photodiode with nominl wvelength cutoff t.7 µm. This series hs been designed for demnding spectroscopic nd rdiometric pplictions. It offers excellent shunt resistnce in combintion with superior responsivity over wide rnge. Fetures 5 % cutoff wvelength >.65 µm pek responsivity:.5 A/W Excellent temperture stbility Reduced edge effect Applictions Spectrophotometer Diode lser monitoring Noncontct temperture mesurement Flme control Moisture monitoring Versions Uncooled TOcn, SMD, chip only, cermic substrte, digitl module Cooled TE, TE2, TE3
2 Opticl Chrcteristics, 25 C c 5% Cut off Wvelength Pek Wvelength Pek Responsivity,b 52 nm,b,d 3 nm,b 5 nm,b Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. S4i 25 IG7X5S4i 5 IG7XS4i IG7X3S4i 3 >.65 ± TBD IG7X2Gi 2 Gi 3 Prmeter tested on btch level t T =25 C. b Responsivity mesured t V Bis. c Dt re prior to window integrtion d Preliminry dt ElectroOpticl Chrcteristics, 25 C Shunt = mv b [MOhm] Drk = 5 V b [na] Pek D* f= khz [cm Hz ½ /W] Pek NEP f= khz [W/Hz ½ ] Min. Typ. Typ. Mx. Min. Typ. Mx. Typ. S4i E+2. E+3. E4 5. E5 IG7X5S4i E+2 7. E+2.8 E4. E4 IG7XS4i E+2 7. E E4.4 E4 IG7X3S4i E E E4 2. E4 IG7X2Gi E E E4 3.2 E4 Gi E E+2 7. E4 4. E4 Prmeter tested on btch level b Prmeter % tested 2
3 Electricl Chrcteristics, 25 C = V [pf] Forwrd Voltge [V] Typ. Typ. S4i 25 5 IG7X5S4i 5 6 IG7XS4i 25 IG7X3S4i IG7X2Gi 2 7 Gi 3 55 Thermoelectriclly Cooled InGAs Detectors Operting Temperture [ C] Shunt = mv b [MOhm] Pek D* [cm Hz ½ /W] Pek NEP [W/Hz ½ ] = V [pf] Min. Typ. Typ. Typ. Typ. IG7XT E+3 2.E5 25 IG7X3T E+3 2.9E IG7X2T E+3 4.9E5 7 T E+3 6.6E5 55 IG7XT9 5 9.E+4 7.9E6 25 IG7X3T9 3 2.E+3.E IG7X2T9 2 4.E+3.7E5 7 T E+3 5.5E5 55 Prmeter tested on btch level b Prmeter % tested 3
4 Absolute Mximum Rtings Min. Mx. Storge Temperture [ C] Operting Temperture [ C] Reverse Bis, cw [V] Forwrd Current, cw [ma] Soldering Temperture, 5 sec. [ C] 26 ESD Dmge Threshold, Humn Body Model Clss A*, [V] 25 <5 TE Cooler Voltge [V] T7 T TE Cooler Current [A] T7 T9.9.2 *ANSI/ ESD STN
5 Fig. : Spectrl Response Fig. 2: Drk Current vs. Reverse Voltge Responsivity (A/W),6,4,2,8,6,4 65 C 4 C,2 25 C 2 C Wvelength (nm) Drk Current (A), T = 25 C,E7 IG7X2,E8 IG7X3 IG7X,E9,E,E Reverse Voltge (V) Fig. 3: Shunt vs. Temperture Fig. 4: Detectivity vs. Shunt x Are,E+5, Vr = mv, T = 25 C Shunt (MΩ),E+4,E+3,E+2,E+,E+ IG7X5 IG7X IG7X3 IG7X2,E Temperture ( C) Detectivity D* (x 2 cmhz /2 /W) 9 8 IG7X2 7 6 IG7X Ro Are (x5 cm2 Ω) Fig. 5: Cpcitnce vs. Reverse Voltge Fig. 6: Responsivity Temperture Coefficient I,E+4,8 Cpcitnce (pf),e+3,e+2,e+ IG7X2 IG7X3 IG7X IG7X5 % Chnge / C,6,4,2,2,4,6,8 25 C to 65 C 4 C to 25 C,E Reverse Voltge (V) Wvelength (nm) 5
6 Fig. 7: Responsivity Temperture Coefficient II Fig. 8: Smple Pulse Response 4,2, λ Test =3nm, Frequency = khz RL = 5Ω, Bis = V % Chnge / C 3 25 C to 65 C 2 4 C to 25 C Wvelength (nm) Normlized Response (.u.),8,6,4, Time (µs) Fig. 9: Linerity, Wvelength = 3nm Reltive Sensitivity (%) Incident Light Level (mw) 6
7 Nomenclture C I G 7 X 2 5 S 4 i Type Pckge Style Chip only Regulr InGAs PIN Photodiode 25 = 25 µm 5 = 5 µm S4i TO46, isolted S4ix TO46, no window = mm Gi TO39, isolted 3 =.3 mm Gix TO39, no window 2 = 2 mm T7 TO37, single stge TEC 3 = 3 mm T9 TO66, dul stge TEC M2 2 pd PCB SMD L5 TO46 lens cp Note: M2 pckge is high volume option for chip sizes up to mm. Plese contct fctory for vilbility. Stndrd window: Borosilicte glss Pckge drwings, TEC nd thermistor curves cn be found on seprte dtsheet. Product Chnges 77/6 / V6 / HW / lcdgi/ig7series LASER COMPONENTS reserves the right to mke chnges to the product(s) or informtion contined herein without notice. No libility is ssumed s result of their use or ppliction. Ordering Informtion Products cn be ordered directly from LASER COMPONENTS or its representtives. For complete listing of representtives, visit our website t
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