Low dark signal low readout noise/front-illuminated FFT-CCD

Transcription

1 IMAGE SENSOR CCD re imge sensor S997/S9971 series Low drk signl low redout noise/front-illuminted FFT-CCD S997/S9971 series re fmilies of FFT-CCD imge sensors specificlly designed for low-light-level detection in scientific pplictions. S997/S9971 series offer lower drk current nd lower redout noise thn S71/S711 series tht hve een mrketed. By using the inning opertion, S997/S9971 series cn e used s liner imge sensor hving long perture in the direction of the device length. This mkes S997/S9971 series idelly suited for use in spectrophotometry. The inning opertion offers significnt improvement in S/N nd signl processing speed compred with conventionl methods y which signls re digitlly dded y n externl circuit. S997/S9971 series lso feture low noise nd low drk signl (MPP mode opertion). This enles low-light-level detection nd long integrtion time, thus chieving wide dynmic rnge. S997/S9971 series hve n effective pixel size of 4 4 µm nd re ville in imge res rnging from 1.88 (H) 1.44 (V) mm (51 6 pixels) up to lrge imge re of (H) 6.48 (V) mm (14 5 pixels). S997/S9971 series re pin comptile with S71/S711 series. (Operting conditions re little it chnged from S71/S711 series.) Fetures l Low drk signl: 1 e - /pixel/s Typ. ( C, MPP mode) l Low redout noise: 4 e - rms Typ. l 51 (H) 6 (V) to 14 (H) 5 (V) pixel formt l Pixel size: 4 4 µm l Line/pixel inning l 1 % fill fctor l Wide dynmic rnge l MPP opertion Selection guide Type No. Cooling Numer of totl pixels Applictions l Fluorescence spectrometer, ICP l Rmn spectrometer l Industril inspection requiring l Semiconductor inspection l DNA sequencer l Low-light-level detection Numer of ctive pixels Active re [mm (H) mm (V)] Suitle multichnnel Detector hed S S Non-cooled S C7 S S S One-stge C71 S TE-cooled S C75 Generl rtings Prmeter Specifiction Pixel size 4 (H) 4 (V) µm Verticl clock phse phse Horizontl clock phse phse Output circuit One-stge MFET source follower Pckge 4 pin cermic DIP (refer to dimensionl outlines) Window * 1 S997 series: qurtz glss S9971 series: spphire glss *1: Temporry window type (ex. S997-96N) nd UV cot type (ex. S997-96UV) re ville upon request. (Temporry window is fixed y tpe to protect the CCD chip nd wire onding.) 1

2 CCD re imge sensor S997/S9971 series Asolute mximum rtings (T=5 C) Prmeter Symol Min. Typ. Mx. Unit Operting temperture Topr C Storge temperture Tstg C OD voltge VOD V RD voltge VRD V ISV voltge VISV V ISH voltge VISH V IGV voltge VIG1V, VIGV V IGH voltge VIG1H, VIGH V SG voltge VSG V OG voltge VOG V voltge V V TG voltge VTG V Verticl clock voltge VP1V, VPV V Horizontl clock voltge VP1H, VPH V Operting conditions (MPP mode, T=5 C) Prmeter Symol Min. Typ. Mx. Unit Output trnsistor drin voltge VOD 18 V Reset drin voltge VRD V Output gte voltge VOG V Sustrte voltge VSS - - V Test point (verticl input source) VISV - VRD - V Test point (horizontl input source) VISH - VRD - V Test point (verticl input gte) VIG1V, VIGV -8 - V Test point (horizontl input gte) VIG1H, VIGH -8 - V Verticl shift register High VP1VH, VPVH 4 6 clock voltge Low VP1VL, VPVL V Horizontl shift register High VP1HH, VPHH 4 6 clock voltge Low VP1HL, VPHL V Summing gte voltge High VSGH 4 6 Low VSGL V Reset gte voltge High VH 4 6 Low VL V Trnsfer gte voltge High VTGH 4 6 Low VTGL V Electricl chrcteristics (T=5 C) Prmeter Symol Remrk Min. Typ. Mx. Unit Signl output frequency fc MHz S997/S Verticl shift register S997/S CP1V, CPV cpcitnce S997/S pf S997/S S997/S Horizontl shift register S997/S CP1H, CPH cpcitnce S997/S pf S997/S Summing gte cpcitnce CSG pf Reset gte cpcitnce C pf S997/S Trnsfer gte S997/S CTG cpcitnce S997/S pf S997/S Trnsfer efficiency CTE * DC output level Vout * V Output impednce Zo * kω Power dissiption P * 3, * mw *: Chrge trnsfer efficiency per pixel, mesured t hlf of the full well cpcity. *3: The vlues depend on the lod resistnce. (VOD= V, Lod resistnce= kω) *4: Power dissiption of the on-chip mplifier.

3 CCD re imge sensor S997/S9971 series Electricl nd opticl chrcteristics (T=5 C, unless otherwise noted) Prmeter Symol Remrk Min. Typ. Mx. Unit Sturtion output voltge Vst - - Fw Sv - V Full well Verticl Fw - cpcity Horizontl ke - CCD node sensitivity Sv * µv/e - Drk current +5 C - 3 DS * (MPP mode) C e - /pixel/s Redout noise Nr * e - rms Dynmic rnge Line inning * Are scnning Spectrl response rnge λ to 11 - nm Photo response non-uniformity PRNU * ±1 % Point defects * Blemish Cluster defects - * Column defects * *5: VOD= V, Lod resistnce= kω *6: Drk current nerly doules for every 5 to 7 C increse in temperture. *7: -4 C, operting frequency is 8 khz. *8: DR = Fw / Nr *9: Mesured t hlf of the full well cpcity. PRNU = noise / signl 1 [%], noise: fixed pttern noise (pek to pek) *1: White spots > 3 % of full well t C fter Ts=1 s Blck spots Pixels whose sensitivity is lower thn one-hlf of the verge pixel output. (Mesured with uniform light producing onehlf of the sturtion chrge) *11: to 9 contiguous defective pixels *1: 1 or more contiguous defective pixels Spectrl response (without window) Spectrl trnsmittnce chrcteristics 5 (Typ. T=5 C) 1 (Typ. T=5 C) 9 QUANTUM EFFICIENCY (%) UV COAT TRANSMITTANCE (%) SAPPHIRE WINDOW QUARTZ WINDOW WAVELENGTH (nm) WAVELENGTH (nm) KMPDB44EB KMPDB11EA 3

4 V... CCD re imge sensor S997/S9971 series Device structure, line output formt IG1V IGV ISV SS TG P1V PV 14 V=6, 14, 5 H=51, H 1 RD D1 D D3 D4 D5 D6 D7 D8 D9 D1... D11 D1 D13 D14 D15 D16 D17 D18 D19 D 13 ISH 3 1 IG1H OD OG SG 4 BLANK 4 OPTICAL BLACK ISOLATION 51 or ISOLATION PH P1H IGH 14 SIGNAL OUT 4 OPTICAL BLACK 4 BLANK KMPDC15EB Pixel formt Left Horizontl Direction Right Blnk Opticl Blck Isoltion Effective Isoltion Opticl Blck Blnk or Top Verticl Direction Bottom Isoltion Effective Isoltion 6, 14 or 5 Timing chrt INTEGRATION PERIOD (Shutter must e open) P1V Tpwv VERTICAL BINNING PERIOD (Shutter must e closed) Tovr Line inning READOUT PERIOD (Shutter must e closed) (ISOLATION): S997/1-96/ (ISOLATION): S997/ (ISOLATION): S997/1-18 PV, TG P1H Tpwh, Tpws : S997/ : S997/1-16/-17/-18 PH, SG Tpwr D1 D S1..S51 D19 D3..D1, S1..S14, D11..D18 D: S997/1-96 : S997/1-16/-17/-18 KMPDC7EA 4

5 CCD re imge sensor S997/S9971 series Are scnning 1: low drk current mode INTEGRATION PERIOD (Shutter must e open) P1V Tpwv READOUT PERIOD (Shutter must e closed) (ISOLATION): S997/1-96/ (ISOLATION): S997/ (ISOLATION): S997/ PV, TG P1H PH, SG PV, TG P1H Tovr Tpwh, Tpws ENLAED VIEW PH, SG Tpwr D1 D D3 D4 S1..S51 D18 D19 D: S997/1-96 D5..D1, S1..S14, D11..D17 : S997/1-16/-17/-18 KMPDC8EA Are scnning : lrge full well mode INTEGRATION PERIOD (Shutter must e open) P1V Tpwv READOUT PERIOD (Shutter must e closed) (ISOLATION): S997/1-96/ (ISOLATION): S997/ (ISOLATION): S997/1-18 PV, TG P1H PH, SG PV, TG P1H Tovr Tpwh, Tpws ENLAED VIEW PH, SG Tpwr D1 D D3 D4 S1..S51 D18 D19 D: S997/1-96 D5..D1, S1..S14, D11..D17 : S997/1-16/-17/-18 KMPDC9EA Prmeter Symol Remrk Min. Typ. Mx. Unit S997/S S997/S Pulse width Tpwv * P1V, PV, TG S997/S µs S997/S Rise nd fll time Tprv, Tpfv ns Pulse width Tpwh ns P1H, PH Rise nd fll time Tprh, Tpfh * ns Duty rtio % Pulse width Tpws * ns SG Rise nd fll time Tprs, Tpfs ns Duty rtio % Pulse width Tpwr ns - Rise nd fll time Tprr, Tpfr ns TG - P1H Overlp time Tovr µs *13: The clock pulses should e overlpped t 5 % of clock pulse mplitude. *14: PH nd SG should hve the sme electricl specifictions. 5

6 CCD re imge sensor S997/S9971 series Dimensionl outlines (unit: mm) S PHOTENSITIVE SURFACE 1.1 ± ± ±.3 PHOTENSITIVE SURFACE KMPDA193EA S997-16/-17 PHOTENSITIVE SURFACE 1.1 ±.3 PHOTENSITIVE SURFACE 1.1 ± ± ± ±.41 PHOTENSITIVE SURFACE KMPDA194EA S ±.41 PHOTENSITIVE SURFACE Type No. Active re S (H) 1.44 (V) S (H) 1.44 (V) S (H).976 (V) S (H) 6.48 (V) 7.94 KMPDA195EA 6

7 CCD re imge sensor S997/S9971 series S ±.4 3. ± ± ±.5 c ±.5 c 5. PHOTENSITIVE SURFACE TE-COOLER ± KMPDA196EA S / ± TE-COOLER WINDOW 8.6 ACTIVE AREA PHOTENSITIVE SURFACE S ±.5 Type No. Active re c S (H) 1.44 (V) 7.5 S (H) 1.44 (V) 7.5 S (H).976 (V) 7.1 KMPDA197EA PHOTENSITIVE SURFACE TE-COOLER (4 ).5 KMPDA198EA 7

8 CCD re imge sensor S997/S9971 series Pin connections Pin No. S997 series S9971 series Symol Description Symol Description Remrk 1 Reset gte Reset gte RD Reset drin RD Reset drin 3 Output trnsistor source Output trnsistor source 4 OD Output trnsistor drin OD Output trnsistor drin 5 OG Output gte OG Output gte 6 SG Summing gte SG Summing gte Sme timing s PH 7 NC Th1 Thermistor 8 NC Th Thermistor 9 PH CCD horizontl register clock- PH CCD horizontl register clock- 1 P1H CCD horizontl register clock-1 P1H CCD horizontl register clock-1 11 IGH Test point (horizontl input gte-) IGH Test point (horizontl input gte-) Shorted to GND 1 IG1H Test point (horizontl input gte-1) IG1H Test point (horizontl input gte-1) Shorted to GND 13 ISH Test point (horizontl input source) ISH Test point (horizontl input source) Shorted to RD 14 PV CCD verticl register clock- PV CCD verticl register clock- 15 P1V CCD verticl register clock-1 P1V CCD verticl register clock-1 16 TG * 15 Trnsfer gte TG * 15 Trnsfer gte Sme timing s PV 17 NC NC 18 NC P- TE-cooler- 19 NC P+ TE-cooler+ SS Sustrte (GND) SS Sustrte (GND) 1 NC NC ISV Test point (verticl input source) ISV Test point (verticl input source) Shorted to RD 3 IGV Test point (verticl input gte-) IGV Test point (verticl input gte-) Shorted to GND 4 IG1V Test point (verticl input gte-1) IG1V Test point (verticl input gte-1) Shorted to GND *15: TG is n isoltion gte etween verticl register nd horizontl register. In stndrd opertion, the sme pulse s PV should e pplied to TG. Specifictions of uilt-in TE-cooler (Typ.) Prmeter Symol Condition S S /-17 S Unit Internl resistnce Rint T=5 C Ω Mximum current * 16 Imx Tc * 17 =Th * 18 =5 C A Mximum voltge Vmx Tc * 17 =Th * 18 =5 C V Mximum het sorption * 19 Qmx W Mximum temperture of hot side - 7 C *16: Mximum current Imx: If the current is greter thn Imx, the het sorption egins to decrese due to the Joule het. It should e noted tht this vlue is not dmge threshold. To protect the thermoelectric cooler nd mintin stle opertion, the supply current should e less thn 6 % of this mximum current. *17: Temperture of cool side of thermoelectric cooler *18: Temperture of hot side of thermoelectric cooler *19: Mximum het sorption Qmx This is het sorption when the mximum current is supplied to the TE-cooler. 8

9 CCD re imge sensor S997/S9971 series TE-cooler chrcteristics S S /-17 5 (Typ. T=5 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT 1 (Typ. T=5 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT VOLTAGE (V) CCD TEMPERATURE ( C) VOLTAGE (V) CCD TEMPERATURE ( C) CURRENT (A) CURRENT (A) KMPDB176EB KMPDB177EB S VOLTAGE vs. CURRENT (Typ. T=5 C) 3 6 CCD TEMPERATURE vs. CURRENT VOLTAGE (V) CCD TEMPERATURE ( C) CURRENT (A) KMPDB179EB 9

10 CCD re imge sensor S997/S9971 series Specifictions of uilt-in temperture sensor A chip thermistor is uilt in the sme pckge with CCD chip, nd the CCD chip temperture cn e monitored with it. A reltion etween the thermistor resistnce nd solute temperture is expressed y the following eqution. R1 = R expb (1 / T1-1 / T) where R1 is the resistnce t solute temperture T1 (K) R is the resistnce t solute temperture T (K) B is so-clled the B constnt (K) The chrcteristics of the thermistor used re s follows. R (98K) = 1 kω B (98K / 33K) = 345 K RESISTANCE 1 MΩ 1 kω 1 kω TEMPERATURE (K) KMPDB111EB Precution for use (Electrosttic countermesures) Hndle these sensors with re hnds or wering cotton gloves. In ddition, wer nti-sttic clothing or use wrist strp, in order to prevent electrosttic dmge due to electricl chrges from friction. Avoid directly plcing these sensors on work-desk or work-ench tht my crry n electrosttic chrge. Provide ground lines or ground connection with the work-floor, work-desk nd work-ench to llow sttic electricity to dischrge. Ground the tools used to hndle these sensors, such s tweezers nd soldering irons. It is not lwys necessry to provide ll the electrosttic mesures stted ove. Implement these mesures ccording to the mount of dmge tht occurs. Element cooling/heting temperture incline rte When cooling the CCD y n externlly ttched cooler, set the cooler opertion so tht the temperture grdient (rte of temperture chnge) for cooling or llowing the CCD to wrm ck is less thn 5 K/minute. Multichnnel detector hed (C7, C71, C75) Informtion furnished y HAMAMATSU is elieved to e relile. However, no responsiility is ssumed for possile inccurcies or omissions. Specifictions re suject to chnge without notice. No ptent rights re grnted to ny of the circuits descried herein. 7 Hmmtsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid Stte Division Ichino-cho, Hmmtsu City, Jpn, Telephone: (81) , Fx: (81) , U.S.A.: Hmmtsu Corportion: 36 Foothill Rod, P.O.Box 691, Bridgewter, N.J , U.S.A., Telephone: (1) , Fx: (1) Germny: Hmmtsu Photonics Deutschlnd GmH: Arzergerstr. 1, D-811 Herrsching m Ammersee, Germny, Telephone: (49) , Fx: (49) Frnce: Hmmtsu Photonics Frnce S.A.R.L.: 8, Rue du Sule Trpu, Prc du Moulin de Mssy, 9188 Mssy Cedex, Frnce, Telephone: 33-(1) , Fx: 33-(1) United Kingdom: Hmmtsu Photonics UK Limited: Howrd Court, 1 Tewin Rod, Welwyn Grden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) , Fx: (44) North Europe: Hmmtsu Photonics Norden AB: Smidesvägen 1, SE Soln, Sweden, Telephone: (46) , Fx: (46) Itly: Hmmtsu Photonics Itli S.R.L.: Strd dell Moi, 1/E, Arese, (Milno), Itly, Telephone: (39) , Fx: (39) Ct. No. KMPD189E6 Fe. 7 DN 1 Fetures l C7: for S997 series C71: for S /-16/-17 C75: for S l Are scnning or full line-innng opertion l Redout frequency: 5 khz l Redout noise: e - rms l T=5 C ( T chnges y rdition method.) Supply voltge Input Symol Vlue VD1 VA1+ VA1- VA VD Vp VF +5 Vdc, ma +15 Vdc, +1 ma -15 Vdc, -1 ma +4 Vdc, 3 ma +5 Vdc, 3 ma (C71, C75) +5 Vdc,.5 A (C71, C75) +1 Vdc, 1 ma (C71, C75) Mster strt φms HCM logic comptile Mster clock φmc HCM logic comptile, 1 MHz