InGaAs PIN photodiodes
|
|
- Job Neal
- 5 years ago
- Views:
Transcription
1 Long wavelength type (cutoff wavelength: 2.55 to 2.6 μm) Features Cutoff wavelength: 2.55 to 2.6 μm Low cost Photosensitive area: φ0.3 to φ3 mm Low noise High sensitivity High reliability High-speed response Applications Optical power meters Gas analyzers Moisture meters NIR (near infrared) photometry Options Amplifier for InGaAs PIN photodiode C Heatsink for one-stage A3179 Heatsink for two-stage A Temperature controller for C Structure Type no. Dimensional outline Photosensitive area /Window material* 1 Package Cooling (mm) φ0.3 G K (1)/B TO-18 φ0.5 G K Non-cooled φ1 G K φ2 (2)/B TO-5 G K φ3 φ0.3 G K φ0.5 One-stage G K (3)/B TO-8 φ1 TE-cooled G K φ2 G K φ3 φ0.3 G K φ0.5 Two-stage G K (4)/B TO-8 φ1 TE-cooled G K φ2 G K φ3 *1: B=Borosilicate glass 1
2 Absolute maximum ratings Type no. Thermister power dissipation Pd_th TE-cooler allowable current ITE max TE-cooler allowable voltage VTE max Reverse voltage VR max Operating temperature Topr Storage temperature Tstg Soldering conditions (mw) (A) (V) (V) ( C) ( C) G K G K G K G K to +85* 2-55 to +125* 2 G K 260 C or less, G K within 10 s G K G K to +70* 2-55 to +85* 2 G K G K G K G K Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *2: No dew condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. The may be destroyed or deteriorated by electrostatic discharge, etc. Be carefull when using the. Electrical and optical characteristics (, unless otherwise noted) Type no. Measurement Condition Element temperature Tchip ( C) Thermistor resistance Rth Thermistor B constant B Spectral response range λ (μm) Peak sensitivity wavelength λp Photo sensitivity S λ=λp Dark current ID VR=0.5 V Min. Max. (kω) (K) (μm) (A/W) (A/W) (μa) (μa) G K 1 10 G K to G K G K G K G K to G K 3 30 G K G K G K to G K G K 6 60 Temp. coefficient of ID VR=0.5 V (times/ C)
3 Measurement Cutoff frequency Terminal capacitance Shunt resistance Detectivity Noize equivalent power Condition fc Ct Rsh D VR=0 V VR=0 V NEP Element Type no. VR=10 mv λ=λp λ=λp temperature RL=50 Ω f=1 MHz Tchip ( C) Min. (MHz) (MHz) (pf) Max. (pf) Min. (kω) (kω) Min. (cm Hz 1/2 /W) (cm Hz 1/2 /W) (W/Hz 1/2 ) Max. (W/Hz 1/2 ) G K G K G K G K G K G K G K G K G K G K G K G K Spectral response Td=25 C Td=-10 C Td=-20 C ( VR=0 V) Spectral transmittance of window material 100 ( Ta=25 C) Photosensitivity (A/W) Transmittance (%) Wavelength (μm) Wavelength (μm) KIRDB0491EC KIRDB0639EA 3
4 Temperature coefficient of sensitivity (%/ C) Photosensitivity temperature characteristics ( VR=0 V) Relative sensitivity (%) Linearity (G K) ( Ta=25 C, λ=1.55 μm, RL=2 Ω, VR=0 V) Wavelength (μm) Incident light level (mw) KIRDB0642EA KIRDB0539EA Dark current vs. reverse voltage Non-cooled type 100 μa ( Ta=25 C) 100 μa () G K (Td=-10 C) G K G K (Td=-20 C) 10 μa G K 10 μa G K (Td=-10 C) Dark current 1 μa 100 na G K G K Dark current 1 μa 100 na G K (Td=-20 C) G K (Td=-10 C) G K (Td=-20 C) G K (Td=-10 C) G K (Td=-20 C) (Td=-10 C) (Td=-20 C) 10 na na Reverse voltage (V) KIRDB0492EA Reverse voltage (V) KIRDB0531EA 4
5 Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature 10 nf ( Ta=25 C, f=1 MHz) G K/-130K/-230K 10 MΩ 1 MΩ /-103K/-203K G K/-105K/-205K ( VR=10 mv) Terminal capacitance 1 nf G K/-120K/-220K G K/-110K/-210K 100 pf G K/-105K/-205K 10 pf /-103K/-203K Revers voltage(v) KIRDB0493EB Shunt resistance G K/-110K/-210K 100 kω 10 kω 1 kω G K/-120K/-220K 100 Ω G K/-130K/-230K 10 Ω Element temperature ( C) KIRDB0494EB The operating temperature for one-stage and two-stage s is up to 70 C. Thermistor temperature characteristics Cooling characteristics of TE-cooler 10 6 () 40 ( Ta=25 C, Thermal resistance of heatsink=3 C/W) 20 Resistance (Ω) Element temperature ( C) Two-stage One-stage Element temperature ( C) Current (A) KIRDB0116EA KIRDB0231EA 5
6 Current vs. voltage (TE-cooler) 1.6 ( Ta=25 C, Thermal resistance of heatsink=3 C/W) One-stage Current (A) Two-stage Voltage (V) KIRDB0115EB Dimensional outlines (unit: mm) (1) /-005K/-010K (2) G K/-030K 5.4 ± ± ± ± max. Window 3.0 ± ± ± max. Window 5.9 ± ± ± 0.2 Photosensitive surface 0.45 Lead 13 min. Photosensitive surface 0.45 Lead 0.4 max. 18 min ± ± max. Case Case Distance from photosensitive area center to cap center -0.2 X Y +0.2 KIRDA0220EA Distance from photosensitive area center to cap center -0.2 X Y +0.2 KIRDA0221EA 6
7 (3) /-105K/-110K/-120K/-130K (4) /-205K/-210K/-220K/-230K 15.3 ± ± max. 14 ± 0.2 Window 10 ± ± max. 14 ± 0.2 Window 10 ± 0.2 Photosensitive surfacae 0.45 Lead 10.2 ± 0.2 A 12 min. Photosensitive surfacae 0.45 Lead A 10 ± min ± 0.2 A Detector (anode) Detector (cathode) TE-cooler (-) Te-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3 X Y +0.3 /-105K/110K 4.3 ± 0.2 G K /-130K 4.4 ± 0.2 Detector (anode) Detector (cathode) TE-cooler (-) Te-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3 X Y +0.3 /-205K/-210K G K /-230K KIRDA0228EA A 6.6 ± ± 0.2 KIRDA0229EA 7
8 Related information Precautions Disclaimer Safety consideration Metal, ceramic, plastic package products Technical information Infrared detectors Information described in this material is current as of October Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid State Division Ichino-cho, Higashi-ku, Hamamatsu City, Japan, Telephone: (81) , Fax: (81) U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J , U.S.A., Telephone: (1) , Fax: (1) , Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D Herrsching am Ammersee, Germany, Telephone: (49) , Fax: (49) , France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, Massy Cedex, France, Telephone: 33-(1) , Fax: 33-(1) , United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) , Fax: (44) , info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan Kista, Sweden, Telephone: (46) , Fax: (46) , info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, Arese (Milano), Italy, Telephone: (39) , Fax: (39) , info@hamamatsu.it China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing , China, Telephone: (86) , Fax: (86) , hpc@hamamatsu.com.cn Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886) , Fax: (886) , info@tw.hpk.co.jp Cat. No. KIRD1119E04 Oct DN 8
InGaAs PIN photodiodes
Long wavelength type (cutoff wavelength: 2.05 to 2.1 μm) Features Cutoff wavelength: 2.05 to 2.1 μm Low cost Photosensitive area: φ0.3 to φ3 mm Low noise High sensitivity High reliability High-speed response
More informationInGaAs PIN photodiodes
area from ϕ0.3 mm to ϕ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm
More informationInGaAs PIN photodiodes
area from ϕ0.3 mm to ϕ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm
More informationInAs photovoltaic detectors
P9 series P763 Low noise, high reliability infrared detectors (for 3 µm band) InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors,
More informationInAs photovoltaic detectors
P9 series P763 Low noise, high reliability infrared detectors (for 3 μm band) InAs photovoltaic detectors have high sensitivity in the infrared region around 3 μm as with PbS photoconductive detectors,
More informationCompact SMD type high output LED
Compact SMD type high output LED The is a small-size LED available in a surface mount COB package. Its size is drastically reduced compared to the previous premolded type. Features Applications High output
More informationHigh power LED, peak emission wavelength: 1.45 µm
High power LED, peak emission wavelength:.45 µm The is a high-power LED that emits infrared light at a peak of.45 µm. A bullet-shaped package () and a surface mount type () are available. It offers high
More informationPhoto IC diode. Wide operating temperature: -40 to +105 C. S MT. Absolute maximum ratings
Wide operating temperature: -40 to +05 C The photo IC has a spectral response close to human eye sensitivity. Two active areas are made on a single chip. Almost only the visible range can be measured by
More informationEnergy saving sensors for TV brightness controls, etc.
S7184 Linear current amplification of photodiode output The and S7184 consist of a photodiode and a signal processing circuit for amplifying the photocurrent generated from the photodiode up to 1300 times.
More informationMEMS-FPI spectrum sensor
Ultra-compact near infrared spectrum sensor that integrates MEMS tunable filter and photosensor The MEMS-FPI spectrum sensor is a ultra-compact sensor that houses a MEMS-FPI (Fabry-Perot Interferometer)
More informationSi photodiodes with preamp
Si photodiodes with preamp Photodiode and preamp integrated with feedback resistance and capacitance The and are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance,
More informationPhoto IC diodes S SB S CT. Spectral response close to human eye sensitivity. Absolute maximum ratings (Ta=25 C)
Photo IC diodes S9066-211SB S9067-201CT Spectral response close to human eye sensitivity The S9066-211SB, S9067-201CT photo ICs have spectral response close to human eye sensitivity. Two photosensitive
More informationSi photodiodes with preamp
Si photodiodes with preamp Photodiode and preamp integrated with feedback resistance and capacitance The and are low-noise sensors consisting of Si photodiode, op amp, and feedback resistance and capacitance,
More informationRadiation detection modules
C7 series High accuracy, high sensitivity, compact radiation detection module The C7 series is a radiation detection module containing a scintillator and MPPC (multi-pixel photon counter) designed to detect
More information01 12-bit digital output
12-bit digital output The is a digital color sensor sensitive to red (λ=615 nm), green (λ=540 nm) and blue (λ=465 nm) regions of the spectrum. Detected signals are serially output as 12-bit digital data.
More informationCMOS linear image sensors
CMOS linear image sensors S12198 series (-01) Smoothly varying spectral response characteristics in UV region The S12198 series are CMOS linear image sensors using a vertically long pixels (25 500 µm).
More informationCMOS linear image sensor
RGB color image sensor The is a CMOS linear image sensor that is sensitive to red (630 nm), green (540 nm), and blue (460 nm). Filters are attached to the pixels in the following order: R, G, and B. Features
More informationCMOS linear image sensor
Achieves high sensitivity by adding an amplifier to each pixel The is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long photosensitive area (effective
More informationMini-spectrometers. TM series. High sensitivity type (integrated with backthinned type CCD image sensor) C10082CA/C10083CA series
C12CA/C13CA series High sensitivity type (integrated with backthinned type CCD ) mini-spectrometers are polychromators integrated with optical elements, an and a driver circuit. Light to be measured is
More informationCMOS linear image sensor
CMOS linear image sensor S11639-01 High sensitivity, photosensitive area with vertically long pixels The S11639-01 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically
More information5 W XENON FLASH LAMP MODULES
LAMP W XENON FLASH LAMP MODULES : L/L series (side-on type) : L/L series (head-on type) : L/L series (high output type) : L (SMA fiber adapter type) : L/L series (high precision type) : L/L series (silent
More informationCMOS linear image sensors
CMOS linear image sensors S10121 to S10124 series (-01) Higher UV sensitivity than previous type, current-output type sensors with variable integration time function The S10121 to S10124 series are self-scanning
More informationLCOS-SLM (Liquid Crystal on Silicon - Spatial Light Modulator)
POWER LCOS-SLM CONTROLLER RESET POWER OUTPUT ERROR LCOS-SLM (Liquid Crystal on Silicon - Spatial Light Modulator) Control your light! Shape your beam! Improve your image! The devices are a reflective type
More informationApplications S S S S 1024
IMAGE SENSOR NMOS linear image sensor S9/S9 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed
More informationXENON FLASH LAMP MODULES
LAMP COMPACT W MODULES : L/L series (side-on type) : L/L series (head-on type) : L/L series (high output type) : L (SMA fiber adapter type) : L/L series (high precision type) : L/L series (silent type)
More informationPhotosensor with front-end IC
Near infrared sensor that integrates an InGas photodiode and front-end IC The is a compact optical device that integrates an InGas photodiode and front-end IC. Signal from a photodiode that receives near
More informationPhotodiode arrays with amplifiers
Photodiode arrays with amplifiers S3885 series Photodiode arrays combined with signal processing IC for X-ray detection The S3885 series are photodiode arrays with amplifiers having a phosphor sheet attached
More informationCCD linear image sensor
CCD linear image sensor S11151-2048 High sensitivity in the ultraviolet region, front-illuminated CCD Despite a front-illuminated CCD, the S11151-2048 offers high sensitivity in the ultraviolet region
More informationEnhanced near infrared sensitivity: QE=40% (λ=1000 nm)
IR-enhanced CCD image sensors Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) The is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared
More informationCMOS linear image sensors
Built-in electronic shutter function and gain switching function The is a CMOS linear image sensor with electronic shutter function and gain switching function. The has a pixel pitch that is one-half that
More informationPhotodiode arrays with ampli er
Photodiode array combined with signal processing IC The S8866-64 and S8866-128 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process
More informationPhotodiode arrays with amplifiers
S865-64/-8/-56 S866-64-0/-8-0 Photodiode arrays combined with signal processing IC These are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS
More informationPhotodiode arrays with amplifiers
S865-64/-28/-256 S866-64-02/-28-02 Photodiode arrays combined with signal processing IC The S865/S866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been
More informationPHOTOMULTIPLIER TUBE MODULES, NEW RELEASED PAMPHLET
PHOTOMULTIPLIER TUBE MODULES, NEW RELEASED PAMPHLET This pamphlet is gathered up the new released products from January 9. Photomultiplier tube (PMT) module functions are shown in the chart below. PMT
More informationNear infrared/proximity type sensor
Reflective sensor with InGas photodiode and infrared housed in a compact package This reflective sensor houses an InGas PIN photodiode and 1.45 μm band in a compact package. The irradiates infrared light
More informationCCD linear image sensor
CCD linear image sensor S11151-2048 High sensitivity in the ultraviolet region, front-illuminated CCD Despite a front-illuminated CCD, the S11151-2048 offers high sensitivity in the ultraviolet region
More informationPhotodiode arrays with amplifiers
S865-64G/-8G/-56G S866-64G-0/-8G-0 Photodiode arrays combined with signal processing IC for X-ray detection These are photodiode arrays with an amplifier and a phosphor sheet attached to the photosensitive
More informationCCD image sensors. Improved etaloning characteristics, High-speed type and low noise type available. S11071/S series
Improved etaloning characteristics, High-speed type and low noise type available The are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a high-speed type (S11071 series)
More informationPhotodiode arrays with amplifier
/-28/-256 S8866-64-02/-28-02 Photodiode array combined with signal processing IC The /-28/-256 and S8866-64-02/-28-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing
More informationDigital Cameras for Microscopy
Digital Cameras for Microscopy Fast frame rate and high sensitivity EM-CCD (Electron multiplication CCD) cameras High dynamic range Enhanced Ideal format for short exposures, fast frame rate and high dynamic
More informationPMA-12. Photonic multichannel analyzer. Scientific applications. Industrial applications. UV to visible spectroscopy. Fluorescence spectroscopy
Photonic multichannel analyzer Scientific applications UV to visible spectroscopy Fluorescence spectroscopy Raman scattering Chemiluminescence analysis Liquid chromatography Gas chromatography ICP emission
More informationApplications. active pixels [mm (H) mm(v)] S9979 Non-cooled
IMAGE SENSOR CCD area image sensor S9979 TDI operation / large active area CCD S9979 is a FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular,
More informationCCD area image sensor
IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% (λ=1000 nm), back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers
More informationCCD image sensors. Improved etaloning characteristics, High-speed type and low noise type available. S11071/S series
Improved etaloning characteristics, High-speed type and low noise type available The are back-thinned CCD image sensors designed for spectrometers. Two types consisting of a high-speed type (S11071 series)
More informationTDI-CCD area image sensor
S8658-01/01F Image sensor with a long, narrow photosensitive area for X-ray imaging The S8658-01 is an front-illuminated FFT-CCD image sensor developed for X-ray imaging. A F (Fiber Optic plate with Scintillator)
More informationCMOS linear image sensor
S3774 High-speed readout (00 klines/s) The S3774 is a CMOS linear image sensor developed for industrial cameras that require high-speed scanning. The columnparallel readout system, which has a readout
More informationTECHNICAL INFORMATION. How to Use UVTRON
TECHNICAL INFORMATION How to Use The is a sensor sensitive only to ultraviolet light with wavelengths shorter than 26 nm. Featuring high sensitivity high output, and high-speed response, the is the ideal
More informationMIRROR QE=0.1 % MIRROR
MICROCHANNEL PLATE- PHOTOMULTIPLIER TUBES (MCP-PMT) SERIES FEATURES High Speed Rise Time: 160 ps IRF (Instrument Response Function) A : 55 ps (FWHM) Low Noise Compact Profile Useful Photocathode: 11 mm
More informationQuantum Cascade Laser
Quantum Cascade Laser Front: QCLs Back: Set-up examples with exclusive accessories Quantum Cascade Lasers are semiconductor lasers that offer peak emission in the mid-ir range (4 µm to 10 µm). They have
More informationCCD image sensors. Enhanced near infrared sensitivity, Constant element temperature control. S11511 series. Applications.
Enhanced near infrared sensitivity, Constant element temperature control The is a family of FFT (full frame transfer)-ccd image sensors for photometric applications that offer improved sensitivity in the
More informationGATED MICROCHANNEL PLATE PHOTOMULTIPLIER TUBES (MCP-PMT) R5916U-50 SERIES
PHOTOMULTIPLIER TUBES (MCP-PMT) SERIES FEATURES High Speed Gating by Low Supply Voltage (+10 V) Gate Rise Time : 1 ns A Gate Width : 3 ns Fast Rise Time : 180 ps Narrow T.T.S. B : 90 ps High Switching
More informationInput aperture size (mm) Supply voltage Features Conversion dynode ± 1.
PRODUCT LINE-UP Electron multipliers are mainly used as positive/negative ion detectors. They are also useful for detecting and measuring vacuum UV rays and soft X-rays. Hamamatsu electron multipliers
More informationApplications. General ratings Parameter S S S
IMAGE SENSOR CCD area image sensor S9736 series 52 52 pixels, front-illuminated FFT-CCDs S9736 series is a family of FFT-CCD area image sensors specifically designed for low-light-level detection in scientific
More informationCCD area image sensors
CCD area image sensors S814 S811-11 Front-illuminated FFT-CCD for X-ray imaging The S814 is an FFT-CCD image sensor suitable for intra-oral X-ray imaging in dental diagnosis. The S814 has about 2 mega
More informationCCD image sensor. High-speed operation, back-thinned FFT-CCD. S9037/S9038 series. Structure
High-speed operation, back-thinned FFT-CCD The FFT-CCD image sensors were developed for high-speed line scan cameras. Since an on-chip amplifier having a wide bandwidth is used to an image sensor, a pixel
More informationCCD area image sensor
High sensitivity in U region, anti-blooming function included The CCD area image sensor has a back-thinned structure that enables a high sensitivity in the U to visible region as well as a wide dynamic
More informationApplications KMPDC0019EA. S3923 series: a=25 µm, b=20 µm Absolute maximum ratings Parameter Symbol Value
IMAGE SENSOR NMOS linear image sensor S39/S393 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode
More informationCCD area image sensors
S7170-0909 S7171-0909-01 512 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP (multi-pinned phase) mode back-thinned FFT-CCDs specifically designed for low-light-level detection in scientific applications.
More informationApplications. Number of total pixels. Number of active pixels
IMAGE SENSOR CCD area image sensor S7/S7 series Back-thinned FFT-CCD S7/S7 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By
More informationCCD linear image sensors
S55-048-0 S56-048-0 Back-thinned CCD image sensors with electronic shutter function The S55-048-0 and S56-048-0 are back-thinned CCD linear image sensors with an internal electronic shutter for spectrometers.
More informationCCD linear image sensors
S13255-2048-02 S13256-2048-02 Back-thinned CCD image sensors with electronic shutter function The S13255-2048-02 and S13256-2048-02 are back-thinned CCD linear image sensors with an internal electronic
More informationStandard InGaAs Photodiodes IG17-Series
Description The IG17-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 1.7 µm. This series has been designed for demanding spectroscopic and radiometric applications. It offers
More informationS3922/S3923 series. NMOS linear image sensor. Voltage output type with current-integration readout circuit and impedance conversion circuit.
IMAGE SENSOR NMOS linear image sensor S39/S393 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode
More informationTechnical note EM-CCD CAMERA. 1. Introduction
EM-CCD CAMERA Technical note 1. Introduction 2. Technologies of cooled CCD cameras 2.1 Hermetic vacuum-sealed chamber 2.2 Advantages of an Interline Transfer CCD (ER-150 CCD) 2.3 Readout noise 2.4 Dark
More informationTDI-CCD image sensors
S10201-04-01 S10202-08-01 S10202-16-01 Operating the back-thinned CCD in TDI mode delivers high sensitivity. TDI-CCD image sensers capture clear and bright images even under low-light-level conditions.
More informationExtended InGaAs Photodiodes IG22-Series
Description The IG22-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 2.2 µm. This series has been designed for demanding spectroscopic and radiometric applications. It offers
More informationWide range of applications from Real time imaging of low light fluorescence to Ultra low light detection
Electron Multiplier CCD Camera C100-13, -14 Wide range of applications from Real time imaging of low light fluorescence to Ultra low light detection Great Stability High Sensitivity Low Noise High Resolution
More informationElectron Multiplying CCD Camera. series
Electron Multiplying CCD Camera series Multiply faster R The ImagEM X2 is an extremely versatile camera that quietly delivers 70 frames/s at full frame and up to 1076 frames/s with analog binning and regions
More informationMultiply faster R. 70 frames/s frames/s. Electron Multiplying CCD Camera
Electron Multiplying CCD Camera Multiply faster R The ImagEM X2 is an extremely versatile camera that quietly delivers 70 frames/s at full frame and up to 1076 frames/s with analog binning and regions
More informationPhoto IC for optical link
S11355-03 P11379-04AT Transmitter photo IC Receiver photo IC S11355-03 Transmitter/ receiver photo IC P11379-04AT For 150 Mbps optical link These photo ICs is capable of data communication at a transmission
More informationPSD (POSITION SENSITIVE DETECTOR)
查询 S1200 供应商 SOLID STATE DIVISION PSD (POSITION SENSITIVE DETECTOR) What is PSD? Various methods are available for detecting the position of incident light. These include methods using small discrete detector
More informationCCD area image sensor
Back-thinned FFT-CCD The is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the can be used as a linear
More informationCCD area image sensor
Low readout noise, high resolution (pixel size: 12 μm) The is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the
More informationNear-Infrared (NIR) Photodiode
Photosensitivity, A/W Capacitance, pf Photosensitivity, A/W Current, ma Near-Infrared (NIR) Photodiode Lms25PD-10 series Device parameters Symbol Value Units Sensitive area diameter Reverse voltage V r
More informationImaging Software Optimized for Image Acquisition and Analysis
Imaging Software Optimized for Image Acquisition and Analysis HCImage is designed to solve a wide range of imaging applications. It includes an extensive range of image processing tools that can be used
More informationCMOS linear image sensor
High-speed readout (00 klines/s) The is a CMOS linear image sensor developed for industrial cameras that require high-speed scanning. The columnparallel readout system, which has a readout amplifier and
More informationQuantum Cascade Laser
Quantum Cascade Laser Front: QCLs Back: Set-up examples with exclusive accessories Quantum Cascade Lasers are semiconductor lasers that offer peak emission in the mid-ir range (4 µm to 10 µm). They have
More informationBPW41N. Silicon PIN Photodiode. Vishay Semiconductors
Silicon PIN Photodiode Description BPW4N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs
More informationBPV23NF(L) Silicon PIN Photodiode. Vishay Semiconductors
Silicon PIN Photodiode Description BPV23NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally
More informationLINEAR IRRADIATION TYPE UV-LED UNIT. Concentration of optical technology
LINEAR IRRADIATION TYPE U-LED UNIT Concentration of optical tecnology LINEAR IRRADIATION TYPE U-LED UNIT Offering U-LED ligt sources wit a cluster of potonics tecnology Te LC-L5G U-LED ligt sources ave
More informationMid-Infrared (MIR) Photodiode
Photosensitivity, A/W Photosensitivity, A/W Current, ma Mid-Infrared (MIR) Photodiode Lms41PD-3 series Device parameters Symbol Value Units Sensitive area size Reverse voltage Operating/ storage temperature
More informationNear-Infrared (NIR) Photodiode
Photosensitivity, A/W Photosensitivity, A/W Current, ma Near-Infrared (NIR) Photodiode Lms24PD-03 series Device parameters Symbol Value Units Sensitive area size Reverse voltage Operating/ storage temperature
More informationNIR PHOTOMULTIPLIER TUBES AND THEIR APPLICATIONS
NIR PHOTOMULTIPLIER TUBES AND THEIR APPLICATIONS NIR PMTs (near-infrared photomultiplier tubes) are photodetectors that provide high-speed response and high sensitivity in the near infrared region. These
More informationBPW41N. Silicon PIN Photodiode. Vishay Semiconductors
Silicon PIN Photodiode Description BPW4N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs
More informationBPV10NF. High Speed Silicon PIN Photodiode. Vishay Semiconductors
BPVNF High Speed Silicon PIN Photodiode Description BPVNF is a high sensitive and wide bandwidth PIN photodiode in a standard T-¾ plastic package. The black epoxy is an universal IR filter, spectrally
More informationMid-Infrared (MIR) Photodiode
Photosensitivity, A/W Capacitance, pf Photosensitivity, A/W Current, ma Mid-Infrared (MIR) Photodiode Lms36PD-03 series Device parameters Symbol Value Units Sensitive area size Reverse voltage Operating/
More informationBPW46L. Silicon PIN Photodiode. Vishay Semiconductors
Silicon PIN Photodiode Description BPW46L is a high speed and high sensitive PIN photodiode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and infrared
More informationP-CUBE-Series High Sensitivity PIN Detector Modules
High Sensitivity PIN Detector Modules Description The P-CUBE-series manufactured by LASER COMPONENTS has been designed for customers interested in experimenting with low noise silicon or InGaAs pin detectors.
More informationSilicon PIN Photodiode, RoHS Compliant
DESCRIPTION 640- is a PIN photodiode with high speed and high radiant sensitivity in black, T-¾ plastic package with daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters.
More informationOptical NanoGauge / Optical MicroGauge
Optical Gauge Series Optical NanoGauge / Optical MicroGauge Optical NanoGauge Optical MicroGauge NEW C156 P6 C10178 P10 C11665 P18 C11011 P0 Ultrathin film measurement with high speed Extensibility model
More informationFirst Sensor PIN PD Data Sheet Part Description PC5-7 TO Order #
Responsivity () Part Description PC5-7 TO Order # 51285 Features Description Application RoHS 5 mm² PIN detector Low dark current High shunt resistance High sensitivity Fully depleteble Circular active
More informationphotodiodes Description PerkinElmer Optoelectronics offers a broad array of Silicon and InGaAs PIN and APDs.
photodiodes Features Low-cost visible and near-ir photodetector Excellent linearity in output photocurrent over 7 to 9 decades of light intensity Fast response times Available in a wide range of packages
More informationPRELIMINARY. Specifications are at array temperature of -30 C and package ambient temperature of 23 C All values are typical
DAPD NIR 5x5 Array+PCB 1550 Series: Discrete Amplification Photon Detector Array Including Pre-Amplifier Board The DAPDNIR 5x5 Array 1550 series takes advantage of the breakthrough Discrete Amplification
More informationBPV22NF(L) Silicon PIN Photodiode. Vishay Semiconductors
Silicon PIN Photodiode Description BPV22NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally
More informationBP104. Silicon PIN Photodiode. Vishay Semiconductors
Silicon PIN Photodiode Description BP4 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO-5
More informationFLD5F6CX-H. 1,550nm MQW-DFB Continous Wave Laser
1,550nm MQWDFB FLD5F6CXH FEATURES Continuous Wave (CW) MQW DFB Laser Builtin TEC, Thermistor and Monitor PD 14Pin Butterfly Type Module 10mW Output Power Selected wavelengths according to ITUT grid available
More information[MILLIMETERS] INCHES DIMENSIONS ARE IN:
Features: Wide acceptance angle, 00 Fast response time Linear response vs Irradiance Plastic leadless chip carrier (PLCC-) Low Capacitance Top Sensing Area Tape and reel packaging Moisture Sensitivity
More informationS186P. Silicon PIN Photodiode. Vishay Semiconductors
S86P Silicon PIN Photodiode Description S86P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs
More informationHOD /BBA HOD /BBA
FEATURES Full duplex over single fiber DC to 160 MHz link bandwidth Link budgets of 2 km [1.24 miles] or greater 40 db isolation Low profile ST housing Other options available VCSEL is Class 1 eye safe
More informationSilicon PIN Photodiode, RoHS Compliant
BPW41N DESCRIPTION 94 8480 BPW41N is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with
More information