Workshop on Compact Modeling

Transcription

1 Workshop on Compact Modeling Chair: Xing Zhou

2 Workshop on Compact Modeling 11 th WCM: 2-day workshop, 15 presentations, 30min/each. Thank you all for your participation! Speakers: please load your slides to the PC (or get your notebook ready) before your talk and inform the session chair of your name Participants: collect your (free) WCM 10 th anniversary CDROM, if you haven t done before Call for volunteer contribution of presentation slides to be posted at the Nanotech website. Look forward to seeing you at the 12 th WCM: Washington D.C., May 12 15,

3 Workshop on Compact Modeling Tuesday June 19 10:30 HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX 11:00 Design Methodology for Ultra Low-Power Analog Circuits using Next Generation BSIM 6 Compact Model 11:30 BSIM6: Symmetric Bulk MOSFET Model 12:00 Lunch 1:00 Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles 1:30 A Simplified Model for Dynamic Depletion in Doped UTB-SOI/DG-FinFETs 2:00 Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back- Gate Control 2:30 Break 3:00 Correlated statistical SPICE models for High-Voltage LDMOS Transistors based on TCAD statistics 3:30 Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow 4:00 Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation 4:30 Unified Regional Approach to High Temperature SOI DC/AC Modeling

4 Workshop on Compact Modeling Wednesday June 20 8:30 Measurement and Characterization of Interconnect Process Parameters for VLSI Design 9:00 i-mos: A Platform for Compact Modeling Sharing 9:30 Critical review of CNTFET compact models 10:00 Break 10:30 Hierarchical Memory Modeling for Reliable Integration 11:00 Leakage current in HfO2 stacks: from physical to compact modeling 11:30 On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling 12:00 Lunch 1:00 Model the AlGaN/GaN High Electron Mobility Transistors 1:30 An analytical 2DEG model considering the two lowest subbands 2:00 Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices 2:30 Break

5 Workshop on Compact Modeling Wednesday June 20 2:45 Modeling of Chain History Effect based on HiSIM-SOI 3:15 Modeling and Analysis of MOS Capacitor Controlled by Independent Double Gates 3:45 Understanding and Modeling Quasi-Static Capacitance-Voltage Characteristics of Organic Thin-Film Transistors 4:15 Break 4:30 Discreteness and Distribution of Drain Currents in FinFETs 5:00 A Fully Automated Method to Create Monte-Carlo MOSFET Model Libraries for Statistical Circuit Simulations 5:30 Boundary Condition Independence of Cauer RC Ladder Compact Thermal Models

6 WCM-I 10:30am 12:00pm T d Session Chair: Xing Zhou, Nanyang Technological University, SG Tuesday HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX M. Miura-Mattausch, H. Kikuchihara, U. Feldmann, T. Nakagawa, M. Miyake, T. Iizuka, H.J. Mattausch, Hiroshima University, JP Design Methodology for Ultra Low-Power Analog Circuits using Next Generation BSIM 6 Compact Model C.C. Enz, A. Mangla, M.-A. Chalkiadaki, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH BSIM6: Symmetric Bulk MOSFET Model Y.S. Chauhan, M.A. Karim, S. Venugopalan, S. Khandelwal, A. Niknejad, C. Hu, University of California, Berkeley, US

7 WCM-II 100 1:00pm 230 2:30pm T d Session Chair: Christian Enz, EPFL, CH Tuesday Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles T.A. Fjeldly, U. Monga, Norwegian University of Science and Technology, NO A Simplified Model for Dynamic Depletion in Doped UTB-SOI/DG- FinFETs X. Zhou, S.B. Chiah, L. Yuan, Nanyang Technological University, SG Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control S. Khandelwal, Y.S. Chauhan, M.A. Karim, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu, Norwegian University of Science & Technlogy, NO

8 WCM-III 300 3:00pm 500 5:00pm T d Session Chair: Tor Fjeldly, Norwegian University of Technology, NO Tuesday Correlated statistical SPICE models for High-Voltage LDMOS Transistors based on TCAD statistics E. Seebacher, A. Steinmair, austriamicrosystemsag, AT Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow F. Ueno, A. Tanaka, M. Miyake, T. Iizuka, T. Yamamoto, H. Kikuchihara, H.J. Mattausch, M. Miura-Mattausch, Hiroshima University, JP Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation T. Iizuka, K. Fukushima, A. Tanaka, M. Ueno, M. Miura-Mattausch, Hiroshima University, JP Unified Regional Approach to High Temperature SOI DC/AC Modeling S B Chiah X Zhou Z Chen H M Chen L Yuan Nanyang Technological S.B. Chiah, X. Zhou, Z. Chen, H.M. Chen, L. Yuan, Nanyang Technological University, SG

9 WCM-IV 830 8:30am 10:00am00 Wd d Session Chair: Mitiko Miura-Mattausch, Hiroshima University, JP Wednesday Measurement and Characterization of Interconnect Process Parameters for VLSI Design N. Arora, Silterra, MY i-mos: A Platform for Compact Modeling Sharing H. Wang, M. Chan, HKUST, HK Critical review of CNTFET compact models M. Claus, M. Haferlach, D. Gross, M. Schröter, Technische Universität Dresden, DE

10 WCM-V 10:30am 12:00pm Wd d Session Chair: Narain Arora, Silterra, MY Wednesday Hierarchical Memory Modeling for Reliable Integration Y. Cao, Z. Xu, C. Yang, K. Sutaria, C. Chakrabarti, Arizona State University, US Leakage current in HfO2 stacks: from physical to compact modeling L. Larcher, A. Padovani, P. Pavan, Università di Modena e Reggio Emilia, IT On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling X. Guan, S. Yu, H.-S.P. Wong, Stanford University, US

11 Wednesday WCM-VI 100 1:00pm 230 2:30pm Wd d Session Chair: Michael Schröter, University of Technology Dresden, DE Model the AlGaN/GaN High Electron Mobility Transistors Y. Wang, Tsinghua University, CN An analytical 2DEG model considering the two lowest subbands J. Zhang, X. Zhou, Nanyang Technological University, SG Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices S. Khandelwal, T.A. Fjeldly, NTNU, NO

12 WCM-VII 245 2:45pm 415 4:15pm Wd d Session Chair: Mansun Chan, HKUST, HK Wednesday Modeling of Chain History Effect based on HiSIM-SOI Y. Fukunaga, M. Miyake, A. Toda, K. Kikuchihara, S. Baba, U. Feldmann, H.J. Mattausch, M. Miura-Mattausch, Hiroshima university, JP Modeling and Analysis of MOS Capacitor Controlled by Independent d Double Gates P.K. Thakur, S. Mahapatra, Indian Institute of Science Bangalore, IN Understanding and Modeling Quasi-Static Capacitance-Voltage Characteristics of Organic Thin-Film Transistors C Ucurum H Goebel Helmut Schmidt University - University of the Federal C. Ucurum, H. Goebel, Helmut Schmidt University University of the Federal Armed Forces Hamburg, DE

13 Wednesday WCM-VIII 430 4:30pm 600 6:00pm Wd d Session Chair: Yogesh Chauhan, University of California at Berkeley, US Discreteness and Distribution of Drain Currents in FinFETs N. Lu, IBM, US A Fully Automated Method to Create Monte-Carlo MOSFET Model Libraries for Statistical Circuit Simulations J. Wang, H. Trombley, J. Watts, M. Randall, R. Wachnik, IBM Semiconductor Research and Development Center, US Boundary Condition Independence of Cauer RC Ladder Compact Thermal Models M Janicki T Torzewicz Z Kulesza A Napieralski Technical University of Lodz M. Janicki, T. Torzewicz, Z. Kulesza, A. Napieralski, Technical University of Lodz, PL