IR Series 25TTS..FP PHASE CONTROL SCR TO-220 FULLPAK V T I TSM V RRM. 800 to 1600V < 16A = 300A. Bulletin I2135 rev.

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1 IR Series 25TTS..FP PHASE CONTROL SCR TO-220 FULLPAK Description/Features The 25TTS..FP IR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 25 C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Fully isolated package (V INS = 2500 V RMS ) UL E78996 approved V T I TSM V RRM 6A = 300A 800 to 600V Output Current in Typical Applications Applications Single-phase Bridge Three-phase Bridge Units Capacitive input filter T A = 55 C, T J = 25 C, 8 22 A common heatsink of C/W Major Ratings and Characteristics Package Outline Characteristics 25TTS..FP Units I T(AV) Sinusoidal 6 A waveform I RMS 25 A V RRM / V DRM up to 600 V I TSM 300 A V 6 A, T J = 25 C.25 V dv/dt 500 V/µs di/dt 50 A/µs T J - 40 to 25 C TO-220 FULLPAK

2 Voltage Ratings Part Number V RRM, maximum V DRM, maximum I RRM /I DRM peak reverse voltage peak direct voltage 25 C V V ma 25TTS08FP TTS2FP TTS6FP Absolute Maximum Ratings I T(AV) Max. Average On-state Current 6 T C = 85 C, 80 conduction half sine wave I RMS Max. RMS On-state Current 25 I TSM Max. Peak One Cycle Non-Repetitive 300 ms Sine pulse, rated V RRM applied Surge Current 350 ms Sine pulse, no voltage reapplied I 2 t Max. I 2 t for fusing 450 A 2 s ms Sine pulse, rated V RRM applied 630 ms Sine pulse, no voltage reapplied I 2 t Max. I 2 t for fusing 6300 A 2 s t = 0. to ms, no voltage reapplied V TM Max. On-state Voltage Drop.25 6A, T J = 25 C r t On-state slope resistance 2.0 mω T J = 25 C V T(TO) Threshold Voltage.0 V I RM /I DM Max.Reverse and Direct 0.5 ma T J = 25 C Leakage Current T J = 25 C V R = rated V RRM / V DRM I H Holding Current Typ. Max. Anode Supply = 6V, Resistive load, Initial I T =A -- 0 ma 25TTS08FP, 25TTS2FP TTS6FP I L Max. Latching Current 200 ma Anode Supply = 6V, Resistive load dv/dt Max. Rate of Rise of off-state Voltage 500 V/µs di/dt Max. Rate of Rise of turned-on Current 50 A/µs 2

3 Triggering P GM Max. peak Gate Power 8.0 W P G(AV) Max. average Gate Power I GM Max. paek positive Gate Current.5 A - V GM Max. paek negative Gate Voltage V I GT Max. required DC Gate Current 60 ma Anode supply = 6V, resistive load, T J = - C to trigger 45 Anode supply = 6V, resistive load, T J = 25 C 20 Anode supply = 6V, resistive load, T J = 25 C V GT Max. required DC Gate Voltage 2.5 V Anode supply = 6V, resistive load, T J = - C to trigger 2.0 Anode supply = 6V, resistive load, T J = 25 C.0 Anode supply = 6V, resistive load, T J = 25 C V GD Max. DC Gate Voltage not to trigger 0.25 T J = 25 C, V DRM = rated value I GD Max. DC Gate Current not to trigger 2.0 ma T J = 25 C, V DRM = rated value Switching t gt Typical turn-on time 0.9 µs T J = 25 C t rr Typical reverse recovery time 4 T J = 25 C t q Typical turn-off time Thermal-Mechanical Specifications T J Max. Junction Temperature Range - 40 to 25 C T stg Max. Storage Temperature Range - 40 to 25 R thjc Max. Thermal Resistance Junction.5 C/W DC operation to Case R thja Max. Thermal Resistance Junction 62 to Ambient R thcs Typ. Thermal Resistance Case.5 Mounting surface, smooth and greased to Heatsink wt Approximate Weight 2 (0.07) g (oz.) T Mounting Torque Min. 6 (5) Kg-cm Max. 2 () (Ibf-in) Case Style TO-220 FULLPAK (94/V0) 3

4 Maximum Allowable Case Temperature ( C) 30 R thjc (DC) =.5 C/W 20 0 Conduction Angle Maximum Allowable Case Temperature ( C) R thjc(dc) =.5 C/W Conduction Period DC Fig. - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Maximum Average On-state Power Loss (W) RMS Limit Conduction Angle T = 25 C J Maximum Average On-state Power Loss (W) DC RMS Limit Conduction Period T = 25 C J Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = Hz Hz 0.00 s 50 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 25 C No Voltage Reapplied Rated V RRM Reapplied Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current

5 00 Instantaneous On-state Current (A) 0 T = 25 C J T = 25 C J Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics Transient Thermal Impedance Z thjc ( C/W) 0. D = 0.50 D = 0.33 D = 0.25 D = 0.7 D = 0.08 Single Pulse Steady State Value (DC Operation) Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics Instantaneous Gate Voltage (V) 0 Rectangular gate pulse a)recommended load line for rated di/dt: V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)recommended load line for <= 30% rated di/dt: V, 65 ohms tr = µs, tp >= 6 µs VGD TJ = 25 C TJ = 25 C TJ = - C (b) (a) () PGM = 40 W, tp = ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = ms (4) (3) (2) () IGD Frequency Limited by PG(AV) Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics 5

6 TTS..FP IR Series Outline Table.6.4 HOLE ø TYP TYP TYP..05 R0.7 (2 PLACES) R0.5 Dimensions in millimeters (and inches) 5 ± ± 0.5 Ordering Information Table Device Code 25 T T S 6 FP 2 (A) Current Rating, RMS value 2 - Circuit Configuration: (K) (G) 3 T = Single Thyristor 3 - Package: T = TO-220AC 4 - Type of Silicon: S = Converter Grade 08 = 800V 5 - Voltage code: Code x 0 = V RRM 2 = 200V 6 - TO-220 FULLPAK 6 = 600V 6

7 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California U.S.A. Tel: (3) Fax: (3) EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: Fax: IR CANADA: 5 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) Fax: (905) IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg. Tel: Fax: IR ITALY: Via Liguria 49, 07 Borgaro, Torino. Tel: Fax: IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 7. Tel: IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower,3-, Singapore Tel: IR TAIWAN: 6 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan. Tel: Fax-On-Demand: Data and specifications subject to change without notice. 7

40HF(R) SERIES 40 A STANDARD RECOVERY DIODES. Stud Version. Features. Typical Applications. Major Ratings and Characteristics

40HF(R) SERIES 40 A STANDARD RECOVERY DIODES. Stud Version. Features. Typical Applications. Major Ratings and Characteristics HF(R) SERIES STANDARD RECOVERY DIODES Stud Version Features High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available A Types