C4D10120D Silicon Carbide Schottky Diode Z-Rec Rectifier
|
|
- Rosanna Preston
- 5 years ago
- Views:
Transcription
1 C4D112D Silicon Carbide Schottky Diode Z-Rec Rectifier Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation emperature-independent Switching Extremely Fast Switching Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without hermal Runaway Package O RM = 12 V ( =135) = 18 ** Q c = 54 nc ** pplications Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages C/DC converters Maximum Ratings (=25 C unless otherwise specified) Part Number Package Marking C4D112D O C4D112 Symbol Parameter Value Unit est Conditions Note RM Repetitive Peak Reverse Voltage 12 V SM Surge Peak Reverse Voltage 13 V DC Peak Reverse Voltage 12 V Continuous Forward Current (Per Leg/Device) 19/38 9/18 5/1 =25 =135 =16 Fig. 3 RM Repetitive Peak Forward Surge Current 26* 18* =1 ms, Half Sine Pulse =11, t P =1 ms, Half Sine Pulse SM Non-Repetitive Forward Surge Current 46* 36* =1 ms, Half Sine Pulse =11, t P =1 ms, Half Sine Pulse Fig. 8,Max Non-Repetitive Peak Forward Current 4* 32* =1 ms, Pulse =11, t P =1 ms, Pulse Fig. 8 P tot Power Dissipation(Per Leg/Device) 93/187 4/81 W =25 =11 Fig. 4 dv/dt Diode dv/dt ruggedness 2 V/ns =-65V i 2 dt i 2 t value 1.6* 6.5* 2 s =1 ms =11, t P =1 ms Operating Junction Range -55 to +175 stg Storage emperature Range -55 to +135 O-247 Mounting orque * Per Leg, ** Per Device Nm lbf-in M3 Screw 6-32 Screw 1 C4D112D Rev. H, 9-216
2 Electrical Characteristics (Per Leg) Symbol Parameter yp. Max. Unit est Conditions Note V F I R Forward Voltage Reverse Current Q C otal Capacitive Charge 27 nc C otal Capacitance V μ pf = 5 =25 C = 5 = 12 V =25 C = 12 V = 8 V, = 5 di/dt = 2 /μs = V,, f = 1 MHz = 4 V, = 25, f = 1 MHz = 8 V, = 25, f = 1 MHz Fig. 1 Fig. 2 Fig. 5 Fig. 6 E C Capacitance Stored Energy 8. μj = 8 V Fig. 7 Note:his is a majority carrier diode, so there is no reverse recovery charge. hermal Characteristics Symbol Parameter yp. Unit Note R θjc hermal Resistance from Junction to Case * Per Leg, ** Per Device 1.6*.8** C/W Fig. 9 ypical Performance (Per Leg) =-55 C = 75 C =125 C Current I () F () Current I (µ) R (μ) =-55 C = 75 C =125 C Voltage V F Voltage Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D112D Rev. H, 9-216
3 ypical Performance (Per Leg) 6 1. (peak) () % Duty 2% Duty 3% Duty 5% Duty 7% Duty DC P ot (W) Figure 3. Current Derating Figure 4. Power Derating Q c (nc) 2 15 C (pf) Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3 C4D112D Rev. H, 9-216
4 ypical Performance E C (mj) E C Capacitive Energy (uj) SM IFSM() 1 _initial _initial = 11 C Reverse V Voltage R Figure 7. ypical Capacitance Stored Energy, per leg 1 1E-5 1.E-5 1E-4 1.E-4 1E-3 1.E-3 1E-2 1.E-2 tp(s) t p (s) Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform), per leg 1 Junction hermal o Case Resistance Impedance, (/W) Z thjc ( o C/W) 1E-3 1E SinglePulse 1E-3 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 ime, (Sec) t p (s) Figure 9. Device ransient hermal Impedance 4 C4D112D Rev. H, 9-216
5 Package Dimensions Package O e Inches Millimeters POS Min Max Min Max b b b c D D D E E E E E e.214 BSC 5.44 BSC L L N 3 ØP Q S REF W 3.5 REF X 4 REF Recommended Solder Pad Layout Part Number Package Marking C4D112D O C4D112 all units are in inches O Note: Recommended soldering profiles can be found in the applications note here: 5 C4D112D Rev. H, 9-216
6 Diode Model Vf = V + If * R V =.96 + ( j * -1.22*1-3 ) R =.8 + ( j * 8.5*1-4 ) Note: j is diode junction temperature in degrees Celsius valid from 25 C to 175 C Note: j = Diode Junction emperature In Degrees Celsius, Notes RoHS Compliance he levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at RECh Compliance RECh substances of high concern (SVHCs) information is available for this product. Since the European Chemical gency (ECH) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date RECh SVHC Declaration. RECh banned substance information (RECh rticle 67) is also available upon request. his product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links Cree SiC Schottky diode portfolio: Schottky diode Spice models: SiC MOSFE and diode reference designs: Copyright 216 Cree, Inc. ll rights reserved. he information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 US el: Fax: C4D112 Rev. H, 9-216
C4D05120A Silicon Carbide Schottky Diode Z-Rec Rectifier
C4D512 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =135) = 9.5 Q c = 27 nc Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
More informationC4D02120A Silicon Carbide Schottky Diode Z-Rec Rectifier
C4D22 Silicon Carbide Schottky Diode Z-Rec Rectifier Features.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive
More informationC4D05120E Silicon Carbide Schottky Diode Z-Rec Rectifier
C4D12E Silicon Carbide Schottky Diode Z-Rec Rectifier Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast
More informationC4D20120H Silicon Carbide Schottky Diode Z-Rec Rectifier
C4D212H Silicon Carbide Schottky Diode Z-Rec Rectifier Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching
More informationC3D30065D Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D365D Silicon Carbide Schottky Diode Z-Rec Rectifier Features 65 Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching
More informationC3D20060D Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D26D Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 6 V ( =135 C) = 26 ** Q c = 48 nc** Features 6-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationC3D10065E Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D165E Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 65 V ( =135 C) = 15 Q c = 24 nc Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationC3D10065I Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D65I Silicon Carbide Schottky Diode Z-Rec Rectifier Features 65-Volt Schottky Rectifier Ceramic Package Provides 2.5kV Isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
More informationZ-Rec Rectifier. C4D02120A Silicon Carbide Schottky Diode. Package. Features. Benefits. Applications
C4D22 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 2 V ( =35 C) = 5 Q c = nc Features Package.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent
More informationZ-Rec Rectifier. C4D02120E Silicon Carbide Schottky Diode. Package. Features. Benefits. Applications
C4D212E Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =135) = 4.5 Q c = 11 nc Features Package 1.2kV Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current
More informationPackage TO = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note 29.5/59 14/28 10/20 67/134 44/88 90/157 71/115
C3D265D Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 65 V ( =135 C) = 28 A** Q c = 5 nc** Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationC3D20060D Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D060D Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 600 V ( =135 C) = 28 A** Q c = nc** Features 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationC4D05120A Silicon Carbide Schottky Diode Z-Rec Rectifier
C4D2 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 2 V = Q c =34. nc Features Package.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation emperature-independent Switching
More informationC3D03060F Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak)
C3D36F Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak) RM = 6 V ( =1 C) = 3 Q c = 6.7 nc Features 6-Volt Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current
More informationC3D1P7060Q Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D1P7Q Silicon Carbide Schottky Diode Z-Rec Rectifier RM = V ( =135 C) = 3.3 A Q c = 4 nc Features -Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency
More informationC3D03060F Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak)
3D3F Silicon arbide Schottky Diode Z-Rec Rectifier (Full-Pak) RM = V ( =11 ) = 3 Q c =.7 n Features -Volt Schottky Rectifier Zero Reverse Recovery urrent Zero Forward Recovery Voltage High-Frequency Operation
More informationC3D1P7060Q Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D1P060Q Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 600 V ( =135 C) = 3 A Q c = 4.4 nc Features 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
More informationC3D04060A Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D46A Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 6 V I F(AVG) = 4 A Q c = 8.5 nc Features 6-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero
More informationCSD20060D Silicon Carbide Schottky Diode Zero Recovery Rectifier
CSD26D Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 6 V I F(AVG) = 2 A Q c = 56 nc Features 6-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency
More informationC3D06060A Silicon Carbide Schottky Diode Z-Rec Rectifier
C3D66A Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 6 V I F(AVG) = 6 A Q c = 16 nc Features 6-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation
More informationCSD06060 Silicon Carbide Schottky Diode Zero Recovery Rectifier
Datasheet: CSD66 Rev. R CSD66 Silicon Carbide Schottky Diode Zero Recovery Rectifier RM = 6 V I F(AVG) = 6 A Q c = 17 nc Features 6-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery
More informationPackage. TAB Drain. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 22 V GS = 15 V, T C = 100 C.
C3M659J Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode V DS I D @ 25 C R DS(on) 9 V 35 A 65 mω Features New C3M SiC MOSFET technology New low impedance package with driver
More informationData Sheet GHXS030A120S D3
SiC SBD Parallel Power Module V RRM =1200V I DAV = 30A @T C = 125 0 C Features SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature
More informationFeatures. Applications. Benefits
SiC SBD Rectifier Bridge Power Module V RRM =600V I DAV = 30A @T C = 125 0 C Features SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive
More informationC3M J. Silicon Carbide Power MOSFET C3M TM MOSFET Technology. N-Channel Enhancement Mode. Features. Package. Benefits.
C3M0280090J Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode V DS I D @ 25 C R DS(on) 900 V 11 A 280 mω Features Package New C3M SiC MOSFET technology High blocking voltage
More informationC3M K. Silicon Carbide Power MOSFET C3M TM MOSFET Technology. N-Channel Enhancement Mode. Features. Package. Benefits.
C3M0030090K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 900 V 63 A 30 mω C3M TM SiC MOSFET technology Optimized package with
More informationData Sheet GHIS030A120S-A2
Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =1200V I C = 30A @T C = 100 0 C E A G C Features Field StopTrench Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50
More informationData Sheet GHIS040A060S A2
Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =600V I C = 40A @T C = 100 0 C Features Field StopTrench Fast IGBT Low voltage drop Low tail current Switching frequency up to 50 khz Low leakage
More informationGCMS080A120S1 E1. Preliminary Data Sheet. 1200V/80 mohm SiC MOSFET in SOT-227 Package
1200V/80 mohm SiC MOSFET in SOT-227 Package V RRM =1200V I D = 20A @T C = 80 0 C R DS_ON = 80 mohm @ T J = 25 0 C 1 1 4 2 2 3 Features High speed switching SiC MOSFET Freewheeling diode with zero reverse
More informationGCMS004A120S7B1. Preliminary Datasheet. 1200V 4.2 m SiC MOSFETs Half Bridge Module. Features. Applications. Benefits
1200V 4.2 m SiC MOSFETs Half Bridge Module Features Ultra Low Loss with SiC MOSFETs Zero Reverse Recovery Current with SiC SBDs Zero Turn off Tail Current High Frequency Operation Positive Temperature
More informationcase TO 252 Parameter Symbol Conditions Values Unit Repetitive Peak Reverse Voltage V RRM 1200 V T C = 25 C, D = 1 T C = 135 C, D = 1
Silicon Carbide Power Schottky Diode V RRM = 1200 V I F (Tc = 135 C) = 5 A Q C = 13 nc Features High Avalanche (UIS) Capability Enhanced Surge Current Capability 175 C Maximum Operating Temperature Temperature
More informationSiC Schottky Diode DCG20C1200HR. Ultra fast switching Zero reverse recovery Common Cathode. V RRM = 1200 V I FAV = 2x 12.5 A.
DCG2C12HR SiC Schottky Diode RRM = 12 I F = 2x 12.5 Ultra fast switching Zero reverse recovery Common Cathode Part number DCG2C12HR Backside: isolated E72873 1 2 3 Features / dvantages: Ultra fast switching
More informationFFSP1065A/D. Silicon Carbide Schottky Diode 650 V, 10 A Features. FFSP1065A Silicon Carbide Schottky Diode. Description.
FFSP65A Silicon Carbide Schottky Diode 65 V, A Features Max Junction Temperature 75 o C Avalanche Rated 6 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationFFSP1665A/D. Silicon Carbide Schottky Diode 650 V, 16 A Features. FFSP1665A Silicon Carbide Schottky Diode. Description.
FFSP1665A Silicon Carbide Schottky Diode 65 V, 16 A Features Max Junction Temperature 175 o C Avalanche Rated 81 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationSchottky Rectifier, 3.0 A
Schottky Rectifier, 3.0 A VS-30BQ040PbF Vishay High Power Products SMC Cathode Anode FEATURES Small foot print, surface mountable Very low forward voltage drop High frequency operation Guard ring for enhanced
More informationHigh Performance Schottky Rectifier, 1.0 A
VS-MBRS19-M3, VS-MBRS1-M3 High Performance Schottky Rectifier, 1. A Cathode Anode SMB PRODUCT SUMMARY Package SMB I F(AV) 1 A V R 9 V, V V F at I F.78 V I RM 1 ma at 125 C T J max. 175 C Diode variation
More informationHigh Performance Schottky Rectifier, 3.0 A
High Performance Schottky Rectifier, 3.0 A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3.0 A V R 60 V V F at I F 0.52 V I RM 20 ma at 125 C T J max. 150 C Diode variation Single die E AS 5.0
More informationSTPSC40065C. 650 V power Schottky silicon carbide diode. Description. Features
STPSC465C 65 V power Schottky silicon carbide diode Datasheet - production data Features A1 A2 TO-247 No reverse recovery charge in application current range Switching behavior independent of temperature
More informationPower MOSFET FEATURES. IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A
Power MOSFET IRFIB6N60A, SiHFIB6N60A PRODUCT SUMMARY V DS (V) 600 R DS(on) (Ω) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single TO-220 FULLPAK D G FEATURES Low Gate Charge
More informationHigh Performance Schottky Rectifier, 3 A
High Performance Schottky Rectifier, 3 A VS-3BQ-M3 Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R V V F at I F.62 V I RM 5 ma at 125 C T J max. 175 C Diode variation Single die E AS 3.
More informationSiC Schottky Diode. Ultra fast switching Zero reverse recovery DCG85X1200NA. V RRM = 1200 V I FAV = 2x 41 A. prelimininary. Part number DCG85X1200NA
DCG85X12N SiC Schottky Diode RRM = 12 I F = 2x 41 Ultra fast switching Zero reverse recovery Part number DCG85X12N Backside: isolated UL pending 2 3 1 4 Features / dvantages: Ultra fast switching Zero
More information600 V 10 A. IXRFFB60110 Silicon Carbide Full Wave Bridge Rectifier. Description. Figure 1 Functional Diagram
IXRFFB611 Features Silicon carbide Schottky diodes No reverse recovery for soft turn-off Temperature independent switching behavior Low leakage current Easy to mount, no insulators needed High power density
More informationHigh Performance Schottky Rectifier, 200 A
High Performance Schottky Rectifier, 200 A VS-203CNQPbF TO-244 PRODUCT SUMMARY I F(AV) V R Package Circuit Lug terminal anode Lug terminal anode 2 Base common cathode 200 A V TO-244 Two diodes common cathodes
More informationBase part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF
IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
More informationPower MOSFET FEATURES. Full Bridge PFC Boost. IRFP460APbF SiHFP460A-E3 IRFP460A SiHFP460A
IRFP460, SiHFP460 Power MOSFET PRODUCT SUMMRY (V) 500 R DS(on) (Ω) = 0 V 0.27 Q g (Max.) (nc) 05 Q gs (nc) 26 Q gd (nc) 42 Configuration Single TO-247 S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb
More informationHigh Performance Schottky Rectifier, 1.0 A
High Performance Schottky Rectifier, 1.0 A VS-BQ015HM3 Cathode Anode PRODUCT SUMMARY Package SMB I F(AV) 1.0 A V R 15 V V F at I F 0.21 V I RM 35 ma at 0 C T J max. 125 C Diode variation Single die E AS
More informationSTPSC10H12C V power Schottky silicon carbide diode
1200 V power Schottky silicon carbide diode Datasheet - production data Features A1 A2 No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery Operating
More informationPower MOSFET FEATURES. Full Bridge PFC Boost. IRFP460APbF SiHFP460A-E3 IRFP460A SiHFP460A
IRFP60, SiHFP60 Power MOSFET PRODUCT SUMMRY (V) 500 R DS(on) (Ω) = 0 V 0.27 Q g (Max.) (nc) 05 Q gs (nc) 26 Q gd (nc) 2 Configuration Single TO-27 S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb
More informationHigh Performance Schottky Rectifier, 1 A
High Performance Schottky Rectifier, 1 A Cathode Anode DO-214AC (SMA) PRODUCT SUMMARY Package DO-214AC (SMA) I F(AV) 1 A V R 40 V V F at I F 0.49 V I RM 26 ma at 125 C T J max. 150 C Diode variation Single
More informationPower MOSFET FEATURES. IRF830PbF SiHF830-E3 IRF830 SiHF830 T C = 25 C
Power MOSFET PRODUCT SUMMARY V DS (V) 00 R DS(on) ( ) = 0 V. Q g (Max.) (nc) 38 Q gs (nc).0 Q gd (nc) Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationHigh Performance Schottky Rectifier, 3.0 A
High Performance Schottky Rectifier, 3.0 A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3.0 A V R 15 V V F at I F 0.3 V I RM 50 ma at C T J max. 125 C Diode variation Single die E AS 1.5 mj FEATURES
More informationprovide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40
APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off
More informationSchottky Rectifier, 1.0 A
VS-BQ040PbF Schottky Rectifier, 1.0 A SMB Cathode Anode FEATURES Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability
More informationSTPSC30H12C V power Schottky silicon carbide diode. Description. Features
STPSC3H12C 12 V power Schottky silicon carbide diode Datasheet - production data Features A1 A2 No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery
More informationNo or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications
Datasheet 650 V power Schottky silicon carbide diode Features K A K K No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications TO-220AC K A K A NC D²PAK
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationPower MOSFET FEATURES. IRFP22N50APbF SiHFP22N50A-E3 IRFP22N50A SiHFP22N50A
Power MOSFET IRFP22N50, SiHFP22N50 PRODUCT SUMMRY (V) 500 R DS(on) ( ) V GS = 10 V 0.23 Q g (Max.) (nc) 120 Q gs (nc) 32 Q gd (nc) 52 Configuration Single D TO-27C G FETURES Low Gate Charge Q g Results
More informationHCD80R1K4E 800V N-Channel Super Junction MOSFET
HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationPower MOSFET FEATURES. IRLZ44PbF SiHLZ44-E3 IRLZ44 SiHLZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.028 Q g (Max.) (nc) 66 Q gs (nc) 12 Q gd (nc) 43 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationSTPSC20H V power Schottky silicon carbide diode. Datasheet. Features. Description. No or negligible reverse recovery
Datasheet 1200 V power Schottky silicon carbide diode Features A K No or negligible reverse recovery K K Switching behavior independent of temperature Robust high voltage periphery Operating from -40 C
More informationHCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationHCD80R650E 800V N-Channel Super Junction MOSFET
HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationSTPSC20H12C V power Schottky silicon carbide diode
1200 V power Schottky silicon carbide diode Datasheet - production data Features A1 A2 No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery Operating
More informationHigh Performance Schottky Rectifier, 1 A
High Performance Schottky Rectifier, A VS-MQNTRPbF Cathode Anode SMA (DO-24AC) PRODUCT SUMMARY Package SMA (DO-24AC) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single
More informationHigh Temperature Silicon Carbide Power Schottky Diode
High Temperature Silicon Carbide Power Schottky Diode Features 650 V Schottky rectifier 210 C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature
More informationCAS325M12HM2 1.2kV, 3.6 mω All-Silicon Carbide High Performance, Half-Bridge Module C2M MOSFET and Z-Rec TM Diode
CAS325M12HM2 1.2k, 3.6 mω All-Silicon Carbide High Performance, Half-Bridge Module C2M MOSFET and Z-Rec TM Diode DS E sw, Total @ 600, 300A R DS(on) 1.2 k 9.3 mj 3.6 mω Features Ultra Low Loss, Low (5
More informationSchottky Rectifier, 2 A
Schottky Rectifier, 2 A VS-20MQ00-M3 Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) 2 A V R 00 V V F at I F 0.72 V I RM ma at 25 C T J max. 50 C Diode variation Single die E
More informationBase Part Number Package Type Standard Pack Orderable Part Number
V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
More informationSchottky Rectifier, 1.0 A
VS-BQ15PbF Schottky Rectifier, 1. A Cathode Anode SMB PRODUCT SUMMARY Package SMB (DO-214AA) I F(AV) 1 A V R 15 V V F at I F.32 V I RM 12 ma at C T J max. 125 C Diode variation Single die E AS 1 mj FEATURES
More informationSTPSC6H V power Schottky silicon carbide diode. Description. Features
1200 V power Schottky silicon carbide diode Description Datasheet - production data ST's 1200 V high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applications
More informationCMF20120D-Silicon Carbide Power MOSFET 1200V 80 mω Z-FeT TM MOSFET
CMFD Rev. A CMFD-Silicon Carbide Power MOSFET V 8 mω Z-FeT TM MOSFET N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power CMFD-Silicon Carbide Power MOSFET Z-FeT TM MOSFET N-Channel
More informationHigh Performance Schottky Rectifier, 1.0 A
High Performance Schottky Rectifier, 1. A VS-BQ3-M3 Cathode Anode SMB PRODUCT SUMMARY Package SMB I F(AV) 1. A V R 3 V V F at I F.42 V I RM max. 15 ma at 125 C T J max. 15 C Diode variation Single die
More informationPower MOSFET Stage for Boost Converters
UM 33-6PH Power MOSFET Stage for Boost Converters Module for Power Factor Correction Single Phase Boost Diode MOSFET Rectifier RRM = 16 RRM = 6 S = 6 = 16 I F25 = 6 25 = I FSM = 3 F (3) = 2.24 R DS(on)
More informationFeatures V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit
General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,
More informationSchottky Rectifier, 440 A
TO-244 PRODUCT SUMMARY I F(AV) V R Lug terminal anode Base common cathode 44 A 3 V Lug terminal anode 2 FEATURES 5 C operation Center tap module Very low forward voltage drop High frequency operation Guard
More informationHigh Performance Schottky Rectifier, 400 A
High Performance Schottky Rectifier, 4 A TO-244 Lug terminal anode Lug terminal anode 2 Base common cathode FEATURES 75 C T J operation Center tap module Low forward voltage drop High frequency operation
More informationVS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 Schottky Rectifier, 1.1 A
Schottky Rectifier, 1.1 A Cathode Anode DO-204AL PRODUCT SUMMARY Package DO-204AL (DO-41) I F(AV) 1.1 A V R 50 V, 60 V V F at I F See Electrical table I RM max. 11.0 ma at 125 C T J max. 150 C Diode variation
More informationSTPSC20H V power Schottky silicon carbide diode. Description. Features
12 V power Schottky silicon carbide diode Datasheet - production data A K K K A K TO-22AC Features A NC D²PAK No or negligible reverse recovery Switching behavior independent of temperature Robust high
More informationPower MOSFET FEATURES DESCRIPTION. IRF720PbF SiHF720-E3 IRF720 SiHF720 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 400 V R DS(on) (Ω) = 10 V 1.8 Q g (Max.) (nc) 0 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single TO-0AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S N-Channel
More informationHigh Performance Schottky Rectifier, 1.5 A
High Performance Schottky Rectifier, 1.5 A Cathode Anode SMA (DO-214AC) PRODUCT SUMMARY Package SMA (DO-214AC) I F(AV) 1.5 A V R 40 V V F at I F 0.43 V I RM 20 ma at 125 C T J max. 150 C Diode variation
More informationHigh Performance Schottky Rectifier, 1 A
High Performance Schottky Rectifier, A VS-MQ060NTRPbF Cathode Anode SMA (DO-24AC) PRODUCT SUMMARY Package SMA (DO-24AC) I F(AV) A V R 60 V V F at I F 0.63 I RM 7.5 ma at 25 C T J max. 50 C Diode variation
More informationAPT50GS60BRDQ2(G) APT50GS60SRDQ2(G)
APTGSBRDQ(G) APTGSSRDQ(G) V, A, (ON) =.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar
More informationObsolete Product(s) - Obsolete Product(s)
6 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The SiC diode
More informationHigh Performance Schottky Rectifier, 240 A
High Performance Schottky Rectifier, 240 A HALF-PAK (D-67) PRODUCT SUMMARY I F(AV) V R Package Circuit Lug terminal anode Base cathode 240 A 150 V HALF-PAK (D-67) Single diode FEATURES 175 C T J operation
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationPower MOSFET FEATURES. IRFBC30PbF SiHFBC30-E3 IRFBC30 SiHFBC30
Power MOSFET PRODUCT SUMMARY (V) 600 R DS(on) (Ω) V GS = 10 V 2.2 Q g (Max.) (nc) 31 Q gs (nc) 4.6 Q gd (nc) 17 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
More informationPower MOSFET FEATURES. IRF740LCPbF SiHF740LC-E3 IRF740LC SiHF740LC T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = V 0.55 Q g (Max.) (nc) 39 Q gs (nc) Q gd (nc) 19 Configuration Single FEATURES Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V Rating
More informationTO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationPower MOSFET FEATURES DESCRIPTION. IRF840PbF SiHF840-E3 IRF840 SiHF840 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) () = 0.85 Q g max. (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single D TO-220AB G G DS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free
More informationPower MOSFET FEATURES. IRFP460NPbF SiHFP460N-E3 IRFP460N SiHFP460N
Power MOSFET PRODUCT SUMMARY V DS (V) 500 R DS(on) (Ω) V GS = V 0.24 Q g (Max.) (nc) 24 Q gs (nc) 40 Q gd (nc) 57 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
More informationSTPS40H100CW. 100 V power Schottky rectifier. Datasheet. Features. Applications. Description
Datasheet 100 V power Schottky rectifier A1 A2 TO-247 K A2 K A1 Features Negligible switching losses Low leakage current Good trade-off between leakage current and forward voltage drop Low thermal resistance
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationPower MOSFET FEATURES. IRFB11N50APbF SiHFB11N50A-E3 IRFB11N50A SiHFB11N50A
Power MOSFET IRFBN50, SiHFBN50 PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = V 0.52 Q g (Max.) (nc) 52 Q gs (nc) 3 Q gd (nc) 8 Configuration Single FETURES Low Gate Charge Q g Results in Simple Drive
More informationPower MOSFET. IRFP450APbF SiHFP450A-E3 IRFP450A SiHFP450A
IRFP450, SiHFP450 Power MOSFET PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 64 Q gs (nc) 16 Q gd (nc) 26 Configuration Single D FETURES Low Gate Charge Q g Results in Simple
More informationHCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationPower MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
More informationPower MOSFET. IRFP450APbF SiHFP450A-E3 IRFP450A SiHFP450A
IRFP450, SiHFP450 Power MOSFET PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 64 Q gs (nc) 16 Q gd (nc) 26 Configuration Single D FETURES Low Gate Charge Q g Results in Simple
More informationSCHOTTKY RECTIFIER. Description/ Features 3.80 (.150) 3.30 (.130) 0.30 (.012) 0.15 (.006)
Bulletin PD-2059 rev. C 03/03 MBRS40TR SCHOTTKY RECTIFIER Amp SMB Major Ratings and Characteristics Characteristics MBRS40TR Units I F(AV) Rectangular waveform.0 A V RRM 40 V I FSM @ tp = 5 µs sine 380
More informationHigh Performance Schottky Rectifier, 100 A
High Performance Schottky Rectifier, A Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R 15 V V F at I F 0.45 V I RM 870 ma at C T J max. 125 C Diode variation Single die E AS 9 mj
More information