N-Channel Enhancement Mode Field Effect Transistor 2N7000A. Features. Mechanical Data. Maximum Ratings (T Ambient =25ºC unless noted otherwise)
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1 Features N-Channel Enhancement Mode Field Effect Transistor High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability RoHS compliance TO-92 Mechanical Data Case: TO-92, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: 0.18 gram Maximum Ratings (T Ambient =25ºC unless noted otherwise) Symbol Description Unit VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Continuous 500 ma Drain Current IDP Pulsed (Note 1) 2000 ma PD Drain Power Dissipation 625 mw TJ Junction Temperature 150 C TSTG Storage Temperature Range -55 to +150 C Note 1: Pulse Width<10µs, Duty Cycle<1% TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800) (661) Fax: (800)-TAITFAX (800) (661) Page 1 of 8
2 Equivalent Circuit This transistor is electrostatic sensitive device. Please handle with caution. Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Typ. Max. Unit Conditions BVDSS Drain-Source Breakdown Voltage V VGS=0V, ID=10µA IDSS Zero Gate Voltage Drain Current µa VDS=60V, VGS=0V IGSSF Gate- Body Leakage, Forward na VGS=20V, VDS=0V IGSSR Gate- Body Leakage, Reverse na VGS=-20V, VDS=0V On Characteristics (Note 2) Symbol Description Min. Typ. Max. Unit Conditions Vth Gate Threshold Voltage V VDS=VGS, ID=250µA RDS(ON) VDS(ON) Drain-Source ON Resistance Drain-Source ON Voltage Ω VGS=10V, ID=500mA Ω VGS=5V, ID=50mA V VGS=10V, ID=500mA V VGS=5V, ID=50mA ID(ON) On State Drain Current ma VGS=10V, VDS 2VDS(ON) gfs Forward Transconductance ms VDS=10V, ID=500mA VSD Drain-Source Diode Forward Voltage V VGS=0V, IS=200mA(Note 1) Page 2 of 8
3 Note 2: Pulse Test: Pulse Width<80µs, Duty Cycle<1% Dynamic Characteristics Symbol Description Min. Typ. Max. Unit Conditions CISS Input Capacitance pf CRSS Reverse Transfer Capacitance pf VDS=25V, VGS=0V, f=1mhz COSS Output Capacitance pf ton Turn-on Time ns Switching Time toff Turn-off Time ns VDD=30V, RL=155Ω, ID=190mA, VGS=10V Switching Time Test Circuit Page 3 of 8
4 Typical Characteristics Curves Fig.1- ID - VDS Fig.2- RDS(ON) - ID Drain Current ID (A) Drain-Source ON Resistance RDS(ON) (Ω) Drain-Source Voltage VDS (V) Drain Current ID (A) Fig.3- RDS(ON) - TJ Fig.4- ID - VGS Drain-Source ON Resistance RDS(ON) (Ω) Drain Current ID (A) Junction Temperature TJ ( C) Gate-Source Voltage VGS (V) Page 4 of 8
5 Gate-Source Threshold Voltage Vth (V) Fig.5- Vth - TJ Reverse Drain Current IS (A) Fig.6- Is - VSD Junction Temperature TJ ( C) Body Diode Forward Voltage VSD (V) Fig.7- C - VDS Fig.8- VGS - Qg Capacitance C (pf) Gate-Source Voltage VGS (V) Drain Source Voltage VDS (V) Gate Charge Qg (nc) Page 5 of 8
6 Fig.9- SOA Fig.10- PD - TA Drain Current ID (A) Drain Power Dissipation PD (mw) Drain Source Voltage VDS (V) Ambient Temperature TA ( C) Page 6 of 8
7 Dimensions in mm TO-92 Page 7 of 8
8 How to contact us: US HEADQUARTERS WEST HARRISON PARKWAY, VALENCIA, CA Tel: (800) TAITRON (800) (661) Fax: (800) TAITFAX (800) (661) TAITRON COMPONENTS MEXICO, S.A.DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P MEXICO Tel: Fax: TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP BRAZIL Tel: Fax: TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN AN ROAD, SUITE 1503, SHANGHAI, , CHINA Tel: Fax: Page 8 of 8
N-Channel Enhancement Mode Field Effect Transistor 2N7000. Features. Mechanical Data. Maximum Ratings (T Ambient =25ºC unless noted otherwise) TO-92
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More informationSPP2303. P-Channel Enhancement Mode MOSFET
DESCRIPTION The is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to
More informationSPP1433. P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1433 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationP-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP2319W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationVDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 180. Qrr (nc) typ 54. * Dynamic R(on)
600V Cascode GaN FET in TO-220 (drain tab) Description The 600V, 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster
More informationSTN2302. N-Channel Enhancement Mode MOSFET. 20V N-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and operation
More informationSymbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V
% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 3V mω A Description TO Pin Configuration
More informationDual P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationVDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 63. Qrr (nc) typ 136. * Dynamic R(on)
600V Cascode GaN FET in TO-247 (source tab) Not recommended for new designs see TP65H050WS Description The TPH3205WS 600V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer
More informationParameter Symbol Limit Unit IDM 20 A T A = PD T A =100
Features: Super high dense cell design for low R DS(ON) Rugged and reliable Surface Mount Package B VDSS =20V, R DS(ON) =24.5mΩ ID=6A Application DC-DC converters Power management in portable and Battery-powered
More informationSPP2301D. P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP2301D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationTPH3212PS. 650V Cascode GaN FET in TO-220 (source tab)
650V Cascode GaN FET in TO-220 (source tab) Description The TPH3212PS 650V, 72mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationSPN180T10. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control
DESCRIPTION The SPN180T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially
More informationPIN CONFIGURATION(SOP 8P)
DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationSI-TECH SEMICONDUCTOR CO.,LTD S85N10R/S
N-Channel MOSFET Features 85V,100A,Rds(on)(typ)=5.8mΩ @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech
More informationSPP3413. P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationSPN8822. Common-Drain Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN8822 is the logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize
More informationVDS (V) min 650 VTDS (V) max 800 RDS(on) (mω) max* 60. Qrr (nc) typ 136. Qg (nc) typ 28. * Dynamic RDS(on)
650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 49mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationMCH6662. Power MOSFET 20V, 160mΩ, 2A, Dual N-Channel. Features. Specifications
MCH666 Power MOSFET V, 16mΩ, A, Dual N-Channel Features ON-Resistance Nch : RDS(on)1=1mW (typ) 1.8V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum
More informationCPH6443. Power MOSFET 35V, 37mΩ, 6A, Single N-Channel
Power MOSFET 35V, 37mΩ, 6A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More informationP-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Description The is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density
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