N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET SO-8

Transcription

1 l Generation Technology l Ultra Low OnResistance l ual N and P Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l LeadFree escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO8 has been modified through a customized leadframe for enhanced thermal characteristics and multipledie capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S G S2 G2 NCHNNEL MOSFET PCHNNEL MOSFET P 9579 IRF7307PbF HEXFET Power MOSFET Top iew R S(on) 0.050Ω 0.090Ω SO8 NCh PCh SS bsolute Maximum Ratings Parameter Max. NChannel PChannel Units T = 25 C Sec. Pulse rain Current, T = 25 C Continuous rain Current, T = 70 C Continuous rain Current, I M Pulsed rain Current 2 7 = 25 C Power issipation 2.0 W Linear erating Factor 0.06 W/ C GS GatetoSource oltage ± 2 dv/dt Peak iode Recovery dv/dt /ns T J, T STG Junction and Storage Temperature Range 55 to 50 C Thermal Resistance Ratings Parameter Typ. Max. Units R θj Maximum Junctiontombient 62.5 C/W /7/04

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions NCh 20 GS = 0, I = 250µ (BR)SS raintosource Breakdown oltage PCh 20 GS = 0, I = 250µ NCh Reference to 25 C, I = m (BR)SS / T J Breakdown oltage Temp. Coefficient / C PCh 0.02 Reference to 25 C, I = m R S(ON) Static raintosource OnResistance GS = 4.5, I = 2.6 ƒ NCh GS = 2.7, I = 2.2 ƒ Ω GS = 4.5, I = 2.2 ƒ PCh 0.40 GS = 2.7, I =.8 ƒ NCh 0.70 S = GS, I = 250µ GS(th) Gate Threshold oltage PCh 0.70 S = GS, I = 250µ g NCh 8.30 S = 5, I = 2.6 ƒ fs Forward Transconductance S PCh 4.00 S = 5, I = 2.2 ƒ NCh.0 S = 6, GS = 0 I PCh.0 S = 6, GS = 0, SS raintosource Leakage Current µ NCh 25 S = 6, GS = 0, T J = 25 C PCh 25 S = 6, GS = 0, T J = 25 C I GSS GatetoSource Forward Leakage NP ±0 GS = ± 2 Q NCh 20 g Total Gate Charge NChannel PCh 22 I NCh 2.2 = 2.6, S = 6, GS = 4.5 Q gs GatetoSource Charge nc ƒ PCh 3.3 PChannel Q NCh 8.0 gd Gatetorain ("Miller") Charge I PCh 9.0 = 2.2, S = 6, GS = 4.5 t NCh 9.0 d(on) TurnOn elay Time NChannel PCh 8.4 NCh 42 =, I = 2.6, R G = 6.0Ω, t r Rise Time R PCh 26 = 3.8Ω ns t NCh 32 d(off) TurnOff elay Time PChannel PCh 5 t NCh 5 =, I = 2.2, R G = 6.0Ω, f Fall Time R PCh 33 = 4.5Ω ƒ L Internal rain Inductace NP 4.0 Between lead tip nh L S Internal Source Inductance NP 6.0 and center of die contact C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance Sourcerain Ratings and Characteristics NCh 660 PCh 6 NCh 280 PCh 3 NCh 40 PCh 70 Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body iode) NCh 2.5 PCh 2.5 I SM Pulsed Source Current (Body iode) NCh 2 PCh 7 S t rr Q rr iode Forward oltage Reverse Recovery Time Reverse Recovery Charge NCh.0 T J = 25 C, I S =.8, GS = 0 ƒ PCh.0 T J = 25 C, I S =.8, GS = 0 ƒ NCh ns NChannel PCh T J = 25 C, I F = 2.6, di/dt = 0/µs NCh nc PChannel ƒ PCh 7 T J = 25 C, I F = 2.2, di/dt = 0/µs t on Forward TurnOn Time NP Intrinsic turnon time is neglegible (turnon is dominated by L S L ) Notes: Repetitive rating; pulse width limited by ƒ Pulse width 300µs; duty cycle 2%. max. junction temperature. ( See fig. 23 ) NChannel I S 2.6, di/dt 0/µs, (BR)SS, T J 50 C PChannel I S 2.2, di/dt 50/µs, (BR)SS, T J 50 C pf NChannel GS = 0, S = 5, ƒ =.0MHz PChannel GS = 0, S = 5, ƒ =.0MHz Surface mounted on FR4 board, t sec. ƒ

3 NChannel IRF7307PbF I, raintosource Current () 00 0 GS TOP BOTTOM µs PULSE WITH T J = 25 C 0. 0 S, raintosource oltage () Fig. Typical Output Characteristics I, raintosource Current () 0 T J = 25 C T J = 50 C S = 5 20µs PULSE WITH GS, GatetoSource oltage () Fig 3. Typical Transfer Characteristics C, Capacitance (pf) GS = 0, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C oss = C ds Cgd Ciss Coss Crss 0 0 S, raintosource oltage () Fig 5. Typical Capacitance s. raintosource oltage I, raintosource Current () 00 0 GS TOP BOTTOM µs PULSE WITH T J = 50 C 0. 0 S, raintosource oltage () Fig 2. Typical Output Characteristics R S(on), raintosource On Resistance (Normalized) I = 4.3 GS = T J, Junction Temperature ( C) Fig 4. Normalized OnResistance s. Temperature, GatetoSource oltage () GS I = 2.6 S = 6 FOR TEST CIRCUIT SEE FIGURE Q, Total Gate Charge (nc) G Fig 6. Typical Gate Charge s. GatetoSource oltage

4 NChannel I S, Reverse rain Current () 0 Fig 7. Typical Sourcerain iode Forward oltage 6.0 T J = 50 C T J = 25 C 0. GS = S, Sourcetorain oltage () I, rain Current () 0 OPERTION IN THIS RE LIMITE BY R S(on) 0us ms T = 25 C ms TJ = 50 C Single Pulse 0. 0 S, raintosource oltage () Fig 8. Maximum Safe Operating rea S R I, rain Current () R G GS 4.5 Pulse Width µs uty Factor 0. %.U.T T C, Case Temperature ( C) Fig 9. Maximum rain Current s. mbient Temperature Current Regulator Same Type as.u.t. Fig a. Switching Time Test Circuit S 90% % GS t d(on) t r t d(off) t f 2.2µF 50KΩ.3µF Fig b. Switching Time Waveforms.U.T. S 4.5 Q G GS Q GS Q G 3m I G I Current Sampling Resistors Fig a. Gate Charge Test Circuit G Charge Fig b. Basic Gate Charge Waveform

5 PChannel IRF7307PbF I, raintosource Current () 0 GS TOP BOTTOM.5.5 I, raintosource Current () 0 GS TOP BOTTOM µs PULSE WITH T J = 25 C S, raintosource oltage () Fig 2. Typical Output Characteristics 20µs PULSE WITH 0. T J = 50 C S, raintosource oltage () Fig 3. Typical Output Characteristics I, raintosource Current () 0 T J = 25 C T J = 50 C S = 5 20µs PULSE WITH GS, GatetoSource oltage () Fig 4. Typical Transfer Characteristics C, Capacitance (pf) GS = 0, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C oss = C ds Cgd Ciss Coss Crss 0 0 S, raintosource oltage () Fig 6. Typical Capacitance s. raintosource oltage R S(on), raintosource On Resistance (Normalized) 2.0 I = GS = T J, Junction Temperature ( C) Fig 5. Normalized OnResistance s. Temperature GS, GatetoSource oltage () I = 2.2 S = 6 FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 7. Typical Gate Charge s. GatetoSource oltage

6 I S, Reverse rain Current () 0 Fig 8. Typical Sourcerain iode Forward oltage 5.0 T J = 50 C T J = 25 C GS = S, Sourcetorain oltage () PChannel I I, rain Current () 0 OPERTION IN THIS RE LIMITE BY R S(on) ms T = 25 C ms TJ = 50 C Single Pulse 0 S, raintosource oltage () Fig 9. Maximum Safe Operating rea S R I, rain Current () R G GS 4.5 Pulse Width µs uty Factor 0. %.U.T..0 Fig 2a. Switching Time Test Circuit T C, Case Temperature ( C) Fig 20. Maximum rain Current s. mbient Temperature Current Regulator Same Type as.u.t. S 90% % GS t d(on) t r t d(off) t f 2.2µF 50KΩ.3µF Fig 2b. Switching Time Waveforms.U.T. S 4.5 Q G GS Q GS Q G 3m I G I Current Sampling Resistors Fig 22a. Gate Charge Test Circuit G Charge Fig 22b. Basic Gate Charge Waveform

7 N & PChannel IRF7307PbF 0 Thermal Response (Z thj ) = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj T t, Rectangular Pulse uration (sec) PM t t2 Fig 23. Maximum Effective Transient Thermal Impedance, Junctiontombient

8 Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer ** GS * R G dv/dt controlled by R G I S controlled by uty Factor "".U.T. evice Under Test * * Reverse Polarity for PChannel ** Use PChannel river for PChannel Measurements river Gate rive Period P.W. = P.W. Period [ GS = ] ***.U.T. I S Waveform Reverse Recovery Current Repplied oltage Body iode Forward Current di/dt.u.t. S Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ ] [ ] I S *** GS = 5.0 for Logic Level and 3 rive evices Fig 24. For N and P Channel HEXFETS

9 SO8 Package Outline imensions are shown in milimeters (inches) E 6 6X e B H 0.25 [.0] INCHES IM MIN MX b MILLIMETERS MIN MX c E e.050 BSIC.27 BSIC e.025 BSIC BSIC H K L y e C y K x 45 8X b 0.25 [.0] C B 0. [.004] 8X L 7 8X c NOT ES:. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENS ION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBS TRTE [.255] 3X.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO8 Part Marking Information (LeadFree) EXMPLE: THIS IS N IRF7 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F7 TE COE (YWW) P = ES IGNTES LEFREE PROUCT (OPTIONL) Y = LST IGIT OF T HE YER WW = WEE K = S S EMB LY S ITE COE LOT COE PRT NUMBER

10 SO8 Tape and Reel imensions are shown in milimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) isit us at for sales contact information./04