YJG80G06A. N-Channel Enhancement Mode Field Effect Transistor
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1 RoHS COMPLIANT Top View N-Channel Enhancement Mode Field Effect Transistor PDFN 5X6 8L Bottom View Product Summary V DS I D (at V GS =10V) R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =4.5V) 100% UIS Tested 100% Rg Tested 100% VDS Tested 60V 80A <4.2mΩ <5.2mΩ Top View Pin1 Pin1 General Description Split Gate Trench Power MV MOSFET technology Low R DS(ON) Low Gate Charge Optimized for fast-switching applications Applications Synchronous Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive application Absolute Maximum Ratings (T =25 unless otherwise noted) A Parameter Symbol Maximum Unit Drain-source Voltage V DS 60 V Gate-source Voltage V GS ±20 V Drain Current G T C =25 T C = I D 80 A Pulsed Drain Current C I DM 320 A Avalanche energy L=0.5mH C E AS 450 mj Power Dissipation A T C =25 P DSM T C = W Junction and Storage Temperature Range T J,T STG -55~+150 Thermal Characteristics Junction-to-Ambient A T 10s Parameter Symbol Typ. Max. Unit R θja / W Junction-to-Ambient A D Steady-State / W Junction-to-Case Steady-State R θjc / W Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJG53G06A F reel 1 / 7
2 Electrical Characteristics (T J =25 unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BV DSS V GS = 0V, I D =250μA V Zero Gate Voltage Drain Current I DSS V DS =60V,V GS =0V 1 V DS =60V,V GS =0V,T J =55 5 μa Gate-Body Leakage Current I GSS V GS = ±20V, V DS =0V ±100 na Gate Threshold Voltage V GS(th) V DS = V GS, I D =250μA V Static Drain-Source On-Resistance R DS(ON) V GS = 10V, I D =40A V GS = 4.5V, I D =40A mω Diode Forward Voltage g FS V DS =5V,I D =40A 30 S Diode Forward Voltage V SD I S =40A,V GS =0V V Maximum Body-Diode Continuous Current G I S 80 A Dynamic Parameters Input Capacitance C iss 3980 Output Capacitance C oss V DS =30V,V GS =0V,f=1MHZ 690 pf Reverse Transfer Capacitance C rss 24 Gate Resistance R g V DS =0V,V GS =0V,f=1MHZ 2.5 Ω Switching Parameters Total Gate Charge Q g (10V) 67 Total Gate Charge Q g (4.5V) 32 V GS =10V,V DS =30V,I D =20A Gate Source Charge Q gs 12 nc Gate Drain Charge Q gd 8.5 Turn-on Delay Time t D(on) 15 Turn-on Rise Time t r V GS =10V,V DS =15V,R L =2.5Ω, 8 Turn-off Delay Time t D(off) R GEN =3Ω 48 ns Turn-off Fall Time t f 12 Body Diode Reverse Recovery Time t rr I F =Is,di/dt=500A/us 48 Body Diode Reverse Recovery Charge Q rr I F =Is,di/dt=500A/us 60 nc A. The value of R θja is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The Power dissipation P DSM is based on R θja t 10s and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX) =150 C. D. The R θja is the sum of the thermal impedance from junction to case R θjc and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. 2 / 7
3 Typical Performance Characteristics 3 / 7
4 4 / 7
5 5 / 7
6 PDFN 5X6-8L Package information Symbol Min. Typ. Max A A REF D E D E D E k b e L H / 7
7 Disclaimer The information presented in this document is for reference only. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website or consult your nearest Yangjie s sales office for further assistance. 7 / 7
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