MBN1000FH65G2 Silicon N-channel IGBT 6500V G2 version
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1 Silicon N-channel IGBT 65V G2 version Spec.No.IGBT-SP-1639 R2 P1 FEATURES Low dv/dt noise, low switching loss & low conduction loss Soft low-injection punch-through Novel Side-gate High conductivity IGBT Ultra low driving power due to low input capacitance High dv/dt controllability by low mirror capacitance Low noise recovery: Uitra soft and fast recovery diode High Current rate Package Low Rth(j-c) & low stray inductance RoHS ABSOLUTE MAXIMUM RATINGS (Tc=25 ) Item Symbol Unit Tj=15 o C 6,5 Collector Emitter Voltage Tj=25 o C VCES V 6,5 Tj=-5 o C 5,9 Gate Emitter Voltage VGES V 2 Collector Current DC IC 1, A 1ms ICRM 2, Forward Current DC IF 1, A 1ms IFRM 2, Junction Temperature Tj o C -5 ~ +15 Storage Temperature Tstg o C -5 ~ +15 Isolation Voltage VISO VRMS 1,2(AC 1 minute) Screw Torque Terminals (M4/M8) - 2/1 (1) N m Mounting (M6) - 6 (2) Notes: (1) Recommended Value 1.8±.2/9±1N m ELECTRICAL CHARACTERISTICS (2) Recommended Value 5.5.5N m Item Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES ma - - TBD VCE=6,5V, VGE=V, Tj=25 o C - 8 TBD VCE=6,5V, VGE=V, Tj=15 o C Gate Emitter Leakage Current IGES na VGE= 2V, VCE=V, Tj=25 o C Collector Emitter Saturation Voltage V IC=1,A, VGE=15V, Tj=125 o C VCEsat V TBD IC=1,A, VGE=15V, Tj=15 o C Gate Emitter Threshold Voltage VGE(th) V TBD 6.9 TBD VCE=1V, IC=1,mA, Tj=25 o C Input Capacitance Cies nf VCE=1V, VGE=V, f=1khz, Tj=25 o C Internal Gate Resistance rg Ω VCE=1V, VGE=V, f=1khz, Tj=25 o C Turn On Delay Time td(on) VCC=3,6V, Ic=1,A Rise Time tr VGE= 15V, RG(on/off)=3.3Ω/33Ω (3) s Turn Off Delay Time td(off) Ls=15nH, Tj=15 o C Fall Time tf Peak Forward Voltage Drop VF V IF=1,A, VGE=V Tj=125 o C V TBD IF=1,A, VGE=V Tj=15 o C Reverse Recovery Time trr s VCC=3,6V, IF=1,A, Ls=15nH Tj=15 o C Turn On Loss Eon J/P VCC=3,6V, Ic=1,A Turn Off Loss Eoff J/P VGE= 15V, RG(on/off)=3.3Ω/33Ω (3) Reverse Recovery Loss Err J/P Ls=15nH, Tj=15 o C Partial discharge extinction voltage Ve VRMS 5,1 - - f=5hz, QPD 1pC(acc. to IEC 61287) Stray inductance module LSCE nh Thermal Impedance IGBT Rth(j-c) K/W Junction to case FWD Rth(j-c) Contact Thermal Impedance Rth(c-f) K/W Case to fin Notes: (3) R G value is a test condition value for evaluation, not recommended value. Please determine the suitable R G value by measuring switching behaviors. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. * ELECTRICAL CHARACTERISTIC values shown in above table are according to IEC and IEC
2 Collector Current, IC (A) Forward Current, IF (A) Collector Current, IC (A) Collector Current, IC (A) STATIC CHARACTERISTICS Spec.No.IGBT-SP-1639 R2 P2 18 Tj=25 o C VGE=15V 13V 18 Tj=125 o C VGE=15V 13V V 14 11V V 4 9V V V Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) IC vs. VCE (Tj=25 o C) IC vs. VCE (Tj=125 o C) 18 Tj=15 o C VGE=15V 13V 18 VGE=V Tj = 25 o C V Tj = 125 o C, 15 o C V V Collector - Emitter Voltage VCE (V) Forward Voltage, VF (V) IC vs. VCE (Tj=15 o C) IF vs. VF (Tj=25 o C, 125 o C, 15 o C)
3 Reverse Recovery Loss, Err(J/P) Turn-on Loss, Eon (J/P) Turn-off Loss, Eoff (J/P) DYNAMIC CHARACTERISTICS Spec.No.IGBT-SP-1639 R2 P Vcc=36V Rg(on/off)=3.3Ω/33Ω Ls=15nH Target 2 18 Vcc=36V Rg(on/off)=3.3Ω/33Ω Ls=15nH Target Tj = 15 o C 14 Tj = 15 o C 12 Eon = 1.13E-6*IC E-3*IC E-1 12 Eoff = -1.5E-7*IC E-3*IC E Tj = 25 o C Eon = 7.86E-7*IC E-3*IC E-1 2 Tj = 25 o C Eoff = -7.53E-8*IC E-3*IC E Collector current, IC (A) Collector current, IC (A) Eon vs. IC Eoff vs. IC 2 18 Vcc=36V Rg(on)=3.3Ω Ls=15nH Target Tj = 15 o C Err = -1.54E-6*IF E-3*IF E Tj = 25 o C Err = -8.16E-7*IF E-3*IF E Forward current, IF (A) Err vs. IF
4 Turn-on Loss, Eon (J/pulse) Reverse Recovery Loss, Err (J/pulse) DYNAMIC CHARACTERISTICS Spec.No.IGBT-SP-1639 R2 P VCC=36V IC=A Ls=15nH VCC=36V IC=A Ls=15nH 1 5 Tj = 15 o C Turn-off Loss, Eoff (J/pulse) 1 5 Tj = 15 o C Gate Resistance, RG (Ω) Gate Resistance, RG (Ω) Eon vs. RG Eoff vs. RG 15 VCC=36V IF=A Ls=15nH 1 Tj = 15 o C Gate Resistance, RG (Ω) Err vs. RG
5 Collector Current, IC (A) IR (A) Cies, Coes, Cres (nf) Gate-Emitter Voltage, VGE (V) Spec.No.IGBT-SP-1639 R2 P VCC=36V, Ic=A, Ls=15nH Tj=25 o C 1 Cies 5 1 Coes Cres Collector to Emitter Voltage, VCE (V) Capacitance vs. VCE Gate Charge, QG (uc) QG - VGE Safe Operating Area 3 Target 3 Target Pmax.=3.6MW VCC 3V, VCC 45V, IC 3A, IC A,, RG(off) 3.3Ω, RG(off) 33Ω, o C Tj 15 o C, Ls 165nH, Ls 15nH Pulse width 1us 5 VCC 45V, IF A, di/dt TBD, Tj=15 o C, Ls 15nH Collector - Emitter Voltage, VCE (V) *Defined at auxiliary terminals Reverse bias safe operation area(rbsoa) VR (V) *Defined at auxiliary terminals Reverse recovery safe operation area(rrsoa)
6 Thermal Impedance Zth(j-c) (K/W) Spec.No.IGBT-SP-1639 R2 P6.1 Target Diode.1 IGBT Times t(s) Transient Thermal Impedance Curve Curve Approximation Model Σ rth[n]*(1-exp(-t/τth[n])) n Unit τ th[n] 1.83E E-2 6.4E E-3 sec rth[n,igbt] 5.63E E E E-4 K/W rth[n,diode] 1.2E E E E-4 K/W
7 OUTLINE DRAWING (unit in mm) Spec.No.IGBT-SP-1639 R2 P Weight : 155 (g) CIRCUIT DIAGRAM C C C C G E E E E
8 Spec.No.IGBT-SP-1639 R2 P8 HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement. Or consult Hitachi s sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located Inquiry portion on the top page of a home page. Hitachi power semiconductor home page address
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