TIC246 SERIES SILICON TRIACS
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1 Copyright 997, Power Innovations Limited, UK DECEMBER 97 - REVISED MARCH 997 High Current Triacs 6 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage 5 A Peak Current Max I GT of 50 (Quadrants - 3) MT MT G TO-0 PACKAGE (TOP VIEW) 3 Pin is in electrical contact with the mounting base. MDCACA absolute maximum ratings over operating case temperature (unless otherwise noted) Repetitive peak off-state voltage (see Note ) RATING SYMBOL VALUE UNIT TIC46D TIC46M TIC46S TIC46N Full-cycle RMS on-state current at (or below) 70 C case temperature (see Note ) I T(RMS) 6 A Peak on-state surge current full-sine-wave (see Note 3) I TSM 5 A Peak gate current I GM ± A Operating case temperature range -40 to +0 C Storage temperature range T stg -40 to +5 C Lead temperature.6 mm from case for 0 seconds T L 30 C NOTES:. These values apply bidirectionally for any value of resistance between the gate and Main Terminal.. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70 C derate linearly to 0 C case temperature at the rate of 400 / C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. V DRM electrical characteristics at 5 C case temperature (unless otherwise noted) I DRM V GTM PARAMETER TESONDITIONS MIN TYP MAX UNIT Repetitive peak off-state current Peak gate trigger current Peak gate trigger voltage V D = rated V DRM I G = 0 = 0 C ± V TM Peak on-state voltage I TM = ±.5 A I G = 00 (see Note 4) ±.4 ±.7 V I H Holding current I G = 0 I G = 0 Init I TM = 00 Init I TM = -00 All voltages are with respect to Main Terminal. NOTE 4: This parameter must be measured using pulse techniques, t p = ms, duty cycle %. Voltage-sensing contacts separate from the current carrying contacts are located within 3. mm from the device body V V Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
2 DECEMBER 97 - REVISED MARCH 997 electrical characteristics at 5 C case temperature (unless otherwise noted) (continued) I L dv/dt dv/dt (c) di/dt PARAMETER TESONDITIONS MIN TYP MAX UNIT Latching current Critical rate of rise of off-state voltage Critical rise of commutation voltage Critical rate of rise of on -state current (see Note 5) V D = Rated V D I G = 0 = 0 C ±400 V/µs V D = Rated V D di/dt = 0.5 I T(RMS) /ms V D = Rated V D di G /dt = 50 /µs All voltages are with respect to Main Terminal. NOTE 5: The triacs are triggered by a 5-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 00 Ω, t p(g) = 0 µs, t r = 5 ns, f = khz. thermal characteristics = 80 C I T =.4 I T(RMS) ±. ± V/µs I GT = 50 = 0 C ±00 A/µs PARAMETER MIN TYP MAX UNIT R θjc Junction to case thermal resistance.9 C/W R θja Junction to free air thermal resistance 6.5 C/W TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE 000 TC08AA 0 TC08AB I GT - Gate Trigger Current V supply = ± V R L = 0 W t p(g) = 0 µs V GT - Gate Trigger Voltage - V Figure. Figure. V supply - + } } = ± V R L = 0 W t p(g) = 0 µs
3 DECEMBER 97 - REVISED MARCH 997 TYPICAL CHARACTERISTICS 00 HOLDING CURRENT TC08AD 0 GATE FORWARD VOLTAGE GATE FORWARD CURRENT TC08AC I H - Holding Current - ALL QUADRANTS 0 = ± V I G = 0 Initiating I TM = V GF - Gate Forward Voltage - V 0 I A = 0 = 5 C QUADRANT I GF - Gate Forward Current - A Figure 3. Figure LATCHING CURRENT TC08AE I L - Latching Current V supply = ± V Figure 5. 3
4 DECEMBER 97 - REVISED MARCH 997 TO-0 3-pin plastic flange-mount package MECHANICAL DATA This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO0 4,70 4,0 3,96 0,4,3 ø 3,7 0,0,95,3,54 see Note B 6,6 6,0 5,90 4,55 see Note C 6, 3,5 0,97 0,6 3,70,07 4,,7,74,34 0,64 0,4 5,8 4,88,90,40 VERSION VERSION ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version, 8.0 mm. Version, 7.6 mm. MDXXBE 4
5 DECEMBER 97 - REVISED MARCH 997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright 997, Power Innovations Limited 5
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