PINNING - SOT186 PIN CONFIGURATION SYMBOL
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1 F series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a full pack SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high F bidirectional transient and blocking F 5F 6F 8F voltage capability and high thermal F 5G 6G 8G cycling performance. Typical V DRM Repetitive peak offstate applications include motor control, voltages V industrial and domestic lighting, I T(RMS) RMS onstate current A heating and static switching. I TSM Nonrepetitive peak onstate A current PINNING SOT86 PIN CONFIGURATION SYMBOL PIN DESCRIPTION main terminal main terminal case T T 3 gate case isolated 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DRM Repetitive peak offstate V voltages I T(RMS) RMS onstate current full sine wave; T hs 73 C 8 A I TSM Nonrepetitive peak full sine wave; T j = 5 C prior onstate current to surge; with reapplied V DRM() t = ms 55 A I t I t for fusing t = 6.7 ms t = ms 6 5 A A s di T /dt Repetitive rate of rise of I TM = A; I G =. A; onstate current after triggering di G /dt =. A/µs T+ G+ 5 A/µs T+ G 5 A/µs T G T G+ 5 A/µs A/µs I GM Peak gate current A V GM Peak gate voltage 5 V P GM Peak gate power 5 W P G(AV) Average gate power over any ms period.5 W T stg Storage temperature 4 5 C T j Operating junction 5 C temperature Although not recommended, offstate voltages up to 8V may be applied without damage, but the triac may switch to the onstate. The rate of rise of current should not exceed 6 A/µs. February 996 Rev.
2 F series ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 5 C unless otherwise specified V isol Repetitive peak voltage from all three terminals to external R.H. 65% ; clean and dustfree 5 V heatsink C isol Capacitance from T to external heatsink f = MHz pf THERMAL RESISTANCES R th jhs Thermal resistance full or half cycle junction to heatsink with heatsink compound 4.5 K/W without heatsink compound 6.5 K/W R th ja Thermal resistance in free air 55 K/W junction to ambient STATIC CHARACTERISTICS T j = 5 C unless otherwise stated F......F...G I GT Gate trigger current V D = V; I T =. A T+ G T+ G T G T G I L Latching current V D = V; I GT =. A T+ G+ T+ G T G I H Holding current T G V D = V; I GT =. A 5 4 V T Onstate voltage I T = A.3.65 V V GT Gate trigger voltage V D = V; I T =. A.7.5 V V D = 4 V; I T =. A;.5.4 V T j = 5 C I D Offstate leakage current V D = V DRM() ;..5 T j = 5 C February 996 Rev.
3 F series DYNAMIC CHARACTERISTICS T j = 5 C unless otherwise stated F......F...G dv D /dt Critical rate of change of V DM = 67% V DRM() ; 5 5 V/µs offstate voltage T j = 5 C; exponential waveform; gate open circuit dv com /dt Critical rate of change of V DM = 4 V; T j = 95 C; V/µs commutating voltage I T(RMS) = 8 A; di com /dt = 3.6 A/ms; gate open circuit t gt Gate controlled turnon I TM = A; V D = V DRM() ; µs time I G =. A; di G /dt = 5 A/µs February Rev.
4 Philips Semiconductors F series Ptot / W Ths() / C 7 = 8 IT(RMS) / A X C IT(RMS) / A Fig.. Maximum onstate dissipation, P tot, versus rms onstate current, I T(RMS), where α = conduction angle Ths / C Fig.4. Maximum permissible rms current I T(RMS), versus heatsink temperature T hs. ITSM / A IT ITSM IT(RMS) / A 5 T time Tj initial = 5 C 5 di /dt limit T T G+ quadrant 5 us us ms ms ms T / s Fig.. Maximum permissible nonrepetitive peak onstate current I TSM, versus pulse width t p, for sinusoidal currents, t p ms... surge duration / s Fig.5. Maximum permissible repetitive rms onstate current I T(RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; T hs 73 C. ITSM / A 6 5 IT T I TSM time.6.4 VGT(Tj) VGT(5 C) BT36 4 Tj initial = 5 C Number of cycles at 5Hz Fig.3. Maximum permissible nonrepetitive peak onstate current I TSM, versus number of cycles, for sinusoidal currents, f = 5 Hz Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT (5 C), versus junction temperature T j. February Rev.
5 F series 3.5 IGT(Tj) IGT(5 C) T+ G+ T+ G T G T G+ IT / A 5 Tj = 5 C Tj = 5 C 5 Vo =.64 V Rs =.378 Ohms typ Fig.7. Normalised gate trigger current I GT (T j )/ I GT (5 C), versus junction temperature T j VT / V Fig.. Typical and imum onstate characteristic IL(Tj) IL(5 C) TRIAC Zth jhs (K/W) with heatsink compound without heatsink compound unidirectional bidirectional. P D t p Fig.8. Normalised latching current I L (T j )/ I L (5 C), versus junction temperature T j.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th jhs, versus pulse width t p. t 3.5 IH(Tj) IH(5C) TRIAC dv/dt (V/us) offstate dv/dt limit...g SERIES SERIES...F SERIES.5 dicom/dt = A/ms Fig.9. Normalised holding current I H (T j )/ I H (5 C), versus junction temperature T j. 5 5 Fig.. Typical commutation dv/dt versus junction temperature, parameter commutation di T /dt. The triac should commutate when the dv/dt is below the value on the appropriate curve for precommutation di T /dt. February Rev.
6 F series MECHANICAL DATA Dimensions in mm Net Mass: g seating plane not tinned min 3.4 M top view Fig.3. SOT86; The seating plane is electrically isolated from all terminals. Notes. Accessories supplied on request: refer to mounting instructions for Fpack envelopes.. Epoxy meets UL94 V at /8". February Rev.
7 F series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February Rev.
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