FEATURES SYMBOL QUICK REFERENCE DATA

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1 FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Very low on-state resistance Fast switching Low thermal resistance V DSS = 5 V I D = 75 A R DS(ON) 4.3 mω (V GS = V) R DS(ON) 5 mω (V GS = 5 V) GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:- d.c. to d.c. converters switched mode power supplies The PSMN4-5P is supplied in the SOT78 (TOAB) conventional leaded package. The PSMN4-5B is supplied in the SOT4 surface mounting package. PINNING SOT78 (TOAB) SOT4 (D PAK) PIN gate drain DESCRIPTION g tab d s tab 3 source tab drain 3 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DSS Drain-source voltage T j = 5 C to 75 C - 5 V V DGR Drain-gate voltage T j = 5 C to 75 C; R GS = kω - 5 V V GS Continuous gate-source - ± 5 V voltage V GSM Peak pulsed gate-source T j C - ± V voltage I D Continuous drain current T mb = 5 C; V GS = 5 V - 75 A T mb = C; V GS = 5 V - 75 A I DM Pulsed drain current T mb = 5 C - A P D Total power dissipation T mb = 5 C - W T j, T stg Operating junction and C storage temperature It is not possible to make connection to pin: of the SOT4 package maximum continuous current limited by package October 999 Rev.

2 THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction K/W to mounting base R th j-a Thermal resistance junction SOT78 package, vertical in still air - - K/W to ambient SOT4 package, pcb mounted, minimum - - K/W footprint AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT E AS Non-repetitive avalanche Unclamped inductive load, I AS = 75 A; - mj energy t p = µs; T j prior to avalanche = 5 C; V DD 5 V; R GS = Ω; V GS = 5 V I AS Non-repetitive avalanche - 75 A current ELECTRICAL CHARACTERISTICS T j = 5 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = V; I D =.5 ma; V voltage T j = -55 C - - V V GS(TO) Gate threshold voltage V DS = V GS ; I D = ma.5 V T j = 75 C V T j = -55 C V R DS(ON) Drain-source on-state V GS = V; I D = 5 A mω resistance V GS = 5 V; I D = 5 A mω V GS = 4.5 V; I D = 5 A mω V GS = 5 V; I D = 5 A; T j = 75 C mω I GSS Gate-source leakage current V GS = ± V; V DS = V; -. na I DSS Zero gate voltage drain V DS = 5 V; V GS = V; -.5 µa current T j = 75 C - - µa Q g(tot) Total gate charge I D = 75 A; V DD = 5 V; V GS = 5 V nc Q gs Gate-source charge - - nc Q gd Gate-drain (Miller) charge nc t d on Turn-on delay time V DD = 5 V; R D =. Ω ns t r Turn-on rise time V GS = 5 V; R G = 5.6 Ω - - ns t d off Turn-off delay time Resistive load ns t f Turn-off fall time - - ns L d Internal drain inductance Measured tab to centre of die nh L d Internal drain inductance Measured from drain lead to centre of die nh (SOT78 package only) L s Internal source inductance Measured from source lead to source nh bond pad C iss Input capacitance V GS = V; V DS = V; f = MHz - - pf C oss Output capacitance - - pf C rss Feedback capacitance - - pf October 999 Rev.

3 REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 5 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current A (body diode) I SM Pulsed source current (body - - A diode) V SD Diode forward voltage I F = 5 A; V GS = V V I F = 75 A; V GS = V -. - t rr Reverse recovery time I F = A; -di F /dt = A/µs; - - ns Q rr Reverse recovery charge V GS = V; V R = 5 V - - µc October Rev.

4 Normalised Power Derating, PD (%) Mounting Base temperature, Tmb (C) Fig.. Normalised power dissipation. PD% = P D /P D 5 C = f(t mb ).. Transient thermal impedance, Zth j-mb (K/W) D = single pulse T. E-6 E-5 E-4 E-3 E- E- E+ Pulse width, tp (s) P D Fig.4. Transient thermal impedance. Z th j-mb = f(t); parameter D = t p /T tp D = tp/t Normalised Current Derating, ID (%) Mounting Base temperature, Tmb (C) Fig.. Normalised continuous drain current. ID% = I D /I D 5 C = f(t mb ) Drain Current, ID (A) V 5 V 4.5 V.8 V Tj = 5 C VGS =.6 V.4 V. V.8 V Drain-Source Voltage, VDS (V) Fig.5. Typical output characteristics, T j = 5 C. I D = f(v DS ) V Peak Pulsed Drain Current, IDM (A) RDS(on) = VDS/ ID tp = us us Drain-Source On Resistance, RDS(on) (Ohms)..8 V. V.4 V.6 V.6.4 ms. D.C. ms ms Drain-Source Voltage, VDS (V) Fig.3. Safe operating area. T mb = 5 C I D & I DM = f(v DS ); I DM single pulse; parameter t p Tj = 5 C VGS = V Drain Current, ID (A) Fig.6. Typical on-state resistance, T j = 5 C. R DS(ON) = f(i D ) 5 V.8 V 4.5 V October Rev.

5 Drain current, ID (A) VDS > ID X RDS(ON) 75 C Tj = 5 C Gate-source voltage, VGS (V) Fig.7. Typical transfer characteristics. I D = f(v GS ) Threshold Voltage, VGS(TO) (V) maximum typical minimum Junction Temperature, Tj (C) Fig.. Gate threshold voltage. V GS(TO) = f(t j ); conditions: I D = ma; V DS = V GS Transconductance, gfs (S) VDS > ID X RDS(ON) Tj = 5 C.E- Drain current, ID (A) VDS = 5 V.E- 75 C.E-3.E-4 minimum typical maximum.e-5 Drain current, ID (A) Fig.8. Typical transconductance, T j = 5 C. g fs = f(i D ).E Gate-source voltage, VGS (V) Fig.. Sub-threshold drain current. I D = f(v GS) ; conditions: T j = 5 C; V DS = V GS Normalised On-state Resistance Junction temperature, Tj (C) Fig.9. Normalised drain-source on-state resistance. R DS(ON) /R DS(ON)5 C = f(t j ) Capacitances, Ciss, Coss, Crss (pf) Ciss Coss Crss. Drain-Source Voltage, VDS (V) Fig.. Typical capacitances, C iss, C oss, C rss. C = f(v DS ); conditions: V GS = V; f = MHz October Rev.

6 Gate-source voltage, VGS (V) ID = 75 A VDD = 5 V Tj = 5 C Gate charge, QG (nc) Fig.3. Typical turn-on gate-charge characteristics. V GS = f(q G ) Maximum Avalanche Current, I AS (A) Tj prior to avalanche = C 5 C... Avalanche time, t AV (ms) Fig.5. Maximum permissible non-repetitive avalanche current (I AS ) versus avalanche time (t AV ); unclamped inductive load Source-Drain Diode Current, IF (A) VGS = V 75 C Tj = 5 C Source-Drain Voltage, VSDS (V) Fig.4. Typical reverse diode current. I F = f(v SDS ); conditions: V GS = V; parameter T j October Rev.

7 MECHANICAL DATA Plastic single-ended package; heatsink mounted; mounting hole; 3-lead TO- SOT78 E P A A q D D L () L Q L b 3 b c e e 5 mm scale DIMENSIONS (mm are the original dimensions) () UNIT A A b b c D D E e L L L P max mm q 3..7 Q.6. Note. Terminals in this zone are not tinned. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT78 TO Fig.6. SOT78 (TOAB); pin connected to mounting base (Net mass:g) Notes. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling.. Refer to mounting instructions for SOT78 (TOAB) package. 3. Epoxy meets UL94 V at /8". October Rev.

8 MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D -PAK); 3 leads (one lead cropped) SOT4 A E A D mounting base D H D 3 L p b c e e Q.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A D A b c max. D E e L p H D Q OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT Fig.7. SOT4 surface mounting package. Centre pin connected to mounting base. Notes. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling.. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC8. 3. Epoxy meets UL94 V at /8". October Rev.

9 MOUNTING INSTRUCTIONS Dimensions in mm Fig.8. SOT4 : soldering pattern for surface mounting. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October Rev.