UNISONIC TECHNOLOGIES CO., LTD
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1 UT3 UNISONIC TECHNOLOGIES CO., LTD S LOGIC LEVEL DESCRIPTION Passivated, sensitive gate triaces in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers. logic integrated circuits and other low power gate trigger circuits. SYMBOL MT SOT-3 TO-9 G MT ORDERING INFORMATION Ordering Number Pin Assignment Package Normal Lead Free Halogen Free 3 Packing UT3-5-T9-B UT3L-5-T9-B UT3L-5-T9-B TO-9 MT GATE MT Tape Box UT3-5-T9-K UT3L-5-T9-K UT3L-5-T9-K TO-9 MT GATE MT Bulk UT3-6-T9-B UT3L-6-T9-B UT3L-6-T9-B TO-9 MT GATE MT Tape Box UT3-6-T9-K UT3L-6-T9-K UT3L-6-T9-K TO-9 MT GATE MT Bulk UT3-8-T9-B UT3L-8-T9-B UT3L-8-T9-B TO-9 MT GATE MT Tape Box UT3-8-T9-K UT3L-8-T9-K UT3L-8-T9-K TO-9 MT GATE MT Bulk UT3-5-AA3-R UT3L-5-AA3-R UT3G-5-AA3-R SOT-3 MT MT GATE Tape Reel UT3-6-AA3-R UT3L-6-AA3-R UT3G-6-AA3-R SOT-3 MT MT GATE Tape Reel UT3-8-AA3-R UT3L-8-AA3-R UT3G-8-AA3-R SOT-3 MT MT GATE Tape Reel UT3L- X -T9-B ()Packing Type ()Package Type (3)Peak Voltage (4)Lead Free () R:Tape Reel, B: Tape Box, K: Bulk () AA3: SOT-3, T9: TO-9 (3) 5: 5V, 6: 6V, 8: 8V (4) G:Halogen Free, L: Lead Free, Blank: Pb/Sn of 5 Copyright Unisonic Technologies Co., Ltd QW-R4-6.E
2 UT3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT UT3-5 5(Note ) V Repetitive Peak Off-State Voltage UT3-6 V DRM 6(Note ) V UT3-8 8(Note ) V RMS On-State Current, Full Sine Wave; Tlead 5 I T(RMS) A Non-Repetitive Peak On-State Current t=ms 6 A I (Full Sine Wave; T J =5 Prior to Surge) TSM t=6.7ms 7.6 A Circuit Fusing t=ms I t.8 A s T + G + 5 A/μs Repetitive Rate of Rise of On-State Current after T + G - 5 A/μs Triggering di T /dt T G - 5 A/μs I TM =.5A, I G =.A, di G /dt=.a/μs T G + A/μs Peak Gate Voltage V GM 5 V Peak Gate Current I GM A Peak Gate Power P GM 5 W Average Gate Power (over any ms period) P G(AV).5 W Junction Temperature T J +5 Storage Temperature T STG -4 ~ +5 Note:. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.. Although not recommended, off-state voltages up to 8V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/μs. THERMAL RESISTANCES PARAMETER SYMBOL MIN TYP MAX UNIT Thermal Resistance Junction to Lead Full Cycle 6 K/W θ JLEAD Half Cycle 8 K/W Thermal Resistance junction to Ambient (Note) θ JA 5 K/W Note: PCB mounted; lead length=4mm ELECTRICAL CHARACTERISTICS (T J =5, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT T + G ma Gate Trigger Current I GT V D =V, I T =.A T + G ma T G ma T G ma T + G +. 5 ma Latching Current I L V D =V, I GT =.A T + G ma T G -. 5 ma T G ma Holding Current I H V D =V, I GT =.A.3 5 ma On -State Voltage V T I T =.A..5 V Gate Trigger Voltage V GT V D =V, I T =.A.7.5 V V D =4V, I T =.A, T J =5..3 V Off-State Leakage Current I D V D =V DRM(MAX), T J =5..5 ma DYNAMIC CHARACTERISTICS (T J =5, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Critical Rate of Rise of off-state Voltage dv D /dt V DM =67% V DRM(MAX), T J =5 Exponential waveform, R GK =kω 5 5 V/μs Gate Controlled Turn-on Time t gt I TM =.5A, V D =V DRM(MAX), I G =.A di G /dt=5a/μs μs UNISONIC TECHNOLOGIES CO., LTD of 5 QW-R4-6.E
3 UT3 TYPICAL CHARACTERISTICS Maximum on-state Dissipation, PD/W Maximum Permissible Non-Repetitive Peak On-State Current, ITSM/A Maximum Permissible Non-Repetitive Peak On-State Current vs. Number of Cycles, for Sinusoidal Currents Maximum Permissible RMS Current I T(RMS) vs. Lead Temperature Maximum Permissible Non- Repetitive Peak On-State Current, ITSM/A Number of Cycles at 5Hz I T I TSM time T J initial=5 max Maximum Permissible RMS Current, IT(RMS)/A Lead Temperature, Tsp/ Maximum Permissible Repetitive RMS on-state Current, IT(RMS)/A Normalised Gate Trigger Voltage, VGT(TJ)/VGT(5 ) UNISONIC TECHNOLOGIES CO., LTD 3 of 5 QW-R4-6.E
4 UT3 TYPICAL CHARACTERISTICS(Cont.) Normalised Gate Trigger Current, IGT(TJ)/IGT(5 ) Normalised Gate Trigger Current vs. Junction Temperature T+G+ T+G- T-G- T-G Normalised Latching Current, IL(TJ)/IL(5 ) Normalised Latching Current vs. Junction Temperature Transient Thermal Impedance vs. Pulse Width Typical Critical Rate of Rise of off-state Voltage vs. Junction Temperature unidirectional bidirectional. P D t p. us.ms ms t ms.s s s 5 5 Pulse Width, t p /s UNISONIC TECHNOLOGIES CO., LTD 4 of 5 QW-R4-6.E
5 UT3 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5 QW-R4-6.E
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD S LOGIC LEVEL DESCRIPTION Passivated, sensitive gate triaces in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications.
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UNISONIC TECHNOLOGIES CO., LTD DESCRIPTION Glass passivated, sensitive gate triacs in a full pack plastic envelope, intended for use in general purpose bidirectional switching and phase control applications,
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UNISONIC TECHNOLOGIES CO., LTD 24A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching
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UNISONIC TECHNOLOGIES CO., LTD 1.5A ADJUSTABLE/FIXED LOW DROPOUT LINEAR REGULATOR DESCRIPTION The UTC UZ186 and UZ186-1.2V, 1.8V, 2.5V, 2.85V, 3.3V and 5V are low dropout three-terminal regulators with
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UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.
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UNISONIC TECHNOLOGIES CO., LTD UTT6NZ 6A, V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6NZ is a N-channel enhancement mode Power FET, it uses UTC s advanced technology to provide customers a minimum
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UNISONIC TECHNOLOGIES CO., LTD 16A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS
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6N9 UNISONIC TECHNOLOGIES CO., LTD 6.2A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N9 is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide costumers with planar
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UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET 20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 20NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics,
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UNISONIC TECHNOLOGIES CO., LTD 4 Amps, 3 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT4N3 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance
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UNISONIC TECHNOLOGIES CO., LTD 78DXX 3-TERMINALS 0.5A POSITIVE VOLTAGE REGULATOR DESCRIPTION The UTC 78DXX family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V RRM. half sine wave; T sp 112 C; Fig A
4 September 8 Product data sheet. General description Planar passivated with sensitive gate in a SOT3 (SC-73) surface mountable plastic package. These devices are intended to be interfaced directly to
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UNISONIC TECHNOLOGIES CO., LTD 13NM50-U2 13A, 500V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM50-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such
More informationIMPORTANT NOTICE. 1. Global joint venture starts operations as WeEn Semiconductors. 10 December 2015
IMPORTANT NOTICE 1 December 15 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 15 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co.
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UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
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UNISONIC TECHNOLOGIES CO., LTD 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
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UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
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UNISONIC TECHNOLOGIES CO., LTD UT4435-8.8A, -30V P-CHANNEL POWER MOSFET DESCRIPTION The UT4435 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate
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UNISONIC TECHNOLOGIES CO., LTD 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge,
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UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers
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