ORDERING INFORMATION

Size: px
Start display at page:

Download "ORDERING INFORMATION"

Transcription

1 The LM555/I is a highly stable controller capable of producing accurate timing pulses. With monostable operation, the time delay is controlled by one external and one capacitor. With astable operation, the frequency and duty cycle are accurately controlled with two external resistors and one capacitor. 8 DIP FEATURES High Current Drive Capability (= 200mA) Adjustable Duty Cycle Temperature Stability of 0.005%/ C Timing From µsec To Hours Turn Off Time Less Than 2µSec 8 SOP APPLICATIONS Precision Timing Pulse Generation Time Delay Generation Sequential Timing ORDERING INFORMATION Device Package Operating Temperature LM555CN (NE555N) (KA555) 8 DIP LM555CM (KA555D) 8 SOP KA555I 8 DIP KA555ID 8 SOP 0 ~ +70 C -40 ~ +85 C BLOCK DIAGRAM Rev. C 1999 Fairchild Semiconductor Corporation

2 ABSOLUTE MAXIMUM RATINGS (T A = 25 C) Characteristic Symbol alue Unit Supply oltage CC 16 Lead Temperature (soldering 10sec) T LEAD 300 C Power Dissipation P D 600 mw Operating Temperature Range LM555C 0 ~ + 70 C T OPR LM555CI - 40 ~ + 85 C Storage Temperature Range T STG - 65 ~ C ELECTRICAL CHARACTERISTICS (T A = 25 C, CC = 5 ~ 15, unless otherwise specified) Characteristic Symbol Test Conditions Min Typ Max Unit Supply oltage CC Supply Current CC = 5, R L = 3 6 ma 1 (low stable) CC = 15, R L = ma Timing Error (Monostable) 2 Initial Accuracy Drift with Temperature Drift with Supply oltage Timing Error (astable) 2 Intial Accuracy Drift with Temperature Drift with Supply oltage Control oltage Threshold oltage I CC ACCUR t/ T t/ CC ACCUR t/ T t/ CC C TH R A = 1KΩ to 100KΩ C = 0.1µF R A = 1KΩ to 100KΩ C = 0.1µF % ppm/ C %/ % ppm/ C %/ CC = CC = CC = CC = Threshold Current I TH µa Trigger oltage TR CC = Trigger oltage TR CC = Trigger Current I TR TR = µa Reset oltage RST Reset Current I RST ma

3 ELECTRICAL CHARACTERISTICS (T A = 25 C, CC = 5 ~ 15, unless otherwise specified) Notes: Characteristic Low Output oltage High Output oltage Symbol OL OH Test Conditions CC = 15 I SINK = 10mA I SINK = 50mA Min Typ Max Unit 1. Supply current when output is high is typically 1mA less at CC = 5 2. Tested at CC = 5.0 and CC = This will determine maximum value of R A + R B for 15 operation, the max. total R = 20MΩ, and for 5 operation the max. total R = 6.7MΩ CC = 5 I SINK = 5mA CC = 15 I SOURCE = 200mA I SOURCE = 100mA CC = 5 I SOURCE = 100mA Rise Time of Output t R 100 ns Fall Time of Output t F 100 ns Discharge Leakage Current I LKG na APPLICATION CIRCUIT

4 APPLICATION NOTE The application circuit shows astable mode. Pin 6 (threshold) is tied to Pin 2 (trigger) and Pin 4 (reset) is tied to CC (Pin 8). The external capacitor C 1 of Pin 6 and Pin 2 charges through R A, R B and discharges through R B only. In the internal circuit of the LM555 one input of the upper comparator is the 2/3 CC ( R 1 =R 2=R 3, another input if it If it is connected Pin 6. As soon as charging C 1 is higher than 2/3 cc, discharge transistor Q 1 turns on and C 1 discharges to collector of transistor Q 1. Therefore, the flip-flop circuit is reset and output is low. One input of lower comparator is the 1/3 CC, discharge transistor Q 1 turn off and C 1 charges through R A and R B. Therefore, the flip-flop circuit is set and output is high. So to say, when C 1 charges through R A and R 1 output is high and when C 1 discharges through R B output is low. The charge time (output is high) T 1 is (R A+R B) C 1 and the discharge time (output is low) T 2 is (R B C 1). (I CC-1/3 n = 0.693) CC CC-2/3 CC Thus the total period time T is given by T=T 1 +T 2 = (R A +2R B) C 1. Then the frequency of astable mode is given by f = = 1 T 1.44 (R A + 2R B)C 1 The duty cycle is given by T 2 D.C = = T R B R A + 2R B If you make use of the LM556 you can make two astable modes.

5 Astable Operation The LM555 can free run as a mulitivibrator by triggering itself; refer to Fig.2. The output can swing from DD to GND and have 50 duty cycle square wave. Less than 1% frequency deviation can be observed, over a voltage range of 2 to 5. f-1/1.4rc Fig. 1. Astable Operation CC GND 1 8 CC 10KΩ / / / OUTPUT TRIGGER 2 3 LM555C 7 6 DISCHARGE THRESHOLD ALTERNATE OUTPUT CC RESET 4 5 C Monostable Operation / / / The LM555 can be used as a one-short, i.e. monostable multivibrator. Initially, because the inside discharge transistor is on state, external timing capacitor is held to GND potential. Upon application of a negative TRIGGER pulse pin 2, the intern discharge transistor is off state and the voltage across the capacitor increases with time constant T = R AC and OUTPUT goes to high state. When the voltage across the capacitor equals 2/3 CC the inner comparator is reset by THRESHOLD input and the discharge transistor goes to on state, which in turn discharges the capacitor rapidly and drives the OUTPUT to its low state. Fig. 2. Monostable Operation CC ( 18) 1 8 R A / / / TRIGGER OUTPUT 2 3 LM555C 7 6 DISCHARGE THRESHOLD RESET 4 5 CONTROL OLTAGE OPTION CAPACITOR C / / / / / /

6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx CoolFET CROSSOLT E 2 CMOS FACT FACT Quiet Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 TinyLogic UHC CX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

KA239, LM339/A (KA339/A), LM2901 (KA2901), KA3302

KA239, LM339/A (KA339/A), LM2901 (KA2901), KA3302 QUAD DIFFERENTIAL COMPARATOR The LM/KA239 series consists of four independent voltage comparators designed to operate from single power supply over a wide voltage range. FEATURES Single or dual supply

More information

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω KSE3006/3007 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3006/3007 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum

More information

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009 KSE3008/3009 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3008/3009 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum

More information

SINGLE OPERATIONAL AMPLIFIERS FEATURES SCHEMATIC DIAGRAM 8 DIP

SINGLE OPERATIONAL AMPLIFIERS FEATURES SCHEMATIC DIAGRAM 8 DIP S The KA741 series are general purpose operational amplifiers which feature improved performance over industry standards like the KA709. It is intended for a wide range of analog applications. The high

More information

BDW94/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C

BDW94/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C Power Linear and Switching Applications Power Darlington TR Complement to BDW93, BDW93A, BDW93B and BDW93C respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum

More information

QUAD OPERATIONAL AMPLIFIERS FEATURES. SCHEMATIC DIAGRAM (One Section Only)

QUAD OPERATIONAL AMPLIFIERS FEATURES. SCHEMATIC DIAGRAM (One Section Only) S The LM248/LM348 is a true quad LM741. It consists of four independent, high-gain, internally compensated, low-power operational amplifiers which have been designed to provide functional characteristics

More information

BDX53/A/B/C BDX53/A/B/C. NPN Epitaxial Silicon Transistor

BDX53/A/B/C BDX53/A/B/C. NPN Epitaxial Silicon Transistor Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively 1 TO-220 NPN Epitaxial Silicon Transistor

More information

Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. G S D 2N5457 2N5458 2N5459 TO-92 This device is a low level audio amplifier

More information

Characteristic Value Units Drain-to-Source Voltage. 28 Continuous Drain Current (T C =100 C)

Characteristic Value Units Drain-to-Source Voltage. 28 Continuous Drain Current (T C =100 C) $GYDQFHG 3RZHU 026)(7 IRL540A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10µA (Max.)

More information

VOLTAGE-MODE PWM CONTROLLER FEATURES ORDERING INFORMATION BLOCK DIAGRAM 16-DIP

VOLTAGE-MODE PWM CONTROLLER FEATURES ORDERING INFORMATION BLOCK DIAGRAM 16-DIP VOLTAGE-MODE PWM CONTROLLER The KA7500B is used for the control circuit of the pulse width modulation switching regulator. The KA7500B consists of 5V reference voltage circuit, two error amplifiers, flip

More information

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TA = 25 C unless otherwise noted. Symbol Parameter Value Units G S D PN PN PN TO-92 This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance

More information

MJD31/31C. Symbol Parameter Value Units V CBO Collector-Base Voltage : MJD31 : MJD31C

MJD31/31C. Symbol Parameter Value Units V CBO Collector-Base Voltage : MJD31 : MJD31C MJD3/3C MJD3/3C General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP3 and

More information

TIS73/TIS74 TIS73/TIS74

TIS73/TIS74 TIS73/TIS74 TIS73/ TIS73/ N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 4. Absolute Maximum

More information

MJE170/171/172 MJE170/171/172. PNP Epitaxial Silicon Transistor. Low Power Audio Amplifier Low Current, High Speed Switching Applications

MJE170/171/172 MJE170/171/172. PNP Epitaxial Silicon Transistor. Low Power Audio Amplifier Low Current, High Speed Switching Applications Low Power Audio Amplifier Low Current, High Speed Switching Applications PNP Epitaxial Silicon Transistor 1 TO-126 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings T C =25 C unless otherwise noted

More information

KSA1220/1220A. Symbol Parameter Ratings Units V CBO Collector-Base Voltage : KSA1220 : KSA1220A V CEO Collector-Emitter Voltage : KSA1220 : KSA1220A

KSA1220/1220A. Symbol Parameter Ratings Units V CBO Collector-Base Voltage : KSA1220 : KSA1220A V CEO Collector-Emitter Voltage : KSA1220 : KSA1220A Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A TO-26. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C unless

More information

KSP42/43. Symbol Parameter Value Units V CBO V V V CEO

KSP42/43. Symbol Parameter Value Units V CBO V V V CEO High oltage Transistor Collector-Emitter oltage: CEO =KSP42: KSP43: Collector Power Dissipation: P C (max)=625mw NPN Epitaxial Silicon Transistor TO-92. Emitter 2. Base 3. Collector Absolute Maximum Ratings

More information

KSA1156. Symbol Parameter Test Condition Min. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage I C = - 100mA, I B = - 10mA

KSA1156. Symbol Parameter Test Condition Min. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage I C = - 100mA, I B = - 10mA High Voltage Switching Low Power Switching Regulator DC-DC Converter High Breakdown Voltage Low Collector Saturation Voltage High Speed Switching 1 TO-126 1. Emitter 2.Collector 3.Base PNP Silicon Transistor

More information

J108/J109/J110/MMBFJ108

J108/J109/J110/MMBFJ108 N-Channel Switch This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from Process 8. J8/J9/J/MMBFJ8 TO-92. Drain 2. Source 3. Gate 3 2 SuperSOT-3

More information

FEATURES BV DSS. Characteristic Value Units Drain-to-Source Voltage. 115 Continuous Drain Current (T C =100 )

FEATURES BV DSS. Characteristic Value Units Drain-to-Source Voltage. 115 Continuous Drain Current (T C =100 ) NChannel Small Signal MOSFET 2N7002MTF FEATURES B DSS = 60! Lower R DS(on)! Improved Inductive Ruggedness! Fast Switching Times! Lower Input Capacitance! Extended Safe Operating Area! Improved High Temperature

More information

BI-DIRECTIONAL DC MOTOR DRIVER FEATURES ORDERING INFORMATION TARGET APPLICATIONS BLOCK DIAGRAM

BI-DIRECTIONAL DC MOTOR DRIVER FEATURES ORDERING INFORMATION TARGET APPLICATIONS BLOCK DIAGRAM VCR PRODUCTS BI-DIRECTIONAL DC MOTOR DRIVER The is a monolithic integrated circuit designed for driving bi-directional DC motor with braking and speed control, and it is suitable for the loading motor

More information

FJL6820. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case C/W

FJL6820. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case C/W High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V Low Saturation Voltage : (sat) = 3V (Max.) For Color Monitor NPN Triple Diffused Planar Silicon

More information

FJN13003 FJN NPN Silicon Transistor Planar Silicon Transistor

FJN13003 FJN NPN Silicon Transistor Planar Silicon Transistor FJN3003 FJN3003 High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 2W NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings T C =25 C unless

More information

VOLTAGE STABILIZER SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT VOLTAGE STABILIZER FOR ELECTRONIC TUNER FEATURES ABSOLUTE MAXIMUM RATINGS (T A= 25Î)

VOLTAGE STABILIZER SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT VOLTAGE STABILIZER FOR ELECTRONIC TUNER FEATURES ABSOLUTE MAXIMUM RATINGS (T A= 25Î) SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT FOR ELECTRONIC TUNER TO-9 The is a monolithic integrated voltage stabilizer especially designed as voltage supplier for electronic tuners. FEATURES Low Temperature

More information

= 25 o C unless other wise noted Symbol Parameter NDS9945 Units V DSS. Drain-Source Voltage 60 V V GSS. Gate-Source Voltage ±20 V I D

= 25 o C unless other wise noted Symbol Parameter NDS9945 Units V DSS. Drain-Source Voltage 60 V V GSS. Gate-Source Voltage ±20 V I D May 998 N9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

More information

Features TO-264 E. Symbol Description SGL40N150D Units V CES Collector-Emitter Voltage 1500 V V GES Gate-Emitter Voltage ± 25 V Collector T

Features TO-264 E. Symbol Description SGL40N150D Units V CES Collector-Emitter Voltage 1500 V V GES Gate-Emitter Voltage ± 25 V Collector T SGLN5D September 2 IGBT SGLN5D General Description Fairchild s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGLN5D is designed for the Induction Heating applications.

More information

CURRENT-MODE PWM CONTROLLERS FEATURES ORDERING INFORMATION BLOCK DIAGRAM

CURRENT-MODE PWM CONTROLLERS FEATURES ORDERING INFORMATION BLOCK DIAGRAM CURRENT-MODE PWM CONTROLLERS The KA3842B/3B/4B/5B are fixed frequency current-mode PWM controller. They are specially designed for Off - Line and DC-to-DC converter applications with minimal external components.

More information

FJE3303 High Voltage Fast-Switching NPN Power Transistor

FJE3303 High Voltage Fast-Switching NPN Power Transistor FJE3303 High oltage Fast-Switching NPN Power Transistor High oltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Regulator TO-26. Emitter 2.Collector 3.Base Absolute Maximum

More information

FJAF6810. h FE2 V CE =5V, I C =6A. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case 2.08 C/W

FJAF6810. h FE2 V CE =5V, I C =6A. Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case 2.08 C/W FJAF68 FJAF68 High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V High Switching Speed : (typ.) =.µs For Color Monitor TO-3PF.Base 2.Collector 3.Emitter

More information

Features R DS(ON) = V GS = 4.5 V. TA=25 o C unless otherwise noted

Features R DS(ON) = V GS = 4.5 V. TA=25 o C unless otherwise noted FDN68P 6V P-Channel Logic Level PowerTrench MOSFET October FDN68P General Description This 6V P-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management

More information

ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)

ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated) FLLD261 HIGH CONDUCTANCE LOW LEAKAGE DIODE PD....50 mw @ TA = 25 Deg C BV....200 V (MIN) @ IR = 5 ua ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature -55

More information

Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM741 Single Operational Amplifier Features Short Circuit Protection Excellent

More information

FJPF13009 NPN Silicon Transistor

FJPF13009 NPN Silicon Transistor FJPF3009 NPN Silicon Transistor High oltage Switch Mode Application High oltage Capability High Switching Speed Suitable for Motor Control and Switching Mode Power Supply December 2007 FJPF3009 NPN Silicon

More information

Features. SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units

Features. SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units P-Channel.5V Specified PowerTrench MOSFET February General Description This P-Channel.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been

More information

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TA = 25 C unless otherwise noted. Symbol Parameter Value Units Discrete POWER & Signal Technologies C B E TO-92 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 ma. Sourced from Process 21. See PN2369A

More information

FJA4310. Symbol Parameter Value Units

FJA4310. Symbol Parameter Value Units FJA43 FJA43 Audio Power Amplifier High Current Capability : =A High Power Dissipation Wide S.O.A Complement to FJA42 TO-3P.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

More information

Features. TO-3P FQA Series

Features. TO-3P FQA Series FQA24N60 FQA24N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

Features. TO-3P FQA Series

Features. TO-3P FQA Series FQA11N90 FQA11N90 900V N-Channel MOSFET September 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

onlinecomponents.com

onlinecomponents.com FQPF7N60 FQPF7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

Features. TO-220 FQP Series

Features. TO-220 FQP Series FQP70N10 FQP70N10 100V N-Channel MOSFET August 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

BC547 BC547A BC547B BC547C

BC547 BC547A BC547B BC547C BC547 BC547A BC547B BC547C BC547 / BC547A / BC547B / BC547C E B C TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents

More information

Features G D. TO-220 FQP Series

Features G D. TO-220 FQP Series FQP7N60 FQP7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS

More information

Features. (Note 1b) 1.2. (Note 1c) 1.0. (Note 1c) 125

Features. (Note 1b) 1.2. (Note 1c) 1.0. (Note 1c) 125 NDS97 V P-Channel PowerTrench MOSFET May NDS97 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power

More information

Features. TO-220F FQPF Series

Features. TO-220F FQPF Series 250V P-Channel MOSFET April 2000 QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

More information

Absolute Maximum Ratings T a = 25 C unless otherwise noted Symbol Parameter Value Unit

Absolute Maximum Ratings T a = 25 C unless otherwise noted Symbol Parameter Value Unit MMBT2222AT NPN Epitaxial Silicon Transistor Features General purpose amplifier transistor. Ultra-Small Surface Mount Package for all types. General purpose switching & amplification application September

More information

SOT-23 Mark: 6U / 6T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

SOT-23 Mark: 6U / 6T. TA = 25 C unless otherwise noted. Symbol Parameter Value Units G S D J J TO-92 MMBFJ MMBFJ G SOT-23 Mark: 6U / 6T D S NOTE: Source & Drain are interchangeable This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier,

More information

Features. TO-220F FQPF Series

Features. TO-220F FQPF Series FQPF6N60 FQPF6N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

Features. Symbol Description SGH23N60UFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

Features. Symbol Description SGH23N60UFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T SGH23N6UFD Ultra-Fast IGBT September 2 IGBT SGH23N6UFD General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed

More information

RoHS Compliant Product

RoHS Compliant Product RoHS Compliant Product Description The SMSNE555 is a highly stable timer IC that can be operated in astable mode and monostable mode. For monostable mode: time delay is controlled by one external and one

More information

Features. I-PAK FQU Series

Features. I-PAK FQU Series 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced

More information

Features. TO-220 FQP Series

Features. TO-220 FQP Series FQP4N80 FQP4N80 800V N-Channel MOSFET September 000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,

More information

SOT-23 Mark: 62V / 62W / 62X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

SOT-23 Mark: 62V / 62W / 62X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units G S D J210 J211 J212 TO-92 This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process

More information

Features. I-PAK FQU Series

Features. I-PAK FQU Series 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 10 Power Dissipation for Single Operation (Note 1a) 2

Features. TA=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 10 Power Dissipation for Single Operation (Note 1a) 2 V N-Channel PowerTrench MOSFET General Description These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted 3V P-Channel PowerTrench MOSFET October 2 General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power management

More information

Features. I 2 -PAK FQI Series

Features. I 2 -PAK FQI Series 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

FJN965 FJN965. NPN Epitaxial Silicon Transistor

FJN965 FJN965. NPN Epitaxial Silicon Transistor For Output Amplifier of Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute

More information

DIMMING BALLAST CONTROL IC

DIMMING BALLAST CONTROL IC KA75/D BALLAST CONTROL IC The KA75 is a electronic ballast controller for fluorescent inverter systems. It contains whole function in KA751, current feed back and preheating time controlled by temperature

More information

Features S 1. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 6 Power Dissipation for Single Operation (Note 1a) 0.

Features S 1. T A=25 o C unless otherwise noted. Symbol Parameter Ratings Units. Pulsed 6 Power Dissipation for Single Operation (Note 1a) 0. V N-Channel PowerTrench MOSFET October General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional

More information

Features G D. TO-220 FQP Series

Features G D. TO-220 FQP Series 100V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

More information

KSA539 KSA539. PNP Epitaxial Silicon Transistor

KSA539 KSA539. PNP Epitaxial Silicon Transistor Low Frequency Amplifier Complement to KSC815 Collector-Base Voltage: V CBO = -60V Collector Power Dissipation: P C = 400mW Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1.

More information

FFPF60B150DS. 120 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +150 C

FFPF60B150DS. 120 A 60Hz Single Half-Sine Wave T J, T STG Operating Junction and Storage Temperature - 65 to +150 C FFPF6B5DS FFPF6B5DS Features High voltage and high reliability High speed switching Modulation diode / Damper diode Low conduction loss Modulation diode / Damper diode TO-22F Applications (Modulation +

More information

QFET TM FQP13N06. Features G D. TO-220 FQP Series

QFET TM FQP13N06. Features G D. TO-220 FQP Series 60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This

More information

KSP13/14. V CE =5V, I C =10mA

KSP13/14. V CE =5V, I C =10mA KSP3/4 KSP3/4 Darlington Transistor Collector-Emitter Voltage: V CES =30V Collector Power Dissipation: P C (max)=625mw TO-92. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute

More information

TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor

TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor TIP0/TIP/TIP NPN Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP5/6/7 High DC Current Gain : h FE =0 @ CE =4, I C =A(Min.)

More information

Features G D. TO-220 FQP Series

Features G D. TO-220 FQP Series FQP34N20L FQP34N20L 200V LOGIC N-Channel MOSFET June 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar

More information

2N5551- MMBT5551 NPN General Purpose Amplifier

2N5551- MMBT5551 NPN General Purpose Amplifier 2N5551- MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551

More information

QFET TM FQP20N06. Features G D. TO-220 FQP Series

QFET TM FQP20N06. Features G D. TO-220 FQP Series 60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This

More information

Characteristic Value Units

Characteristic Value Units dvanced Power MOSFET IRF630 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : 10 µ (Max.)

More information

NDS0605 P-Channel Enhancement Mode Field Effect Transistor

NDS0605 P-Channel Enhancement Mode Field Effect Transistor NDS65 P-Channel Enhancement Mode Field Effect Transistor July NDS65 General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary, high cell density,

More information

QFET TM FQL40N50. Features. TO-264 FQL Series

QFET TM FQL40N50. Features. TO-264 FQL Series 500V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This

More information

KSA1013 KSA1013 PNP EPITAXIAL SILICON TRANSISTOR. Color TV Audio Output Color TV Vertical Deflection Output

KSA1013 KSA1013 PNP EPITAXIAL SILICON TRANSISTOR. Color TV Audio Output Color TV Vertical Deflection Output KSA03 KSA03 Color TV Audio Output Color TV Vertical Deflection Output TO-92L. Emitter 2. Collector 3. Base PNP EPITAXIAL SILICON TRANSISTOR Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol

More information

TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor

TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor Medium Power Linear Switching Applications Complementary to TIP120/121/122 Absolute Maximum Ratings* T a = 25 C unless otherwise noted October 2008

More information

Features S 1. TA=25 o C unless otherwise noted

Features S 1. TA=25 o C unless otherwise noted P-Channel.5V PowerTrench Specified MOSFET January General Description This P-Channel.5V specified MOSFET uses a rugged gate version of Fairchild s advanced PowerTrench process. It has been optimized for

More information

Features SLEW VDD. TA=25 o C unless otherwise noted

Features SLEW VDD. TA=25 o C unless otherwise noted FDG90D Slew Rate Control Driver IC for P-Channel MOSFETs April 2002 FDG90D General Description The FDG90D is specifically designed to control the turn on of a P-Channel MOSFET in order to limit the inrush

More information

QFET TM FQP13N06L. Features G D. TO-220 FQP Series

QFET TM FQP13N06L. Features G D. TO-220 FQP Series 60V LOGIC N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

More information

KSB564A KSB564A. PNP Epitaxial Silicon Transistor

KSB564A KSB564A. PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier Complement to KSD47A Collector Current : I C = -A Collector Power Dissipation : P C = 800mW Suffix -C means Center Collector (. Emitter 2. Collector 3. Base) TO-92. Emitter

More information

TO Emitter 2. Collector 3. Base

TO Emitter 2. Collector 3. Base KSD66/66A Audio Frequency Power Amplifier & Medium Speed Switching Complement to KSB6/6A TO-92. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a =25 C unless otherwise noted November 2007 Symbol

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted Dual N-Channel.V Specified PowerTrench MOSFET July 3 General Description These N-Channel.V specified MOSFETs use Fairchild Semiconductor s advanced PowerTrench process. It has been optimized for power

More information

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted

N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted September BSS38 BSS38 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild s proprietary,

More information

Features. TO-3P IRFP Series

Features. TO-3P IRFP Series 500V N-Channel MOSFET November 2001 General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced

More information

Characteristic Value Units

Characteristic Value Units dvanced Power MOSFET SFP9630 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : -10 µ (Max.)

More information

QFET TM FQT4N20L. Features. SOT-223 FQT Series

QFET TM FQT4N20L. Features. SOT-223 FQT Series 200V LOGIC N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

More information

Distributed by: www.jameco.com -8-8-4242 The content and copyrights of the attached material are the property of its owner. Connection Diagram 448 448SE SOT-2 2 5H MARKING MMBD448 5H MMBD448CA MMBD448CC

More information

Features. TO-220F SSS Series

Features. TO-220F SSS Series 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has

More information

Features. TA=25 o C unless otherwise noted. (Note 1b) 0.9. (Note 1c) 0.7

Features. TA=25 o C unless otherwise noted. (Note 1b) 0.9. (Note 1c) 0.7 April V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage

More information

Features. TO-3PN IRFP Series

Features. TO-3PN IRFP Series 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information

QFET TM FQA65N20. Features. TO-3P FQA Series

QFET TM FQA65N20. Features. TO-3P FQA Series 200V N-Channel MOSFET August 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

More information

QFET TM FQP85N06. Features G D. TO-220 FQP Series

QFET TM FQP85N06. Features G D. TO-220 FQP Series 60V N-Channel MOSFET May 2001 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This

More information

Features. TO-220F IRFS Series

Features. TO-220F IRFS Series 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has

More information

Characteristic Value Units

Characteristic Value Units dvanced Power MOSFET SSW/IN60 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : 25 µ (Max.)

More information

KSC2881 NPN Epitaxial Silicon Transistor

KSC2881 NPN Epitaxial Silicon Transistor KSC288 NPN Epitaxial Silicon Transistor Power Amplifier Collector-Emitter Voltage : O =20V Current Gain Bandwidth Productor : f T =20MHz Collector Dissipation : P C =~2W in Mounted on Ceramic Board Complement

More information

SOT-23 SuperSOT TM -8 SO-8 SOT-223. = 25 C unless otherwise noted. Symbol Parameter N-Channel P-Channel Units V DSS

SOT-23 SuperSOT TM -8 SO-8 SOT-223. = 25 C unless otherwise noted. Symbol Parameter N-Channel P-Channel Units V DSS July 998 FS898A ual N & P-Channel Enhancement Mode Field Effect Transistor General escription Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's

More information

Features. TA=25 o C unless otherwise noted

Features. TA=25 o C unless otherwise noted FDS667A Single N-Channel, Logic Level, PowerTrench MOSFET June 23 FDS667A General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process

More information

Features. 175 C maximum junction temperature rating. T A =25 o C unless otherwise noted

Features. 175 C maximum junction temperature rating. T A =25 o C unless otherwise noted FDB62P 2V P-Channel.8V Specified PowerTrench MOSFET January 24 FDB62P General Description This P-Channel power MOSFET uses Fairchild s low voltage PowerTrench process. It has been optimized for power management

More information

L M 5 5 5/N E 5 5 5/S A 5 5 5

L M 5 5 5/N E 5 5 5/S A 5 5 5 L M 5 5 5/N E 5 5 5/S A 5 5 5 S i n g l e T i m e r www.fairchildsemi.com Features High Current Drive Capability (00mA) Adjustable Duty Cycle Temperature Stability of 0.005%/ C Timing From µsec to Hours

More information

FDG6303N Dual N-Channel, Digital FET

FDG6303N Dual N-Channel, Digital FET September FG6N ual N-Channel, igital FET General escription Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,

More information

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TA = 25 C unless otherwise noted. Symbol Parameter Value Units Discrete POWER & Signal Technologies C B E TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 ma. Sourced

More information

KSC1845. h FE2 V CE =6V, I C =1mA. Classification P F E U h FE2 200 ~ ~ ~ ~ 1200

KSC1845. h FE2 V CE =6V, I C =1mA. Classification P F E U h FE2 200 ~ ~ ~ ~ 1200 KSC845 KSC845 Audio Frequency Low Noise Amplifier Complement to KSA992 TO-92. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a =25 C unless otherwise noted Symbol

More information

Features. Symbol Parameter Q2 Q1 Units

Features. Symbol Parameter Q2 Q1 Units Dual N-Channel, Notebook Power Supply MOSFET General Description Features This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral

More information

FQA11N90C FQA11N90C. 900V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics.

FQA11N90C FQA11N90C. 900V N-Channel MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted. Thermal Characteristics. 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology

More information