Low Energy Nanolayer Sensors. Thermal reactivation
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1 Low Energy Nanolayer Sensors W. Moritz 1, M. Milstrey 2 1 Humboldt University of Berlin, Brook-Taylor-Str.2, Berlin, Germany; werner.moritz@rz.hu-berlin.de 2 Swissbit Germany AG Sensor structure Hydrogen response Thermal reactivation Mechanistic investigations Fire detection LOE Explosion alarm 1
2 Disadvantages of available hydrogen sensors: energy consumption too high for battery powered systems due to elevated working temperature price to high for mass products poor selectivity 2
3 Sensor structure Palladium Si 3 N 4 SiO 2 Si Similar to an oxygen sensor described earlier 3
4 Si LaF 3 Electrochemical mechanism ((different to Lundström type)) Palladium CV-measurement 4
5 Response of the Pd/LaF 3 /Si 3 N 4 /SiO 2 /Si field effect structure (solid line and left scale) to different concentrations of hydrogen (doted line and right scale) in synthetic air; room temperature; measurement 1 hour after preparation of the Pd layer 5
6 6 days after preparation Gate voltage shift (mv) Time (s) Hydrogen concentration (ppm) Similar to oxygen sensor 6
7 Heating and temperature measurement No method for fast surface temperature measurement 1 - Pt; 2 - LaF 3 ; 3 - SiO 2 /Si 3 N 4 ; 4 - n-si; 5 - ohmic contact 7
8 Power pulse source Triggersignal Control voltage -5V Surface temperature measurement Computer TTL Low voltage impulse High voltage 2-15V IEEE 488 Control voltage RS232 Transformed hig voltage impulse Gas 1 Differential probes R = 1Ω I Sample holder Optics TTL Gas exhaust Relais photo current measurement + voltage out Gas 2 Sensitivity measurement IR-LED R Mess signal in sin out 8
9 Calculations of temperature distribution 1 s 1 W 1Ws LaF 3 24 nm SiO 2 /Si 3 N 4 8nm 1 µs 1W 1mWs 1ns 1W 1µWS 9
10 Surface heating current/a voltage/v resitance/ohm temperature/k 5 1 time/µs time/µs 3 1
11 Constant surface temperature ns T<5K temperatur/k t/ns power/w time/ns Parameters of the electrical heating pulse used in Fig. above Max. current 8,4A Cur. dens. 2,8*1 7 Acm -2 Max. voltage 293 V Max. power 2365 W Total energy 1,82*1-3 J T Si =,25 K ((average 2x1-8 W)) 5 activations simulating 2 years 11
12 Hydrogen signal in air after thermal reactivation Low concentration range Gate voltage shift (mv) room temperature 1 1 Hydrogen concentration (ppm) Activation similar to oxygen sensor Gate voltage shift (mv) mv/decade 1 Limit of detection 5 ppb Time (min) Hydrogen concentration (ppm)
13 A Fire Experiment in a Wooden House... T- Amamoto et al., Sensors and Actuators, B1 (199)
14 Early state of Fire (smoldering) TF 2 wood on electrical heater signal/mv TF 2 Start Heater hydrogensensor 9 sec earlier ventilation on t/s smoke-sensor CO-conc 3,5 6 3, 5 2,5 4 2, 3 1,5 2 1, 1,5, 14
15 High concentration range LOE Limit of explosion 4% Hydrogen in air Mass markets Fuell cells Hydrogen cars in garages 15
16 High concentration range Gate voltage shift (mv) mv/decade Time (s) Hydrogen concentration (%) gate voltage at the base line concentration of 1% was set to V 16
17 Mechanism Hydrogen measurements in argon 1,4 1,2 - air - argon - 1 ppm H 2 in argon Capacitance (nf) 1,,8,6,4 4 mv shift due to 1 ppm H 2, Gate voltage (mv) 17
18 Mechanism Oxygen sensor O 2 + A* O 2 (A*) (1) O 2 (A*) + H 2 O + e - HO 2 (A*) + OH - (2) OH - + (F*) OH - (F*) (3) Additional hydrogen action O 2 (A*) + H 2 H 2 O (A*) (4) 18
19 Conclusions - room temperature hydrogen sensor in ppm range and for high concentration - thermal reactivation is possible - Low energy consumption for heating impuls - early fire detection - alarm at lower explosion level - Battery power application for long time - Combination with energy harvesting technology possible 19
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LC 2 MOS 5 Ω RON SPST Switches ADG45/ADG452/ADG453 FEATURES Low on resistance (4 Ω) On resistance flatness (0.2 Ω) 44 V supply maximum ratings ±5 V analog signal range Fully specified at ±5 V, 2 V, ±5
FEATURE: Fast Response Time. High Analytic. Cut-Off Visible Wavelength λp=94nm High sensitivity. Lead Free product, in compliance with RoHS. AKE GKE D
PHOTO INTERRUPTER AKE GKE DATA SHEET REV. : 1. DATE : 2-JUN.-27 GKE GOODTAKE GKE GOODTA GOODTAKE INTERNATIONAL LTD. 1 (7) Rev 1.. 2-Jun-7 FEATURE: Fast Response Time. High Analytic. Cut-Off Visible Wavelength
III-Nitride microwave switches Grigory Simin
Microwave Microelectronics Laboratory Department of Electrical Engineering, USC Research Focus: - Wide Bandgap Microwave Power Devices and Integrated Circuits - Physics, Simulation, Design and Characterization
Low Power, mw, 2.3 V to 5.5 V, Programmable Waveform Generator AD9833-EP
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Schedule of Accreditation issued by United Kingdom Accreditation Service 2 Pine Trees, Chertsey Lane, Staines-upon-Thames, TW18 3HR, UK
2 Pine Trees, Chertsey Lane, Staines-upon-Thames, TW18 3HR, UK PRESSURE Hydraulic Pressure (Gauge) Hewett Road Gapton Hall Industrial Estate Great Yarmouth Norfolk NR31 0NN Contact: Mr J Gunn Tel: +44
TS834 MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE LOW OR HIGH INTEGRATED TIMER
MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE LOW OR HIGH INTEGRATED TIMER ULTRA LOW POWER CONSUMPTION : 12µA max. @ V CC = 5V BOTH ACTIVE HIGH AND ACTIVE LOW OUTPUTS RESET TIMER WITH DISABLE FUNCTION PRECISION
Features. n-channel TO-220AB. 1
PD-95640 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
33 A I CM. 114 Gate-to-Emitter Voltage. mj P T C =25 Maximum Power Dissipation. Operating Junction and -55 to T STG
INSULATED GATE BIPOLAR TRANSISTOR Features Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 IGBT design provides tighter parameter distribution and
TPH3202PS TPH3202PS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) TO-220 Package. Absolute Maximum Ratings (T C =25 C unless otherwise stated)
PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI GSD pin layout improves high speed design RoHS
ISO. CT1698 MIL-STD-1397 Type E 10MHz Low Level Serial Interface. Features
CT1698 MIL-STD-1397 Type E 10MHz Low Level Serial Interface Features Optional transformer isolation Internally set threshold Matched to 50 ohm system impedance power on and off Operates with ±5 volt supplies
TRACEABLE MEASUREMENT CAPABILITY
PAGE 1 OF 8 DC Voltage Only 0 mv to 200 mv 20 V to 200 V 200 V to 1000 V 1 kv to 30 kv 15 ppm + 3 µv 6 ppm + 2 µv 5 ppm + 3 µv 7 ppm + 50 µv 13 ppm + 250 µv 0.5 % Only 0 mv to 200 mv 20 V to 200 V 200