Linear Building Block Low-Power Comparator with Op Amp and

Transcription

1 EVALUATION KIT AVAILABLE Linear Building Block Low-Power FEATURES Combines Low-Power,, and in a Single Package Optimized for Single-Supply Operation Small Package... 8-Pin MSOP (Consumes Only Half the Area of an 8-Pin SOIC), 8-Pin SOIC, and 8-Pin PDIP Ultra Low Input Bias Current... Less than 1 pa Low Quiescent Current... 1µA, (Typ.) Rail-to-Rail Inputs and Outputs Operates Down to = 1.8V, Min APPLICATIONS Power Management Circuits Battery Operated Equipment Consumer Products GENERAL DESCRIPTION The is a mixed-function device combining a general-purpose op amp, comparator, and voltage reference in a single 8-Pin package. This increased integration allows the user to replace two or three packages, which saves space, lowers supply current, and increases system performance. Both the op amp and comparator have rail-to-rail inputs and outputs which allows operation from low supply voltages with large input and output swings. The is optimized for low voltage ( = 1.8V), low supply current (1µA typ) operation. Packaged in a space-saving 8-Pin MSOP, the consumes half the board area of an 8-Pin SOIC and is ideal for applications requiring high integration, small size, and low power. It also is available in 8-Pin SOIC and 8-Pin PDIP packages. FUNCTIONAL BLOCK DIAGRAM ORDERING INFORMATION AMPOUT AMPIN 1 AMP CMP 8 CMPOUT Part No. Package Temp. Range CEPA 8-Pin PDIP (Narrow) C to 8 C CEUA 8-Pin MSOP C to 8 C CEOA 8-Pin SOIC (Narrow) C to 8 C TC1EV Evaluation Kit for Linear Building Block Family AMPIN REF (CMPIN) V SS Voltage Reference CMPIN PIN CONFIGURATIONS (MSOP, PDIP, and SOIC) AMPOUT 1 8 AMPIN CMPOUT AMPIN V SS _EPA _EUA _EOA REF (CMPIN) CMPIN - 1//1

2 ABSOLUTE MAXIMUM RATINGS* Supply Voltage...V Package Power Dissipation: 8-Pin PDIP (Narrow)... mw 8-Pin SOIC... mw 8-Pin MSOP (Narrow)... mw Voltage on Any Pin: (With Respect to Supplies)... (V SS.V) to (.V) Operating Temperature Range:... C to 8 C Storage Temperature Range... C to 1 C Lead Temperature (Soldering, 1 sec)... C * Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: T A = to 8 C,and = 1.8V to.v, unless otherwise specified. Typical values apply at C and =.V. Symbol Parameter Test Conditions Min Typ Max Unit Supply Voltage 1.8. V I Q Supply Current All outputs unloaded 1 18 µa A VOL Large Signal Voltage Gain R L = 1 KΩ, = V 1 V/mV V ICMR Common Mode Input Voltage Range V SS.. V V OS Input Offset Voltage = V, V CM = 1.V, T A = C, ±1 ± µv T A = C to 8 C ±. ±1. mv I B Input Bias Current T A = C, V CM = to V SS 1 1 pa V OS (DRIFT) Average Input Offset Voltage Drift = V, V CM = 1.V µv/ C GBWP Gain-Bandwidth Product = 1.8V to.v; V O = to V SS 9 KHz SR Slew Rate C L = 1pF R L = 1MΩ to GND Gain = 1 V IN = V SS to mv/µsec V OUT Output Signal Swing R L = 1 KΩ V SS V.. CMRR Common Mode Rejection Ratio T A = C, = V db V CM = to V SS PSRR Power Supply Rejection Ratio T A = C,V CM = V SS 8 db = 1.8 to V I SRC Output Source Current V IN =, V IN = V SS ma Output Shorted to V SS = 1.8V, Gain = 1 I SINK Output Sink Current V IN = V SS, V IN =, Output Shorted to ma = 1.8V, Gain = 1 e n Input Noise Voltage.1 Hz to 1 Hz 1 µvpp Input Noise Density 1KHz 1 nv/ Hz - 1//1

3 ELECTRICAL CHARACTERISTICS: (Cont.) T A = to 8 C,and = 1.8V to.v, unless otherwise specified. Typical values apply at C and =.V. Symbol Parameter Test Conditions Min Typ Max Unit V IR Input Voltage Range V SS.. V V OS Input Offset Voltage = V, T A = C mv T A = C to 8 C I B Input Bias Current T A = C, IN = to V SS ±1 pa V OH Output High Voltage R L = 1KΩ to V SS. V V OL Output Low Voltage R L = 1KΩ to. V PSRR Power Supply Rejection Ratio T A = C db = 1.8V to V I SRC Output Source Current IN = 1 ma Output Shorted to V SS = 1.8V I SINK Output Sink Current IN = V SS ma Output Shorted to = 1.8V t PD1 Response Time 1mV Overdrive,C L = 1pF µsec t PD Response Time 1mV Overdrive,C L = 1pF µsec V REF Reference Voltage V I REF(SOURCE) Source Current µa I REF(SINK) Sink Current µa C L(REF) Load Capacitance 1 pf N VREF Voltage Noise 1 Hz to 1 KHz µvrms Noise Density 1 KHz 1. µv/ Hz - 1//1

4 DETAILED DESCRIPTION The is one of a series of very low-power, linear building block products targeted at low-voltage, singlesupply applications. The minimum operating voltage is 1.8V, and typical supply current is only 1µA. It combines a comparator, an op amp, and a voltage reference in a single package. The contains one comparator. The comparator s input range extends beyond both supply voltages by mv and the outputs will swing to within several millivolts of the supplies depending on the load current being driven. The inverting input is internally connected to the output of the reference. The comparator exhibits propagation delay and supply current which are largely independent of supply voltage. The low input bias current and offset voltage make it suitable for high impedance precision applications. Operational Amplifier The contains one rail-to-rail op amp. The amplifier s input range extends beyond both supplies by mv and the outputs will swing to within several millivolts of the supplies depending on the load current being driven. The amplifier design is such that large signal gain, slew rate and bandwidth are largely independent of supply voltage. The low input bias current and offset voltage of the make it suitable for precision applications. A. percent tolerance, internally biased, 1.V bandgap voltage reference is included in the. It has a pushpull output capable of sourcing and sinking at least µa. TYPICAL APPLICATIONS The lends itself to a wide variety of applications, particularly in battery-powered systems. It typically finds application in power management, processor supervisory, and interface circuitry. 1. Choose the feedback resistor R C. Since the input bias current of the comparator is at most 1 pa, the current through R C can be set to 1 na (i.e. 1 times the input bias current) and retain excellent accuracy. The current through R C at the comparator s trip point is V R / R C where V R is a stable reference voltage.. Determine the hysteresis voltage (V HY ) between the upper and lower thresholds.. Calculate R A as follows. R A = R C ( V HY ). Choose the rising threshold voltage for V SRC (V THR ).. Calculate R B as follows: 1 R B = 1 1 ] [ ( V THR (V R * R A )) RA R C. Verify the threshold voltages with these formulas: V SRC rising: V THR = (V R ) (R A ) [( R A ) ( R B ) ( R C ) ] V SRC falling: Equation 1. Equation. Equation. V THF = V THR [ (R A * ) R C ] Equation. External Hysteresis () Hysteresis can be set externally with three resistors using positive feedback techniques (see Figure 1). The design procedure for setting external comparator hysteresis is as follows: - 1//1

5 Precision Battery Monitor Figure is a precision battery low/battery dead monitoring circuit. Typically, the battery low output warns the user that a battery dead condition is imminent. Battery dead typically initiates a forced shutdown to prevent operation at low internal supply voltages (which can cause unstable system operation). The circuit of Figure uses two devices and only six external resistors. AMP 1 is a simple buffer while CMPTR1 and CMPTR provide precision voltage detection using V R as a reference. Resistors R and R set the detection threshold for BATT LOW while resistors R1 and R set the detection threshold for BATT FAIL. The component values shown assert BATT LOW at.v (typical) and BATT FAIL at.v (typical). Total current consumed by this circuit is typically 8 µa at V. Resistors R and R provide hysteresis for comparators CMPTR1 and CMPTR, respectively. Voice Band Receive Filter The majority of spectral energy for human voices is in a. KHz frequency band from Hz to KHz. To properly recover a voice signal in applications such as radios, cellular phones, and voice pagers, a low-power bandpass filter that is matched to the human voice spectrum can be implemented using Microchip s CMOS op amps. Figure shows a unity-gain multi-pole Butterworth filter with ripple less than.1 db in the human voice band. The lower db cut-off frequency is Hz (single-order response), while the upper cut-off frequency is. KHz (fourth-order response). EVALUATION KIT The TC1EV consists of a four-inch by six-inch prewired application circuit board. Pre-configured circuits include a pulse width modulator, wake-up timer, function generator, and others. On-board current meter terminals, voltage regulator, and a user-prototyping area speed circuit development. Please contact your local Microchip Technologies representative for more information. V SRC R A R B V R R C Figure 1. External Hysteresis V OUT Supervisory Audio Tone (SAT) Filter for Cellular Supervisory Audio Tones (SAT) provide a reliable transmission path between cellular subscriber units and base stations. The SAT tone functions much like the current/ voltage used in land line telephone systems to indicate that a phone is off the hook. The SAT tone may be one of three frequencies: 9,, or Hz. A loss of SAT implies that channel conditions are impaired, and if SAT is interrupted for more than seconds, a cellular call is terminated. Figure shows a high Q () first order SAT detection bandpass filter using TelCom s CMOS op amp architecture. This circuit nulls all frequencies except the three SAT tones of interest. - 1//1

6 TO SYSTEM DC/DC CONVERTER R, k, 1% R,.M AMP1 R, k, 1% VDD CMPTR1 BATTLOW V ALKALINE R1, k, 1% V R CMPTR BATTFAIL R,.M R, k, 1% Figure. Precision Battery Monitor Gain = db Fch =. KHz db/octave Fcl = Hz db/octave Passband Ripple <.1 db.1 µf.k 8 pf /.K pf V OUT V IN 1.K 1.K 1.K pf pf Figure. Multi-Pole Butterworth Voice Band Receive Filter - 1//1

7 Gain = db Q = Q = F C BW ( db) F C = KHz. µf 8.K V IN.K. µf V OUT 11. Amp. / / Figure. Second Order SAT Bandpass Filter - 1//1

8 TYPICAL CHARACTERISTICS DELAY TO RISING EDGE (µsec) DELAY TO FALLING EDGE (µsec) Propagation Delay vs. Supply Voltage SUPPLY VOLTAGE (V) Propagation Delay vs. Temperature Overdrive = 1mV T A = C C L = 1pF Overdrive = 1mV Overdrive mv = V = V = V = V 8 TEMPERATURE ( C) VDD VOUT (V) REFERENCE VOLTAGE (V) DELAY TO FALLING EDGE (µsec) SUPPLY VOLTAGE (V) Propagation Delay vs. Supply Voltage Output Swing vs. Output Source Current. T A = C Output Short-Circuit Current vs. Supply Voltage 1. TA = C 1. TA = C OUTPUT SHORT -CIRCUIT CURRENT (ma) TA = 8 C TA = C Sinking 1 TA = C Sourcing T A = 8 C 1 SUPPLY VOLTAGE (V). T A = C C L = 1pF Overdrive = 1mV Overdrive = mv = 1.8V 1 Reference Voltage vs. Load Current = 1.8V = 1.8V Overdrive 1mV I SOURCE (ma) = V Sinking Sourcing = V =.V =.V = V = V LOAD CURRENT (ma) V OUT V SS (V) DELAY TO RISING EDGE (µsec) SUPPLY AND REFERENCE VOLTAGES (V) = V TEMPERATURE ( C) 8. 1 Propagation Delay vs. Temperature Overdrive = 1mV Line Transient Response of V REF V REF = V = V = V Output Swing vs. Output Sink Current T A = C = 1.8V 1 I SINK (ma) = V =.V 1 TIME (µsec) - 1//1 8

9 TYPICAL CHARACTERISTICS DC Open-Loop Gain (db) DC Open-Loop Gain vs. Temperature Supply Voltage (V) DC Open-Loop Gain (V/mV) DC Open-Loop Gain vs. Temperature C C 8 C Temperature ( C) Output Current (ma) Short-Circuit Current vs. Supply Voltage I SINK Supply Voltage (V) Output Current (ma) 1 1 Short-Circuit Current vs. Supply Voltage I SRC Supply Voltage (V) R LAOD (KΩ) Load Resistance vs. Load Capacitance 1% Overshoot = V, V CM = 1.V Region of Marginal Stability Region of Stable Operation Capacitive Load (pf) Output Voltage (mv) Input Voltage (mv) 1 1 Small-Signal Transient Response TIME µsec Output Voltage (V) Input Voltage (V) Large-Signal Transient Response PSRR (db) 1 Power Supply Rejection Ratio (PSRR) vs. Frequency = V, V CM = 1.V, V IN = 1mVpp TIME µsec 1 1K 1K Frequency (Hz) 1K 9-1//1

10 TYPICAL CHARACTERISTICS Reference Voltage vs. Supply Voltage 1. 1 Supply Current vs. Supply Voltage T A = 8 C REFERENCE VOLTAGE (V) SUPPLY VOLTAGE (V) SUPPLY CURRENT (µa) 1 1 T A = C T A = C 8 1 SUPPLY VOLTAGE (V) TAPING FORM Component Taping Orientation for 8-Pin MSOP Devices User Direction of Feed User Direction of Feed W Standard Reel Component Orientation for TR Suffix Device Reverse Reel Component Orientation for RT Suffix Device P Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 8-Pin MSOP 1 mm 8 mm 1 in - 1//1 1

11 TAPING FORM (CONT.) Component Taping Orientation for 8-Pin SOIC (Narrow) Devices User Direction of Feed User Direction of Feed W P Standard Reel Component Orientation for TR Suffix Device Standard Reel Component Orientation for RT Suffix Device Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 8-Pin SOIC (N) 1 mm 8 mm 1 in PACKAGE DIMENSIONS 8-Pin PDIP (Narrow). (.). (.1). (1.1). (.). (1.1).8 (8.8). (1.8). (1.).1 (.8).9 (.). (.8).1 (.).1 (.81).11 (.9). (1.). (.1).1 (.8).8 (.) MIN..11 (.9).9 (.9). (.).1 (.8). (1.1).1 (.8) Dimensions: inches (mm) 11-1//1

12 PACKAGE DIMENSIONS (CONT.) 8-Pin MSOP.1 (.1).11 (.9).19 (.).18 (.8). (.) TYP..1 (.1).11 (.9).1 (.).1 (.). (.1). (.). (1.1) MAX. MAX..8 (.).1 (.).8 (.). (.1) 8-Pin SOIC (Narrow).1 (.99).1 (.81). (.).8 (.9). (1.) TYP..19 (.).189 (.8). (.1).1 (.).1 (.). (.1).9 (1.). (1.) 8 MAX..1 (.). (.18). (1.).1 (.) Dimensions: inches (mm) - 1//1 1

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