TC57 Series. Linear Regulator Controller GENERAL DESCRIPTION FEATURES TYPICAL APPLICATIONS ORDERING INFORMATION PART CODE TC57 XX 02 ECT XX
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1 TC Series Linear Regulator Controller FEATURES Low Dropout Voltage: 1 ma with FZT9 PNP Transistor Output Voltage: V to V in.1v Increments.V to 8V Supply Range Low Operating Current:... µaoperating;. µa Shutdown Low-True Chip Enable Output Accuracy < ±% Small Package: -Pin SOT-A TYPICAL APPLICATIONS Battery Operated Systems Portable Instruments High-Efficiency Linear Regulator Post-Regulator for SMPS Power Supply or Battery Back-Up Supply for Memory TYPICAL APPLICATION V IN +.V C IN 1 µf OFF ON R BE K FZT9 Q1 EXT V IN R B 1K TCECT SHDN GND 1 V OUT C L 1 µf V OUT +V R L GENERAL DESCRIPTION The TC is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application at hand. This results in lower dropout operation (and often lower cost) compared with traditional linear regulators with on-board pass transistors. The maximum output current of a TC-based regulator circuit is limited only by the characteristics of the external pass transistor. For example, a maximum output current of ma (with a dropout voltage of 1 mv) results when an FZT9 pass transistor is used, while a Darlington configuration can deliver up to A. Flexibility, and superior performance make this family of regulator controllers the ideal choice in applications where low dropout voltage and low installed cost are key. ORDERING INFORMATION PART CODE TC XX ECT XX Output Voltage: Ex: =.V Tolerance: = ±% Temperature/Package: E: C to +8 C CT: -Pin SOT-A Taping Direction: TR: Standard Taping RT: Reverse Taping PIN CONFIGURATION *-Pin SOT-A.V Line Input,.V, ma Output LDO SHDN EXT TC 1 GND V IN V OUT Note: * -Pin SOT-A is equivalent to the EIAJ SC-A 1 Microchip Technology Inc. DS1A TC- 1//
2 TC Series ABSOLUTE MAXIMUM RATINGS* Voltage on V IN and EXT Pins... +1V Voltage on V OUT and SHDN Pins....V to (V IN +.V) EXT Pin Current... ma Operating Temperature Range (T C )... C to +8 C Storage Temperature (T STG )... C to +1 C Power Dissipation...1 mw *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS TCEP (NOTE ): (SHDN = GND, V IN = V OUT + 1V, V OUT = V to V, I OUT =, T A = C, Test Circuit of Figure 1, unless otherwise noted.) Symbol Parameter Test Conditions Min Typ Max Unit V IN Input Voltage 8 V V EXT Voltage on EXT Output 8 V V OUT Output Voltage I OUT = ma (Note 1).98 x V R V R ±.% 1. x V R V V OUT Load Regulation 1 ma I OUT 1 ma (Note ) mv V IN V OUT Dropout Voltage (Note ) I OUT = 1 ma 1 mv I DD Supply Current V SHDN = V IN = V 8 µa I SHDN Shutdown Supply Current V SHDN = GND. µa V OUT / V IN Line Regulation I OUT = ma, V V IN 8V (Note ).1. %/V V OUT / T V OUT Temp. Coefficient I OUT = 1 ma, C < T J < +8 C ±1 ppm/ C (Note ) I LEXT EXT Pin Leakage Current. µa I EXT EXT Sink Current (Note ) ma V IH SHDN Input High Logic Threshold 1. V V IL SHDN Input Low Logic Threshold. V I IH SHDN Input V IH V SHDN = V IN = V.1 µa I IL SHDN Input V IL V SHDN = GND.. µa NOTES: 1. V R is the regulator output voltage setting.. Dropout voltage is defined as the input to output differential at which the output voltage drops % below its nominal value measured at a 1V differential.. Varies with type of pass transistor used. Numbers shown are for the test circuit of Figure 1.. The product of I EXT x V EXT must be less than the maximum allowable power dissipation. TC- 1// 1 Microchip Technology Inc. DS1A
3 PIN DESCRIPTION Pin Number Name Description 1 GND Ground Terminal. V IN Supply Voltage Input. Positive input voltage of.v to 8.V. TC Series V OUT Regulator Voltage Sense Input. Connects to the collector of the external PNP pass transistor. EXT Base Drive for the external PNP pass transistor. SHDN Shutdown Input. The device is enabled when SHDN V IL. The device enters a low power shutdown state when SHDN V IH. During shutdown, the output is disabled, and supply current falls to less than 1 µa. V IN FZT9 Q1 V OUT C IN 1 µf R BE K EXT V IN R B 8Ω V OUT C L 1 µf R L OFF ON TCXXECT SHDN GND 1 Figure 1. Test Circuit 1 Microchip Technology Inc. DS1A TC- 1//
4 TC Series DETAILED DESCRIPTION The TC series of precision low dropout regulator controllers use an external PNP transistor to accommodate a wide range of output currents. A series resistor (R B ) limits the maximum base current drawn from the PNP transistor. Limiting the base drive both determines the regulator s output current capability, as well as limits ground current when the device is operated in dropout. The PNP transistor s V CE(SAT) is the only factor limiting dropout voltage. Transistor Selection The PNP pass transistor must have satisfactory power dissipation, current gain, and collector current specifications to suit the application at hand. The maximum output current the circuit can deliver is influenced by h FE. The highest guaranteed output current is given by: I LOAD(MAX) = ma x h FE(MIN) Equation 1. The transistor s actual power dissipation (PD) is equal to the maximum load current times the maximum input/output voltage differential, or: P D = I LOAD(MAX) x (V IN(MAX) V OUT(min) ) Equation. The ideal transistor has a minimum h FE of 1, and a V CE(SAT) of less than.v at full output current. For example, the Zetex FZT9 has an h FE of 1 at a collector current of 1A, and a guaranteed V CE(SAT) of.v at a base current of 1 ma. It is packaged in a SOT and is recommended for use with the TC. Other transistors are also suitable, depending on the required input and output voltages and output current (Table a). For example, assume a desired continuous output current of 1.A, an input voltage of V, and an FZT9 pass transistor. The FZT9 has a typical h FE of 1, and a V BE of.8v; both specified at a collector current of 1.A. Substituting these values into the equation above results in an R B value of Ω (closest standard value = 8Ω). Pull-Up Resistor and Output Capacitor (Figure ) A pull-up resistor (R BE, installed between the base and emitter of the pass transistor) facilitates rapid turn-off of the pass transistor in the event of a sudden decrease in load. Recommended values for this resistor are between KΩ and KΩ. A Tantalum output capacitor of at least 1 µf must be used to guarantee stability. Higher values decrease output noise and eliminate power-on overshoot, but extend power-up times. Table a lists several capacitor choices. Input Capacitor (Figure ) The addition of an input capacitor further reduces output noise, and negates the effects of power supply input impedance. A 1 µf(min) Tantalum capacitor is recommended. Shutdown Mode The TC enters a low power shutdown mode when the shutdown input (SHDN) is high. During shutdown, the regulator is disabled, the output capacitor is discharged through the load, and supply current to the TC decreases to less than 1µA. Normal operation resumes when SHDN is brought low. If the shutdown mode is not used, SHDN should be tied to V IN. V IN = V FZT9 Q1 V OUT =.V Base-Current Limiting Resistor (Figure ) Base current limiting resistor R B can be estimated using: R B = h FE(V IN V BE ) I OUT Equation. C IN 1 µf R BE KΩ V IN V OUT 1 GND EXT R B 8Ω TC C OUT 1 µf where: h FE is the current gain of the pass transistor V IN is the input voltage (in volts) V BE is the base-emitter voltage at the desired output current (in volts) I OUT is the output current (in Amps) OFF ON SHDN Figure..V, 1A Regulator Using V Supply Input TC- 1// 1 Microchip Technology Inc. DS1A
5 TC Series Table a. Component Suppliers Device Manufacturer Product Method CAPACITORS Series Matsuo Surface Mount F9 Tantalum Series Nichicon Surface Mount 9 Tantalum Series Sprague Surface Mount OS-CON Series Sanyo Through-Hole Low-ESR Organic Semiconductor LXF Series United Chemi-Con Through-Hole BIPOLAR TRANSISTORS ZTX9 Zetex Through-Hole T1P Motorola Through-Hole N Motorola Through-Hole N9A Motorola Through-Hole CMPT9A Central Semiconductor Surface Mount PZT9AT1 Motorola Surface Mount FZT9 Zetex Surface Mount Table b. Manufacturers Phone and Fax Numbers Manufacturer Country Telephone Fax Central Semiconductor USA (1) -111 (1) -18 Matsuo USA (1) (1) 9-9 Motorola USA () - () -1 Nichicon USA (8) 8- (8) 8-98 Japan Sanyo USA (19) 1-8 (19) 1-1 Japan Sprague USA () -191 () -1 United Chemi-Con USA (1) -9 (1) -9 Zetex USA (1) -1 (1) 8- UK MARKINGS -PIN SOT-A represents integer part of output voltage Symbol Voltage..... represents 1st decimal of output voltage Symbol Voltage Symbol Voltage represents production lot ID code 1 Microchip Technology Inc. DS1A TC- 1//
6 TC Series TYPICAL CHARACTERISTICS CURVES 1. vs. OUTPUT CURRENT.1 TC(V) T A = C V IN = V, C L =1µF.1 TC(V) T A = C V IN = V, C L =1µF. TC(.V) T A = C V IN =.V, C L =1µF vs. TC(V) TC(V) TC(V). C L =1µF,T A = C.1 C L =1µF,T A = C. C L =1µF,T A = C..8.. I OUT =1mA 1mA ma I OUT =1mA ma 1mA..8.. I OUT =1mA 1mA ma.... :V IN (V).8 :V IN (V) :V IN (V) TC(V) TC(.V) TC(.V).1 C L =1µF,T A = C. C L =1µF,T A = C. C L =1µF,T A = C I OUT =1mA 1mA, ma I OUT =1mA 1mA ma.... I OUT =1mA, 1mA ma TC- 1// 1 Microchip Technology Inc. DS1A
7 TC Series TYPICAL CHARACTERISTICS CURVES (CONT.). DROPOUT VOLTAGE vs. OUTPUT CURRENT TC(V) TC(V) TC(.V) C L =1µF C L =1µF C L =1µF DROPOUT VOLTAGE:V IN -V OUT.8... T OPR = C 8 C DROPOUT VOLTAGE:V IN -V OUT.8... T OPR = C - C - C - C C DROPOUT VOLTAGE:V IN -V OUT.8... T OPR = C 8 C. SUPPLY CURRENT vs. TC(V) TC(V) TC(.V) 1 T OPR = C, 8 C - C 1 T OPR = C, 8 C T OPR = C, 8 C - C - C 1 8 :V IN (V) :V IN (V) :V IN (V). vs. AMBIENT TEMPERATURE.1 TC(V) V IN =.V I OUT = 1mA,C L =1µF.1 TC(V) V IN =.V I OUT = 1mA,C L =1µF. TC(.V) V IN =.V I OUT = 1mA,C L =1µF Microchip Technology Inc. DS1A TC- 1//
8 TC Series TYPICAL CHARACTERISTICS CURVES (CONT.). SUPPLY CURRENT vs. AMBIENT TEMPERATURE TC(V) TC(V) TC(.V) V IN =V V IN =V V IN =.V INPUT TRANSIENT RESPONSE TC(V) TC(V) 8 I OUT = 1mA, C L =1µF. 8 I OUT = 1mA, C L =1µF Time (. msec/div) Time (. msec/div) TC(V) TC(V) I OUT = 1mA, C L =1µF. I OUT = 1mA, C L =1µF Time (. msec/div) Time (. msec/div) TC- 1// 8 1 Microchip Technology Inc. DS1A
9 TC Series TYPICAL CHARACTERISTICS CURVES (CONT.). INPUT TRANSIENT RESPONSE (CONT.) TC(.V) TC(.V) I OUT = 1mA, C L =1µF..... I OUT = 1mA, C L =1µF Time (. msec/div) Time (. msec/div) 8. LOAD TRANSIENT RESPONSE TC(V) TC(V).1 V IN = V, C L =1µF 1.1 V IN = V, C L =1µF OUTPUTVOLTAGE OUTPUT CURRENT ma 1mA 8 OUTPUT CURRENT I OUT (ma) OUTPUT CURRENT ma 1mA 8 OUTPUT CURRENT I OUT (ma) Time (1 msec/div) Time (1 msec/div) TC(.V). V IN =.V, C L =1µF OUTPUTVOLTAGE OUTPUT CURRENT ma 1mA 8 OUTPUT CURRENT I OUT (ma) Time (1 msec/div) 1 Microchip Technology Inc. DS1A 9 TC- 1//
10 TC Series TAPING FORM Component Taping Orientation for -Pin SOT-A (EIAJ SC-A) Devices PIN 1 User Direction of Feed User Direction of Feed Device Marking Device Marking W PIN 1 Standard Reel Component Orientation TR Suffix Device (Mark Right Side Up) P Reverse Reel Component Orientation RT Suffix Device (Mark Upside Down) Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size -Pin SOT-A 8 mm mm in PACKAGE DIMENSIONS -Pin SOT-A (EIAJ SC-A). (1.9) REF..1 (.1).98 (.).1 (1.8).9 (1.). (.).1 (.) PIN 1. (.9) REF..1 (.1).1 (.). (1.). (.9). (.1). (.) 1 MAX..1 (.). (.9). (.). (.1) Dimensions: inches (mm) TC- 1// 1 1 Microchip Technology Inc. DS1A
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